Phase composite material is an ultrathin film structure having both crystalline islands and amorphous matrix which exhibit unique carrier conduction properties. Due to the coupling of conduction states between quantum dot like crystalline islands, an isolated conduction band is formed near the mobility edge of the conduction band of amorphous states. Effective mobility of carrier conduction via the mobility edge states are in between the values of single crystal and polycrystalline film. The primary benefit of phase composite material is the process compatibility with silicon process, especially at the back end of line process where the process temperature is limited below 400°C. Since this material state can be easily formed using high pressure atomic layer deposition process at low temperature below 200°C, various semiconductor channel materials can be deposited on arbitrary shaped substrate. Using the process flexibility of this process, nMOS and pMOS can be easily fabricated in planar form or in vertically integrated form. In this talk, various applications of devices fabricate using phase composite semiconductor channel materials will be discussed.
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