Ultra-thin Silicon Films Research Articles

Transport and dielectric properties of MIS structure with embedded Si QDs (AuPd/SiO2:Si QDs/n-Si) grown by MBE

This study focuses on the growth of silicon quantum dots (Si QDs) on insulator substrates via solid-state dewetting of ultrathin silicon films deposited by molecular beam epitaxy (MBE). The resulting Si QDs exhibit well-defined spherical shapes, low size dispersion with an average diameter of 6 nm, and a high density (1012/cm2), making them ideal for microelectronic applications. Current-voltage spectroscopy and impedance spectroscopy were employed to investigate the electrical transport and dielectric properties of Si QDs integrated into a metal-insulator-semiconductor (MIS) structure (AuPd/SiO2: Si QDs/n-Si). Current-voltage measurements reveal that the insertion of Si QDs into the MIS structure improves the electrical transport by introducing new conduction mechanisms. Impedance measurements demonstrate the influence of Si QDs on the frequency dependence of the real part of the dielectric constant (ε′) and the loss tangent (tan δ). Furthermore, Si QDs impact both the real (M′) and imaginary (M″) parts of the electric modulus. Despite slight deviations in dielectric properties, the MIS structure retains its fundamental nature. These investigations affirm the high electrical quality of Si QDs grown via solid-state dewetting and offer valuable insights for researchers engaged in the development of Si QD-based devices, such as non-volatile memories and MIS photodetectors.

Young's Modulus Characterization of Nano‐Level Silicon Nanomembrane

Silicon nanomembrane (SiNM) has drawn great attention for the application in nanoelectrical devices as it shows excellent flexibility and is compatible with the integrated circuit process. The mechanical property measurement of the SiNM with nanoscale thickness is critical. A suspended SiNM (40 nm thick) for mechanical measurements is fabricated by transferring a chemically etched ultrathin monocrystalline silicon film from silicon on insulator wafer to a substrate with a multi‐hole array. And then, the atomic force probe is utilized to load force on the free‐standing SiNM to obtain a force deflection curve, and then the Young's modulus of such floating SiNM can be directly calculated based on the large deflection plane model. It shows that the Young's modulus of such SiNM is basically consistent with that of the bulk silicon. However, the SiNMs’ floating area significantly affects the results, i.e., the Young's modulus varies with the ratio of the suspended area diameter (i.e., hole diameter) to the film thickness. The Young's modulus is independent of hole diameter when the ratio is greater than 425. According to this relationship, the variation of Young's modulus can be predicted for arbitrary thick SiNMs and any transferable nanofilms.

Investigation of perfect narrow-band absorber in silicon nano hole array

In this paper, we proposed a triple layer structure consisting of the bottom silver layer, thin silicon oxide space layer, and ultrathin semiconductor silicon film with nano hole array achieving three absorption peaks with narrow band. The absorption spectrum can be easily controlled by adjusting the structural parameters including the radius and period of the nano hole array, and the maximal absorption can reach 99.0% and the narrowest full width of half maximum can reach about 6.5 nm in theory. We also clarified the physical mechanism of the proposed structure in details by finite-difference time-domain simulation, in which the three narrow band perfect adsorption peaks can be attributed to electric dipole resonance, magnetic dipole resonance and plasmonic resonance respectively. At the same time, we used a low-cost nanosphere lithography method to fabricate the proposed nano hole array in large area. In experiment, the absorption peak of the proposed triple layer structure can reach up to 98.3% and the narrowest full width of half maximum can reach up to about 10.1 nm. The highest quality factor Q can reach up to 98.4. This work can open a new avenue for high-quality factor narrow band perfect absorption using ultrathin semiconductor film and benefit for many fields such as infrared sensors, plasmonic filters, and hyperspectral imaging.

Ultrasonic resonance-based inspection of ultra-thin nickel sheets bonded to silicone

In the field of non-destructive testing (NDT), The detection of bonding defects between ultra-thin metal and silica gel is a difficult problem. In this study, In this study, ultrasonic resonance method was used to evaluate the bonding strength of ultra-thin metal to silica gel bonding structure. The composite parts of ultra-thin nickel sheet and silicon sheet with three different bonding states were studied. The bonding state of nickel sheet and silica gel is different, and the absorption of ultrasound is different. Using the resonance generated by high-frequency ultrasound in ultra-thin nickel sheet, the acoustic attenuation of the combination of ultra-thin nickel sheet and silicon rubber sheet was analyzed by resonance signal, and the bonding state between ultra-thin nickel sheet and silicon rubber sheet was characterized by bonding coefficient. Through experimental comparison, the results showed that the attenuation of ultrasonic signal in the nickel sheet and silicon film with different adhesive states characterize the adhesive state of ultra-thin nickel sheet and silicon film by the bonding coefficient, the bonding coefficient of good parts, weak adhesive parts and debonded parts is reduced successively. By setting an appropriate determination threshold value, the bonding state between the ultra-thin nickel sheet and the silicon film can be accurately determined according to the bonding coefficient obtained by detection.

High-performance thin-film lithium niobate electro-optic modulator based on etching slot andultrathin silicon film.

An electro-optic modulator (EOM) is an indispensable component to connect the electric and optical fields. Here, we propose a high-performance, thin-film lithium niobate-based EOM, where the modulation waveguide is formed by an etching slot on the lithium niobate film and the deposit of an ultrathin silicon film in the slot region. Therefore, a small mode size and high mode energy can be simultaneously achieved in the LN region with a high EO coefficient, which will be beneficial to increase the EO overlap and gradually decrease in the mode size. Further, we employed a waveguide structure to construct a typical Mach-Zehnder interference-type EOM. According to the requirements of high-speed traveling wave modulation, we conduct the index matching, impedance matching, and low-loss operation. From the results, the key half-wave voltage length product and 3dB modulation bandwidth are, respectively, 1.45Vcm and 119GHz in a modulation length of 4mm. Moreover, a larger 3dB bandwidth also can be achieved by shortening the modulation length. Therefore, we believe the proposed waveguide structure and EOM will provide new ways to enhance the performance of LNOI-based EOMs.

Generation of sub-100fs electron pulses for time-resolved electron diffraction using a direct synchronization method.

To investigate photoinduced phenomena in various materials and molecules, ultrashort pulsed x-ray and electron sources with high brightness and high repetition rates are required. The x-ray and electron's typical and de Broglie wavelengths are shorter than lattice constants of materials and molecules. Therefore, photoinduced structural dynamics on the femtosecond to picosecond timescales can be directly observed in a diffraction manner by using these pulses. This research created a tabletop ultrashort pulsed electron diffraction setup that used a femtosecond laser and electron pulse compression cavity that was directly synchronized to the microwave master oscillator (∼3GHz). A compressed electron pulse with a 1kHz repetition rate contained 228 000 electrons. The electron pulse duration was estimated to be less than 100fs at the sample position by using photoinduced immediate lattice changes in an ultrathin silicon film (50nm). The newly developed time-resolved electron diffraction setup has a pulse duration that is comparable to femtosecond laser pulse widths (35-100fs). The pulse duration, in particular, fits within the timescale of photoinduced phenomena in quantum materials. Our developed ultrafast time-resolved electron diffraction setup with a sub-100fs temporal resolution would be a powerful tool in material science with a combination of optical pump-probe, time-resolved photoemission spectroscopic, and pulsed x-ray measurements.

Absorption of light by ultra-thin silicon films covered with a monolayer of elliptical metal nanoparticles

The absorption of Si films covered with an array of elliptical metal nanoparticles (NPs) of identical orientation and shape is investigated theoretically. We consider silicon films with thickness in the range of 80–200 nm. The symmetry axis of the NPs is taken perpendicular to the surface of silicon surface and their short axis has a radius of 10 nm in the plane of the Si film. A 10-nm-thick SiO2 layer separates the submonolayer NP coverage from the silicon film. The spectral properties of the considered hybrid system are studied in terms of its effective susceptibility. Specifically, the dependence of light absorption by the NPs covering the ultrathin Si film on their morphology and material composition is established. For chromium and silver NPs, the appearance of collective absorption modes in the hybrid structures is predicted.

Enhanced absorption in thin and ultrathin silicon films by 3D photonic band gap back reflectors

Since thin and ultrathin silicon films have limited optical absorption, we explore the effect of a nanostructured back reflector to recycle the unabsorbed light. As a back reflector, we investigate a three-dimensional (3D) photonic band gap crystal made from silicon that is readily integrated with the thin silicon films. We numerically obtain the optical properties by solving the 3D time-harmonic Maxwell equations using the finite-element method, and model silicon with experimentally determined optical constants. The absorption enhancement spectra and the photonic band gap generated current density are obtained by weighting the absorption spectra with the AM 1.5 standard solar spectrum. We study thin films in two different regimes, much thicker (L Si = 2400 nm) or much thinner (L Si = 80 nm) than the wavelength of light. For L Si = 2400 nm thin film, the 3D photonic band gap crystal enhances the spectrally averaged (λ = 680 nm to 880 nm) silicon absorption by 2.22 × (s −pol.) to 2.45 × (p −pol.), which exceeds the enhancement of a perfect metal back reflector (1.47 to 1.56 ×). The absorption is considerably enhanced by the (i) broadband angle and polarization-independent reflectivity in the 3D photonic band gap, and (ii) the excitation of many guided modes in the film by the crystal’s surface diffraction leading to greatly enhanced path lengths. For L Si = 80 nm ultrathin film, the photonic crystal back reflector yields a striking average absorption enhancement of 9.15 ×, much more than 0.83 × for a perfect metal. This enhancement is due to a remarkable guided mode that is confined within the combined thickness of the ultrathin film and the photonic crystal’s Bragg attenuation length. An important feature of the 3D photonic band gap is to have a broad bandwidth, which leads to the back reflector’s Bragg attenuation length being much shorter than the silicon absorption length. Consequently, light is confined inside the thin film and the remarkable absorption enhancements are not due to the additional thickness of the photonic crystal back reflector. We briefly discuss a number of high-tech devices that could profit from our results, including ultrathin film solar cells.

Light-harvesting enhancement in ultrathin film silicon solar cells using photonic and plasmonic nanostructures

Past few decades, nanostructures are useful in the active region and light-harvesting layers in thin film solar cells. In this work, the high reflectance alternative Si/SiO2 distributed Bragg reflectors (DBRs), and aluminum (Al) thin film layers were integrated as a backside reflectors in ultrathin film silicon solar cells to improve the light trapping mechanism using finite-difference time-domain (FDTD) method. DBR is known as one-dimensional photonic crystal (1DPC) used as backside reflectors with the addition of SiO2 buffer layer. Further, the transverse electric (TE) and magnetic (TM) field distribution shown the strong light scattering in the silicon active layer region by integration of top (ITO) and bottom (Al) nanogratings. Both polarization conditions yielded the highest current density (Jsc) of 22.03 (TE) and 30.42 mA/cm2 (TM) achieved within 50 nm active region thickness.

Electronic energy loss and straggling in low energy H+ and H2 + interaction with silicon films

ABSTRACT The appearance of atomic structures of nanoscopic dimensions, with new and interesting physical properties, requires revisiting various aspects of particle interaction with solid matter. For this purpose in this work we present a study of electronic energy loss of H+ and protons (fragments) from the dissociation of H2 + ions interacting with ultra-thin amorphous silicon films for incident beam energies from 1 to 10 keV/u. We report measurements of energy distributions of transmitted protons and molecular fragments through these films, from which we derive the average energy losses and the energy loss straggling. Our experimental findings turn out to be in good agreement with nonlinear electronic stopping power models and some previous experimental data.

Transfer of an ultrathin single-crystal silicon film from a silicon-on-insulator to a polymer

This study reports the manufacturing of silicon-on-polymer (SOP). It describes the transfer of a 200 mm diameter silicon thin film from a silicon-on-insulator (SOI) substrate to a flexible polymer. The thickness of the single-crystal silicon film was less than 200 nm, and the transfer was achieved by bonding the SOI wafer to a temporary silicon carrier with an adhesive polymer. Various parameters of the transfer were investigated: adherence of the stack, temperature of bonding, temporary carrier, and Si film thickness. The substrate and the SOI buried oxide were removed by mechanical grinding and chemical etching. The Si thin film was held on a flexible tape, and the temporary carrier was dismounted. SOPs consisting of 20–205-nm thin Si films on a flexible polymer (230 μm) were successfully obtained. Full wafers or patterned wafers of 200-mm diameter could be transferred.

Optical field concentrator with low absorption metasurfaces based on planar silicon nanoantennas on silica

Plasmonic metamaterials open a pathway to a multitude of different applications, from ultrasensitive sensors to merging the packaging density of electronics and the speed of photonics in a single all-optical device. A severe limitation to their wider use is high absorption due to the mandatory presence of free electron-containing conductive parts which are lossy by definition. In this contribution we consider an alternative solution in the form of ultrathin silicon films deposited on a silica substrate. The films are patterned as arrays of elongated rhombuses acting as bowtie nanoantennas. We consider the effect of sharp tips and the proximity effect on the electromagnetic field concentration in such low-loss metasurfaces. Our structures have the advantage of very low absorption losses with an order of magnitude field enhancement and the virtue of full compatibility with the standard planar technologies. This makes them convenient for various practical applications which integrate high field concentration with e.g. waveguiding properties, for instance microreactors, labs-on-a-chip, photocatalytic systems and various other Micro-Opto-Electro-Mechanical System (MOEMS) devices integrating optical, microfluidic and other functionalities.

Efficiency enhancement of an ultra-thin film silicon solar cell using conical-shaped nanoparticles: similar to superposition (top, middle, and bottom)

The use of conical-shaped plasmonic nanostructures for light management in an ultra-thin silicon solar cell has been investigated. The optical absorption and hence photocurrent are obtained for several cases of structures using finite difference time domain simulations. In this paper, we demonstrate that the use of superposition theorem causes significant photocurrent enhancement due to the surface plasmonic effects of nanoparticles. For this, at first, we used one conical-shaped nanoparticle at the top side, then in the rear side, and finally, three nanoparticles are used in the top, bottom, and middle sides. Depending on the incident light wavelength, each nanoparticle manipulates the part of the spectrum. The photocurrents of 9.165, 10.463, 16.402, 17.761, and 18.072 mA/cm2, are obtained for a cell without nanoparticles, with one conical-shaped NP at the top, with one conical-shaped NP at the bottom, with two NPs at top and bottom and with three NPs at the top, bottom, and middle, respectively. Finally, the electrical field distribution and generation rate are calculated for proposed structures.

ITO/SiO2/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels

The SiO2 generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to ~72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO2. Furthermore, when the insulating SiO2 film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO2/ITO) on a sapphire substrate, the SiO2 film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO2/ITO films is about 88.3%. The change in capacitance of the ITO/SiO2/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.

Phonon confinement and transport in ultrathin films

Thermal transport by phonons in films with thicknesses of less than 10 nm is investigated in a soft system (Lennard-Jones argon) and a stiff system (Tersoff silicon) using two-dimensional lattice dynamics calculations and the Boltzmann transport equation. This approach uses a unit cell that spans the film thickness, which removes approximations related to the finite cross-plane dimension required in typical three-dimensional-based approaches. Molecular dynamics simulations are performed to obtain finite-temperature structures for the lattice dynamics calculations and to predict thermal conductivity benchmarks. Thermal conductivity decreases with decreasing film thickness until the thickness reaches four unit cells (2.1 nm) for argon and three unit cells (1.6 nm) for silicon. With a further decrease in film thickness, thermal conductivity plateaus in argon while it increases in silicon. This unexpected behavior, which we identify as a signature of phonon confinement, is a result of an increased contribution from low-frequency phonons, whose density of states increases as the film thickness decreases. Phonon mode-level analysis suggests that confinement effects emerge below thicknesses of ten unit cells (5.3 nm) for argon and six unit cells (3.2 nm) for silicon. Thermal conductivity predictions based on the bulk phonon properties combined with a boundary scattering model do not capture the low thickness behavior. To match the two-dimensional lattice dynamics and molecular dynamics predictions for larger thicknesses, the three-dimensional lattice dynamics calculations require a finite specularity parameter that in some cases approaches unity. These findings point to the challenges associated with interpreting experimental thermal conductivity measurements of ultrathin silicon films, where surface roughness and a native oxide layer impact phonon transport.

Frequency-region quantitatively adjustable Si perfect absorbers

In this work, we demonstrate a tri-band perfect absorber with the maximal absorptance of 97% achieved in an ultra-thin silicon film metasurface (thickness, 60 nm, ∼λ/10). Particularly, the resonant absorption peaks are observed to be quantitatively adjustable in the frequency region via tuning the cavity size in the silicon metasurface. Simultaneously, the absorption efficiency remains at a high level for the tri-band spectrum. These features suggest a novel way to artificially manipulate the operation wavelength and hold potential applications in coloring displayer, filtering, hot-electron related optoelectronics.

Si nano-cavity enabled surface-enhanced Raman scattering signal amplification

Surface-enhanced Raman scattering (SERS) detection technique has gained much attention as a powerful analytical tool in recent years. Nevertheless, the attention was mainly focused on the efficient scattering platform by structuring metals themselves, leading to more complex platforms and higher costs. Herein, a new and simple strategy to prepare large-area, low-cost, high-performance SERS substrate is introduced. Ultra-thin semiconductor silicon (Si) film is used as the functional layer for the metallic nano-particles based meta-surface. During the SERS sensing process, the emergence of a Si layer is observed to provide three key contributions: (1) to produce a maximal enhancement factor (EF) ∼470% compared to that of the bare meta-surface, (2) to keep a higher spectral stability for the Raman signal, and (3) to physically interdict the contact between the metal and the molecule. Moreover, the Si film’s thickness is down to the scale of an electron’s Bohr radius, indicating efficient electronic oscillations for the semiconductor material under electromagnetic excitation. The charge transfer behaviors between the molecules and the Si layer and metal nano-particles can also emerge. These findings could pave new insights on the surface-enhanced spectroscopy and lead to applications for the high-performance, large-area, low-cost SERS sensing process.

Direct first-principle-based study of mode-wise in-plane phonon transport in ultrathin silicon films

Fundamental understanding of thermal transport properties in ultrathin Si-based films is essential for the thermal management of nanoelectronic and nanophotonic devices. Using Density-Functional-based tight-binding method and direct iterative solution of linearized Boltzmann transport equation without empirical assumptions, we systematically investigated mode-wise in-plane phonon transport in ultrathin Si films of a few nanometer thickness (0.77–1.90 nm) and the effects of surface morphology. The dimensionality reduction of these films leads to quantum confinement and softening of silicon bonds and in turn changes the dispersion and phonon-phonon interactions. The ultrathin Si films with naturally reconstructed surfaces show a counterintuitively high in-plane thermal conductivity (∼30 W/m-K at 300 K) with relatively weak size dependence and large acoustic phonon contribution, demonstrating that dimensionality reduction alone cannot suppress phonon transport in ultrathin films efficiently. The in-plane thermal conductivities of ultrathin films are very sensitive to surface defects and even atomic-level surface defects can induce up to 10-fold reduction in thermal conductivity due to much enhanced phonon scatterings in low frequency regime. Our direct first-principle-based calculations also show that the conventional modeling of thin films with bulk properties and suppression function may lead to large uncertainty when applied to ultrathin films.

Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms.

The silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) suffer intensive self-heating effects due to the reduced thermal conductivity of the silicon layer while the feature sizes of devices scale down to the nanometer regime. In this work, analytical models of thermal conductivity considering the self-heating effect (SHE) in ultra-thin body fully depleted (UTB-FD) SOI MOSFETs are presented to investigate the influences of impurity, free and bound electrons, and boundary reflection effects on heat diffusion mechanisms. The thermal conductivities of thin silicon films with different parameters, including temperature, depth, thickness and doping concentration, are discussed in detail. The results show that the thermal dissipation associated with the impurity, the free and bound electrons, and especially the boundary reflection effects varying with position due to phonon scattering, greatly suppressed the heat loss ability of the nanoscale ultra-thin silicon film. The predictive power of the thermal conductivity model is enhanced for devices with sub-10-nm thickness and a heavily doped silicon layer while considering the boundary scattering contribution. The absence of the impurity, the electron or the boundary scattering leads to the unreliability in the model prediction with a small coefficient of determination.

Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method**Project supported by the Zhejiang Provincial Natural Science Foundation of China (Grant No. LZ19F040001), the National Natural Science Foundation of China (Grant No. 61473287), and the NSFC–Zhejiang Joint Fund for the Integration of Industrialization Informatization, China (Grant No. U1609213).

Thermal conductivity is an important material parameter of silicon when studying the performance and reliability of devices or for guiding circuit design when considering heat dissipation, especially when the self-heating effect becomes prominent in ultra-scaled MOSFETs. The cross-plane thermal conductivity of a thin silicon film is lacking due to the difficulty in sensing high thermal conductivity in the vertical direction. In this paper, a feasible method that utilizes an ultra-fast electrical pulse within combined with the hot strip technique is adopted. To the best of our knowledge, this is the first work that shows how to extract the cross-plane thermal conductivity of sub-50 nm (30 nm, 17 nm, and 10 nm) silicon films on buried oxide. The ratio of the extracted cross-plane thermal conductivity of the silicon films over the bulk value is only about 6.9%, 4.3%, and 3.8% at 300 K, respectively. As the thickness of the films is smaller than the phonon mean free path, the classical heat transport theory fails to predict the heat dissipation in nanoscale transistors. Thus, in this study, a ballistic model, derived from the heat transport equation based on extended-irreversible-hydrodynamics (EIT), is used for further investigation, and the simulation results exhibit good consistence with the experimental data. The extracted effective thermal data could provide a good reference for precise device simulations and thermoelectric applications.