Vacuum Ultraviolet Excimer Research Articles

Photochemical removal of acetaldehyde using 172nm vacuum ultraviolet excimer lamp in N2 or air at atmospheric pressure.

The photochemical removal of acetaldehyde was studied in N2 or air (O2 1-20%) at atmospheric pressure using side-on and head-on types of 172nm Xe2 excimer lamps. When CH3CHO was decomposed in N2 using the head-on lamp (HL), CH4, CO, and CO2 were observed as products in FTIR spectra. The initial removal rate of CH3CHO in N2 was ascertained as 0.37min-1. In air (1-20% O2), HCHO, HCOOH, CO, and CO2 were observed as products in FTIR spectra. The removal rate of CH3CHO in air using the side-on lamp (SL) increased from 3.2 to 18.6min-1 with decreasing O2 concentration from 20 to 1%. It also increased from 2.5 to 3.7min-1 with increasing CH3CHO concentration from 150 to 1000ppm at 20% O2. The best energy efficiency of the CH3CHO removal using the SL in a flow system was 2.8g/kWh at 1% O2. Results show that the contribution of O(1D) and O3 is insignificant in the initial decomposition of CH3CHO. It was inferred that CH3CHO is initially decomposed by the O(3P) + CH3CHO reaction at 5-20% O2, whereas the contribution of direct vacuum ultraviolet (VUV) photolysis increases concomitantly with decreasing O2 pressure at < 5% O2. After initial decomposition of CH3CHO, it was oxidized further by reactions of O(3P), OH, and O3 with various intermediates such as HCHO, HCOOH, and CO, leading to CO2 as a final product.

Performance Enhancement of a Dielectric Barrier Discharge Vacuum-Ultraviolet Photon Source Using Short-Pulsed Electrical Excitation

We have studied the electrical and optical characteristics of an air-cooled argon excimer vacuum-ultraviolet lamp ( $\lambda \sim 126$ nm) excited by a dielectric barrier discharge powered by: 1) pulsed or 2) sinusoidal high-voltage drivers from 32 to 100 kHz. Compared to sinusoidal excitation, pulsed excitation gives nearly $\sim 2\times $ higher vacuum-ultraviolet (VUV) output and electrical-to-VUV conversion efficiency at high pressure (800–900 mbar). Visually, the pulse-driven plasma is spatially homogeneous, whereas for sinusoidal excitation the plasma becomes filamentary at higher pressure and/or frequency. Spectral emission is highly monochromatic with most of the output in the desired VUV band ( $\lambda = 115$ –140 nm). With the lamp running at pressure >700 mbar and power loadings >1.6 W/cm3, a sharp spike in VUV output was consistently seen at turn-on. We believe that transient phenomena or favorable initial conditions may be partly responsible for this VUV spike, although the equilibrium VUV output appears to be limited due to thermal dissipation, gas heating, and associated loss of gas from the active region. We propose that we may be observing the same intrinsic VUV spiking phenomena as reported in liquid nitrogen-cooled Xe, Kr, and Ar excimer lamps by Gerasimov et al. More importantly, we believe ours is the first such observation reported for an excimer VUV lamp operating near room temperature. This VUV spiking behavior raises the prospect that designs with improved thermal management may achieve even higher VUV power and efficiency.

Effects of aging on poly(1‐trimethylsilyl‐1‐propyne) membranes irradiated with vacuum ultraviolet radiation for gas separation

ABSTRACTIn this study, we investigated the effects of physical aging on the surface and gas‐transport properties of highly gas permeable poly(1‐trimethylsilyl‐1‐propyne) membranes irradiated with vacuum ultraviolet (VUV) radiation. VUV excimer lamp irradiation was performed on one side of the membrane for 6 or 60 min. The gas permeabilities for carbon dioxide (CO2) and nitrogen (N2) were determined through a volumetric measurement method at 23 °C. The gas permeabilities for CO2 and N2 increased temporarily at 7 days after 6 and 60 min of VUV irradiation of the membranes. The change in the gas permeability for N2 was more remarkable than that for CO2. These changes were related to the CO or SiOx ratio. The CO ratio was related to the gas permeability of the membranes VUV‐irradiated for 6 min, whereas the SiOx ratio was related to the gas permeability of the membranes VUV‐irradiated for 60 min. These changes affected the gas selectivities of the membranes. © 2017 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2018, 135, 45973.

Aptamer-Based Carboxyl-Terminated Nanocrystalline Diamond Sensing Arrays for Adenosine Triphosphate Detection.

Here, we propose simple diamond functionalization by carboxyl termination for adenosine triphosphate (ATP) detection by an aptamer. The high-sensitivity label-free aptamer sensor for ATP detection was fabricated on nanocrystalline diamond (NCD). Carboxyl termination of the NCD surface by vacuum ultraviolet excimer laser and fluorine termination of the background region as a passivated layer were investigated by X-ray photoelectron spectroscopy. Single strand DNA (amide modification) was used as the supporting biomolecule to immobilize into the diamond surface via carboxyl termination and become a double strand with aptamer. ATP detection by aptamer was observed as a 66% fluorescence signal intensity decrease of the hybridization intensity signal. The sensor operation was also investigated by the field-effect characteristics. The shift of the drain current–drain voltage characteristics was used as the indicator for detection of ATP. From the field-effect characteristics, the shift of the drain current–drain voltage was observed in the negative direction. The negative charge direction shows that the aptamer is capable of detecting ATP. The ability of the sensor to detect ATP was investigated by fabricating a field-effect transistor on the modified NCD surface.

Improving vacuum-UV (VUV) photolysis of organic compounds in water with a phosphor converted xenon excimer lamp emitting at 193 nm.

A novel vacuum ultraviolet excimer lamp emitting light at 193 nm was used to investigate the degradation of organic micropollutants in ultrapure water and wastewater treatment plant (WWTP) effluent. Overall, light at 193 nm proved to be efficient to degrade the investigated micropollutants (diclofenac, diatrizoic acid, sulfamethoxazole). Experiments with WWTP effluent proved the ability of radiation at 193 nm to degrade micropollutants which are hardly removed with commonly used oxidation technologies like ozonation (diatrizoic acid, ethylenediaminetetraacetic acid, perfluorooctanoic acid, and perfluorooctanesulfonic acid).

Vacuum ultra-violet emission of plasma discharges with high Xe partial pressure using a cathode protective layer with high secondary electron emission

In this work, the mechanism of the vacuum ultra-violet (VUV) emission of plasma discharges, with high Xe partial pressure and high ion-induced secondary electrons emission protective layer, is studied by measuring the VUV light emission directly and comparing it with two-dimensional simulations. From the panel measurement, we find that the high intensity of excimer VUV mainly contributes to the high luminous efficacy of SrCaO-plasma display panels (PDP) at a low sustain voltage. The unchanged Xe excitation efficiency indicates that the electron temperature is not decreased by the high secondary electrons emission protective layer, even though the sustain voltage is much lower. From the two-dimensional simulations, we can find that the ratio of excimer VUV to resonant VUV, which is determined by the collision rate in the discharge, is only significantly affected by the Xe partial pressure, while it is independent of the sustain voltage and the secondary-electrons-emission capability of protective layer. The unchanged average electron energy at the moment when the electric field becomes maximum confirms that the improvement of the VUV production efficiency mainly is attributed to the increase in electron heating efficiency of a PDP with high ion-induced secondary electrons emission protective layer. Combining the experimental and the simulation results, we conclude about the mechanism by which the VUV production is improved for the plasma display panel with a high Xe partial pressure and a cold cathode with high ion-induced secondary electrons emission.

Impact of Xe partial pressure on the production of excimer vacuum ultraviolet emission for plasma display panels

In this work, the effect of the Xe partial pressure on the excimer vacuum ultraviolet (VUV) emission intensity of the plasma display panels is investigated, both by measuring the spectral emission directly and by two-dimensional simulations. Experimentally, we find that at the high Xe partial pressure levels, there is an supra-linear increase of excimer VUV radiation and that determines the strong increase of luminance at the high pressures and high voltage. Due to the increase of the luminance and the almost unchanged discharge current, the luminous efficacy strongly increases with the Xe partial pressure. In addition, we also investigated the dynamics of the VUV generation, by measuring the decay time of the excimer VUV light as a function of the gas pressure. It is found that the decay time decreases with the increase of gas pressure. The spatial characteristics of the excimer VUV emission are also discussed. Different from the Ne and near-infrared emission, the excimer VUV emission is generated near the surface of the electrodes and increases uniformly on both sides of the anode and cathode (i.e., the bulk plasma region). Most importantly, it is found that the VUV production occurs during the afterglow period, while it is almost zero at the moment of the discharge itself. From the simulations, it can be seen that the Xe2*(3Σu+) excimer species, which are generated from Xe*(1s5), play a dominant role in the excimer VUV emission output at the high Xe partial pressure. The two-dimensional simulations also show that the strong increase of Xe excimer excitation states in the case of high pressure is mainly the result of the high conversion efficiency of the Xe excimer states, especially in the afterglow period. Due to the high conversion efficiency of Xe excitation species to Xe excimer species by the high collision rate in the case of high pressure, there is a strong increase of excimer VUV production, especially from the cathode.

Removal of nitric oxide by activated ammonia generated by vacuum ultraviolet radiation

To broaden and lower the narrow temperature window of the selective non-catalytic reduction (SNCR) of nitric oxide (NO), the use of activated ammonia as the reduction agent was examined. A 172nm VUV (vacuum ultraviolet) excimer lamp was employed as the excitation source for molecular ammonia. Activated ammonia generated by VUV radiation in a photochemical reactor was injected into a model flue gas (NO/O2/N2) at room temperature. The effects of reaction temperatures, oxygen concentrations, and NH3/NO molar ratios (MRs) on NO removal were investigated in a lab-scale plug flow reactor. Temperatures ranged from 500°C to 850°C. A temperature window enlargement of 150°C was achieved at the lower boundary of the temperature window. The results are the first clear observations of low temperature SNCR by activated ammonia. Above 600°C, NO removal was affected by injection of activated ammonia, while around 750°C, conventional SNCR by injection of molecular ammonia was effective. An approximate 80% NO removal was attained at 700°C with an MR=2.0 and 8.3% O2. Although the chemical compositions of activated ammonia remained unknown during the present study, the results suggested that effective chemical species for NO removal such as NH2 and H2 were produced from activated ammonia above 600°C. The number of photons emitted per mole of molecular ammonia, Np, was proposed to evaluate the effects of NH3 concentrations and residence times of NH3 gas in the photochemical reactor. The optimum Np range was found to be the point at which maximum NO removal was attained.

Effects of irradiation with vacuum ultraviolet xenon excimer lamp at 172 nm on water vapor transport through poly(lactic acid) membranes

The diffusivity, solubility, and permeability of water vapor and nitrogen were systematically investigated for Vacuum Ultraviolet (VUV)-irradiated poly(lactic acid) (PLA) membranes by a xenon excimer lamp at 172nm. The photon was completely absorbed in the surface membrane, and the VUV irradiation did not depend on the color center and bulk structure of the PLA membrane. Additionally, surface hydrophilicity increased in the irradiation time range of 0–10min and settled at a steady state in the irradiation time range of 30–100min. We discovered the surface photo-oxidation, scission reaction, and crystallization of PLA membranes by VUV irradiation. The PLA chemical structure changed as chain cleavage and formation of CC double bonds and hydroperoxide OH at newly formed chain terminals through a Norrish II mechanism. The water vapor permeability of VUV-irradiated PLA membrane for 60min was equal to that of unirradiated PLA membranes because the water vapor diffusivity reduction for surface crystallization counteracted the solubility enlargement for surface hydrophilicity. The temperature dependence on water vapor permeability of VUV-irradiated PLA membrane at low relative feed pressure showed that diffusivity-controlled behavior and that, at high relative feed pressure, diffusivity- and solubility-controlled behavior.

Oxide Nanoparticle Thin Films Created Using Molecular Templates

We present a new generic method to synthesize nanostructured metal(II) oxide films on a substrate such as silicon. Vacuum ultraviolet (VUV) excimer lamps rupture metal organic precursors, creating volatile organic fragments, while the metal species at the surface form oxides. X-ray photoemission spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) confirm that 172 nm VUV irradiation of manganese and copper phthalocyanines yields manganese(II) and copper(II) oxides, respectively. The morphology of the precursor film provides a template from which metal oxide nanoparticles are formed, which we demonstrate for particles with dimensions 40 x 40 x 10 nm(3). Our procedure is both simple and flexible, with low thermal budget and potential for patterning.

Chemical grafting of curcumin at polyethylene terephthalate woven fabric surface using a prior surface activation with ultraviolet excimer lamp

AbstractDurable curcumin‐treated antibacterial polyethylene terephthalate (PET) fabrics (against Staphylococcus aureus) were produced by dyeing with curcumin after surface activation using vacuum ultraviolet excimer lamp at 172 nm. Surface change properties of the exposed fabrics were characterized by surface analysis methods such as wettability, atomic force microscopy, and X‐ray photoelectron spectroscopy. Results show an increase in surface hydrophilicity with a water contact angle of the PET fabric reaching 24° after 10 min excimer irradiation, which could be attributed to an increase in carboxyl group formation as confirmed by X‐ray photoelectron spectroscopy measurements. Varying concentrations of curcumin were immobilized onto untreated and vacuum ultraviolet‐irradiated PET samples using diffusion method at 90°C, and the treated fabrics characterized using K/S (color strength) values at 440 nm. K/S values increased when the PET surface was subjected to a prior excimer irradiation, because of grafting of curcumin at the PET surface. Increased excimer irradiation time increased grafting of curcumin because the inner fabric fiber surfaces were also more thoroughly treated. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2011

Interaction of vacuum ultraviolet excimer laser radiation with fused silica. I. Positive ion emission

We report time- and mass-resolved measurements of Si+ and O+ emission from ultraviolet-grade fused silica during exposure to pulsed 157 nm excimer laser radiation at fluences below the threshold for optical breakdown. The emission intensities are increased by treatments that increase the density of surface defects, such as abrasion, and are reduced by treatments that reduce the density of surface defects, such as annealing. Ion emission is a sensitive probe of mechanical damage on silica surfaces. The mean ion kinetic energies are typically several eV: 8–9 eV for Si+ and about 4 eV for O+. Hartree–Fock studies of candidate defect sites suggest that antibonding states excited by 157 nm photons play a critical role in the release of these ions. We propose that positive ion emission from fused silica under these conditions is best explained by a hybrid mechanism involving (a) the excitation of an antibonding chemical state (Menzel–Gomer–Redhead mechanism) and (b) the acceleration of the positive ion by repulsive electrostatic forces due to the photoionization of nearby electron traps.

Interaction of vacuum ultraviolet excimer laser radiation with fused silica. III. Negative ion formation

We report mass- and time-resolved measurements of negative ions produced by exposing fused silica to 157 nm radiation at fluences below the threshold for optical breakdown. The principal observed negative ions are O−, Si−, and SiO−, in order of decreasing intensity. The peak in the negative ion time-of-flight signals occurs after the peak in the positive ion signal and before the peak in the corresponding neutral atom or molecule signal. The negative ion intensities are strong functions of the degree of overlap between the positive ion and neutral atom densities. We propose that O−, Si−, and SiO− are created after the laser pulse, by electron attachment to these neutral particles and that the electrons participating in attachment events are trapped in the electrostatic potential of the positive ions.

Interaction of vacuum ultraviolet excimer laser radiation with fused silica: II. Neutral atom and molecule emission

We report mass-resolved time-of-flight measurements of neutral Si, O, and SiO from ultraviolet-grade fused silica during pulsed 157-nm irradiation at fluences well below the threshold for optical breakdown. Although the emission intensities are strongly affected by thermal treatments that affect the density of strained bonds in the lattice, they are not consistently affected by mechanical treatments that alter the density of point defects, such as polishing and abrasion. We propose that the absorption of single 157 nm photons cleave strained bonds to produce defects that subsequently diffuse to the surface. There they react with dangling bonds to release neutral atoms and molecules. Hartree–Fock calculations on clusters containing these defects support the contention that defect interactions can yield emission. More direct emission by the photoelectronic excitation of antibonding chemical states is also supported.

Study of the first pulse of Ne-Xe-HCl dielectric barrier discharge for the excimer lamp

A global one-dimensional model of a dielectric barrier discharge which includes the sheath region and the positive column was developed. The model was used to study the electrical properties under operating conditions of the vacuum ultraviolet excimer lamp and to understand the basic processes of plasma kinetics. A 0.5cm interelectrode gap distance is filled with a Ne-Xe-HCl mixture. Time variations of the charged particles and excited species in the positive column were described. Then the one-dimensional model was used in the cathode region to illustrate (i) the spatio-temporal behavior of electronic and ionic densities and the electric field, and (ii) the time variation of the voltage, the current, and secondary currents due to ion and photon (λ=172nm) impact on the cathode. It shows a good resolution inside the sheath at high pressure and it correctly predicts the waveform of the discharge behavior. The obtained results have been discussed and analyzed.

Debris Characteristics of a Laser-Plasma Colloidal Target Containing Tin Dioxide Nanoparticles

ebris characteristics and theireduction have been investigated for a laser-produced plasma extreme ultraviolet source by using a colloidal jet/droplet target containing tin dioxide nanoparticles. The amount of deposited debris on a silicon witness plate was determined by totalaser energy irradiated onto the target. Double laser pulse irradiation was not effective for deposited debris reduction. Incontrast, in situ low-temperature heating of the witness plate was effective inreducing the amount of deposited debris. Room-temperature photon processing using an incoherent vacuum ultraviolet excimer lamp at 126 nm deoxidized a deposited tin oxide layer

Basic dyeable polyester: a new approach using a VUV excimer lamp

Surface treatment of polyester fabric was carried out using a vacuum ultraviolet (VUV) excimer lamp. The hydrophilicity of the polyester fabric was significantly improved by surface modification, as indicated by the decrease in wetting time and wicking time. This approach can be used to create added value for polyester fabric, which otherwise suffers from low hydrophilicity. Further changes on irradiation were characterised by atomic force microscopy and the crystallinity and tensile strength of the samples were also tested. Basic dyeability of the microdenier polyester fabric was seen to improve greatly on exposure to the excimer lamp, followed by grafting with acrylic acid. The effects were observed to increase with an increase in irradiation time. The best effect was obtained for irradiation time of 10 min. These enhanced properties were accompanied by an insignificant loss in crystallinity and tensile strength of treated fabrics.

Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp

In this paper, we report the deposition of silicon nitride (SiNx) films for the production of semiconductor devices and flat panel displays, by chemical vapor deposition with vacuum ultraviolet excimer lamps (VUV-CVD) using SiH4 and NH3 as raw materials. An Ar2* excimer lamp (λ=126 nm, hν=9.8 eV) with a high photon energy was used to directly excite and dissociate SiH4 through a photochemical reaction. SiNx films were successfully formed at a low temperature of 100 °C with the Ar2* excimer lamp. Although the Si-rich films were obtained using an Ar2* lamp, they showed a quality almost similar to that of films obtained by conventional plasma-CVD at 400 °C.

UV detection for excimer lamps using CVD diamond in various gaseous atmospheres

The recently emerged high-power vacuum ultraviolet excimer lamps operating at 222, 172 and 126 nm will require robust photodetectors to ensure efficient operation for the photo-processing of materials which is often carried out in various ambient atmospheres. Conventional silicon detectors could not meet the stringent requirements, particularly for the 172 and 126 nm lamps. In this paper, we report an initial study on the use of the thin film CVD diamond device for the excimer VUV detection in air, oxygen or nitrogen. The device in the 3 atmospheres exhibits a low similar dark current around 0.3 nA. Working in air leads to significantly prolonged “turn-off” time due to the increased surface conductivity of the device, caused mainly by moisture penetrating into the surface layer. The moisture penetration is enhanced by the increased surface porosity of diamond due to the strongly oxidizing ozone and active oxygen species formed during 172 nm illumination reacting with non-diamond carbon and amorphous materials within the film. However, the UV detection in different environments can still give similar outputs from the same lamp source, probably due to several counteracting effects. Preliminary results on the UV detection for more energetic 126 nm excimer photons using this diamond device have also been reported.

Nitridation in Photon-Assisted Process Using Argon Excimer Lamp

We attempted silicon nitridation that continuously deposits silicon with monosilane (SiH4) and nitrides the silicon with ammonia (NH3) at a low temperature using a vacuum ultraviolet excimer lamp. We used an argon excimer lamp (λ=126 nm, h ν=9.8 eV) so that SiH4 and NH3 can absorb photons and dissociate. Nitrogen exists only near the film surface at a low temperature, and its concentration increases at a high temperature. This photon-assisted process is very feasible for the nitridation of semiconductor devices and flat panel displays in the near future, because it is a low-temperature and low-damage process.