Vertical Devices Research Articles

2D Gr/WSe2/MoTe2 vertical heterojunction for self-powered photodiode with ultrafast response and high sensitivity

Two-dimensional materials without lattice constraints can be combined into form heterojunctions via van der Waals forces, providing opportunities for the future development of novel high-performance photodetectors. In non-vertical heterojunction devices with long carrier transport channels, SRH recombination due to defect and interface states in the heterojunction and Langevin recombination due to Coulomb interactions induce large amounts of photogenerated carrier recombination, leading to low quantum efficiencies of the heterojunction. At the same time, defect and interface trap states, as well as the long channel of the non-vertical heterojunction device, lead to a slow response speed of the device. In this work, a 2D WSe2/MoTe2 vertical heterojunction photodiode with a transparent graphene top electrode has been designed to simultaneously achieve high sensitivity and fast response speed of photodetectors. Benefiting from the vertical device structure, high-quality interface and low contact resistance, the photogenerated electron-hole pairs can be efficiently separated and transported. The photodiode exhibits remarkable rectification characteristics with a rectification ratio as high as 1.4 × 104, and provides a broadband and self-powered photodetection from the visible to NIR bands (405–1064 nm) with a maximum responsivity of 0.33 A/W at 785 nm. In particular, the photodiode achieves an ultra-fast rise/fall time of 6.49/6.22 μs at 0 V and a further reduction of the response time to 1.68/1.2 μs at a reverse bias of −1 V. This ultra-fast response allows the photodiode to detect switching signals with a cutoff frequency of more than 70 kHz and 200 kHz at 0 V and −1 V, respectively. This work opens up new opportunities for the development of integrated 2D photodetectors with low power consumption, high sensitivity, and high speed.

Large-scale sub-5-nm vertical transistors by van der Waals integration

Vertical field effect transistor (VFET), in which the semiconductor is sandwiched between source/drain electrodes and the channel length is simply determined by the semiconductor thickness, has demonstrated promising potential for short channel devices. However, despite extensive efforts over the past decade, scalable methods to fabricate ultra-short channel VFETs remain challenging. Here, we demonstrate a layer-by-layer transfer process of large-scale indium gallium zinc oxide (IGZO) semiconductor arrays and metal electrodes, and realize large-scale VFETs with ultra-short channel length and high device performance. Within this process, the oxide semiconductor could be pre-deposited on a sacrificial wafer, and then physically released and sandwiched between metals, maintaining the intrinsic properties of ultra-scaled vertical channel. Based on this lamination process, we realize 2 inch-scale VFETs with channel length down to 4 nm, on-current over 800 A/cm2, and highest on-off ratio up to 2 × 105, which is over two orders of magnitude higher compared to control samples without laminating process. Our study not only represents the optimization of VFETs performance and scalability at the same time, but also offers a method of transfer large-scale oxide arrays, providing interesting implication for ultra-thin vertical devices.

Internal flow stability analysis of vertical mixed-flow pump device based on EGT and FFT

With the purpose of researching the internal flow stability of the vertical mixed-flow pump device (VMFPD), the entire flow field was solved through the very large-eddy simulation (VLES) k- ω model and the internal flow characteristics of the pump device were quantitatively analyzed with the use of the energy gradient theory (EGT) along with the physical parameters of the flow field. The research elucidates the variety rule of the pressure along the VMFPD and the energy gradient function K as well as the time-frequency features of the pressure pulsation (PP) in the impeller and guide vane. The results demonstrate that the solid wall restriction of the guide vane and the impeller rotation cause a significant shift in the velocity and direction of the water flow. This causes a significant pressure difference between the water bodies, which makes it easier to create an unstable flow. The suction surface of the impeller blade possesses the great concentration of the area with energy gradient function K > 107, which is the critical area influencing the internal flow stability of the pump device.

Estimation of Electron Drift Mobility along the <i>c</i>-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes

Electron mobility along the c-axis is the most important in SiC because the current flows along this direction in vertical SiC devices. However, previous reports on the drift mobility along the c-axis are still limited because of the difficulty of sample preparation or analysis. In this study, the authors presented the method to estimate the electron drift mobility of a lightly-doped epitaxial layer by using SiC(0001) vertical Schottky barrier diodes (SBDs). For the analyses, the effects of current spreading and series resistance were carefully considered based on experimental results obtained from SBDs with various device parameters, leading to a more accurate estimation. The mobility along the c-axis was obtained as 1070 ± 290 cm2/Vs for a donor density of 1 × 1015 cm-3, and it was compared with the results by Hall effect measurement.

Poly-SiC Characterization and Properties for SmartSiC™

SmartSiC™ products developed by Soitec in the past four years consist of a high quality monocrystalline silicon carbide (m-SiC) on the top of an ultra-low resistivity polycrystalline silicon carbide (p-SiC or poly-SiC), the interface being electrically conductive. These engineered substrates are intended to bring added value for vertical power devices compared to standard m-SiC, by leveraging the wide bandgap (WBG) properties of the m-SiC and the enhanced p-SiC properties of the base substrate. Thus, it is of paramount importance to understand and monitor the p-SiC properties. In this paper, we present its electrical resistivity, microstructure and texture measurements through SEM and EBSD, thermal conductivity through Laser Flash Anneal (LFA), and Young modulus measurements.

Molecular Engineering Regulation Achieving Out-of-Plane Polarization in Rare-Earth Hybrid Double Perovskites for Ferroelectrics and Circularly Polarized Luminescence.

Out-of-plane polarization is a highly desired property of two-dimensional (2D) ferroelectrics for application in vertical sandwich-type photoferroelectric devices, especially in ultrathin ferroelectronic devices. Nevertheless, despite great advances that have been made in recent years, out-of-plane polarization remains unrealized in the 2D hybrid double perovskite ferroelectric family. Here, from our previous work 2D hybrid double perovskite HQERN ((S3HQ)4EuRb(NO3)8, S3HQ=S-3-hydroxylquinuclidinium), we designed a molecular strategy of F-substitution on organic component to successfully obtain FQERN ((S3FQ)4EuRb(NO3)8, S3FQ=S-3-fluoroquinuclidinium) showing circularly polarized luminescence (CPL) response. Remarkably, compared to the monopolar axis ferroelectric HQERN, FQERN not only shows multiferroicity with the coexistence of multipolar axis ferroelectricity and ferroelasticity but also realizes out-of-plane ferroelectric polarization and a dramatic enhancement of Curie temperature of 94 K. This is mainly due to the introduction of F-substituted organic cations, which leads to a change in orientation and a reduction in crystal lattice void occupancy. Our study demonstrates that F-substitution is an efficient strategy to realize and optimize ferroelectric functional characteristics, giving more possibility of 2D ferroelectric materials for applications in micro-nano optoelectronic devices.

Hybrid III Manikin Lumbar Spine Loading Under Vertical Impact.

Clinical investigations have attributed lumbar spine injuries in combat to the vertical vector. Injury prevention strategies include the determination of spine biomechanics under this vector and developing/evaluating physical devices for use in live fire and evaluation-type tests to enhance Warfighter safety. While biological models have replicated theater injuries in the laboratory, matched-pair tests with physical devices are needed for standardized tests. The objective of this investigation is to determine the responses of the widely used Hybrid III lumbar spine under the vertical impact-loading vector. Our custom vertical accelerator device was used in the study. The manikin spinal column was mounted between the inferior and superior six-axis load cells, and the impact was delivered to the inferior end. The first group of tests consisted of matched-pair repeatability tests, second group consisted of adding matched-pair tests to this first group to determine the response characteristics, and the third group consisted of repeating the earlier two groups by changing the effective torso mass from 12 to 16 kg. Peak axial, shear, and resultant forces at the two ends of the spine were obtained. The first group of 12 repeatability tests showed that the mean difference in the axial force between two tests at the same velocity across the entire range of inputs was <3% at both ends. In the second group, at the inferior end, the axial and shear forces ranged from 4.9-25.2 kN to 0.7-3.0 kN. Shear forces accounted for a mean of 11 ± 6% and 12 ± 4% of axial forces at the two ends. In the third group of tests with increased torso mass, repeatability tests showed that the mean difference in the axial force between the two tests at the same velocity across the entire range of inputs was <2% at both ends. At the inferior end, the axial and shear forces ranged from 5.7-28.7 kN to 0.6-3.4 kN. Shear forces accounted for a mean of 11 ± 8% and 9 ± 3% of axial forces across all tests at the inferior and superior ends. Other data including plots of axial and shear forces at the superior and inferior ends across tested velocities of the spine are given in the paper. The Hybrid III lumbar spine when subjected to vertical impact simulating underbody blast levels showed that the impact is transmitted via the axial loading mechanism. This finding paralleled the results of axial force predominance over shear forces and axial loading injuries to human spines. Axial forces increased with increasing velocity suggesting the possibility of developing injury assessment risk curves, i.e., the manikin spine does not saturate, and its response is not a step function. It is possible to associate probability values for different force magnitudes. A similar conclusion was found to be true for both magnitudes of added effective torso mass at the superior end of the manikin spinal column. Additional matched-pair tests are needed to develop injury criteria for the Hybrid III male and female lumbar spines.

(Electronics and Photonics Division Award) Research Advances Wide- and Ultrawide-Bandgap Power Switching Devices

Wide bandgap semiconductors such as SiC and GaN (WBG) and emerging ultrawide-bandgap materials such as Ga2O3, AlGaN, and Diamond (UWBG) represent the next-generation materials for high performance medium voltage and high voltage power switch technology. Such devices have a wide range of immediate Naval applications, including high-power satellite communications and radar, unmanned underwater and aerial vehicles, ship drive components, and hybrid vehicle inverters. Vertical SiC power device technology has matured rapidly over the past two decades, owing to advances in substrates, a fundamental understanding of epitaxial growth to eliminate performance-limiting defects, as well as device design breakthroughs. This has enabled breakthroughs in highly integrated module design for medium voltage power conversion with switching frequency >100 kHz. In parallel, lateral GaN-based high electron mobility transistor (HEMT) technology has been highly successful for RF power amplifiers and is well positioned to supersede GaAs-based microwave circuits. Recently, GaN-based vertical and lateral power devices have attracted significant interest due to promising device results coupled with progress in native substrate, epitaxial growth, and processing technology developments. This seminar will present an overview of the WBG/UWBG power device efforts at NRL. This research has four primary focus areas – 1) thermal management in III-N power device structures by diamond thin film integration, 2) characterization of substrate materials and homoepitaxial layers used for drift regions of power devices identify appropriate specifications and benchmark performance, 3) process module development, particularly for selective area doping by ion implantation, and 4) pilot production manufacturing of 1.2kV-class PiN diodes including reliability assessments to identify and mitigate performance limiting defects.

Intrinsic Out-Of-Plane and In-Plane Ferroelectricity in 2D AgCrS2 with High Curie Temperature.

2D ferroelectric materials have attracted extensive research interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics. However, the available 2D ferroelectric materials are scarce and most of them are limited by the uncontrollable preparation. Herein, a novel 2D ferroelectric material AgCrS2 is reported that are controllably synthesized in large-scale via salt-assist chemical vapor deposition growth. By tuning the growth temperature from 800 to 900°C, the thickness of AgCrS2 nanosheets can be precisely modulated from 2.1 to 40nm. Structural and nonlinear optical characterizations demonstrate that AgCrS2 nanosheet crystallizes in a non-centrosymmetric structure with high crystallinity and remarkable air stability. As a result, AgCrS2 of various thicknesses display robust ferroelectric polarization in both in-plane (IP) and out-of-plane (OOP)directions with strong intercorrelation and high ferroelectric phase transition temperature (682 K). Theoretical calculations suggest that the ferroelectricity in AgCrS2 originates from the displacement of Ag atoms in AgS4 tetrahedrons, which changes the dipole moment alignment. Moreover, ferroelectric switching is demonstrated in both lateral and vertical AgCrS2 devices, which exhibit exotic nonvolatile memory behavior with distinct high and low resistance states. This study expands the scope of 2D ferroelectric materials and facilitates the ferroelectric-based nonvolatile memory applications.

Electric-Field-Driven Localization of Molecular Nanowires in Wafer-Scale Nanogap Electrodes.

As integrated circuits continue to scale toward the atomic limit, bottom-up processes, such as epitaxial growth, have come to feature prominently in their fabrication. At the same time, chemistry has developed highly tunable molecular semiconductors that can perform the functions of ultimately scaled circuit components. Hybrid techniques that integrate programmable structures comprising molecular components into devices however are sorely lacking. Here we demonstrate a wafer-scale process that directs the localization of a conductive polymer, Mw = 20 kg mol-1 polyaniline, from dilute solutions into 50 nm vertical nanogap device architectures using electric-field-driven self-assembly. The resulting metal-polymer-metal junctions were characterized by electron microscopy, Raman spectroscopy and transport measurements demonstrating that our technique is highly selective, assembling conductive polymers only in electrically activated nanogaps. Our results represent a step toward scalable hybrid nanoelectronics that seamlessly integrate established lithographic top-down fabrication with bottom-up synthesized molecular functional circuit components.

Effect of chemical absorption on Jeffery Fluid Flow in saturated Porous Media with variable thermal conductivity

This study investigates the impact of species absorption of Jeffery fluid flow through a saturated permeable medium with variable thermal conductivity. The dimensional partial nonlinear derivative model controlling the chemical reacting fluid flow is transformed to invariant form. The resulting flow equations are computed numerically using an approximated finite implicit Crack-Nicolson. A chemical absorption of fluid reactant occurs in a boundless vertical device. Computations are performed for different parameters to examine their sensitivity under isothermal temperature conditions. The computed results are offered graphically for qualitative and quantitative insights into the flow behaviour. The obtained outcomes revealed that the fluid flow rate rises with an increasing values of the parameters and, and it damps with upsurge in the values of the parameters, and. The heat transfer field is reduced with enhancing values of the thermal source, viscous dissipation and time, but declines for a boosted value of the terms suction and Prandtl number. Also, the mass transfer field is higher when mass absorption and time are increased, and diminish with an elevate in the values of Schmidt number and chemical reactions.

Experiment and analysis of air spring vertical seismic isolation device

To address the shortcomings of poor isolation performance in traditional rubber vertical seismic isolation devices and the large deformation in spring vertical seismic isolation devices, an air spring vertical seismic isolation device (ASVSID) utilizing compressed air for seismic isolation was proposed. The construction of the ASVSID was introduced, the material properties of the air spring (AS) capsule skin based on single and biaxial stress state were tested, the vertical mechanical properties of the ASVSID were experimentally studied, and the finite element (FE) method and the calculation method of the ASVSID based on biaxial stress state of the AS capsule skin were given. The research results show that the load displacement of the ASVSID exhibits nonlinear characteristics, and its vertical mechanical properties are obviously affected by air pressure of the AS. The material properties of the AS capsule skin are different under single and biaxial stress state. Through comparison with the test results, the proposed FE method based on biaxial stress state of the AS capsule skin can accurately simulate the ASVSID. In addition, the calculation method based on biaxial stress state of the AS capsule skin also can accurately calculate the vertical mechanical property parameters of the ASVSID.

Test and analysis of energy characteristics of large vertical submersible pumps

The efficiency of the pump device is an important parameter to judge the overall dynamic performance of the pumping station. The commonly used method at home and abroad is to carry out model tests of the pump device. The performance parameters of the prototype pump and pump device are obtained by the similarity conversion formula. However, at present, there are not many device model tests for large vertical submersible pumps. Taking a large vertical submersible mixed-flow pumping station in China as an example, research predicted the performance of the pump device through a model test and a submersible pump prototype test. The results show that the model test of the large vertical submersible mixed-flow pump device has a maximum efficiency of approximately 77.8%, and the prototype test conversion device has a maximum efficiency of approximately 80.33%. The device model test and the pump factory prototype test results are compared. It is found that the performance parameters of the pump measured by the prototype test are in good agreement with the device model test under the design conditions, and there is a certain error when the deviation from the design conditions is significant. The device model test and the factory test of the pump are indispensable in the large-scale road of submersible pumps, and a large number of tests are needed to sum up the experience.

Use of a new vertical traction device for early traction-assisted staged closure of congenital abdominal wall defects: a prospective series of 16 patients

PurposeAbdominal wall closure in patients with giant omphalocele (GOC) and complicated gastroschisis (GS) remains to be a surgical challenge. To facilitate an early complete abdominal wall closure, we investigated the combination of a staged closure technique with continuous traction to the abdominal wall using a newly designed vertical traction device for newborns.MethodsFour tertiary pediatric surgery departments participated in the study between 04/2022 and 11/2023. In case primary organ reduction and abdominal wall closure were not amenable, patients underwent a traction-assisted abdominal wall closure applying fasciotens®Pediatric. Outcome parameters were time to closure, surgical complications, infections, and hernia formation.ResultsTen patients with GOC and 6 patients with GS were included. Complete fascial closure was achieved after a median time of 7 days (range 4–22) in GOC and 5 days (range 4–11) in GS. There were two cases of tear-outs of traction sutures and one skin suture line dehiscence after fascial closure. No surgical site infection or signs of abdominal compartment syndrome were seen. No ventral or umbilical hernia occurred after a median follow-up of 12 months (range 4–22).ConclusionTraction-assisted staged closure using fasciotens®Pediatric enabled an early tension-less fascial closure in GOC and GS in the newborn period.

High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes

We report on the growth of Si-doped homoepitaxial β-Ga2O3 thin films on (010) Ga2O3 substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium (TEGa) and trimethylgallium (TMGa) precursors. The epitaxial growth achieved an impressive 9.5 μm thickness at 3 μm/h using TMGa, a significant advance in material growth for electronic device fabrication. This paper systematically studies the Schottky barrier diodes fabricated on the three MOCVD-grown films, each exhibiting variations in the epilayer thickness, doping levels, and growth rates. The diode from the 2 μm thick Ga2O3 epilayer with TEGa precursor demonstrates promising forward current densities, the lowest specific on-resistance, and the lowest ideality factor, endorsing TEGa’s potential for MOCVD growth. Conversely, the diode from the 9.5 μm thick Ga2O3 layer with TMGa precursor exhibits excellent characteristics in terms of lowest leakage current, highest on-off ratio, and highest reverse breakdown voltage of −510 V without any electric field management, emphasizing TMGa’s suitability for achieving high growth rates in Ga2O3 epilayers for vertical power electronic devices.

Clavicular tunnel widening in chronic acromioclavicular joint instabilities after primary versus revision arthroscopically-assisted acromio- and coracoclavicular stabilization.

To evaluate joint reduction (loss of reduction [LOR]; dynamic posterior translation [DPT]) and clavicular tunnel widening (cTW) in patients treated with arthroscopically-assisted acromioclavicular joint (ACJ) stabilization after previously failed nonoperative versus surgical treatment. Patients undergoing arthroscopically-assisted ACJ stabilization (bidirectional tendon allograft with a low-profile TightRope) after previously failed nonoperative versus surgical treatment were included retrospectively. Bilateral anteroposterior stress views served for evaluating LOR (side-comparative coracoclavicular distance [CCD]) and cTW at a 6-weeks- and 6-months-follow-up (FU) and for evaluating the filling ratio (FR, vertical device insertion depth relative to clavicle height) at the 6-weeks-FU. Postoperative DPT was assessed on Alexander's views. Twenty-seven patients (20 male, mean age 46.1 ± 14.8 years) were included (prior treatment: nonoperative: n = 15; surgical: n = 12). There were no differences in LOR, DPT or cTW between groups postoperatively. Initial CCD-symmetry at the 6-weeks-FU (CCD: -0.1 mm [95% confidence interval, CI, -2 to 1.4 mm]) was followed by LOR at the 6-months-FU (CCD: -3.5 mm [95% CI, -5.2 to -1.9 mm]; p < 0.001). cTW increased towards the inferior cortex, compared to the superior cortex and the intermediate level (p < 0.001, respectively). cTW at the inferior cortex was associated with more LOR (r = -0.449; p = 0.024) and DPT (r = 0.421; p = 0.036), dependent on a smaller FR (r = -0.430; p = 0.032). Patients undergoing arthroscopically-assisted ACJ stabilization for chronic bidirectional ACJ instabilities showed comparable radiologic results after previous nonoperative versus surgical treatment. cTW increased towards the inferior cortex and was associated with recurrent vertical and horizontal instability, related to a smaller FR. More research into reduced cTW, for example, by a more filling device, should be performed. Level III, retrospective comparative study.

Параметры шагающего устройства для добычи полезных ископаемых, рассредоточенных по морскому дну

The purpose of the work is to analyze the aggregates of complexes for the extraction of marine minerals. In particular, the variants of complexes, their advantages and disadvantages are considered. The complex is analyzed, which uses robotic pickers/reclaimers of the walking type to perform mining operations of ferromanganese nodules (FMN) or cobalt-bearing manganese crusts (CMC). Results. The variants of complexes for mining of bottom deposits are analyzed, advantages and disadvantages of different variants are indicated. The device for collecting minerals on the bottom, developed in SPMU, is described, laboratory studies of the model of such a device are considered, the main parameters are presented, the dependence of productivity on the size and time of operations of the cycle of work is indicated. It is determined that for minimal impact on the seabed biota it is necessary to use walking submersibles with an actuator for extraction in the form of rarefaction chambers or a grapple with an impactor (depending on the type of solid minerals). It is shown that the productivity of the walking underwater vehicle varies with the diameter of the rarefaction chamber plates: the optimum plate diameter is 1.5 m. Experimental study of hydrodynamic resistance of “foot” models with different midships cross-section has been carried out. According to the experimental results, the conclusion about the preferred design of the “foot” was made: the cross-section should be a streamlined shape with the smallest drag coefficient cx and have a continuous surface without holes. Experimental studies of tine models movement in water have shown that it is reasonable to use as tine parts the structures without holes, streamlined ellipsoidal shape. Calculations of productivity of mining units when using rope hoisting from the bottom to the ship have shown the necessity of using four or more hoisting devices for realization of the required annual productivity of more than 1 million tons per year. The stages of creating a workable extraction unit including a vessel, vertical lifting device and a system of deep-water collectors require very significant material and monetary costs, so they should be carried out in accordance with the R&amp;D plan and tasks of the relevant ministry and agency and require coordination of efforts of investors, scientists and machine builders.

Study on vertical isolation effect of ring springs in single-layer spherical reticulated dome structures

Ring springs have the advantages of simple structure, small space occupation and strong buffering capacity, so a ring spring vertical isolation device (RSVID) is proposed. The structure and working principle of RSVID are explained. In order to apply RSVID to the numerical model of the overall structure, OpenSees is redeveloped and a mechanical model that simulates RSVID is added to its material library. The design goal of this study is to extend the natural vibration period of the isolated structure, which is used to determine the stiffness of ring spring. Subsequently, RSVID and friction pendulum isolation bearings are combined to form a 3D isolation system which is applied to 60-meter span single-layer spherical reticulated domes, and then the numerical model of isolated structure and original structures are established in OpenSees software. The simulation results show that the isolation effect of 3D-isolated structure with RSVID is better than that of horizontal isolated structure.

Research of boiling flow parameters in vertical evaporators of marine refrigeration machines

In this work, the subject of research is hydrodynamics, and in particular, the hydraulic resistance of a boiling two-phase flow moving in vertical and inclined pipes of evaporators of ship refrigeration units. Such movement is typical for various types of industrial heat exchange equipment, including the development of promising types of evaporators, for example, vertical devices for ships in which in-tube boiling of liquid refrigerant occurs. Experiments were carried out to study hydraulic resistance in vertical pipes with different channel diameters and lengths. The main dependencies of the various components of hydraulic resistance that arise during the movement of a boiling two-phase flow are presented. Based on the data obtained, the prospects of transitioning ship evaporators of refrigeration units to a vertical arrangement of heat exchange tubes are shown. When applied to ship refrigeration machines, we can say that the transition to vertical units has its advantages, primarily in reducing pressure losses. The resulting set of data allows us to recommend the design of vertical evaporators for auxiliary ship installations.

Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates

Herein, the fabrication and characterization of vertical GaN trench‐MOSFETs on ammonothermally grown bulk GaN substrates have been reported. A number of technological processes have been developed, including, among others, low‐resistance ohmic contacts to Ga‐face n‐GaN epitaxial layers, N‐face backside ohmic contact, vertical sidewall trench etching processes, surface preparation, and atomic layer deposition of gate dielectric layers and integrated with fabrication process flow of vertical power devices. The fabricated test structures are characterized by an output drain current of 288 ± 74 mA mm−1, threshold voltage of about 10 V, and field‐effect channel mobility 13.1 ± 5.0 cm2 (Vs)−1 at 10 V drain‐source voltage and up to 65 cm2 (Vs)−1 at 0.1 V drain‐source voltage. In addition, first, experiments toward high current multicell transistor fabrication are carried out. Multicell test devices with hexagonal topology with a total gate width of 11.1 mm and output current over 1 A are successfully fabricated and characterized.