Values For Transistors Research Articles

Analysis of ATPMOS configurations-based 4 × 1 multiplexer with estimation of power and delay

In this article, two consecutive augmenting transistor P-channel metal oxide semiconductor (ATPMOS) configurations are proposed. These two ATPMOS configurations (ST ATPMOS and DT ATPMOS) are implemented on a 4 × 1 (multiplexer) mux circuit. Leakage power dissipation, dynamic power dissipation and delay performance parameters are calculated for both (ST ATPMOS and DT ATPMOS) ATPMOS configurations-based 4 × 1 mux circuits at different values of transistor’s width. Due to simulation, it is realised that the leakage power dissipation and dynamic power dissipation are reduced and delay is improved (delay is reduced) in the DT ATPMOS configuration-based mux circuit compared to the ST ATPMOS configuration-based mux circuit. The whole simulation process was carried out in 45-nm technology. The circuits were operated at 1-V power supply.

Effects of UV and white light illuminations on photosensing properties of the 6,13-bis(triisopropylsilylethynyl)pentacene thin film transistor

The effects of UV and white light illuminations on the electrical and photosensing properties of the 6,13-bis(triisopropylsilylethynyl)pentacene thin film transistor were investigated. The photosensitivity (Iph/Idark) values of the transistor in the OFF state were found to be 1.156 and 2.12 under UV 365nm (for Vg=−10V) and white light illuminations (for Vg=−10V and P=100mW/cm2), respectively. The threshold voltage value of the TIPS-pentacene transistor was shifted from a smaller (0.215V) value to higher (1.095V) value with UV illumination, while it was shifted from a negative value (−1.29V) to positive value (0.525V) with white light illumination. The mobility μ value (3.412×10−2cm2/Vs) of the TIPS-pentacene transistor under dark is lower than that of the values under UV and white light illuminations. The sub-threshold swing value under dark is higher than that of under UV and white light illuminations. The interface trap density of the TIPS-pentacene transistor is decreased with increasing illumination. The lowest Dit value (0.941×1013eV−1cm−2) of the TIPS-pentacene transistor causes the highest mobility (6.322×10−2cm2/Vs). The photoresponsivity R values of the TIPS-pentacene transistor vary from 11.58mA/W to 53.48mA/W.

Efficient transient analysis of transistor circuits from device fabrication data

Tabulated values of transistor charge-current-voltage characteristics are generated directly from device process parameters An efficient numerical Laplace inversion method is used with a piecewise-linear approximation technique to obtain the time response of the transistor in a given circuit.