The ultrafast phase dynamics of carriers in Ge quantum dots (QDs) is studied by usingphotocurrent correlation phase spectroscopy (PCPS) at room temperature. For betterunderstanding the ultrafast phase dynamics of carriers on the sublevels of GeQDs, the sublevels in Ge QDs are first investigated by Fourier transform infraredphotocurrent spectroscopy, and the result shows that there are two sublevels(0.76 and 0.84 eV) in Ge QDs. The ultrafast phase dynamics signals measured byPCPS are well behaved with a smooth wave line and oscillating trailing edge. Thedephasing time has been obtained by numerically simulating the PCPS data interms of optical Bloch equations. The dephasing time () originating in the transition from the sublevel of the Ge QDs to the conduction band isslightly longer than that () originating in the Si band-to-band transition.
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