We have successfully realized the synthesis of one-dimensional (1D) van der Waals heterostructures with single-walled carbon nanotube (SWCNT) as a template. A typical 1D heterostructure is composed of SWCNT, boron nitride nanotube (BNNT), and molybdenum disulfide nanotube (MoS2NT), coaxially grown by serial chemical vapor deposition (CVD) steps [1]. Isolated SWCNTs, BN-CVD at high temperatures such as 1100 °C from ammonia borane, and MoS2-CVD from MoO3 and Sulfur are original key requirements. Recently, we have achieved the additional CVD growth of carbon nanotubes from ethanol-CVD. We can remove SWCNT from SWCNT@BNNT by gentle oxidation process because BNNT is thermally more stable than SWCNT [2]. By comparing optical properties of BNNT@MoS2NT and SWCNT@BNNT@MoS2NT, we found the strong photoluminescence (PL) from monolayer MoS2NT of BNNT@MoS2NT and the exciton energy transfer between SWCNT and MoS2NT through thin BNNT for SWCNT@BNNT@MoS2NT [2]. We expect to prove the inter-tube excitons from the ultrafast optical spectroscopy [3]. We can realize various hetero-nanotubes in different morphologies such as SWCNT thin film, pillar-suspended SWCNT, chirality separated SWCNT deposited on TEM grid, and bulk SWCNTs grown on zeolite-supported catalysts [4]. Simply with SWCNT@BNNT in a thin film form, the enhanced thermal conductance [5] is very promising for macroscopic applications of heterostructures. Because BNNT coating over SWCNT film will not influence the transparency in the visible range, those films are immediately applicable for a saturable absorber in mode-lock fiber lasers. In order to fabricate a practical electronic or optoelectronics devices, micro-meter long 1D van der Waals heterostructure SWCNT@BNNT@MoS2NT were prepared between Si pillars. After transferring to SiO2 substrates and fabricating metal electrodes, we have examined various device characteristics. The naturally p-doped SWCNT and n-type MoS2NT becomes a radial semiconductor–insulator–semiconductor (S-I-S) heterojunction diode [6]. Optoelectronic and electronic properties of such devices will be discussed.Part of this work was supported by JSPS KAKENHI Grant Numbers JP18H05329, JP20H00220, and by JST, CREST Grant Number JPMJCR20B5, Japan.