Vertical Nanowires Research Articles

Modeling selective narrowband light absorption in coaxial InAs-GaAs0.1Sb0.9 nanowires with partial shell segment coverage

Vertical III-V nanowire (NW) arrays are promising candidates for infrared (IR) photodetection applications. Generally, NWs with large diameters are required for efficient absorption in the IR range. However, increasing the NW diameter results in a loss of spectral selectivity and an enhancement in the photodetector dark current. Here, we propose a nanophotonic engineering approach to achieving spectrally-selective light absorption while minimizing the volume of the absorbing medium. Based on simulations performed using rigorous coupled-wave analysis (RCWA) techniques, we demonstrate dramatic tunability of the short-wavelength infrared (SWIR) light absorption properties of InAs NWs with base segments embedded in a reflective backside Au layer and with partial GaAs0.1Sb0.9 shell segment coverage. Use of a backside reflector results in the generation of a delocalized evanescent field around the NW core segment that can be selectively captured by the partially encapsulating GaAs0.1Sb0.9 shell layer. By adjusting the core and shell dimensions, unity absorption can be selectively achieved in the 2 to 3 μm wavelength range. Due to the transparency of the GaAs0.1Sb0.9 shell segments, wavelength-selective absorption occurs only along the InAs core segments where they are partially encapsulated. The design presented in this work paves the path toward spectrally-selective and polarization-dependent NW array-based photodetectors, in which carrier collection efficiencies can be enhanced by positioning active junctions at the predefined locations of the partial shell segments.

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide, our ferro-TFET is non-volatilely reconfigurable, enabling various modes of signal modulation. The ferro-TFET shows merits of reconfigurability, reduced footprint, and low supply voltage for signal modulation. This work provides the possibility for monolithic integration of both steep-slope TFETs and reconfigurable ferro-TFETs towards high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits.

Impact of Magnetite Nanowires on In Vitro Hippocampal Neural Networks.

Nanomaterials design, synthesis, and characterization are ever-expanding approaches toward developing biodevices or neural interfaces to treat neurological diseases. The ability of nanomaterials features to tune neuronal networks' morphology or functionality is still under study. In this work, we unveil how interfacing mammalian brain cultured neurons and iron oxide nanowires' (NWs) orientation affect neuronal and glial densities and network activity. Iron oxide NWs were synthesized by electrodeposition, fixing the diameter to 100 nm and the length to 1 µm. Scanning electron microscopy, Raman, and contact angle measurements were performed to characterize the NWs' morphology, chemical composition, and hydrophilicity. Hippocampal cultures were seeded on NWs devices, and after 14 days, the cell morphology was studied by immunocytochemistry and confocal microscopy. Live calcium imaging was performed to study neuronal activity. Using random nanowires (R-NWs), higher neuronal and glial cell densities were obtained compared with the control and vertical nanowires (V-NWs), while using V-NWs, more stellate glial cells were found. R-NWs produced a reduction in neuronal activity, while V-NWs increased the neuronal network activity, possibly due to a higher neuronal maturity and a lower number of GABAergic neurons, respectively. These results highlight the potential of NWs manipulations to design ad hoc regenerative interfaces.

Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps.

The incremental step pulse programming slope (ISPP) with random variation was investigated by measuring numerous three-dimensional (3D) NAND flash memory cells with a vertical nanowire channel. We stored multiple bits in a cell with the ISPP scheme and read each cell pulse by pulse. The excessive tunneling from the channel to the storage layer determines the program efficiency overshoot. Then, a broadening of the threshold voltage distribution was observed due to the abnormal program cells. To analyze the randomly varying abnormal program behavior itself, we distinguished between the read variation and over-programming in measurements. Using a 3D Monte-Carlo simulation, which is a probabilistic approach to solve randomness, we clarified the physical origins of over-programming that strongly influence the abnormal program cells in program step voltage, and randomly distributed the trap site in the nitride of a nanoscale 3D NAND string. These causes have concurrent effects, but we divided and analyzed them quantitatively. Our results reveal the origins of the variation and the overshoot in the ISPP, widening the threshold voltage distribution with traps randomly located at the nanoscale. The findings can enhance understanding of random over-programming and help mitigate the most problematic programming obstacles for multiple-bit techniques.

Effects of Interface Oxidation on Noise Properties and Performance in III-V Vertical Nanowire Memristors.

Memristors implemented as resistive random-access memories (RRAMs) owing to their low power consumption, scalability, and speed are promising candidates for in-memory computing and neuromorphic applications. Moreover, a vertical 3D implementation of RRAMs enables high-density crossbar arrays at a minimal footprint. Co-integrated III-V vertical gate-all-around MOSFET selectors in a one-transistor-one-resistor (1T1R) configuration have recently been demonstrated where an interlayer (IL)-oxide has been shown to enable high RRAM endurance needed for applications like machine learning. In this work, we evaluate the role of the IL-oxide directly on InAs vertical nanowires using low-frequency noise characterization. We show that the low-frequency noise or the 1/f-noise in InAs vertical RRAMs can be reduced by more than 3 orders of magnitude by engineering the InAs/high-k interface. We also report that the noise properties of the vertical 1T1R do not degrade significantly after RRAM integration making them attractive to be used in emerging electronic circuits.

Quantifiable Relationship Between Antibacterial Efficacy and Electro-Mechanical Intervention on Nanowire Arrays.

Physical disruption is an important antibacterial means as it is lethal to bacteria without spurring antimicrobial resistance. However, it is very challenging to establish a quantifiable relationship between antibacterial efficacy and physical interactions such as mechanical and electrical forces. Herein, titanium nitride (TN) nanowires with adjustable orientations and capacitances are prepared to exert gradient electro-mechanical forces on bacteria. While vertical nanowires show the strongest mechanical force resulting in an antibacterial efficiency of 0.62 log reduction (vs 0.22 for tiled and 0.36 for inclined nanowires, respectively), the addition of electrical charges maximizes the electro-mechanical interactions and elevates the antibacterial efficacy to more than 3 log reduction. Biophysical and biochemical analyses indicate that electrostatic attraction by electrical charge narrows the interface. The electro-mechanical intervention more easily stiffens and rips the bacteria membrane, disturbing the electron balance and generating intracellular oxidative stress. The antibacterial ability is maintained in vivo and bacteria-challenged rats are protected from serious infection. The physical bacteria-killing process demonstrated here can be controlled by adjusting the electro-mechanical interactions. Overall, these results revealed important principles for rationally designing high-performance antibacterial interfaces for clinical applications.

Vertical GeSn nanowire MOSFETs for CMOS beyond silicon

The continued downscaling of silicon CMOS technology presents challenges for achieving the required low power consumption. While high mobility channel materials hold promise for improved device performance at low power levels, a material system which enables both high mobility n-FETs and p-FETs, that is compatible with Si technology and can be readily integrated into existing fabrication lines is required. Here, we present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transconductance is increased to 850 µS/µm by exploiting the small band gap of GeSn as source yielding high injection velocities, the mobility in n-FETs is increased 2.5-fold compared to a Ge reference device, by using GeSn as channel material. The potential of the material system for a future beyond Si CMOS logic and quantum computing applications is demonstrated via a GeSn inverter and steep switching at cryogenic temperatures, respectively.

Design and Performance Analysis of a GAA Electrostatic Doped Negative Capacitance Vertical Nanowire Tunnel FET

Design and Performance Analysis of a GAA Electrostatic Doped Negative Capacitance Vertical Nanowire Tunnel FET

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications.

In this work, scalable fabrication of self-assembled GeSn vertical nanowires (NWs) based on rapid thermal annealing (RTA) and inductively coupled-plasma (ICP) dry etching was proposed. After thermal treatment of molecular-beam-epitaxy-grown GeSn, self-assembled Sn nanodots (NDs) were formed on surface and the spontaneous emission from GeSn direct band was enhanced by ∼5-fold. Employing the self-assembled Sn NDs as template, vertical GeSn NWs with a diameter of 25 ± 6nm and a density of 2.8 × 109cm-2 were obtained by Cl-based ICP dry etching technique. A prototype GeSn NW photodetector (PD) with rapid switching ability was demonstrated and the optoelectronic performance of Ge NW PD was systematically studied. The GeSn NW PD exhibited an ultralow dark current density of ∼33 nA/cm2 with a responsivity of 0.245 A/W and a high specific detectivity of 2.40 × 1012cmHz1/2W-1 at 1550nm under -1V at 77K. The results prove that this method is prospective for low-cost and scalable fabrication of GeSn NWs, which are promising for near infrared or short wavelength infrared nanophotonic devices.

Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications

A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-up approach on a highly n-doped silicon substrate. The electrical performance is studied as a function of various epi-structure parameters, including region lengths and doping levels, nanowire diameter, and the impact of the surface states. The results reveal that the optimized structure has a Normally-OFF mode with a threshold voltage higher than 0.8 V and exhibits minimized leakage current, low on-state resistance, and maximized breakdown voltage. To the best of our knowledge, this is the first exhaustive study of GaN-based nanowire transistors, providing valuable insights for the scientific community and contributing to a deeper understanding of the impact of GaN nanowire parameters on device performance.

Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

In this work, the impact of the channel doping density on the low-frequency noise of silicon Gate-All-Around (GAA) Vertical Nanowire (VNW) pMOSFETs on Silicon-on-Insulator (SOI) substrates will be described and discussed. It is demonstrated that the dominant fluctuation mechanism of the 1/f noise in the subthreshold regime changes from number (Δn) to mobility (Δμ) fluctuations with increasing p-type doping density of the silicon nanowires. At the same time, the lowest input-referred voltage noise Power Spectral Density is observed for an intermediate boron concentration in the nanowire of 5 × 1018 cm−3.

Directional Lasing in Coupled InP Microring/Nanowire Systems

AbstractThe realization of on‐chip microlasers with out‐of‐plane, controllable emission direction has been one of the core research themes in modern photonics. Traditional approaches for directional light scattering, including plasmonic nanoantennas and passive dielectric metasurfaces, are not suitable for on‐chip integration due to potential metallic contamination and reliance on external light sources. Meanwhile, achieving directional emission in active III–V microcavity lasers remains challenging due to geometrical symmetry and large free‐space coupling losses. Here, a novel approach is presented to realize directional lasing in an all‐dielectric, bottom‐up grown material system by coupling the laser emission from an InP microring cavity into a vertical nanowire at the ring center, which function as the photon source and directional antenna in the system, respectively. Efficient optical coupling is facilitated by enhanced light scattering at specific sidewall facets of the microring cavity, which can be engineered deterministically during epitaxial growth. Through Fourier imaging, out‐of‐plane laser emission with antenna‐like far‐field directivity in the coupled system is demonstrated. Furthermore, the emission directivity and side mode suppression in the coupled system can be improved significantly by tuning the geometric parameters of the system. The way for low power consumption, on‐chip microlasers with tunable emission directionality is paved here.

Vertical nanowires enhanced X-ray radiation damage of cells

Cell behavior is affected by nanostructured surface, but it remains unknown how ionizing radiation affects cells on nanostructured surface. This paper reports an experimental investigation of X-ray radiation induced damage of cells placed on an array of vertically aligned silicon nanowires. X-ray photoelectrons and secondary electrons produced from nanowire array are measured and compared to those from flat silicon substrate. The cell functions including morphology, viability, adhesion and proliferation have been examined and found to be drastically affected when cells are exposed to X-ray radiation, compared to those sitting on flat substrate and those only exposed to X-ray. The enhanced cell damage on nanowires upon X-ray exposure is attributed to nanowire enhanced production of photoelectrons including Auger electrons and secondary electrons, which have high escaping probability from sharp tips of nanowires. The escaped photoelectrons ionize water molecules and generate hydroxyl free radicals that can damage DNAs of cells. An inference of this work is that the contrast in scanning electron microscopy is useful in assessing the effects of nanomaterials for enhanced X-ray radiation therapy.

Analysis of synthesized doped vertical silicon nanowire arrays for effective sensing of nitrogen dioxide: As gas sensors

In the present study, the controllable fabrication of silicon nanowires (Si NWs) with vertical alignment was accomplished using metal assisted chemical etching (MACE). The different characteristics, such as structural, morphological, chemical, optical, and dielectric properties were analyzed using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Raman spectroscopy, ultraviolet-visible diffuse reflectance spectroscopy (UV-DRS), and LCR [inductance (L), capacitance (C), and resistance (R)] meter (volume of the gas-sensing chamber is 650 mm3). It was revealed from the morphological study i.e., from the FESEM that p-type Si NWs are smaller in size than n-type Si NWs which is attributable to the energy band gap. The optical band gap (Eg) is observed to increase from 1.64 to 1.89 eV with the decreasing of the crystallite size and the optical reflection spectra of the Si NWs show a shift toward a lower wavelength (blue shift). Moreover, Raman spectra verified the red-shifted, asymmetrically broadened Raman line-shapes, which provides information about the size confinement effect in Si NWs. The MACE approach is excellent for synthesizing nanowire structures for use in gas-sensing applications due to its flexibility. The sensitivity of synthesized Si NWs was tested for NO2 gas. The sensor method is unique based on the testing of the device in the presence of a test gas because the use of the gas-sensing setup has the potential to measure the change in resistance by varying frequency, temperature, and time.

Mechanical Characterization of Two-Segment Free-Standing ZnO Nanowires Using Lateral Force Microscopy

Mechanical characterization of quasi one-dimensional nanostructures is essential for the design of novel nanoelectromechanical systems. However, the results obtained on basic mechanical quantities, such as Young's modulus and fracture strength, show significant standard deviation in the literature. This is partly because of diversity in the quality of the nanowire, and partly because of inappropriately performed mechanical tests and simplified mechanical models. Here we present orientation-controlled bending and fracture studies on wet chemically grown vertical ZnO nanowires, using lateral force microscopy. The lateral force signal of the atomic force microscope was calibrated by a diamagnetic levitation spring system. By acquiring the bending curves of 14 nanowires, and applying a two-segment mechanical model, an average bending modulus of 108 ± 17 GPa was obtained, which was 23% lower than the Young's modulus of bulk ZnO in the [0001] direction. It was also found that the average fracture strain and stress inside the nanowire was above 3.1 ± 0.3 % and 3.3 ± 0.3 GPa, respectively. However, the fracture of the nanowires was governed by the quality of the nanowire/substrate interface. The demonstrated technique is a relatively simple and productive way for the accurate mechanical characterization of vertical nanowire arrays.

The Array of Si Nanowires Covered with Ag Nanoparticles by ALD: Fabrication Process and Optical Properties

In this work, we proposed a method for creating an Ag/Si composite structure consisting of an array of vertical silicon nanowires (SiNWs) decorated with silver nanoparticles (AgNPs). A two-stage metal-assisted chemical etching of Si was used to obtain the SiNW array, and atomic layer deposition was used to fabricate the AgNPs. A uniform distribution of AgNPs along the SiNW height was achieved. The measured characteristics by spectroscopic ellipsometry directly established the presence of AgNPs deposited on the SiNWs. The height of the sublayers and the fractions of Si and Ag in them were determined using the multilayer model and the effective Bruggeman medium approximation in the interpretation of the experimental data. For AgNP layers deposited on an Si wafer surface, the thickness (from 2.3 to 7.8 nm) and complex dielectric functions were verified within the framework of the Drude–Lorentz model. The optical properties of Ag/SiNW structures with complex spatial geometry were simulated in the COMSOL Multiphysics software. The expected localization of the electric field on the surface and near the AgNP was observed as a result of the plasmon resonance excitation. The calculated enhancement factor reached 1010, which indicates the possibility of using such structures as substrates for surface-enhanced Raman scattering.

Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO2 Nanowire Arrays on Nanoimprinted Si Substrates.

In the present article, the position-controlled and catalytic-free synthesis of vanadium dioxide (VO2) nanowires (NWs) grown by the chemical vapor deposition (CVD) on nanoimprinted silicon substrates in the form of nanopillar arrays was analyzed. The NW growth on silicon nanopillars with different cross-sectional areas was studied, and it has been shown that the NWs' height decreases with an increase in their cross-sectional area. The X-ray diffraction technique, scanning electron microscopy, and X-ray photoelectron spectroscopy showed the high quality of the grown VO2 NWs. A qualitative description of the growth rate of vertical NWs based on the material balance equation is given. The dependence of the growth rate of vertical and horizontal NWs on the precursor concentration in the gas phase and on the growth time was investigated. It was found that the height of vertical VO2 NWs along the [100] direction exhibited a linear dependence on time and increased with an increase in the precursor concentration. For horizontal VO2 NWs, the height along the direction [011] varied little with the growth time and precursor concentration. These results suggest that the high-aspect ratio vertical VO2 NWs formed due to different growth modes of their crystal faces forming the top of the growing VO2 crystals and their lateral crystal faces related to the difference between the free energies of these crystal faces and implemented experimental conditions. The results obtained permit a better insight into the growth of high-aspect ratio VO2 NWs and into the formation of large VO2 NW arrays with a controlled composition and properties.

Thermally Stable Single-Transistor Neuron for Reliable Neuromorphic System

A thermally stable single-transistor neuron (1T-neuron) that uses a vertical nanowire Si MOSFET is demonstrated. The concept of a single-transistor latch (STL) in a MOSFET, which is used to mimic neural firing in a biological neuron, is sensitive to the temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> ) because it generally occurs due to impact ionization (I.I.). As an alternative to the thermally sensitive I.I., thermally insensitive band-to-band tunneling (BTBT) is used to enable the STL to function. Neuronal operation with thermal stability is thereby achieved. It is verified in spiking neural network (SNN) simulations that the recognition ability of handwritten digits in the MNIST dataset was not sensitive to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> .

Criterion for Selective Area Growth of III-V Nanowires.

A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within the openings and the absence of parasitic III-V crystallites or group III droplets on the mask, is established, taking into account the minimum chemical potential of the III-V pairs required for nucleation on different surfaces, and the surface diffusion of the group III adatoms. The SAG maps are plotted in terms of the material fluxes versus the temperature. The non-trivial behavior of the SAG window, with the opening size and pitch, is analyzed, depending on the direction of the diffusion flux of the group III adatoms into or from the openings. A good correlation of the model with the data on the SAG of vertical GaN NWs and planar GaAs and InAs NWs by molecular beam epitaxy (MBE) is demonstrated.

A Vertical Single Transistor Neuron with Core-Shell Dual-Gate for Excitatory-Inhibitory Function and Tunable Firing Threshold Voltage.

A novel inhibitable and firing threshold voltage tunable vertical nanowire (NW) single transistor neuron device with core–shell dual-gate (CSDG) was realized and verified by TCAD simulation. The CSDG NW neuron is enclosed by an independently accessed shell gate and core gate to serve an excitatory–inhibitory transition and a firing threshold voltage adjustment, respectively. By utilizing the shell gate, the firing of specific neuron can be inhibited for winner-takes-all learning. It was confirmed that the independently accessed core gate can be used for adjustment of the firing threshold voltage to compensate random conductance variation before the learning and to fix inference error caused by unwanted synapse conductance change after the learning. This threshold voltage tuning can also be utilized for homeostatic function during the learning process. Furthermore, a myelination function which controls the transmission rate was obtained based on the inherent asymmetry between the source and drain in vertical NW structure. Finally, using the CSDG NW neuron device, a letter recognition test was conducted by SPICE simulation for a system-level validation. This multi-functional neuron device can contribute to construct a high-density monolithic SNN hardware combining with the previously developed vertical synapse MOSFET devices.