Various materials with negative saturation magnetostriction were applied to a U-shaped unimorph device for vibration power generation using inverse magnetostrictive effect. When an fcc Fe-Ni alloy with the positive saturation magnetostriction was attached as an inverse magnetostrictive material on the front side of a U-shaped frame, larger values of the open-circuit voltage <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">op</sub> were obtained in comparison with that of the frame core device without a sample. However, when an fcc Ni metal with the negative saturation magnetostriction was attached on the front side of the U-shaped frame, its <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">op</sub> value was almost same as that of the frame core device. Larger <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">op</sub> values were obtained by attaching the fcc Ni metal on the back side of the U-shaped frame. Similar characteristics were observed in the devices using a bcc Fe metal and an hcp Co metal with negative saturation magnetostriction. Therefore, the back side setting is effective for the application of materials with negative saturation magnetostriction to the U-shaped unimorph device.