Abstract
Lateral monolayer superlattices (LMSLs) of (InAs)1(GaAs)1 were successfully grown on (001) vicinal InP substrates by metal-organic chemical vapor deposition. The formation of a periodic structure in the lateral [110] direction was confirmed by x-ray diffraction. In an electronic measurement using (InAs)1(GaAs)1 LMSL–InP heterojunctions, an in-plane mobility anisotropy as well as a modified two-dimensional subband structure were observed. The latter is that at least two Shubnikov–de Haas fundamental frequencies are always observed even in the sample having a sufficiently low sheet electron density. Possible origins including a formation of a lateral periodic potential were discussed with respect to the results obtained.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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