Vac Sci Technol Research Articles

7345. The importance of free radical recombination reactions in CF 4/O 2 plasma etching of silicon : M Dalvie and K F Jenson, J Vac Sci Technol, A8, 1990, 1648–1653

7345. The importance of free radical recombination reactions in CF 4/O 2 plasma etching of silicon : M Dalvie and K F Jenson, J Vac Sci Technol, A8, 1990, 1648–1653

7190. Surface-defect formation in graphite targets during magnetron sputtering: CW Chen et al, J Vac Sci Technol, A8, 1990, 3157–3162

7190. Surface-defect formation in graphite targets during magnetron sputtering: CW Chen et al, J Vac Sci Technol, A8, 1990, 3157–3162

7493. A study of modified polyimide surfaces as related to adhesion: R Flitsh and D-Y Shih,J Vac Sci Technol, A8, 1990, 2376–2381

7493. A study of modified polyimide surfaces as related to adhesion: R Flitsh and D-Y Shih,J Vac Sci Technol, A8, 1990, 2376–2381

7435. Outgassing mechanism after the current decaying phase in disruptive and normal discharges in a tokamak: N Ogiwara and M Maeno, J Vac Sci Technol, A8, 1990, 3855–3863

7435. Outgassing mechanism after the current decaying phase in disruptive and normal discharges in a tokamak: N Ogiwara and M Maeno, J Vac Sci Technol, A8, 1990, 3855–3863

7298. Elimination of gallium-source related oval defects in molecular-beam epitaxy of GaAs: N Chand,J Vac Sci Technol, B8, 1990,160–162

7298. Elimination of gallium-source related oval defects in molecular-beam epitaxy of GaAs: N Chand,J Vac Sci Technol, B8, 1990,160–162

7585. Epitaxy of III–V diluted magnetic semiconductor materials: H Munekata et al,J Vac Sci Technol,B8, 1990, 176–180

7585. Epitaxy of III–V diluted magnetic semiconductor materials: H Munekata et al,J Vac Sci Technol,B8, 1990, 176–180

7384. Optimization of primary beam conditions for secondary ion mass spectroscopy depth profiling of shallow junctions in silicon using the Perkin-Elmer 6300: J J Lee et al, J Vac Sci Technol, A8, 1990, 2287–2294

7384. Optimization of primary beam conditions for secondary ion mass spectroscopy depth profiling of shallow junctions in silicon using the Perkin-Elmer 6300: J J Lee et al, J Vac Sci Technol, A8, 1990, 2287–2294

7697. Structure determination of metastable cobalt films deposited on GaAs: Y U Idzerda et al,J Vac Sci Technol, A8, 1990, 1572–1576

7697. Structure determination of metastable cobalt films deposited on GaAs: Y U Idzerda et al,J Vac Sci Technol, A8, 1990, 1572–1576

7543. Ion-irradiation-induced suppression of three-dimensional island formation during InAs growth on Si(100): C-H Choi et al,J Vac Sci Technol,A8, 1990, 1587–1592

7543. Ion-irradiation-induced suppression of three-dimensional island formation during InAs growth on Si(100): C-H Choi et al,J Vac Sci Technol,A8, 1990, 1587–1592

7293. Molecular beam epitaxial growth of high-quality GaAs on Si using a high-temperature in situ annealing process : Y C Kao et al,J Vac Sci Technol, B8, 1990, 250–253

7293. Molecular beam epitaxial growth of high-quality GaAs on Si using a high-temperature in situ annealing process : Y C Kao et al,J Vac Sci Technol, B8, 1990, 250–253

7516. Electromigration lifetime and crystal structure of thin aluminum film connectors for microelectronic devices deposited by the ionized cluster beam technique: R E Hummel et al,J Vac Sci Technol, A8, 1990, 1437–1442

7516. Electromigration lifetime and crystal structure of thin aluminum film connectors for microelectronic devices deposited by the ionized cluster beam technique: R E Hummel et al,J Vac Sci Technol, A8, 1990, 1437–1442

7624. Slope control of molybdenum lines etched with reactive ion etching: Y Kuo and J R Crowe, J Vac Sci Technol, A8, 1990, 1529–1532

7624. Slope control of molybdenum lines etched with reactive ion etching: Y Kuo and J R Crowe, J Vac Sci Technol, A8, 1990, 1529–1532

7490. Surface analysis of the adhesion bond between various Cu, Sn, and Fe bronze alloys and rubber: D A Stout and R J Rife,J Vac Sci Technol, A8, 1990, 2407–2411

7490. Surface analysis of the adhesion bond between various Cu, Sn, and Fe bronze alloys and rubber: D A Stout and R J Rife,J Vac Sci Technol, A8, 1990, 2407–2411

7427. An ultrahigh vacuum application of a refrigerator-cooled cryopump: M Kasuya and J Yuyama, J Vac Sci Technol, A8, 1990, 3333–3336

7427. An ultrahigh vacuum application of a refrigerator-cooled cryopump: M Kasuya and J Yuyama, J Vac Sci Technol, A8, 1990, 3333–3336

7471. The effects of biasing and annealing on the optical properties of radio-frequency sputtered VO 2: A Razavi et al,J Vac Sci Technol, A8, 1990, 1391–1394

The dynamic characteristics of one blade, two discs and one shrouded, bladed disc, having 87 blades, are predicted by the application of the finite element method of analysis. The discs are modelled by using both annular and sector elements. The blades are modelled by means of shell elements. The shrouds are represented by both lumped masses and straight beam elements. The predicted frequencies are compared with experimental results.

7185. Simulation and measurement of density variation in Mo films sputter deposited over oxide steps: RN Tait et al, J Vac Sci Technol, A8, 1990, 1593–1596

7185. Simulation and measurement of density variation in Mo films sputter deposited over oxide steps: RN Tait et al, J Vac Sci Technol, A8, 1990, 1593–1596

7673. Interesting aspects of reflection high-energy electron diffraction oscillations during growth of GaAs(100): K D Jamison et al,J Vac Sci Technol, B8, 1990, 279–282

7673. Interesting aspects of reflection high-energy electron diffraction oscillations during growth of GaAs(100): K D Jamison et al,J Vac Sci Technol, B8, 1990, 279–282

7446. e--beam deposition of tetragonal ZrO 2 films stabilized with alumina and scandia : S B Qadri et al, J Vac Sci Technol, A8, 1990, 2344–2346

7446. e--beam deposition of tetragonal ZrO 2 films stabilized with alumina and scandia : S B Qadri et al, J Vac Sci Technol, A8, 1990, 2344–2346

7210. Microstructural variations in aluminum oxide coatings deposited using a dual beam ion system: J K G Panitz et al,J Vac Sci Technol, A8, 1990, 1313–1317

7210. Microstructural variations in aluminum oxide coatings deposited using a dual beam ion system: J K G Panitz et al,J Vac Sci Technol, A8, 1990, 1313–1317

7344. Dry etching of TiN/Al(Cu)/Si for very large scale integrated local interconnections: C-K Hu et al, J Vac Sci Technol, A8, 1990, 1498–1502

7344. Dry etching of TiN/Al(Cu)/Si for very large scale integrated local interconnections: C-K Hu et al, J Vac Sci Technol, A8, 1990, 1498–1502