In this study, the optical band-gap energy (Eg) was investigated with respect to MnO2 and sintering temperatures on ZnO based varistor ceramics. Eg of the ceramic (99-x) mol% ZnO + 0.5 mol% Bi2O3 + 0.5 mol% TiO2 + × MnO2 where × = 0, 0.2, 0.4, 0.6 and 0.8 mol%, were determined using UV-Vis spectrophotometer. The samples was prepared through solid-state route and sintered at the sintering temperature from 1110, 1140 and 1170 °C for 45 and 90 min in open air. At no doping of MnO2, the values of Eg are 2.991 ± 0.001, 2.989 ± 0.001 eV for 45 and 90 min sintering time; respectively. Eg was decreased to 2.192 ± 0.001 eV at 1140 °C at 45 min sintering time. Similar result of Eg was observed at longer heat treatment. Further addition of dopant causing the Eg decreases rapidly to 2.099 and 2.106 ± 0.001 eV at 45 and 90 min sintering time; respectively. XRD analysis indicates that there is hexagonal ZnO and secondary phases, Zn2MnO4, Bi4Ti3O12 and Zn2Ti3O8. The relative density of the sintered ceramics decreased or remain constant with the increase of MnO2 concentration for 45 min sintering time, however, further prolong sintering time; the relative density decreases form 90.25 to 88.35%. This indicates the pores are increasing with the increase of heat treatment. The variation of sintering temperatures to the optical band gap energy of based ZnO varistor doped with MnO2 due to the formation of interface states.
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