Abstract
The effects of UV and white light illuminations on the electrical and photosensing properties of the 6,13-bis(triisopropylsilylethynyl)pentacene thin film transistor were investigated. The photosensitivity (Iph/Idark) values of the transistor in the OFF state were found to be 1.156 and 2.12 under UV 365nm (for Vg=−10V) and white light illuminations (for Vg=−10V and P=100mW/cm2), respectively. The threshold voltage value of the TIPS-pentacene transistor was shifted from a smaller (0.215V) value to higher (1.095V) value with UV illumination, while it was shifted from a negative value (−1.29V) to positive value (0.525V) with white light illumination. The mobility μ value (3.412×10−2cm2/Vs) of the TIPS-pentacene transistor under dark is lower than that of the values under UV and white light illuminations. The sub-threshold swing value under dark is higher than that of under UV and white light illuminations. The interface trap density of the TIPS-pentacene transistor is decreased with increasing illumination. The lowest Dit value (0.941×1013eV−1cm−2) of the TIPS-pentacene transistor causes the highest mobility (6.322×10−2cm2/Vs). The photoresponsivity R values of the TIPS-pentacene transistor vary from 11.58mA/W to 53.48mA/W.
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