Ultrathin Magnetic Layers Research Articles

Multiscale approach for modeling magnetization properties of inhomogeneous ultrathin magnetic layers

Multiscale approach for modeling magnetization properties of inhomogeneous ultrathin magnetic layers

Magnetic Domain and Structural Defects Size in Ultrathin Films

Herein, a model is proposed for measuring the structural defects size r0 in an ultrathin magnetic layer with perpendicular magnetic anisotropy. Based on the observations of magnetic domains in Ta/Pt/Co/Pt ultrathin films, using polar magneto‐optical Kerr effect microscopy and measurements of their magnetic anisotropies, the correlation between magnetic domains size D and structural defects size r0, as well as the defects concentration parameter αK, which designates the degree of pinning, has been modeled. The average r0 value found is high in the sample with unannealed buffer layers and considerably decreases with annealing. It is 6.17 nm with unannealed Ta/Pt buffer layers, 1.06 nm in sample with Ta/Pt buffer layers annealed at 423 K, and 0.49 nm in that with buffer layers annealed at 573 K. The significant drop of r0 is in good agreement with the high depinning noted with buffer layers annealing in recent work.

Defect-induced magnetism in TiO2: An example of quasi 2D magnetic order with perpendicular anisotropy

Magnetic order at room temperature induced by atomic lattice defects, like vacancies, interstitials, or their pairs, has been observed in a large number of different non-magnetic hosts, such as pure graphite, oxides, and silicon-based materials. High Curie temperatures and time-independent magnetic response at room temperature indicate the extraordinary robustness of this new phenomenon in solid-state magnetism. In this work, we review experimental and theoretical results of pure TiO2 (anatase), whose magnetic order can be triggered by low-energy ion irradiation. In particular, we discuss the systematic observation of an ultrathin magnetic layer with perpendicular magnetic anisotropy at the surface of this oxide.

Toward a systematic discovery of artificial functional magnetic materials

Although ferromagnets are found in all kinds of technological applications, only few substances are known to be intrinsically ferromagnetic at room temperature. In the past twenty years, a plethora of new artificial ferromagnetic materials have been found by introducing defects into non-magnetic host materials. In contrast to the intrinsic ferromagnetic materials, they offer an outstanding degree of material engineering freedom, provided one finds a type of defect to functionalize every possible host material to add magnetism to its intrinsic properties. Still, one controversial question remains: Are these materials really technologically relevant ferromagnets? To answer this question, in this work the emergence of a ferromagnetic phase upon ion irradiation is systematically investigated both theoretically and experimentally. Quantitative predictions are validated against experimental data from the literature of SiC hosts irradiated with high energy Ne ions and own experiments on low energy Ar ion irradiation of TiO$_2$ hosts. In the high energy regime, a bulk magnetic phase emerges, which is limited by host lattice amorphization, whereas at low ion energies an ultrathin magnetic layer forms at the surface and evolves into full magnetic percolation. Lowering the ion energy, the magnetic layer thickness reduces down to a bilayer, where a perpendicular magnetic anisotropy appears due to magnetic surface states.

Vapor Deposition of Magnetic Van der Waals NiI2 Crystals.

The recent discovery of van der Waals magnetic materials has attracted great attention in materials science and spintronics. The preparation of ultrathin magnetic layers down to atomic thickness is challenging and is mostly by mechanical exfoliation. Here, we report vapor deposition of magnetic van der Waals NiI2 crystals. Two-dimensional (2D) NiI2 flakes are grown on SiO2/Si substrates with a thickness of 5-40 nm and on hexagonal boron nitride (h-BN) down to monolayer thickness. Temperature-dependent Raman spectroscopy reveals robust magnetic phase transitions in the as-grown 2D NiI2 crystals down to trilayer. Electrical measurements show a semiconducting transport behavior with a high on/off ratio of 106 for the NiI2 flakes. Lastly, density functional theory calculation shows an intralayer ferromagnetic and interlayer antiferromagnetic ordering in 2D NiI2. This work provides a feasible approach to epitaxy 2D magnetic transition metal halides and also offers atomically thin materials for spintronic devices.

Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

Perpendicular magnetic anisotropy (PMA) ferromagnetic CoFeB with dual MgO interfaces is an attractive material system for realizing magnetic memory applications that require highly efficient, high speed current-induced magnetic switching. Using this structure, a sub-nanometer CoFeB layer has the potential to simultaneously exhibit efficient, high speed switching in accordance with the conservation of spin angular momentum, and high thermal stability owing to the enhanced interfacial PMA that arises from the two CoFeB-MgO interfaces. However, the difficulty in attaining PMA in ultrathin CoFeB layers has imposed the use of thicker CoFeB layers which are incompatible with high speed requirements. In this work, we succeeded in depositing a functional CoFeB layer as thin as five monolayers between two MgO interfaces using magnetron sputtering. Remarkably, the insertion of Mg within the CoFeB gave rise to an ultrathin CoFeB layer with large anisotropy, high saturation magnetization, and good annealing stability to temperatures upwards of 400 °C. When combined with a low resistance-area product MgO tunnel barrier, ultrathin CoFeB magnetic tunnel junctions (MTJs) demonstrate switching voltages below 500 mV at speeds as fast as 1 ns in 30 nm devices, thus opening a new realm of high speed and highly efficient nonvolatile memory applications.

Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy

We study the influence of He+ irradiation induced interface intermixing on magnetic domain wall (DW) dynamics in W-CoFeB (0.6 nm)-MgO ultrathin films, which exhibit high perpendicular magnetic anisotropy and large Dzyaloshinskii-Moriya interaction (DMI) values. Whereas the pristine films exhibit strong DW pinning, we observe a large increase in the DW velocity in the creep regime upon He+ irradiation, which is attributed to the reduction of pinning centers induced by interface intermixing. Asymmetric in-plane field-driven domain expansion experiments show that the DMI value is slightly reduced upon irradiation, and a direct relationship between DMI and interface anisotropy is demonstrated. Our findings provide insights into the material design and interface control for DW dynamics, as well as for DMI, enabling the development of high-performance spintronic devices based on ultrathin magnetic layers.

Far-Infrared Reflection from Heterostructures Made of Ultrathin Ferromagnetic Layers

Recent progress has been made in creating terahertz magnons using ultrathin ferromagnetic layers. Due to their short lifetimes, these can be difficult to measure. Here we detail a calculation that shows that infrared magnons can be detected using standard reflection and attenuated total reflection measurements from a thin-film heterostructure made up of alternating ultrathin magnetic and nonmagnetic layers. We use an entire-cell effective-medium calculation to find the magnetic permeability of the heterostructure and then use electromagnetic boundary conditions to calculate reflectivity as a function of frequency. There are appreciable dips in the reflectivity at infrared magnon resonance frequencies, for realistic material parameters. Moreover, the strong coupling of magnon photons indicates the possible use of 50 GHz–1 THz magnons in integrated signal-processing devices.

Enhancement of spin transparency by interfacial alloying

We report that atomic-layer alloying (intermixing) at a Pt/Co interface can increase, by approximately 30%, rather than degrade the interfacial spin transparency, and thereby strengthen the efficiency of the dampinglike spin-orbit torque arising from the spin Hall effect in the Pt. At the same time, this interfacial alloying substantially reduces fieldlike spin-orbit torque. Insertion of an ultrathin magnetic alloy layer at heavy-metal/ferromagnet interfaces represents an effective approach for improving interfacial spin transparency that may enhance not only spin-orbit torques but also the spin detection efficiency in inverse spin Hall experiments.

Precise Determination of the Temperature Gradients in Laser-irradiated Ultrathin Magnetic Layers for the Analysis of Thermal Spin Current

We investigated the temperature distribution induced by laser irradiation of ultrathin magnetic films by applying a finite element method (FEM) to the finite difference time domain (FDTD) representation for the analysis of thermal induced spin currents. The dependency of the thermal gradient (∇T) of ultrathin magnetic films on material parameters, including the reflectivity and absorption coefficient were evaluated by examining optical effects, which indicates that reflectance (R) and the apparent absorption coefficient (α*) play important roles in the calculation of ∇T for ultrathin layers. The experimental and calculated values of R and α* for the ultrathin magnetic layers irradiated by laser-driven heat sources estimated using the combined FDTD and FEM method are in good agreement for the amorphous CoFeB and crystalline Co layers of thicknesses ranging from 3~20 nm. Our results demonstrate that the optical parameters are crucial for the estimation of the temperature gradient induced by laser illumination for the study of thermally generated spin currents and related phenomena.

Double-spiral magnetic structure of the Fe/Cr multilayer revealed by nuclear resonance reflectivity

We have studied the magnetization depth profiles in a [57Fe(dFe)/Cr(dCr)]x30 multilayer with ultrathin Fe layers and nominal thickness of the chromium spacers dCr 2.0 nm using nuclear resonance scattering of synchrotron radiation. The presence of a broad pure-magnetic half-order (1/2) Bragg reflection has been detected at zero external field. The joint fit of the reflectivity curves and Mossbauer spectra of reflectivity measured near the critical angle and at the "magnetic" peak reveals that the magnetic structure of the multilayer is formed by two spirals, one in the odd and another one in the even iron layers, with the opposite signs of rotation. The double-spiral structure starts from the surface with the almost antiferromagnetic alignment of the adjacent Fe layers. The rotation of the two spirals leads to nearly ferromagnetic alignment of the two magnetic subsystems at some depth, where the sudden turn of the magnetic vectors by ~180 deg (spin-flop) appears, and both spirals start to rotate in opposite directions. The observation of this unusual double-spiral magnetic structure suggests that the unique properties of giant magneto-resistance devices can be further tailored using ultrathin magnetic layers.

A skyrmion-based spin-torque nano-oscillator

A model for a spin-torque nano-oscillator based on the self-sustained oscillation of a magnetic skyrmion is presented. The system involves a circular nanopillar geometry comprising an ultrathin film free magnetic layer with a strong Dzyaloshinkii–Moriya interaction and a polariser layer with a vortex-like spin configuration. It is shown that spin-transfer torques due to current flow perpendicular to the film plane leads to skyrmion gyration that arises from a competition between geometric confinement due to boundary edges and the vortex-like polarisation of the spin torques. A phenomenology for such oscillations is developed and quantitative analysis using micromagnetics simulations is presented. It is also shown that weak disorder due to random anisotropy variations does not influence the main characteristics of the steady-state gyration.

Enhanced perpendicular coercivity of ultrathin perpendicularly magnetized Tb–Fe–Co films on silicon substrates using a thin Pt underlayer

Abstract We have studied the effect of an additional thin Pt underlayer on the magnetic properties of ultrathin perpendicularly magnetized TbFeCo films grown on silicon substrates. We have demonstrated that the presence of a thin Pt underlayer can enhance the perpendicular coercivity of ultrathin TbFeCo films with thickness down to 1 nm while preserving their low saturation magnetization. This can be attributed to the hybridization of Pt and Co orbitals, which induces the strong interfacial perpendicular anisotropy of Co/Pt and/or CoFe/Pt. These characteristics are potentially useful to reduce the critical current density induced magnetization switching and enhance the thermal stability of a magnetic tunnel junction and the current-induced domain wall motion in a nanowire made out of the ultrathin TbFeCo magnetic layer.

Universal scaling of the magnetic anisotropy in two-dimensional rare-earth layers

Unraveling the influence that low dimensionality has upon the spin's stability in two-dimensional (2D) systems is instrumental for the efficient engineering of energy barriers in ultrathin magnetic layers. Taking rare-earth-based ultrathin multilayered nanostructures as a model system, we have investigated the dissimilar impact that low dimensionality and finite-size effects have upon the magnetic anisotropy energy (MAE) at the nanoscale. We conclusively show that the reduced dimensionality of the spin's system in 2D ferromagnetic layers imprints on the MAE constants a universal temperature decay as a quadratic power law of the reduced magnetization. This result is in agreement with predictions, although in marked contrast to the rank-dependent, thereby faster, decay of the MAE constants observed in three-dimensional nanostructures.

Magnetic phase transitions in Ta/CoFeB/MgO multilayers

We study thin films and magnetic tunnel junction nanopillars based on Ta/Co20Fe60B20/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer forms at the Co20Fe60B20/MgO interface. At approximately 160 K, the oxide undergoes a phase transition from an insulating antiferromagnet at low temperatures to a conductive weak ferromagnet at high temperatures. This interfacial magnetic oxide is expected to have significant impact on the magnetic properties of CoFeB-based multilayers used in spin torque memories.

Orbital chirality and Rashba interaction in magnetic bands

The phenomenon of Rashba spin-orbit coupling is examined theoretically for an ultrathin magnetic layer in contact with a nonmagnetic heavy-metal layer. From a first-principles calculation, a large Rashba parameter of order 1 eV \AA{} is obtained, which makes the Rashba interaction a powerful tool for enhancing the spin-transfer torque. Interestingly, the magnitude and sign of the parameter vary from energy band to energy band, which we attribute to band-specific chiral ordering of the orbital angular momentum. We argue that the band dependence of the Rashba parameter provides a natural explanation for a host of recent experiments and may enhance the potential for device application of the Rashba-active magnetic layer.

ChemInform Abstract: Electrodeposited Magnetic Layers in the Ultrathin Limit

AbstractReview: 64 refs.

Prediction of Giant Spin Motive Force due to Rashba Spin-Orbit Coupling

Magnetization dynamics in a ferromagnet can induce a spin-dependent electric field through a spin motive force. Spin current generated by the spin-dependent electric field can in turn modify the magnetization dynamics through spin-transfer torque. While this feedback effect is usually weak and thus ignored, we predict that in Rashba spin-orbit coupling systems with a large Rashba parameter α(R), the coupling generates the spin-dependent electric field [±(α(R)m(e)/eħ)(z[over ^]×∂m/∂t)], which can be large enough to modify the magnetization dynamics significantly. This effect should be relevant for device applications based on ultrathin magnetic layers with strong Rashba spin-orbit coupling.

Enhancement of perpendicular exchange bias in [Pd/Co]/FeMn thin films by tailoring the magnetoelastically induced perpendicular anisotropy

The effects of magnetoelastically induced perpendicular anisotropy, KFM,me, on the perpendicular exchange bias (PEB) characteristics in [Pd/Co]5/Fe50Mn50 thin films have been explored by inserting ultrathin CoFe magnetic layers with different thicknesses, compositions, and Ar sputtering gas pressures (PAr,CoFe) at the interface between [Pd/Co]5 and FeMn. It was clearly found that the [Pd/Co]5/CoFe/FeMn with CoFe sputtered at a low PAr,CoFe showed great enhancement in PEB due to the development of intrinsic compressive stress in the CoFe resulting in improving KFM,me and interfacial exchange coupling. Additionally, this effect was more significant for Co80Fe20 insertion than Co90Fe10 due to its larger magnetostriction.

Electrodeposited magnetic layers in the ultrathin limit

Abstract