Schottky Barrier Diodes (SBDs) are pivotal in modern electronics for their quick switching and low forward voltage drop, enabled by metal-semiconductor junctions. SBDs are renowned for their performance, primarily due to their metal-semiconductor intersection. This study focuses on Cu/V2O5/n-Si and Cu/La-V2O5/n-Si SBDs, examining the impact of lanthanum doping on their performance. Transition Metal Oxides (TMOs) like Vanadium Pentoxide (V2O5) offer unique electronic, magnetic and optical properties making them suitable for various applications. The fabrication process involved sol-gel spin coating and DC magnetron sputtering to create a thin V2O5 layer on n-type silicon wafers, followed by copper contact deposition. Galvanizing temperatures ranged 300° C to 500° C to study the structural, optical, and morphological changes in V2O5 thin films. Key findings include the significant reduction in ideality factor (n) with increasing annealing temperatures for Cu/V2O5/n-Si SBDs, reaching as low n value of 5.26 at 500°C, indicating improved device performances. For Cu/La-V2O5/n-Si SBDs, the ideality factor consistently decreased with higher light intensities, showcasing enhanced performance due to La doping. Barrier height (ɸB) also varied, with higher values observed for La-doped V2O5, enhancing charge recombination and increasing oxygen vacancies. Photodiode parameters were significantly enhanced by doping of the La. The Cu/La-V2O5/n-Si SBDs demonstrated high photosensitivity (PS = 3327.5 %), photo responsivity (R = 33.39 mA/W) and detectivity (D* = 9.82 × 10¹⁰ Jones), making them highly efficient for optoelectronic applications. Overall, this study highlights the potential of Cu/La-V2O5/n-Si SBDs for high-efficiency, optoelectronic applications, with optimized doping concentrations and annealing conditions significantly improving their performance.
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