Thin uranium films were deposited on Si (111)—7×7 surface by e-beam evaporation. The surface and interface of U/Si (111) with different annealing temperatures were studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), reflection high energy electron diffraction (RHEED) and photoemission spectroscopy. The formation of 2D uranium silicide (USi1.67) film was confirmed by the presence of a sharp 1×1 LEED pattern, and the surface morphology of this phase displays triangular layered structures. A new superstructure was found for the U–Si system when annealing the interface at 1000K. Further annealing of the interface leads to the appearance of large area of Si (111)—7×7 reconstruction surface with high islands on it.
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