Ultra-thin BOX SOI Research Articles

Analytical subthreshold current modeling of nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical gaussian doping profile

Based on the evanescent-mode analysis, an insightful study of the channel potential is performed for the nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical Gaussian doping. And a two-dimensional (2D) analytical subthreshold current model is presented. The front and the back channel subthreshold currents are effectively derived using the inversion layer current density model which takes the Gaussian doping into account. The accuracy of the model has been verified by 2D numerical device simulations using Sentaurus Technology Computer-Aided Design (TCAD) from Synopsys. The model provides a deep understanding and can be instrumental for the nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a non-uniform doping profile operating in the subthreshold regime.

Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

A threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).