Vertical Metalorganic Vapor Deposition Research Articles

A susceptor with a ∧-shaped slot in a vertical MOCVD reactor by induction heating

By using the numerical simulation for the temperature field in the metal organic vapor deposition (MOCVD) reactor by induction heating, it is found that the temperature distribution in the conventional cylinder-shaped susceptor is nonuniform due to the skin effect of the induced current, which makes the temperature distribution of the wafer nonuniform. Therefore, a novel susceptor with a ∧-shaped slot is proposed. This slot changes the mode and the rate of the heat transfer in the susceptor, which improves the uniformity of the temperature distribution in the wafer. By using the finite element method (FEM), the susceptor with this structure for heating a wafer of four inches in diameter is optimized. It is observed that the optimized susceptor with the ∧-shaped slot makes the uniformity of the temperature distribution in the wafer improve by more than 85%, and a good uniformity of temperature distributions is kept under different wafer temperatures, which may be beneficial to the film growth.

A susceptor with partial-torus groove in vertical MOCVD reactor by induction heating

A new susceptor with a partial-torus groove in the vertical metal organic vapor deposition (MOCVD) reactor by induction heating is presented. By using the finite element method (FEM), it is found that this groove changes the mode of the heat transfer in the susceptor. That is to say, the single mode of the heat conduction in the conventional susceptor is changed to the modes combining the heat conduction and the radiation. By optimizing this susceptor for heating 8-inch substrate, it is observed that compared with the conventional susceptor, the uniformity of the temperature distribution is improved more than 83%. The uniformity of the temperature distribution in the substrate is significantly improved, which will be of benefit to the film growth.

Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition

ZnO films were grown at low pressure in a vertical metal-organic vapor deposition ( MOCVD) reactor with a rotating disk. The structural and morphological properties of the ZnO films grown at different disk rotation rate ( DRR) were investigated. The growth rate increases with the increase of DRR. The ZnO film grown at the DRR of 450 revolutions per minute (rpm) has the lowest X-ray rocking curve full width at half maximum and shows the best crystalline quality and morphology. In addition, the crystalline quality and morphology are improved as the DRR increased but both are degraded when the DRR is higher than 450 rpm. These results can help improve in understanding the rotation effects on the ZnO films grown by MOCVD.