In this study, we report on an investigation using atomic force microscope (AFM) to study lattice-matched InGaAs surface layers grown by MOVPE with two different sources of group V elements: trimethylarsenic (TMAs) and arsine. The growth was performed with a home made apparatus with a T shaped reactor. The substrate temperature ranged from 570 to 630°C under pure hydrogen or a mixture of hydrogen and nitrogen as carrier gas. After thermal annealing under PH 3 and growth of InP buffer layer, we could clearly observe the step/terrace like feature of the vicinal surface morphology for 0.2° misoriented substrates. For epilayers grown under nitrogen flow, step bunching was observed with terraces as large as 170 nm which is twice larger than the nominal value (80 nm). Lattice-matched InGaAs/InP epilayers were grown with arsine and TMAs. For TMAs-grown epilayers, we observed that the roughness depends on V/III ratio and growth temperature. The comparison of the surface morphology of TMAs and arsine-based epilayers assessed by AFM characterisation will be presented and discussed in terms of As-carbon adsorbed species.