Ultrathin Si Solar Cells Research Articles

Upright Pyramid Surface Textures for Light Trapping and MoOx Layer in Ultrathin Crystalline Silicon Solar Cells

In this work, ray tracing is used to investigate the optical characteristics of various surface structures in ultrathin crystalline silicon (c-Si) for solar cells. Ultrathin c-Si with a thickness of 20 μm is used as the substrate. The light trapping includes front upright pyramids with a molybdenum oxides (MoOx) anti-reflection (AR) layer. Planar ultrathin c-Si (without a MoOx AR layer and upright pyramids) is used as a reference. The wafer ray tracer was developed by a photovoltaic (PV) lighthouse to model the MoOx AR layer to reduce the front surface reflectance and impacts of the AR layer on ultrathin Si solar cells. The optical properties are calculated on the AM1.5 global solar energy spectrum across the 200–1200 nm wavelength region. From the absorbance profile, the photogenerated current density (Jph) in the substrate is also calculated with various surface structures. The front upright pyramids with the MoOx layer result in the largest absorbance enhancement due to the enhanced light scattering by the pyramids and MoOx AR layer. The Jph of 37.41 mA/cm2 is improved when compared to the planar ultrathin c-Si reference. This study is significant as it illustrates the potential of ultrathin c-Si as a promising PV module technology in the future.

Innovative Strategies for Photons Management on Ultrathin Silicon Solar Cells.

Silicon (Si), the eighth most common element in the known universe by mass and widely applied in the industry of electronics chips and solar cells, rarely emerges as a pure element in the Earth's crust. Optimizing its manufacturing can be crucial in the global challenge of reducing the cost of renewable energy modules and implementing sustainable development goals in the future. In the industry of solar cells, this challenge is stimulating studies of ultrathin Si-based architectures, which are rapidly attracting broad attention. Ultrathin solar cells require up to two orders of magnitude less Si than conventional solar cells, and owning to a flexible nature, they are opening applications in different industries that conventional cells do not yet serve. Despite these attractive factors, a difficulty in ultrathin Si solar cells is overcoming the weak light absorption at near-infrared wavelengths. The primary goal in addressing this problem is scaling up cost-effective and innovative textures for anti-reflection and light-trapping with shallower depth junctions, which can offer similar performances to traditional thick modules. This review provides an overview of this area of research, discussing this field both as science and engineering and highlighting present progress and futureoutlooks.

Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu2SnS3 Thin Film toward High Efficiency

An ultrathin 15 μm wafer‐based c‐Si solar cell is designed and simulated, wherein the current remedy is done by Cu2SnS3 (CTS) thin film. The ZnSe and AlSb are incorporated as window and back surface field (BSF) layers, respectively, in this model. The ultrathin Si‐based n‐ZnSe/p‐Si exhibits the short‐circuit current density of 30.66 mA cm−2 with an efficiency of 18.80%. The inclusion of p+‐CTS thin film as a second absorber layer has enhanced this current to 42.14 mA cm−2. By absorbing sunlight up to 1200 nm, the CTS layer is able to successfully overcome the constraint of thinner Si wafers on longer‐wavelength photon absorption leading to current augmentation. The addition of p++‐AlSb as the BSF layer also boosts the open‐circuit voltage by 300 mV. The rise in VOC is a result of the larger built‐in potential in ZnSe/Si, Si/CTS, and CTS/AlSb interfaces. With enriched current and voltage, the final proposed n‐ZnSe/p‐Si/p+‐CTS/p++‐AlSb heterostructure theoretically records an efficiency of 35.48% in ultrathin Si solar cells. The current compensation obtained using CTS thin film in this work can give optimism about the future of ultrathin Si solar cells.

Optical simulation of ultimate performance enhancement in ultrathin Si solar cells by semiconductor nanocrystal energy transfer sensitization

Energy transfer (ET) from nanocrystals (NCs) has shown potential to enhance the optoelectronic performance of ultrathin semiconductor devices such as ultrathin Si solar cells, but the experimental identification of optimal device geometries for maximizing the performance enhancement is highly challenging due to a large parameter space. Here, we have demonstrated a general theoretical framework combining transfer matrix method (TMM) simulations and energy transfer (ET) calculations to reveal critical device design guidelines for developing an efficient, NC-based ET sensitization of ultrathin Si solar cells, which are otherwise infeasible to identify experimentally. The results uncover that the ET-driven NC sensitization is highly effective in enhancing the short circuit current (JSC) in sub-100 nm-thick Si layers, where, for example, the ET contribution can account for over 60% of the maximum achievable JSC in 10 nm-thick ultrathin Si. The study also reveals the limitation of the ET approach, which becomes ineffective for Si active layers thicker than 5 μm, being dominated by conventional optical coupling. The demonstrated simulation approach not only enables the development of efficient ultrathin Si solar cells but also should be applicable to precisely assessing and analyzing diverse experimental device geometries and configurations for developing new efficient ET-based ultrathin semiconductor optoelectronic devices.

Fabrication of quasi-hexagonal Si nanostructures and its application for flexible crystalline ultrathin Si solar cells

Optimally designed Si nanostructures can serve as effective light trapping structures for flexible crystalline ultrathin Si solar cells. In this study, we develop a unique quasi-hexagonal inverted nano-pyramid in a hexagonal array, fabricated by a combined process of nanosphere lithography and wet etching. Self-assembled silica nanoparticles were deposited on Si wafers by spin coating, followed by deposition of triangular metal nanodisks in a hexagonal array. The metal nanodisks were used as a wet etch mask in an alkaline solution to create the quasi-hexagonal Si nanostructures. We investigated a temporal evolution of the Si nanostructures with increasing the etch time to optimize optical performances. The newly developed nanostructures take a quasi-hexagonal inverted pyramid, which provides geometrically high compatibility with the self-assembled monolayers in a hexagonal array. We incorporated these quasi-hexagonal nanostructures to the flexible crystalline ultrathin Si solar cells, and the novel nanostructures exhibited optical performances comparable to conventional micro-pyramid textures while showing the enhanced mechanical flexibility of the ultrathin Si-based solar cells.

Random nanohole arrays and its application to crystalline Si thin foils produced by proton induced exfoliation for solar cells

We report high efficiency cell processing technologies for the ultra-thin Si solar cells based on crystalline Si thin foils (below a 50 µm thickness) produced by the proton implant exfoliation (PIE) technique. Shallow textures of submicrometer scale is essential for effective light trapping in crystalline Si thin foil based solar cells. In this study, we report the fabrication process of random Si nanohole arrays of ellipsoids by a facile way using low melting point metal nanoparticles of indium which were vacuum-deposited and dewetted spontaneously at room temperature. Combination of dry and wet etch processes with indium nanoparticles as etch masks enables the fabrication of random Si nanohole arrays of an ellipsoidal shape. The optimized etching processes led to effective light trapping nanostructures comparable to conventional micro-pyramids. We also developed the laser fired contact (LFC) process especially suitable for crystalline Si thin foil based PERC solar cells. The laser processing parameters were optimized to obtain a shallow LFC contact in conjunction with a low contact resistance. Lastly, we applied the random Si nanohole arrays and the LFC process to the crystalline Si thin foils (a 48 µm thickness) produced by the PIE technique and achieved the best efficiency of 17.1% while the planar PERC solar cell without the Si nanohole arrays exhibit 15.6%. Also, we demonstrate the ultra-thin wafer is bendable to have a 16 mm critical bending radius.

Optimization and optical characterization of vertical nanowire arrays for core-shell structure solar cells

In this work we study optical properties of vertical silicon nanowire (SiNW) arrays fabricated using metal assisted chemical etching (MACE) coupled with nanosphere lithography (NSL). We have studied optimal configurations minimizing total reflectance of 2µm long SiNW arrays by modeling and compared their performance with experimental data. Fabricated SiNW arrays have shown lower total reflectance than modeled perfectly periodic ones. This has been found to be due to a variation of NW geometry and the presence of domains caused by the self-assembly during NSL process. We have developed a statistical model (based on rigorous coupled wave analysis) describing geometry variations and also demonstrated that different domains have rotated diffraction pattern with respect to their symmetry axes. The statistical model has been successfully validated on total reflectance and normalized Mueller matrix data. Furthermore, we have found that a very high light trapping can be achieved for nanowires only 125nm long (Jsc equivalent of up to 42mA/cm2), which can be exploited in thin and ultra-thin Si solar cells.

Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects.

Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

Nanoscale photon management in silicon solar cells

Light absorption in a photovoltaic device becomes critical as the thickness of an absorber layer is decreased to reduce cost. To enhance light absorption, photon management at the nanoscale has been studied because conventional methods, which are based on micrometer-sized structure, do not work well for thinner solar cells. This article reviews recent progress in photon management on the nanoscale for increasing light absorption in Si solar cells. The methodology for the absorption enhancement will be discussed, followed by advances in nanofabrication techniques that make the methodology a scalable and viable solution. The authors conclude with a discussion of the challenge of photon management schemes and future directions for light trapping in ultra-thin Si solar cells.

Light trapping limits in plasmonic solar cells: an analytical investigation

We analytically investigate the light trapping performance in plasmonic solar cells with Si/metallic structures. We consider absorption enhancements for surface plasmon polaritons (SPPs) at planar Si/metal interfaces and localized surface plasmon resonances (LSPRs) for metallic spheres in a Si matrix. We discover that the enhancement factors at Si/metal interfaces are not bound to the conventional Lambertian limit, and strong absorption can be achieved around plasmonic resonant frequencies. In addition, those enhancements are greatly reduced as the fields decay away from the Si/metal interfaces. Therefore, localized plasmonic resonances can be used as efficient light trapping schemes for ultrathin Si solar cells (< 50 nm), while photonic guided mode enhancement is more appropriate for thicker films.