The demand for larger diameter, low dislocation density InP substrates has traditionally been filled by highly doped LEC-grown material. We describe the use of the vertical gradient freeze (VGF) technique to produce uniformly high quality wafers from 〈111〉 seeded, 750 g, 50 mm diameter single crystals. Typical dislocation levels are in the low 10 2 cm -2 range, independent of doping level. The dislocations are shown to be uniformly distributed across a wafer and from seed to tail. This adaptation of the VGF technique features seeded growth in pyrolytic boron nitride crucibles under low axial and radial thermal gradients as well as independent stoichiometry control. The reduction of thermally generated strain eliminates the need for impurity hardening of InP to achieve low defect levels. Comparisons with typical LEC results will be made in terms of growth striae, defect distribution and incidence of slip, as well as stoichiometry control. The design of the crystal growth equipment, the growth sequence and aspects of the process control will be discussed. Impurity incorporation will be discussed in terms of spark source mass spectrometry and low temperature compensation ratio estimates. Comparisons of room temperature mobilities are made with other high purity InP material.