Variation Of Carrier Concentration Research Articles

Insights into enhanced thermoelectric performance of the n-type Mg3Sb2-based materials by amphoteric Al doping

Doping has the potential to alter the levels of anharmonicity in compounds by attenuating bonding strength. In this study, we explore the efficacy of amphoteric Al doping for stimulating anharmonicity in n-type Mg3.25AlxSb1.48Bi0.48Te0.04 to attain enhanced phonon scattering and thermoelectric performance. First-principles calculations and experimental data reveal the occupation of both Sb and Mg2 sites by amphoteric Al atoms in the anionic framework of Mg3.25AlxSb1.48Bi0.48Te0.04. A marginal variation in both carrier concentration and mobility sustains the high power factor without affecting the Seebeck coefficient, implying amphoteric doping induced charge compensation. While phonon velocity, Grüneisen parameter, and crystal orbital Hamilton population calculations results indicate that phonon softening and bond weakening are realized via Al doping, leading to an enhanced lattice anharmonicity and a reduced lattice thermal conductivity. A remarkable enhancement ∼16% in the peak figure of merit ZTpeak and the average ZTavg, was attained for the x = 0.015 sample, when compared with the un-doped sample. Hence, the amphoteric doping can serve as an effective means to optimize ZT values by decoupling the intertwined thermoelectric transport properties.

Evolution of thermoelectric transport properties of Sb2Te3–Sb2Se3 solid-solution alloys depending on phase formation behavior

Sb2Te3-based alloys exhibit decent thermoelectric transport properties in the mid-temperature range above 550 K. However, the study on Sb2Te3 alloys has been limited in simple doping approach. Herein, evolution in the thermoelectric transport properties associated with the phase formation of solid solution alloys of Sb2(Te1−xSex)3 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1.0) compositions is investigated to widen the strategy to solid solution alloying. A single phase of the Sb2Te3 rhombohedral structure formed from x = 0 to 0.5, whereas mixed phases with an orthorhombic structure of Sb2Se3 was observed at x = 0.75. The electrical conductivity weighted mobility were gradually decreased as Se content increases to x = 0.75. Consequently, the power factor was decreased gradually and significantly to 0.076 mW/mK2 for x = 0.75 (Sb2(Te0·25Se0.75)3) compared with 2.6 mW/mK2 of the pristine sample. The total thermal conductivity of 2.0 W/mK for the Sb2Te3 was significantly reduced gradually to 0.64 W/mK for x = 0.75 owing to simultaneous decrease in electrical and lattice thermal conductivities. The reduction in lattice thermal conductivity is mainly owing to the addition point defect scattering caused by the Se addition. Nevertheless, thermoelectric figure of merit zT of Sb2Te3 is gradually decreased from 0.64 to 0.11 for x = 0.75 at 650 K due to the degradation in electrical transport properties. Furthermore, the theoretical zT was estimated for all samples with varying carrier concentration based on single parabolic band model.

Boosting the efficiency up to 33 % for chalcogenide tin mono-sulfide-based heterojunction solar cell using SCAPS simulation technique

In the present article, an FTO/n-ZnO/SnS/Sb2S3/Au heterojunction photovoltaic cell structure was modeled and the cell performance in terms of output parameters viz. open circuit voltage (Voc), short-circuit current density (Jsc), efficiency (η) and fill factor (FF) by varying carrier concentration, and thickness of different layers involved, was studied at ambient conditions. The overall theoretical performance of the designed photovoltaic cell was examined using SCAPS 1-D simulation programme. The simulation programme operates by resolving semiconductor equations such as the Poisson equation, drift-diffusion equation, and continuity equation for both electrons and holes. The equations are generally solved in one-dimension (1D) in a steady state condition. The role of Sb2S3 HTL on the performance study of tin sulfide chalcogenide-based heterojunction photovoltaic cell (HPVC) was also analyzed. Moreover, the impact of functioning temperature between 273 K and 350 K on the performance of photovoltaic cell was observed, and an increase in temperature resulted in poor performance. The impact of different metal back contact work functions and some more electrical parameters viz. series-shunt resistances, defect concentration of layers and interfaces, and radiative recombination coefficients were also observed on HPVC. The simulation results revealed that the HTL Sb2S3 forms proper band alignment with the SnS chalcogenide absorber layer and enhanced the efficiency, η of HPVC by lessening the carrier recombination at the rear contact side. The dislocation and interface defect reduced significantly which leads to the smooth conduction of hole carriers, therefore, preventing of minority carriers to recombine within the absorber. A significant increase in the efficiency ∼33.24 % together with performance cell parameters Jsc ∼34.38 mA/cm2, Voc ∼1.09 V, and FF ∼88.49 % was observed.

Optimizing Sb2Se3 thin-film solar cells: A comprehensive simulation study of multiple influential factors

This article presents a comprehensive simulation study of Sb2Se3-based thin-film solar cells, exploring critical parameters that influence their performance and efficiency. We demonstrate that tuning the Sb2Se3 thickness offers a versatile approach to optimize light absorption and charge transport, offering promising avenues for efficiency enhancement. Furthermore, we highlight the pivotal role of carrier concentration variation in balancing carrier mobility and recombination, enabling fine-tuned control over device performance. Investigating the work function values of back contact metals uncovers crucial insights into open-circuit voltage, short-circuit current, and efficiency. Temperature effects are examined, emphasizing the need for effective thermal management strategies to ensure stable and efficient operation over a wide range of environmental conditions. The study underscores the significance of the HTL in improving charge carrier collection and reducing recombination losses. Lastly, our exploration of cadmium-free design underscores the industry's commitment to sustainable and environmentally friendly photovoltaic technologies. Overall, this simulation study advances our understanding of Sb2Se3-based solar cells and offers valuable guidance for optimizing their performance, ultimately contributing to the development of efficient and eco-friendly renewable energy solutions. Post-optimization, our findings indicate an impressive efficiency of 23.39%, with a noteworthy efficiency level of 23.02% achieved for cadmium-free solar cell configurations.

Dopant Control of Solution-Processed CuI:S for Highly Conductive p-Type Transparent Electrode.

Copper iodide (CuI) has garnered considerable attention as a promising alternative to p-type transparent conducting oxides owing to its low cation vacancy formation energy, shallow acceptor level, and readily modifiable conductivity via doping. Although sulfur (S) doping through liquid iodination has exhibited high efficacy in enhancing the conductivity with record high figure of merit (FOM) of 630 00MΩ-1, solution-processed S-doped CuI (CuI:S) for low-cost large area fabrication has yet to be explored. Here, a highly conducting CuI:S thin-film for p-type transparent conducting electrode (TCE) is reported using low temperature solution-processing with thiourea derivatives. The optimization of thiourea dopant is determined through a comprehensive acid-base study, considering the effects of steric hindrance. The modification of active groups of thioureas facilitated a varying carrier concentration range of 9×1018-2.52×1020cm-3 and conductivities of 4.4-390.7Scm-1. Consequently, N-ethylthiourea-doped CuI:S exhibited a FOM value of 7 600MΩ-1, which is the highest value among solution-processed p-type TCEs to date. Moreover, the formulation of CuI:S solution for highly conductive p-type TCEs can be extended to CuI:S inks, facilitating high-throughput solution-processes such as inkjet printing and spray coating.

Temperature-driven n- to p-type transition of a chemiresistive NiO/CdS-CdO NO2 gas sensor

A new NiO/CdS-CdO composite-based chemiresistive gas sensor for NO2 detection exhibits temperature-driven adsorption switching. In-situ CdS nanoparticle growth on Ni-based metal-organic framework (MOF) spheres produced Ni-MOF/CdS, and then calcinating the Ni-MOF/CdS in air yielded NiO/CdS-CdO composite. The composite's NO2 sensing characteristics were examined at 25–350 °C, demonstrating that the NiO/CdS-CdO composite switches from n- to p-type above 200 °C with strong NO2 sensitivity and selectivity. Adsorption switching allows the NiO/CdS-CdO composite to serve as a dual-mode sensor, where NiO and CdS-CdO dominate at higher temperatures (>200 °C) and lower temperatures (≤200 °C) with realistic detection ability, respectively. This switching is mainly caused by variations in charge carrier concentration and NO2 adsorption/desorption behavior on the composite surface. At 150 °C, NiO/CdS-CdO sensors have a low detection limit of 100 ppb, high response (Rg/Ra, ∼215), quick response time (∼47 s), and recovery time (∼66 s) at 100 ppm. FTIR analysis, estimation of activation energies, and a qualitative comparison of n- to p-type transition with a typical full-wave rectification process explain the adsorption switching phenomenon. Adsorption switching in NiO/CdS-CdO-based gas sensors with great repeatability, stability, and fast response may be a promising route for high-performance gas sensing applications.

Tunable multiband THz perfect absorber due to the strong coupling of distributed Bragg reflector cavity mode and Tamm plasma polaritons modes based on MoS2 and graphene

In this work, we propose a multiband terahertz perfect absorber by combining a distributed Bragg reflector (DBR) cavity with molybdenum disulfide (MoS2) and graphene. The absorption peak comes from the strong coupling of the DBR cavity mode and the two Tamm plasma polaritons (TPPs) modes. Our numerical simulations demonstrate that the degree of coupling in this hybrid system is tunable by adjusting the structural parameters, thereby allowing for control over the position and intensity of the absorption peaks. Furthermore, utilizing the tunable Fermi energy level of graphene and controlled variation of the molybdenum disulfide carrier concentration enables active switching between absorption-free, dual-band, and triple-band absorption. Additionally, the high absorption efficiency in a wide angular range and sensitivity make this device highly versatile. The coupled harmonic oscillator model is used to explain the strong coupling phenomena of the system. This simple layered structure provides a hybrid coupling system with a controlled number of bands suitable for potential active terahertz optoelectronic devices.

Novel composite materials with high near-infrared reflectance properties to retard the thermal aging of polyethylene: Pr3+ and Er3+ doped La2Zr2O7 compounds

In this paper, Er3+ and Pr3+ successfully replaced La3+ in the lattice without changing the structure of La2Zr2O7 pyrochlore, and finally formed the substituted solid solution La2-xMxZr2O7+δ (M = Er, Pr; x = 0–0.25). SEM analysis shows that the pigments were in the shape of nearly spherical particles with a particle size between 10 and 60 nm. La2-xPrxZr2O7+δ and La2-xErxZr2O7 materials have high NIR reflectance properties, with the NIR reflectance of 68.46%–92.51% and 82.79%–90.89%, which are related to the variation of free carrier concentration due to doping content. Compared with pure polyethylene material, the polyethylene plastic samples containing La2-xPrxZr2O7+δ and La2-xErxZr2O7+δ not only had lower internal surface temperatures, 5.9–11.4 °C and 6.9–13.2 °C lower but also had significantly lower thermal aging. In conclusion, the use of synthetic pigments with high NIR reflectivity as additives can delay the thermal aging of plastics and increase the aging resilience of plastic.

Improving the semiconductor performance of SnO2 / CdS / CuBi2O4 by optimizing the optical properties of the CuBi2O4 absorbent layer

In this research, CuBi2O4 is numerically studied as an absorber layer in the SnO2/CdS/CuBi2O4 structure to evaluate and enhance its efficiency. Using the SCAPS-1D program, the CuBi2O4 layer underwent testing with variations in thickness, gap energy (Eg), temperature, and donor charge carrier concentration (Na). The results obtained indicated a significant improvement in the efficiency of this structure, achieving a yield of 32.89% with Voc = 1.302 V, Jsc = 39.556 mA/cm2, and FF = 86.95% when the CuBi2O4 layer was 1.6 μm thickness, Eg = 1.6 eV, and Na = 1019 cm−3 under thermal conditions with temperature greater than 340 K. This efficiency value is higher than the 32.3% reported in the literature.

Atomic-Scale Engineering of Grain Boundary Chemistry and Potential for Li-Garnet Solid-State Electrolytes

With increasing demands to replace flammable liquid electrolytes, solid-state electrolytes have sparked interests both in academic and industrial sectors. In particular, Li-garnet LLZO (Li7La3Zr2O12) exhibits outstanding electrical, chemical, and mechanical properties. Despite the promise, LLZO suffers from the formation of lithium (Li) dendrites at high current operations, thereby limiting the safety and performance of garnet-based solid-state batteries. Li metal nucleation and growth reportedly initiate and grow along the locality of grain boundaries (GBs) in such polycrystalline electrolytes, due either to low ionic or high electronic conductivity of the boundaries. However, limited understanding yet exists on the origins of the local GB conductivity mismatch. The mechanistic understanding should be an important prerequisite to develop engineering strategies of the failing GB interfaces. In this work, we first apply grain boundary core-space charge layer model to understand the basis of Li metal nucleation at GBs. Grain boundary core of LLZO is modeled to have excess negative charge potential, leading to the subsequent Li ionic carrier depletion and electronic carrier accumulation in the adjacent space charge layers. The carrier concentration variations then drive the local electronic conductivity surge and detrimental Li metal nucleation at the GBs. Both electrochemical and microscopic characterization techniques are employed to investigate the atomic-level composition and space charge potential at the GBs. This understanding offers us new strategies for controlling Li nucleation. First, sintering atmosphere is selectively chosen to reduce the potential barrier by suppressing intrinsic defect accumulation at the GB core. Second, an aliovalent dopant, with net-positive charge, is introduced to segregate to GB and mitigate the negative core potential. Both approaches are shown effective in lowering the electronic conductivity and to impede Li metal penetration. We successfully achieve critical current densities (CCD) of ~ 1 mA cm-2,a two-fold increase over prior reports. Our theoretical understanding and the engineering approaches will aid in interpreting the failure origin of the garnet electrolytes, and provide a blueprint on how to engineer GBs for improved safety and performance of all-solid-state Li metal batteries.

Solvent-assisted synthesis of Ag2Se and Ag2S nanoparticles on carbon fabric for enhanced thermoelectric performance

The challenge of developing low-cost, highly flexible, and high-performance thermoelectric (TE) materials persists due to the low thermoelectric efficiency of conducting polymers and the inflexibility of inorganic materials. In this study, we successfully integrated Ag2Se and Ag2S with highly conductive carbon fabric (CF) to produce a flexible thermoelectric material. A facile one-step solvothermal method was employed to synthesize the Ag2Se-CF and Ag2S-CF, which were then subjected to X-ray analysis to confine the phase formation of Ag2Se and Ag2S on the carbon fabric. The analysis revealed that Ag2Se and Ag2S nanoparticles were tightly packed on the surface of carbon fabric, and compositional analysis confirmed the interaction between the material and carbon fabric. The thermoelectric properties of Ag2Se-CF and Ag2S-CF were significantly altered due to carrier concentration and mobility variations, resulting in a low power factor of 6.7 μW/mK2 for Ag2Se-CF and a high-power factor of 24 μW/mK2 at 373 K for Ag2S-CF. The growth of Ag2Se-CF and Ag2S-CF on carbon fabric led to an enhancement in their thermoelectric properties. Further, TE legs were fabricated using the Ag2Se-CF (p-type) and Ag2S-CF (n-type), and the fabricated legs exhibited an output voltage of ∼20 mV to ∼86.65 mV at a temperature gradient (ΔT) of 3–8 K. This work represents a cutting-edge approach to the fabrication of high-performance, wearable thermoelectric devices.

Device Simulation on GaN‐LED Operating in Noncarrier Injection Mode for Performance Improvement by Enhancing the Tunneling Effect in Multiquantum Wells

AbstractNoncarrier injection (NCI) operation mode is an emerging driving mode for nanoscale light‐emitting diodes (LEDs) for application in nanopixel light‐emitting displays. However, the luminescence intensity of the NCI‐LED with traditional epitaxial structure is relatively low because of the absence of external carrier injection. Therefore, improving the luminescence intensity by optimizing the epitaxial structure of the LED is an important technical measure. In this work, the tunneling behavior of the NCI‐LED under reverse bias, which plays a key role in increasing the luminescence intensity, is studied through modeling and simulation. The dynamic variation of carrier concentration in each voltage cycle is studied to explore the working process of the NCI‐LED. Results show that the luminescence output of the NCI‐LED is highly sensitive to doping concentrations, and reducing the number of multiquantum wells can increase the probability of interband tunneling so as to improve dramatically the carrier number contributing to luminescence. This simulation work can deepen the understanding of the NCI mode and serve as an important guidance for the rational design of the NCI‐LEDs.

Analysis of electromechanical couplings and nonlinear carrier transport in flexoelectric semiconductors

In recent years, a linearization method has been extensively employed to investigate the electromechanical fields and carrier distribution in flexoelectric semiconductors, where the assumption of a small perturbation of carrier concentration is adopted. However, this method fails to accurately describe the realistic physical process in which a considerable variation of carrier concentration takes place. Based on fully coupled nonlinear equations, this paper presents a finite element approach to study the electromechanical couplings and nonlinear carrier transport in flexoelectric semiconductors. This method is applied to calculate the electrostatic potential in a bent piezoelectric semiconductive nanowire (NW) going beyond simple considerations and to simulate the nonlinear current–voltage (I–V) characteristics of a mechanically loaded flexoelectric p–n junction. The results indicate that the inherently nonlinear drift of carriers gives rise to the asymmetric distribution of the electric potential relative to the NW axis in the upper body. Flexoelectricity brings about a remarkable enhancement in output voltage and is responsible for the linear variation of electric potential along the length direction of the NW unless close to two ends. Furthermore, the barrier height and I–V relations of a flexoelectric p–n junction can be effectively tuned by mechanical forces due to the flexoelectric effect, the effect of which relies on the size of the p–n junction configuration. This work is a good starting point to comprehend the coupling of flexoelectricity and nonlinear carrier transport in static and dynamic cases, and offers an effective approach to numerically deal with the issues involved in flexoelectronics and piezoelectronics at the nanoscale.

Time dependent 532 nm laser irradiation on quaternary Sb10S15 In15Se60 films: An insight into its structural, morphological, and optical modifications for photonics application

The laser irradiation on films brings many changes in its different properties for optoelectronic applications. The current work deals with the deposition of Sb10S15In15Se60 film by thermal evaporation technique and then laser irradiated at different time durations to study the variation in structural and optical properties. In the present investigation, laser irradiation was carried out by 532 nm laser (2.33 eV) for different time durations, such as 0, 10, 20, 30, and 60 min. Due to the irradiation process, the surface morphology changed while the structure remained polycrystalline in nature by increase in crystallinity with irradiation time. All the optical parameters (linear and nonlinear) were calculated from UV–Vis spectroscopy data. Due to irradiation, the transmission decreased and shift in absorption edge occurred that leads to the reduction in optical gap from 1.73 eV to 1.27 eV. Such photodarkening phenomenon increased the refractive index which led to the increase in nonlinear optical entities like nonlinear refractive index and 3rd order nonlinear susceptibility. The variation of carrier concentration, VELF, and SELF, were also evaluated at different exposure times. The observed changes in the structural and optical properties with laser irradiation are suitable for various photonics devices.

Removal of secondary phases and its effect on the transport behavior of Cu2ZnSn1-xGexS4 kesterite nanoparticles

Hole-transporting materials are very important for achieving high efficiency in perovskite solar cells. Thin films made of Cu2ZnSn1-xGexS4 have attracted the attention of researchers due to their potential as hole-transporting layers. However, defects and impurities define their effectiveness in solar cells. In this work, we present a facile wet chemical approach to remove the ZnS and Cu8GeS6 impurities from small (∼11 nm) Cu2ZnSn1-xGexS4 (x = 0.0 to 0.7) nanoparticles synthesized by a hydrothermal process. The wet chemical process converted the nanostructures Cu-rich Zn-poor from their initial Zn-rich Cu-poor stoichiometry. Moreover, the bandgap energies of the nanostructures were reduced by about 0.1 eV after chemical treatment due to change the oxidation state of Cu from Cu1+ to Cu2+. The kesterite films prepared by spin coating of chemically treated nanoparticle inks revealed enhanced electrical conductivity and hole concentration in comparison to the films prepared using untreated nanoparticle inks. While the highest hole concentration of about 6.52x1018 cm−3 was obtained for the films made of Cu2ZnSn1-xGexS4 nanoparticles with the highest x value (x = 0.7), the highest hole mobility (18.9 cm2V−1s−1) was achieved for x = 0.3. The effects of secondary phase elimination on carrier concentration and mobility variation have been discussed.

Josephson Diode Effect in High-Mobility InSb Nanoflags.

We report nonreciprocal dissipation-less transport in single ballistic InSb nanoflag Josephson junctions. Applying an in-plane magnetic field, we observe an inequality in supercurrent for the two opposite current propagation directions. Thus, these devices can work as Josephson diodes, with dissipation-less current flowing in only one direction. For small fields, the supercurrent asymmetry increases linearly with external field, and then it saturates as the Zeeman energy becomes relevant, before it finally decreases to zero at higher fields. The effect is maximum when the in-plane field is perpendicular to the current vector, which identifies Rashba spin-orbit coupling as the main symmetry-breaking mechanism. While a variation in carrier concentration in these high-quality InSb nanoflags does not significantly influence the supercurrent asymmetry, it is instead strongly suppressed by an increase in temperature. Our experimental findings are consistent with a model for ballistic short junctions and show that the diode effect is intrinsic to this material.

Preferential grain growth, tunable bandgap and topological insulating to bulk state modification induced via Ag ion irradiation in antimony telluride nanostructured thin film

Ion irradiation has been an important technique to alter the physical properties of materials for desired applications. Sb2Te3 thin films deposited via vacuum thermal evaporation procedure are Ag ion irradiated at various fluences. Preferential grain growth along the [104] direction and reduction in optical bandgap from 1.37 eV for unirradiated thin films to 1.14 eV for irradiated thin films is noticed. The value of the Seebeck coefficient decreases with ion fluences 1 × 1010 and 1 × 1012 ions/cm2 owing to the variation in carrier concentration as evident from the Hall measurements. Interestingly, the value of the Seebeck coefficient of the pristine film (457 μV/K at 313 K) is higher than previously reported value in these materials. The study might be catchy to tailor the physical properties of alloys for thermophotovoltaic applications.

Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers

In this paper, we propose a specific two-layer model consisting of a functionally graded (FG) layer and a piezoelectric semiconductor (PS) layer. Based on the macroscopic theory of PS materials, the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are investigated. The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series. Results show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG layer. In addition, by creating jump discontinuities in the material properties of the FG layer, potential barriers/wells can be produced in the middle of the fiber. Similarly, the potential barrier configuration near the interface of a homogeneous PS PN junction can also be manipulated in this way, which offers a new choice for the design of PN junction based devices.

Thermal insulation performance of novel orange fabric coated with Fe3+-doped La2Zr2O7 NIR solar reflectivity pigment

Novel orange thermal insulation coated fabrics were prepared by applying La2Zr2-xFexO7-δ (0.00 ≤ x ≤ 0.25) pigments. The formation of Fe3+-doped La2Zr2O7 pigment was ensured by analyzing XRD and XPS patterns. The pigment samples have near-spherical particles with particle sizes between 30 and 70 nm. The NIR solar reflectance of the pigments is very high, ranging from 75.97 % to 96.18 %, and its change is caused by the variation in free charge carrier concentration. Doping with Fe3+ ions makes the color of the pigment appear orange and reduces the band gap vaule from 5.17 eV to 2.32 eV, mainly attributed to the charge transfer transition of La 5d ↔ Fe 3d. The La2Zr2-xFexO7-δ-coated fabrics exhibit excellent orange color and outstanding NIR solar reflectance (R* = 51.08 % − 64.47 %). Experimental simulations revealed that the designed coated fabrics have lower internal surface temperatures, with a temperature difference of 7.9–14.7 ℃ compared to conventional orange coated fabric, which shows superb thermal insulation performance. The fastness of washing, acids, and alkalis was excellent for fabric. In conclusion, the La2Zr2-xFexO7-δ-coated fabrics can achieve thermal insulation and energy savings by means of NIR solar reflectivity pigments.

Characteristics of 22 nm UTBB-FDSOI technology with an ultra-wide temperature range

The performance of the ultra-thin body and buried oxide fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistors based on a 22 nm technology node is investigated in this paper over an ultra-wide temperature range from 6 K to 550 K. The current–voltage (I–V) characteristics under wide temperature range conditions are shown, including the influence of the back-gate bias (V bg). The important electrical parameters, such as threshold voltage (V t), subthreshold swing, ON-state current (I on), and OFF-state current (I off), are extracted with temperature changes. From 550 K to 6 K, V t increased by 0.21 V, I off decreased nearly six orders of magnitude, and the gate-induced drain leakage current decreased by nearly eight orders of magnitude. The main physical mechanisms for the changing electrical performance with temperature are the variation of carrier concentration, mobility, and energy band. By utilizing a technology computer-aided design simulation, the temperature dependence of the device performance is discussed and analyzed.