Vapor-liquid-solid Research Articles

Solid-Liquid-Solid Growth of Doped Silicon Nanowires for High-Performance Lithium-Ion Battery Anode

Silicon nanowires (SiNWs) have great potential in electronic devices, sensors, energy storage, and conversion devices. Despite various ways to synthesize SiNWs, however, the growth of SiNWs directly from stable, abundant, sustainable silica sources has yet to be achieved. Herein, we report a modified alumino-reduction process of the silica to produce tin (Sn)-doped SiNWs that can be initiated at low temperature (250 °C) based on a solid-liquid-solid growth mechanism in analogy to the well-known vapor-liquid-solid (VLS). In this growth process, the reduced silicon atoms migrate freely in the molten salt and alloy with pre-reduced Sn. The supersaturation of silicon in the Sn-Si alloy leads to the precipitation of single-crystal SiNWs. The prepared SiNWs are of excellent crystallinity and doped with high non-equilibrium concentration (~3.0at.%) of Sn. This process with the solid-liquid-solid mechanism can also be extended to produce other group IV elements-based nanowires such as germanium. In addition, the prepared Sn-doped SiNWs as the anode material in lithium-ion batteries exhibit excellent performance with a high initial Coulombic efficiency of 85.4%, and a substantial reversible capacity of 1133 mAh g-1 even after 500 cycles at 4Ag-1. By utilizing the solid-liquid-solid mechanism, this modified alumino-reduction process offers a novel route for synthesizing doped SiNWs, holding promise for diverse applications.

Epitaxial growth of bottom-crosslinked ZnGa2O4 nanowire arrays on c-plane GaN/Al2O3 substrate

The epitaxial growth of highly ordered ZnGa2O4 nanowire arrays and the construction of connectivity states between the individually segregated nanowires would significantly improve the performance of ZnGa2O4-based devices and expand their application fields. Herein, a strategy to construct high crystalline quality and well-aligned bottom-crosslinked ZnGa2O4 nanowire arrays along seven equivalent crystallographic directions of [111], [111̅], [11̅1], [1̅11], [11̅1̅], [1̅11̅] and [1̅1̅1] on Au-coated (0001) GaN/Al2O3 substrates using chemical vapor deposition (CVD) is proposed. The vapor-liquid-solid (VLS) mechanism dominates the entire growth process. The horizontal nanowires induced to nucleate and grow by catalyst droplets encountered and then turned towards inclined nanowires. Meanwhile, catalyst droplets that failed to move horizontally were enclosed by horizontal nanowires, resulting in the induction of perpendicular nanowire growth. The film-like horizontal nanowires connected all the inclined and perpendicular nanowires to form the bottom-crosslinked nanowire arrays. Additionally, the morphology, structure and optical properties of the ZnGa2O4 nanowire arrays, as well as the influence of Au layer thickness and growth time on the growth of ZnGa2O4 nanowires, were further characterized and thoroughly investigated. The proposed strategy achieved the growth of epitaxial well-aligned ZnGa2O4 nanowire arrays with bottom cross-linking, which is conducive to the application of ZnGa2O4 nanowires in optoelectronics.

Controlled Vapor-Liquid-Solid Growth of Long and Remarkably Thin Pb1-xSnxTe Nanowires with Strain-Tunable Ferroelectric Phase Transition.

The Pb1-xSnxTe family of compounds possess a wide range of intriguing and useful physical properties, including topologically protected surface states, robust ferroelectricity, remarkable thermoelectric properties, and potential topological superconductivity. Compared to bulk crystals, one-dimensional (1D) nanowires (NWs) offer a unique platform to enhance the functional properties and enable new capabilities, e.g., to realize 1D Majorana zero modes for quantum computations. However, it has been challenging to achieve controlled synthesis of ultrathin Pb1-xSnxTe (0 ≤ x ≤ 1) nanowires in the truly 1D region. In this work, we report on a Au-catalyzed vapor-liquid-solid (VLS) growth of remarkably thin (20-30 nm) and sufficiently long (several to tens of micrometers) Pb1-xSnxTe nanowires of high single-crystalline quality in a controlled fashion. This controlled growth was achieved by enhancing the incorporation of Te into the Au catalyst particle to facilitate the precipitation of the Sn/Pb species and suppress the enlargement of the particle, which we identified as a major challenge for the growth of ultrathin nanowires. Our growth strategy can be easily extended to other compound and alloy nanowires, where the constituent elements have different incorporation rates into the catalyst particle. Furthermore, the growth of thin Pb1-xSnxTe nanowires enabled strain-dependent electrical transport measurements, which shows an enhancement of electrical resistance and ferroelectric transition temperature induced by uniaxial tensile strain along the nanowire axial direction, consistent with density functional theory calculations of the structural phase stability.

Monte Carlo simulation study on BaMO3 nanostructures in BMO-doped REBa2Cu3O y thin films prepared by Vapor-Liquid-Solid technique

Abstract In depositing REBa2Cu3O y (REBCO) superconducting thin films, the Vapor-Liquid-Solid (VLS) technique offers advantages over usual pulsed laser deposition (PLD) for achieving high deposition rates and controlled crystal orientation. However, introducing BaMO3 (BMO) additions into REBCO thin films to enhance critical current density in magnetic fields can lead to distinct nanostructures compared to PLD. While simulations have explored nanorod morphologies in PLD. However, a comprehensive understanding of BMO nanostructure self-organization in VLS growth remains elusive. This study presents a novel simulation approach that incorporates the liquid phase as droplets and motion of them within the VLS process. This model successfully reproduces experimental observed BMO nanostructures in VLS growth, providing valuable insights and a practical guideline for tailoring BMO nanostructures using the VLS technique.

Impedance Spectroscopy Study of Charge Transfer in the Bulk and Across the Interface in Networked SnO2/Ga2O3 Core–Shell Nanobelts in Ambient Air

Metal oxide core–shell fibrous nanostructures are promising gas-sensitive materials for the detection of a wide variety of both reducing and oxidizing gases. In these structures, two dissimilar materials with different work functions are brought into contact to form a coaxial heterojunction. The influence of the shell material on the transportation of the electric charge carriers along these structures is still not very well understood. This is due to homo-, hetero- and metal/semiconductor junctions, which make it difficult to investigate the electric charge transfer using direct current methods. However, in order to improve the gas-sensing properties of these complex structures, it is necessary to first establish a good understanding of the electric charge transfer in ambient air. In this article, we present an impedance spectroscopy study of networked SnO2/Ga2O3 core–shell nanobelts in ambient air. Tin dioxide nanobelts were grown directly on interdigitated gold electrodes, using the thermal sublimation method, via the vapor–liquid–solid (VLS) mechanism. Two forms of a gallium oxide shell of varying thickness were prepared via halide vapor-phase epitaxy (HVPE), and the impedance spectra were measured at 189–768 °C. The bulk resistance of the core–shell nanobelts was found to be reduced due to the formation of an electron accumulation layer in the SnO2 core. At temperatures above 530 °C, the thermal reduction of SnO2 and the associated decrease in its work function caused electrons to flow from the accumulation layer into the Ga2O3 shell, which resulted in an increase in bulk resistance. The junction resistance of said core–shell nanostructures was comparable to that of SnO2 nanobelts, as both structures are likely connected through existing SnO2/SnO2 homojunctions comprising thin amorphous layers.

Shape-controlled growth of beta-gallium oxide nanowires and experimental investigation on the origination of electrons

Diameter-controlled growth of monoclinic gallium oxide nanowires was performed by chemical vapor deposition technique. Prior to growth, a thin layer of Au films was fabricated, SEM images indicated that Au could converge nanoparticles to govern the growth of β-Ga2O3 nanowires. The SEM images revealed both diameter and length of β-Ga2O3 nanowires strongly depended on the growth temperature. Nanowires grown at 1100 °C temperature have the minimum diameters and uniform lengths, compared with those grown at 900 °C and 1000 °C. The reasons are that a combination and a competition of vapor-liquid-solid (VLS) and vapor-solid (VS) mechanism occur in the growth process. High temperature would provide enough energy to make Ga and O atoms grow along one-dimensional axial orientation following the VLS mechanism. However, low temperature confines atoms at the nanowires interface and enhance sidewalls coalescence following the VS mechanism. X-ray diffraction (XRD) patterns and refinement indicated that the grown samples were of high crystallinity and had intrinsic oxygen vacancies. Photoluminescence spectra were examined and then followed by Gaussian fitting. Through analysis, the emission peaks were considered to originate from intrinsic oxygen vacancies and Ga-O vacancy pairs, consisting with the XRD refinement results. β-Ga2O3 nanowires was coated on the interdigitated electrode, the response to the ultraviolet light and oxygen was studied.

Novel synthesis of 1-D silicon nanowires grown on pyramidal black silicon substrates and intense visible emission

This work shows a new way to grow 1-D Silicon Nanowires (SiNWs) over pyramidal black silicon used as substrates. These nanostructures are grown by the plasma-assisted vapor–liquid-solid (VLS) as a bottom-up process, using tin thin films as a catalytic metal and dichlorosilane gas as a silicon precursor. SiNWs were obtained with diameters from 300-600 nm and 4–6 µm lengths on the black silicon surface. Due to the pyramid-shaped and porous nature of the black silicon surface, SiNWs form a complex mesh nanostructure. This network has a large surface area and exhibits intense and effective photoluminescence with a peak in the green spectrum, which is attributed to the quantum confinement effect that occurred in small nc-Si embedded inside SiNWs. These structural configurations hold significant promise for applications in optical biosensors, solar cells, and other prospective fields.

Growth of Si-incorporated TiO2 thin films using Vapor–Liquid–Solid (VLS) method for room temperature CO2 sensing

Growth of Si-incorporated TiO2 thin films using Vapor–Liquid–Solid (VLS) method for room temperature CO2 sensing

Controllable synthesize of ZnS/PbS nanostructure and their structural and morphological properties

ZnS is an appealing material with wide potential applications in optoelectronics, sensors, and photocatalysis due to its fascinating properties, low cost, and eco-friendly. In this paper, we report the synthesis of ZnS nanowires and nanorods via a simple thermal-evaporation method using different concentrations of PbS as a dopant. The prepared nanostrutures were investigated in detalis using a scanning electron microscopy (SEM), X-ray diffraction (XRD), and high resolution transmission electron microscopy (HRTEM). The results show that the fabricated ZnS nanowire/nanorod has a wurtzite (hcp) structure. In addition, based on the experimental results, the growth mechanism of the prepared nanostructures is reported. X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray (EDX) mapping analyses confirmed that the ZnS nanorods were stoichiometric without impurities or defects, whereas PbS quantum dots were formed inside the high-quality nanowires. The formation mechanism of ZnS nanowires is discussed based on the vapor–liquid–solid (VLS) growth model. Results demonstrated that thermal evaporation is a simple and effective techniques for producing high-quality heterostructured ZnS nanowires with potential applications in different fields.

3D Shape Reconstruction of Ge Nanowires during Vapor-Liquid-Solid Growth under Modulating Electric Field.

Bottom-up growth offers precise control over the structure and geometry of semiconductor nanowires (NWs), enabling a wide range of possible shapes and seamless heterostructures for applications in nanophotonics and electronics. The most common vapor-liquid-solid (VLS) growth method features a complex interaction between the liquid metal catalyst droplet and the anisotropic structure of the crystalline NW, and the growth is mainly orchestrated by the triple-phase line (TPL). Despite the intrinsic mismatch between the droplet and the NW symmetries, its discussion has been largely avoided because of its complexity, which has led to the situation when multiple observed phenomena such as NW axial asymmetry or the oscillating truncation at the TPL still lack detailed explanation. The introduction of an electric field control of the droplet has opened even more questions, which cannot be answered without properly addressing three-dimensional (3D) structure and morphology of the NW and the droplet. This work describes the details of electric-field-controlled VLS growth of germanium (Ge) NWs using environmental transmission electron microscopy (ETEM). We perform TEM tomography of the droplet-NW system during an unperturbed growth, then track its evolution while modulating the bias potential. Using 3D finite element method (FEM) modeling and crystallographic considerations, we provide a detailed and consistent mechanism for VLS growth, which naturally explains the observed asymmetries and features of a growing NW based on its crystal structure. Our findings provide a solid framework for the fabrication of complex 3D semiconductor nanostructures with ultimate control over their morphology.

(Invited) Phase Engineering for Enhanced Stability of Perovskite Nanowire Optoelectronics

The crystallization of halide perovskites (HPs) into one-dimensional structures has generated considerable research interest for their promising prospects in studying electron transport characteristics and multifunctional nanoscale devices. Various strategies have been developed to achieve in-plane growth of one-dimensional (1D) structures, including epitaxy, capillary-bridge-manipulated graphoepitaxy, and van der Waals epitaxy. Typically, the VLS growth mode, which involves the initial seeding of metallic catalytic nanoparticles to facilitate the process, has realized the out-of-plane and bottom-up synthesis route, opening up a new pathway for the one-dimensional perovskite electronics and optoelectronics.Among many recent advances, Zinc (Zn) has become a significant suppressor of vacancy formation in halide perovskites, establishing its pivotal role in defect engineering for these materials. Herein, we report the Zn-catalyzed vapor-liquid-solid (VLS) route to render black-phase CsPbI3 nanowires operationally stable at room temperature. Based on first-principle calculations, the doped Zn2+ can not only lead to the partial crystal lattice distortion but also reduce the formation energy value from the black phase to the yellow phase, improving the stability of the desired black phase. A series of contrast tests further confirm the stabilization effect of the Zn-doped strategy. Besides, the polarization-sensitive characteristics of black phase CsPbI3 nanowires were revealed. Our work highlights the importance of phase stabilization engineering for CsPbI3 nanowires and their potential applications in anisotropic optoelectronics.

Recent Advances in 1D Nanostructure Assembly and Direct Integration Methods for Device Applications.

In recent years, 1D nanostructure-based devices have achieved widespread usage in various fields, such as sensors, energy harvesters, transistors, and electrodes owing to their exceptional and distinct properties. The pioneering work of Dr. R. S. Wagner at Bell Laboratories in 1964 introduced the vapor-liquid-solid (VLS) process, a powerful synthesis method. Since then, numerous synthesis techniques, including sol-gel, hydrothermal, chemical vapor deposition (CVD), physical vapor deposition (PVD), and more, have been developed. These methods have enabled researchers to effectively control the shape (length and diameter) and material properties of nanowires. However, itwasonly about two decades ago that nanowires started to be widely utilized as key components in functional devices, primarily due to the lack of proper integration methods. Although dozens of integration techniques have been developed, none have emerged as a predominant choice, with each method presenting its own set of advantages and limitations. Therefore, this work aims to categorize these methods based on their working principles and provide a comprehensive summary of their pros and cons. Additionally, state-of-the-art devices that capitalize on the integration of 1D nanomaterials are introduced.

Precise synthesis of In–Bi alloy nanodroplets through controlled surface reactions on a Si(111) surface at ambient temperature

The synthesis of alloy nanocatalysts with controllable sizes and shapes is a critical prerequisite for vapor–liquid–solid (VLS) growth of one-dimensional nanostructures. In this work, we comprehensively examined surface reactions between evaporated In atoms and a Bi thin film on a Si(111) surface at ambient temperature. InBi2 liquid nanodroplets nucleate and grow during initial vapor–solid (VS) reaction between the In vapor and surface Bi atoms, and the reaction proceeds until a saturation point is reached, following which InBi2 begins to catalyze subsequent VLS growth of various nanocrystals under persistent In-beam flux. The scaled size distribution of individual InBi2 nanodroplets could be explained adequately using the classical capillary nucleation theory, which suggests that the simultaneous homogeneous nucleation of InBi2 nanodroplets occurs during the vapor–solid (VS) reaction of In and Bi.

Enhancing PEC hydrogen generation efficiency: Robust ZnO-GaN hierarchical nanowires loaded with NiS for superior charge separation and transportation

We present a method for the sequential fabrication of a three-dimensional hierarchical structure, comprising ZnO nanowires (NWs) grown atop Vapor-Liquid-Solid (VLS) GaN NWs using Metal Organic Chemical Vapor Deposition (MOCVD) for applications in photoelectrochemical water splitting (PEC-WS). To enhance the PEC performance and photostability of the system, we performed NiS anchoring. The optimized 60 NiS/ZnO-GaN hierarchical nanowires (HNWs) exhibited a remarkable 23-fold enhancement (1.62 %) in photoconversion efficiency at 0.75 V vs reversible hydrogen electrode (RHE) compared to GaN NWs passivated with ZnO deposited by atomic layer deposition (ALD) (0.07 %), alongside an 18.9-fold increase in photocurrent density (7.6 mAcm−2 @ 1.23 V vs RHE). Additionally, these hierarchical structures demonstrated exceptional photostability over a period of 10 hours (36000 s) at 0.8 V vs RHE. The hierarchical assembly is crucial in achieving high photoconversion efficiency and photostability. The rational design of hierarchical NW photoanodes synergistically enhances both photocurrent and photostability, paving the way for facile integration of II-VI with III-V materials and potentially unlocking advancements in next-generation energy harvesting and conversion devices.

Protection of Si Nanowires against Aβ Toxicity by the Inhibition of Aβ Aggregation.

Alzheimer's disease (AD) is a progressive neurodegenerative disease characterized by the accumulation of amyloid beta (Aβ) plaques in the brain. Aβ1-42 is the main component of Aβ plaque, which is toxic to neuronal cells. Si nanowires (Si NWs) have the advantages of small particle size, high specific surface area, and good biocompatibility, and have potential application prospects in suppressing Aβ aggregation. In this study, we employed the vapor-liquid-solid (VLS) growth mechanism to grow Si NWs using Au nanoparticles as catalysts in a plasma-enhanced chemical vapor deposition (PECVD) system. Subsequently, these Si NWs were transferred to a phosphoric acid buffer solution (PBS). We found that Si NWs significantly reduced cell death in PC12 cells (rat adrenal pheochromocytoma cells) induced by Aβ1-42 oligomers via double staining with 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) and fluorescein diacetate/propyl iodide (FDA/PI). Most importantly, pre-incubated Si NWs largely prevented Aβ1-42 oligomer-induced PC12 cell death, suggesting that Si NWs exerts an anti-Aβ neuroprotective effect by inhibiting Aβ aggregation. The analysis of Fourier Transform Infrared (FTIR) results demonstrates that Si NWs reduce the toxicity of fibrils and oligomers by intervening in the formation of β-sheet structures, thereby protecting the viability of nerve cells. Our findings suggest that Si NWs may be a potential therapeutic agent for AD by protecting neuronal cells from the toxicity of Aβ1-42.

A novel algorithm for asphaltene precipitation modeling in shale reservoirs with the consideration of capillary pressure during the CCUS processes

Tight and shale reservoirs have markedly expanded their role in global oil and gas production. However, the overall recovery from these reservoirs is suboptimal, leaving much of the shale oil unrecovered. CO2 flooding is a promising enhanced oil recovery (EOR) technique that can improve oil extraction and simultaneously facilitate carbon capture, utilization, and storage (CCUS). However, this method presents challenges, notably the precipitation and deposition of asphaltene, which risks plugging the nanoporous structure characteristic of shale reservoirs. Given that the nanopore sizes in these reservoirs align closely with asphaltene particle dimensions, the risk of pore and throat blockages during gas injection is pronounced. Although various asphaltene precipitation models have been proposed, there is still a lack of robust algorithms accounting for the substantial influence of capillary pressure on asphaltene precipitation in these nanopores. In this study, a novel three-phase vapor–liquid-asphaltene equilibrium calculation algorithm coupled with capillary effect is developed. The algorithm is first validated by comparing with the experimental data of the Px phase diagram and asphaltene precipitation amount. The validated algorithm is then used to conduct example calculations to demonstrate the robustness of the new algorithm and to examine the impact of capillarity on the three-phase vapor–liquid-solid (VLS) equilibria. Computation results show that capillary pressures in nanopores substantially modify the three-phase VLS equilibria, causing shifts in saturation pressure and influencing asphaltene precipitation. Generally, asphaltene precipitation in nanopores occurs at a lower pressure and gas injection concentration. The smaller pore sizes intensify these effects, but the impact diminishes as pressure increases. Additionally, the gas composition also greatly affects asphaltene precipitation. The results reveal that this new algorithm is robust across different conditions, offering an innovative approach that reliably predicts asphaltene precipitation considering the effect of capillary pressures, paving the way for improved EOR and CCUS in shale reservoirs.

Salt-Assisted Vapor-Liquid-Solid Growth of 1D van der Waals Materials.

The method of salt-assisted vapor-liquid-solid (VLS) growth is introduced to synthesize 1D nanostructures of trichalcogenide van der Waals (vdW) materials, exemplified by niobium trisulfide (NbS3). The method uses a unique catalyst consisting of an alloy of Au and an alkali metal halide (NaCl) to enable rapid and directional growth. High yields of two types of NbS3 1D nanostructures, nanowires and nanoribbons, each with sub-ten nanometer diameter, tens of micrometers length, and distinct 1D morphology and growth orientation are demonstrated. Strategies to control the location, size, and morphology of growth, and extend the growth method to synthesize other transition metal trichalcogenides, NbSe3 and TiS3, as nanowires are demonstrated. Finally, the role of the Au-NaCl alloy catalyst in guiding VLS synthesis is described and the growth mechanism based on the relationships measured between structure (growth orientation, morphology, and dimensions) and growth conditions (catalyst volume and growth time) is discussed. These results introduce opportunities to expand the library of emerging 1D vdW materials to make use of their unique properties through controlled growth at nanoscale dimensions.

Circumventing the Uncertainties of the Liquid Phase in the Compositional Control of VLS III-V Ternary Nanowires Based on Group V Intermix.

Control over the composition of III-V ternary nanowires grown by the vapor-liquid-solid (VLS) method is essential for bandgap engineering in such nanomaterials and for the fabrication of functional nanowire heterostructures for a variety of applications. From the fundamental viewpoint, III-V ternary nanowires based on group V intermix (InSbxAs1-x, InPxAs1-x, GaPxAs1-x and many others) present the most difficult case, because the concentrations of highly volatile group V atoms in a catalyst droplet are beyond the detection limit of any characterization technique and therefore principally unknown. Here, we present a model for the vapor-solid distribution of such nanowires, which fully circumvents the uncertainties that remained in the theory so far, and we link the nanowire composition to the well-controlled parameters of vapor. The unknown concentrations of group V atoms in the droplet do not enter the distribution, despite the fact that a growing solid is surrounded by the liquid phase. The model fits satisfactorily the available data on the vapor-solid distributions of VLS InSbxAs1-x, InPxAs1-x and GaPxAs1-x nanowires grown using different catalysts. Even more importantly, it provides a basis for the compositional control of III-V ternary nanowires based on group V intermix, and it can be extended over other material systems where two highly volatile elements enter a ternary solid alloy through a liquid phase.

3D Radial Junctions for Robust and Flexible Optoelectronics

AbstractMarrying nanostructures with thin films is a recent trend in flexible optoelectronics to improve light trapping and mechanical stability. Radial junction (RJ) a‐Si:H thin film optoelectronics, directly deposited upon the vapor‐liquid‐solid (VLS) grown silicon nanowires (SiNWs), can pave the way to achieving excellent flexibility and a high power‐to‐weight ratio (PTWR). Thanks to their vertical‐standing geometry, SiNWs framework can enhance the mechanical stability of RJ units, by keeping the working region far away from the stress‐rich substrate surface. Using low‐melting‐point metals as catalysts, the SiNW array can be fabricated at a low temperature down to 350 °C in a PECVD system, making it possible to directly construct robust RJ units on flexible, low‐cost substrates, such as Al foil. In this review, the recent progress of the flexible RJ a‐Si:H thin film solar cells/photodetectors that are directly fabricated on the surface of low‐cost flexible substrates is reviewed. Moreover, these RJ flexible optoelectronics are demonstrated for use in wearable and real‐time health monitoring, and as cardiac pacemakers for heart stimulation. This RJ technology highlights a promising potential to establish high‐performance, low‐cost, mechanically stable flexible optoelectronic for wearable, portable applications.

Guided CdTe Nanowires Integrated into Fast Near-Infrared Photodetectors.

Infrared photodetectors are essential devices for telecommunication and night vision technologies. Two frequently used materials groups for this technology are III-V and II-VI semiconductors, notably, mercury-cadmium-telluride alloys (MCT). However, growing them usually requires expensive substrates that can only be provided on small scales, and their large-scale production as crystalline nanostructures is challenging. In this paper, we present a two-stage process for creating aligned MCT nanowires (NWs). First, we report the growth of planar CdTe nanowires with controlled orientations on flat and faceted sapphire substrates via the vapor-liquid-solid (VLS) mechanism. We utilize this guided growth approach to parallelly integrate the NWs into fast near-infrared photodetectors with characteristic rise and fall times of ∼100 μs at room temperature. An epitaxial effect of the planar growth and the unique structure of the NWs, including size and composition, are suggested to explain the high performance of the devices. In the second stage, we show that cation exchange with mercury can be applied, resulting in a band gap narrowing of up to 55 meV, corresponding to an exchange of 2% Cd with Hg. This work opens new opportunities for creating small, fast, and sensitive infrared detectors with an engineered band gap operating at room temperature.