Vertically Aligned Multi-walled Carbon Nanotubes Research Articles

Selective growth of individual multiwalled carbon nanotubes

Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.

A Dual-RF-Plasma Approach for Controlling the Graphitic Order and Diameters of Vertically-Aligned Multiwall Carbon Nanotubes

ABSTRACTPlasma enhanced chemical vapor deposition (PECVD) is a unique technique for growing vertically-aligned multiwall carbon nanotubes (VA-MWNTs) at controllable tube densities. This technique is of considerable importance for low temperature growth of VA-MWNTs at desired locations. However, the graphitic order of these MWNTs is inferior to those grown by laser ablation, arc discharge, and thermal CVD techniques. Previously, these VA-MWNTs were grown by a one-plasma approach (DC, microwave etc), either for gas decomposition or substrate biasing. Here, we describe a dual-RF plasma enhanced CVD (dual-RF-PECVD) technique that offers unique capability for controlling the graphitic order and diameters of VA-MWNTs.

Vertically Aligned Carbon Nanotubes as the Sputter Resist in Space Propulsive Systems

ABSTRACTTwo-types of vertically aligned multi-walled carbon nanotubes (VA-MWNTs) are evaluated as the protective coatings against ion erosion in electric propulsion systems. A series of experiments have been conducted to understand the erosion rate and erosion mechanism of these VA-MWNTs. These experiments were carried out with Xe propellant at an ion current density of 5 mA/cm2. We found that the erosion rates of both types of VA-MWNTs were changing with time. Such a nonlinear erosion process is explained according to a possible erosion mechanism.