Upset Tests Research Articles

Testing the Feasibility of Selected, Commercially Available Wearable Devices in Detecting Agricultural-Related Incidents

HighlightsThe purpose of this research was to validate a test procedure for using commercially available smart technologies in detecting an agricultural-related incident.A convenient selection of commercially available wearable devices was used to measure the inertial qualities of simulated incidents.Simulated ejections, falls, and upsets were performed to recreate leading causes of agricultural injuries and fatalities using an anthropomorphic test device.Only 2 of 27 simulated incidents triggered detection on the selected wearable devices tested.The results of this study were inconclusive in determining the feasibility of commercially available wearable devices in detecting agricultural-related incidents. More research is needed to develop an improved testing procedure.Additional collaboration is needed with manufacturers of wearable incident detection devices to clearly identify potential applications and limitations of their devices.Abstract. A study was conducted to test a selection of commercially available wearable devices to determine their feasibility for triggering incident detection during a variety of simulated agricultural incidents with high risk of causing injury. The goal was to ultimately increase survivability outcomes for victims by enhancing notification and reducing response time from emergency services. A 50th percentile adult male anthropomorphic test device (ATD). was fitted with a convenient selection of commercially available wearable smart technologies to measure the responsiveness of the technology’s incident detection software. Devices used for this testing were: (1) Garmin Vivoactive 4 smartwatch; (2) Apple Watch Series 7 (Bluetooth only and cellular models); and (3) Movesense Active tracking device. A Samsung Galaxy S22 smartphone and an Apple iPhone 12 smartphone were used to connect the wearable devices and measured impact through their internal inertial measurement unit (IMU) sensors. Simulated ejections from equipment, vertical falls, and vehicle overturns were performed with the ATD. Side upsets were simulated with the ATD positioned in the operator station of a 52-drawbar horsepower (dbp), two-wheel drive, standard front axle, diesel tractor, weighing 6500 pounds. The tractor was equipped with an approved ROPS. Side upsets were also simulated using a 22-horsepower zero-turn mower, with the ATD positioned in the operator seat. Falls were simulated from heights of up to 4.57 meters. After each simulated incident, devices were examined to determine whether or not incident detection was successfully triggered. Data was then collected from an internal sensor logging application installed on the selected devices. It was found that the incident detection feature on the identified wearable devices only triggered in specific scenarios. Only 2 of the 27 simulated incidents successfully triggered incident detection on one device. Only the Garmin Vivoactive 4 smartwatch triggered incident detection. No device was triggered during the ATD impact in simulated tractor upset testing or in simulated zero-turn mower upset testing. It was concluded that these devices, in their current form, are not reliable for use in detecting serious agricultural-related injuries, especially considering the lack of adequate cell phone coverage in the areas in which these incidents are most likely to occur. Keywords: Agricultural incident simulation, ATD, G-force, Incident detection, Sensor fusion, Smart watch.

Bit upset and performance degradation of NAND flash memory induced by total ionizing dose effects

In order to develop the shift model of threshold voltage distribution of the memory array in a radiation environment based on the bit upset test results of NAND Flash and study the coupling effect caused by the simultaneous performance degradation of NAND Flash fundamental modules, the experimental research on the total dose effect of two types of SLC NAND Flash memories, with a feature size of 25 nm and storage capacities of 8 and 32 Gb, respectively, was carried out. When irradiated, the partial memory array and peripheral circuit were shielded. An analytical shift model of threshold voltage distribution was developed. The model parameters are extracted from the experimental data of the 32 Gb devices, and the model and the data were in good agreement. The normalized threshold voltage distributions of the memory array at different total doses were obtained through this model, which showed the changing process of the threshold voltage distribution of the memory array more intuitively and quantitatively. The experimental results also show that the reduced voltage applied to the word line of the memory array generated by the charge pump is the cause of the performance degradation of NAND Flash. The factors that reduce the output voltage of the charge pump are the leakage current of the charge pump itself, the global leakage, the local leakage, and their coupling. Reducing the leakage of NAND Flash peripheral circuits, improving the driver of the charge pumps, and designing a data refresh strategy according to the estimation of the bit upset ratio will help improve the data retention capability in the radiation environment.

Laser Induced Single Event Upset (SEU) Testing of Commercial Memory Devices with Embedded Error Correction Codes (ECC)

Results of laser-induced single event upset testing of devices with embedded error correction codes are described. Specifically, the memory system, consisting of a Micron MT41K256M16TW-107 IT: P 32 Meg×16×8 banks Dual Dynamic Random Access Memories (DDRs) was tested on a self-made test board. Two samples of each memory system or device type were irradiated with a pulsed laser. The units were irradiated by using a continual read/write correct loop in several bit patterns. Results for both correctable and uncorrectable errors are presented along with soft error data records.

A radiation tolerant clock generator for the CMS endcap timing layer readout chip

We present the test results of a low jitter Phase Locked Loop (PLL) prototype chip for the CMS Endcap Timing Layer readout chip (ETROC). This chip is based on the improved version of a clock synthesis circuit named ljCDR from the Low Power Gigabit Transceiver (lpGBT) project. The ljCDR is tested in its PLL mode. An automatic frequency calibration (AFC) block with the Triple Modular Redundancy (TMR) register is developed for the LC-oscillator calibration. The chip was manufactured in a 65 nm CMOS process with 10 metal layers. The chip has been extensively tested, including Total Ionizing Dose (TID) testing up to 300 Mrad and Single Event Upset (SEU) testing with heavy ions possessing a Linear Energy Transfer (LET) from 1.3 to 62.5 MeV × cm2/mg.

Mechanical Properties of Titanium Alloys at Operating and Pressure Shaping Temperatures Depending on the Aluminum and Molybdenum Equivalents

The mechanical properties of different classes of titanium alloys have been compared during tensile tests and upset tests in the temperature range of 20-1200 °C. It has been established that at temperatures of 20–500 °C, the maximum strength is observed for the α+β-transition alloys, and at 600–800 °C – for heat-resistant near α-and α+β-alloys. At temperatures exceeding 900 °C and up to the polymorphic transformation point, the softening of titanium alloys is mainly defined by the content of α-stabilizers and neutral hardeners. At temperatures above the polymorphic transformation point, the tensile strength does not depend on the aluminum and molybdenum equivalents.

Carbon Nanotubes for Radiation-Tolerant Electronics.

Electronics for space applications have stringent requirements on both performance and radiation tolerance. The constant exposure to cosmic radiation damages and eventually destroys electronics, limiting the lifespan of all space-bound missions. Thus, as space missions grow increasingly ambitious in distance away from Earth, and therefore time in space, the electronics driving them must likewise grow increasingly radiation-tolerant. In this work, we show how carbon nanotube (CNT) field-effect transistors (CNFETs), a leading candidate for energy-efficient electronics, can be strategically engineered to simultaneously realize a robust radiation-tolerant technology. We demonstrate radiation-tolerant CNFETs by leveraging both extrinsic CNFET benefits owing to CNFET device geometries enabled by their low-temperature fabrication, as well as intrinsic CNFET benefits owing to CNTs' inherent material properties. By performing a comprehensive study and optimization of CNFET device geometries, we demonstrate record CNFET total ionizing dose (TID) tolerance (above 10 Mrad(Si)) and show transient upset testing on complementary metal-oxide-semiconductor (CMOS) CNFET-based 6T SRAM memories via X-ray prompt dose testing (threshold dose rate = 1.3 × 1010 rad(Si)/s). Taken together, this work demonstrates CNFETs' potential as a technology for next-generation space applications.

Structural Investigation of Delicate-Geometry Fused Deposition Modeling Additive Manufacturing Scaffolds: Experiment and Analytics

Additive manufacturing is a rapidly expanding technology in many scientific fields like tissue engineering. One of the most essential duties of tissue engineering scaffolds is to provide sufficient mechanical strength for the injured bone tissue. Scaffold architecture plays a significant role in its mechanical properties. Here, six delicate different geometry computer-aided design models with identical porosity were designed. The sets of 0/90, 0/45/135/90, 0/60/120, and their shifted models as the most prevalent scaffold geometries were fabricated by fused deposition modeling printer through the optimized processing parameters and were investigated by the upset test. Their modified models according to printing procedure changes were redesigned, and finite element analysis (FEA) simulations were accomplished through a simplifying strategy. Mechanical performances of the designed scaffolds were evaluated, and a good agreement was observed between the FEA and experiments. The strongest patterns were derived via evaluation of three aspects of scaffold elastic modulus, scaffold yield strength, and a newly defined parameter named “scaffold geometry rupture resistance factor”. The large difference between Young's modulus of 0/90 (230.44 MPa) and 0/90 shifted (156.56 MPa) indicated the role of scaffold geometry in mechanical properties. The mechanical effect of layer pattern sequence change was also investigated.

Experimental Investigation of Rotating Detonation Rocket Engines for Space Propulsion

The performance (specific impulse, ) of a modular, -class rotating detonation rocket engine (RDRE) was measured with three gaseous fuels (methane, ethane, and ethylene) and gaseous oxygen over a wide range of flow rates and equivalence ratios. All tests exhausted to sea level backpressure and were conducted using a calibrated thrust stand and Coriolis mass flow meters. Configurations tested included a straight, open annulus, as well as several converging/diverging annular nozzles. Throughout testing, wave numbers observed via high-speed video varied from 5 to 8 waves, whereas wave speeds varied from 60 to 72% of ideal Chapman–Jouguet velocities. Measured performance ranged from 68 to 85% of ideal liquid rocket engine (deflagration engine) sea-level performance, based on comparisons to ideal NASA Chemical Equilibrium with Applications performance estimates. Additionally, an altitude compensating aerospike nozzle increased performance by 10–13%. Several constricting annular exits were also tested, and yielded increased with decreasing flow area. Direct detonation upset tests revealed remarkable combustion stability, and extended pulse-mode firings demonstrated the potential for RDREs as attitude control thrusters.

Research on Structural Design of Friction Test Based on Finite Element Analysis Heory

The thesis uses the ring upsetting method to study the determination of the friction coefficient in volume forming. Use finite element analysis to determine a set of friction coefficient calibration curves, and use the ring upset test to determine the percentage change rate of the ring inner diameter. The relationship curve between the ratio and the compression percentage of the ring height. By comparing the curves, the friction coefficient between the mold material and the forming material is obtained. The friction coefficient between the 6A02CZ material and the steel was determined when the 6A02CZ material was volume shaped in the steel mold. The friction coefficients of the 6A02CS material in the absence of lubricants and lubricants were 0.325 and 0.3, respectively. Studies have shown that the method of combining the finite element method and the ring upsetting test is more suitable for the finite element analysis in plastic volume forming.

Investigation of Buried-Well Potential Perturbation Effects on SEU in SOI DICE-Based Flip-Flop Under Proton Irradiation

The effects of buried-well potential perturbation under the buried-oxide (BOX) layer are studied in both a heavy-ion single event upset (SEU) test and a high-energy proton-SEU test of a silicon-on-insulator (SOI) dual interlocked storage cell (DICE)-based flip-flop. Their dependence on incident angle and back bias is discussed. We fabricated both DICE-based flip-flop and conventional flip-flop, which are designed as 80 000-stage shift-register chains. In a heavy-ion test, a considerable number of SEUs were observed at back bias exceeding 2.4 V, and a ten-times larger SEU-cross section was finally recorded at back bias of 3.0 V compared with the total active area of a DICE-based flip-flop cell. This marks the first case where DICE topology was found to be broken by buried-well potential perturbation on an SOI DICE-based flip-flop. In a proton test, one error was observed at back bias of 2.0 V. The SEU rate in the Van Allen belt at an altitude of 2300 km and an inclination of 90° was estimated as being once every 5 years.

Researching structure heterogeneity of VT41 titanium alloy billet after thermomechanical treatment

The heterogeneity of the titanium VT41 structural state after hot upset test was investigated by analytical methods of optical and scanning microscopy. Vickers microhardness measurements were performed to estimate the mechanical properties. The analysis of the distribution of deformation and the features of the formation of the structural components of the specimen. Globular grains were deformed by the mechanism of intergranular slipping. β-grains and α-plates made the greatest contribution to plastic deformation. Lamellar grains of α-phase in the zone of localization of deformation undergo recrystallization. The dimensions of the zone in which the recrystallization occurred, coincide with the zone of localization of the deformation, estimated by macrostructure. When tempering the billet, the β-phase in the center of the sample breaks down into α-plates, and in the near-surface areas into smaller grains, probably representing needle-like β-titanium martensite. A decrease in microhardness in the central regions may be due both to recrystallization and to the fact that martensite has been quenched in the surface layers.

Single Event Upset tests and failure rate estimation for a front-end ASIC adopted in high-flux-particle therapy applications

A 64 channels Application Specific Integrated Circuit, named TERA09, designed in a 0.35 μm technology for particle therapy applications, has been characterized for Single Event Upset probability. TERA09 is a current-to-frequency converter that offers a wide input range, extending from few nA to hundreds of μA, with linearity deviations in the order of a few percent. This device operates as front-end readout electronics for parallel plate ionization chambers adopted in clinical applications. This chip is going to be located beside the monitor chamber, thus not directly exposed to the particle beam. For this reason, no radiation hardening techniques were adopted during the microelectronics design. The intent of the test reported in this paper is to predict the TERA09 upset rate probability in a real application scenario. Due to the fact that TERA09 has an extended digital area with registers and counters, it is interesting to estimate the effect of the secondary neutron field produced during the treatment. The radiation damage test took place at the SIRAD facility of the Italian National Institute for Nuclear Physics in Padova, Italy. The SIRAD facility allows to study the CMOS upset rate as a function of the energy deposited during irradiation. By irradiating the chip with ions of different Linear Energy Transfer, it is possible to calculate the single event effect cross-section as a function of the deposited energy. It resulted that the minimum deposited energy in a CMOS silicon sensitive volume of 1μm3, responsible for a Single Event Upset probability higher than zero, is 690 keV. In the last part of the paper, we calculated the expected upset probability in a typical clinical environment, knowing the fluence of secondary, backward-emitted neutrons. Considering as an example a treatment room located at the CNAO particle therapy center in Pavia, the expected upset rate for TERA09 is ∼102 events/year. Using a redundant and independent monitor chamber, the upset probability expected during one detector readout is lower than 10−24, as explained in the document.

Investigations on Characterization and Properties of Al-MoO3 Composites Synthesized Using Powder Metallurgy Technique

In this work, Powder Metallurgy (PM) technique was used to synthesize Aluminium based metal matrix composites with various weight percentages (0, 5, 10 & 15) of Molybdenum trioxide (MoO3) as reinforcement. The green cylindrical compacts were produced using a hydraulic press, sintered at 600 ∘C for a period of 3 hours, furnace cooled and machined to obtain samples with aspect ratio of 0.5. Scanning Electron Microscope (SEM) analysis was conducted to study the morphology of the sintered composites. X-Ray Diffraction (XRD) analysis was used to study the presence of MoO3 in Aluminium matrix. The cold upset tests were carried out in steps of 10 KN to study the strain hardening index and strength coefficient of the composites. The effect of MoO3 addition on the density, hardness, thermal conductivity and strength coefficient were analyzed and the results show that the increase in weight percentage of MoO3 content in the Al matrix increases the strength coefficient and hardness of the composite and decreases the strain hardening index and thermal conductivity.

Synthesis, characterization and forming behavior of hybrid copper matrix composites produced using powder metallurgy

AbstractHybrid copper matrix composites containing 5 wt.% of titanium dioxide and varying graphite content (0 wt.%, 2 wt.% and 4 wt.%) were synthesized using powder metallurgy. Metallurgical studies were carried out to examine the presence and distribution of reinforcements in the copper matrix. To investigate the forming behavior of the sintered composite preforms, cold upset tests were conducted from which the true axial stress, the true hoop stress, the true hydrostatic stress and the true effective stress were evaluated and their relationship with the true axial strain was analyzed and presented. It is observed that the increase in addition of weight percentage of graphite into the copper matrix increases the true axial, the true hoop, the true hydrostatic and the true effective stresses. The variation of hardness, strength coefficient and strain hardening with respect to the addition of graphite content is also evaluated and reported.

Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell**Project supported by the National Natural Science Foundation of China (Grant Nos. 11690041 and 11675233).

This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset (SEU) test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders.

First Line Androgen Deprivation Therapy Duration Is Associated with the Efficacy of Abiraterone Acetate Treated Metastatic Castration-Resistant Prostate Cancer after Docetaxel.

Introduction: We performed a chart review study in our castration-resistant prostate cancer (CRPC) patients who received Abiraterone acetate (AA) treatment after docetaxel and identified clinical markers which can predict treatment outcome.Materials and Methods: From 2012 to 2016, 64 patients who received docetaxel after CRPC followed by AA treatment were included. Clinical parameters were recorded and analysis was performed to identify associations between pre-treatment variables and treatment outcome.Results: Thirty three patients (51.6%) achieved a decrease in PSA of 50%. The median PSA progression-free survival and overall survival in the total cohort of 64 patients were 6.6 and 24 months, respectively. Adverse events (AEs) in all grades developed in 35.9% (23/64) patients and mostly were grade 1 or 2. The most common AEs were gastric upset, hypokalemia and elevated liver function tests. Of the eight variables analyzed, first line androgen deprivation therapy (ADT) duration showed positive association to progression free survival (HR 0.98, 95% CI [0.96–0.99], p = 0.012) and overall survival (HR 0.97, 95% CI [0.94–0.99], p = 0.019). Pre-AA PSA and PSA progression ratio showed negative association only to progression free survival (HR 1.0, 95% CI [1.000–1.002], p = 0.025, HR 1.01, 95% CI [1.00–1.01], p < 0.001, respectively).Conclusion: First line ADT duration was positively associated with AA treatment efficacy in progression free survival and overall survival. It can be used as a pre-treatment predictor.

Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity

In this work, a comparison has been made between a low noise ring-oscillator and an LC-oscillator Phase Locked Loop (PLL). An ASIC has been developed to conduct irradiation experiments targeting high-energy physics applications. Two different samples were irradiated up to a total ionizing dose (TID) in SiO2 of 200 Mrad and 600 Mrad with a 100°C thermal annealing step. Single-Event Upset (SEU) tests were performed with heavy ions with LETs (Linear Energy Transfer) between 3.2 and 69.2 MeV.cm2/mg. A Two-photon absorption (TPA) laser facility has been used to provide detailed results on the SEU sensitivity. Both independent PLLs have identical loop dynamics to allow a fair comparison including a Triple-Modular Redundant (TMR) divider and TMR phase detector. Furthermore these circuits consume the same amount of power. The PLLs were processed in a commercial 65 nm CMOS technology.

NI Based System for Seu Testing of Memory Chips for Avionics

This paper presents the results of implementation of National Instrument based system for Single Event Upset testing of memory chips into neutron generator experimental facility, which used for SEU tests for avionics purposes. Basic SEU testing algorithm with error correction and constant errors detection is presented. The issues of radiation shielding of NI based system are discussed and solved. The examples of experimental results show the applicability of the presented system for SEU memory testing under neutrons influence.

Synthesis and forming characteristics of Al–TiO2 powder metallurgy composites during cold upsetting under plane stress state conditions

Aluminum-based metal matrix composites with various weight percentages of TiO2 reinforcement were synthesized by powder metallurgy technique and their forming characteristics were completely studied during cold upsetting under plane stress state conditions. The milled powders were characterized by scanning electron microscope, X-ray diffraction (XRD), and energy dispersive analysis using X-ray (EDAX) analysis. Green cylindrical compacts were made using a 400 kN hydraulic press using suitable punch and die, sintered at (590 ± 10)℃ for a period of 3 h, furnace cooled, and machined to obtain samples with 0.5 aspect ratio. The cold upset tests were carried out in steps of 10 kN and the true axial stress (σ z), the true hoop stress (σθ), the true hydrostatic stress (σ m), and the true effective stresses (σeff) were determined, and their behavior against the true axial strain (ɛ z) was thoroughly analyzed. It was observed that, the addition of TiO2 to the Al matrix material increases the strength coefficient ( K) and decreases the strain hardening index ( n). The decrease in densification and deformation characteristics was observed for the addition of more weight percentages of TiO2. The microstructure analysis was done for the cold upset samples and reported.

The Susceptibility of &lt;formula formulatype="inline"&gt; &lt;tex Notation="TeX"&gt;${\hbox {TaO}}_{\rm x}$&lt;/tex&gt;&lt;/formula&gt;-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose

This paper investigates the effects of high dose rate ionizing radiation and total ionizing dose (TID) on tantalum oxide (TaOx) memristors. Transient data were obtained during the pulsed exposures for dose rates ranging from approximately 5.0 ×107 rad(Si)/s to 4.7 ×108 rad(Si)/s and for pulse widths ranging from 50 ns to 50 μs. The cumulative dose in these tests did not appear to impact the observed dose rate response. Static dose rate upset tests were also performed at a dose rate of ~3.0 ×108 rad(Si)/s. This is the first dose rate study on any type of memristive memory technology. In addition to assessing the tolerance of TaOx memristors to high dose rate ionizing radiation, we also evaluated their susceptibility to TID. The data indicate that it is possible for the devices to switch from a high resistance off-state to a low resistance on-state in both dose rate and TID environments. The observed radiation-induced switching is dependent on the irradiation conditions and bias configuration. Furthermore, the dose rate or ionizing dose level at which a device switches resistance states varies from device to device; the enhanced susceptibility observed in some devices is still under investigation. As a result, numerical simulations aremore » used to qualitatively capture the observed transient radiation response and provide insight into the physics of the induced current/voltages.« less