Types Of Transistors Research Articles

Organic Permeable Base Transistors—Reliable Large‐Scale Anodization for High Frequency Devices

AbstractOrganic permeable base transistors (OPBTs) have demonstrated impressive performance and potential in various applications, such as display driving circuits, light‐emitting transistors, and logic circuits requiring high‐frequency operation. However, large‐scale implementation is hindered by fabrication reliability and repeatability issues, a problem also common with other types of organic transistors, leading to reliance on exceptional “hero” devices. To address this challenge, an electrochemical anodization process is scaled up and optimized for OPBTs to produce consistent performance across an entire 15 cm × 15 cm wafer. By controlling the Al base oxidation, an 87% yield of functional devices and a median transconductance of d−3is achieved S, proving that the anodization process does not degrade the device performance. Additionally, anodization reduces leakage current to below d−9A, increasing the current gain to a median of 106, and decreases the oxide capacitance (Cox) without affecting the transconductance (gm), resulting in a driving‐voltage normalized unity‐gain cutoff frequency (fT/V) of up to 2.6 MHzV−1. The validity of the experimental results is confirmed through properly calibrated technology computer‐aided design (TCAD) simulations, which rely on DC and small‐signal AC analysis of OPBTs, based on the underlying physical equations.

A compact 4T1M2C AMOLED pixel circuit with multimodal drive transistor

We propose a 5-transistor, 2-capacitor (5T2C) AMOLED pixel circuit using a multimodal transistor (MMT) as driver, which may be more appropriately referred to as 4T1M2C to reflect the inclusion of a device which is distinctly different from conventional Ohmic-contact thin-film transistors (TFTs). The MMT is a type of contact-controlled transistor, here implemented with a Schottky source. Its gating mechanisms separate ‘analog' charge injection, controlled by the source contact, from ‘digital' channel conductance switching. The mixed-signal operation of the MMT allows it to perform the function of multiple conventional transistors in a power- and area-efficient manner, enabling pixel circuit design to achieve superior image uniformity and energy efficiency, due to the combination of threshold compensation scheme and inherent saturation properties of the MMT drive transistor.

Design of Multi-Time Programmable Intellectual Property with Built-In Error Correction Code Function Based on Bipolar–CMOS–DMOS Process

The coupling capacitor of the MTP cell used in this paper is an NCAP-type capacitor that has only a source contact, and the layout size of the unit cell is 6.184 μm × 6.295 μm (=38.93 μm2), which is 0.44% smaller than the MTP cell that uses the coupling capacitor of the conventional NMOS transistor type that has both a source contact and a drain contact. In addition, a 4 Kb MTP IP with a built-in ECC function using an extended Hamming code capable of single-error correction and double-error detection was designed for safety considerations. In this paper, a new test algorithm is proposed to test whether the ECC function operates normally in the MTP IP with a built-in ECC function, and it is confirmed through a test using logic tester equipment that the output data DOUT[7:0] and the error flag ERROR_FLAG[1:0] are exactly the same in the cases of no error, a single-bit error, and a double-bit error. In addition, by sharing a current-controlled ring oscillator circuit that uses a current-starved inverter in the VPP, VNN, and VNNL charge pumping circuits that share a single ring oscillator in the erase and program operation modes of the MTP IP and using the regulated VPVR as power, the pumping capacitor size is reduced, and a new technology to reduce ripple voltage variation is proposed. Meanwhile, in the VNN level detector circuit that detects whether the VNN has reached the target voltage, a folded-cascode CMOS OP-AMP whose output swing voltage is almost VDD is used instead of a differential amplifier circuit with a PMOS differential input pair to ensure that normal VNN level detection operation occurs.

High-Entropy Oxides: Pioneering the Future of Multifunctional Materials.

The high-entropy concept affords an effective method to design and construct customized materials with desired characteristics for specific applications. Extending this concept to metal oxides, high-entropy oxides (HEOs) can be fabricated, and the synergistic elemental interactions result in the four core effects, i.e., the high-entropy effect, sluggish-diffusion effect, severe-lattice-distortion effect, and cocktail effect. All these effects greatly enhance the functionalities of this vast material family, surpassing conventional low- and medium-entropy metal oxides. For instance, the high phase stability, excellent electrochemical performance, and fast ionic conductivity make HEOs one of the hot next-generation candidate materials for electrochemical energy conversion and storage devices. Significantly, the extraordinary mechanical, electrical, optical, thermal, and magnetic properties of HEOs are very attractive for applications beyond catalysts and batteries, such as electronic devices, optic equipment, and thermal barrier coatings. This review will overview the entropy-stabilized composition and structure of HEOs, followed by a comprehensive introduction to the electrical, optical, thermal, and magnetic properties. Then, several typical applications, i.e., transistor, memristor, artificial synapse, transparent glass, photodetector, light absorber and emitter, thermal barrier coating, and cooling pigment, are synoptically presented to show the broad application prospect of HEOs. Lastly, the intelligence-guided design and high-throughput screening of HEOs are briefly introduced to point out future development trends, which will become powerful tools to realize the customized design and synthesis of HEOs with optimal composition, structure, and performance for specific applications.

Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

Ferroelectric materials commonly serve as gate insulators in typical field-effect transistors, where their polarization reversal enables effective modulation of the conductivity state of the channel material, thereby realizing non-volatile memory. Currently, novel 2D ferroelectrics unlock new prospects in next-generation electronics and neuromorphic computation. However, the advancement of these materials is impeded by limited selectivity and narrow memory windows. Here, new concepts of 2D ferroelectric perovskite/MoS2 channel heterostructures field-effect transistors are presented, in which 2D ferroelectric perovskite features customizable band structure, few-layered ferroelectricity, and submillimeter-size monolayer wafers. Further studies reveal that these devices exhibit unique charge polarity modulation (from n- to p-type channel) and remarkable nonvolatile memory behavior, especially record-wide hysteresis windows up to 177V, which enables efficient imitation of biological synapses and achieves high recognition accuracy for electrocardiogram patterns. This result provides a device paradigm for future nonvolatile memory and artificial synaptic applications.

Computer Aided Optimization of Insulated Gate Bipolar Transistors

Compared to other types of transistors, insulating gate bipolar transistors (IGBTs) have high on-state current and breakdown voltage, which make them ideal for low-frequency (<20 kHz) power applications, such as switching devices for motor drive systems and uninterruptible power supplies. Although the on-state voltage (VON) of IGBTs is smaller than the on-state voltage of metal-oxide-semiconductor field-effect-transistors at high current densities, VON remains relatively high at low-current densities, reducing the range of applications of IGBTs in the low-current regime. In this presentation, we discuss new results in the optimization of IGBTs using the adjoint method developed in [1]. First, we introduce the doping sensitivity functions of the on-state voltage, on-state resistance, and breakdown voltage and discuss the relationship between the three functionals. Then, we discuss and compare different ways of computing the doping sensitivity functions and present two applications: the first is related to the analysis of variability of on-state and breakdown voltage (from device to device), and the second is related to the global optimization of the doping profile of these transistors. Details about the numerical computation, numerical cost, and sample optimized structures will also be presented at the meeting.

Development and Evaluation of Thread Transistor Based on Carbon-Nanotube Composite Thread with Ionic Gel and Its Application to Logic Gates

We propose a new type of flexible transistor based on carbon-nanotube (CNT) composite thread (CNTCT), i.e., a thread transistor, with ionic gel. In our previous study, we demonstrated that transistor operation was possible by combining metallic and semiconducting CNTCTs as gate and channel with an insulating material. However, its performance was not sufficient. Therefore, we here aim to improve it. For this, we tried to apply ionic gel as a dielectric layer to it. With this, the transistor was expected to be an electric-double-layer transistor. The transistor performance was improved, and the on/off ratio of the transistor increased by more than 4. This is a large value compared to our previous work. In addition, we not only evaluated the performance of the transistors, but also investigated whether they could be used as logic circuits. It was confirmed that the logic circuit composed of the thread transistor also operated correctly and stably for a long period of time. It was also confirmed that the output changed in response to weak external forces. These results indicate that it is a flexible transistor that can be used in a wide range of applications such as logic circuits and sensors.

First demonstration of Sn diffusion into gallium oxide from poly-tetraallyl tin deposited by initiated chemical vapor deposition by thermal treatment

Gallium oxide (Ga2O3) is attracting attention as a next-generation semiconductor material for power device because it has a wide energy band gap and high breakdown electric field. We deposited a Sn polymer, poly-tetraallyl tin, on Ga2O3samples using a disclosed initiated chemical vapor deposition (iCVD) process. The Sn dopant of the Sn polymer layer is injected into the Ga2O3through a heat treatment process. Diffusion model of Sn into the Ga2O3is proposed through secondary ion mass spectroscopy analysis and bond dissociation energy. The fabricated device exhibited typical n-type field-effect transistor (FET) behavior. Ga2O3Sn-doping technology using iCVD will be applied to 3D structures and trench structures in the future, opening up many possibilities in the Ga2O3-based power semiconductor device manufacturing process.

Multi-objective optimization and inverse design of complementary field-effect transistor using combined approach of machine learning and non-dominated sorting genetic algorithms for next-generation semiconductor devices

Complementary field-effect transistors (CFETs), which are structures in which different types of transistors are vertically stacked with a shared control gate, are being focused on for continuing to satisfy Moore's law by overcoming the limitations in pitch scaling. The structures of semiconductor devices become more complex as technology node shrinks, and interrelated multivariate parameters increase. In addition, predicting problems and proposing solutions by identifying complex patterns within extensive data collected for emerging semiconductor designs pose significant computational challenges and are inherently difficult. As a breakthrough in design technology co-optimization for advanced devices, this study developed a novel optimization framework integrating technology computer-aided design simulations, machine learning, and non-dominated sorting genetic algorithms. The developed framework provides unbiased optimal solutions, even in a high-dimensional objective space, while considering the tradeoff relationships between multiple variables. In addition, it enables inverse design to identify the design parameters of devices that satisfy specific electrical performance criteria using only a forward model, while achieving an error rate of less than 2%. Using this framework, we analyzed the operational mechanism of CFETs by comparing the inverse designs of various devices. This novel approach is particularly important when the design space is complex and extensive and is well suited for developing devices that emerge with technological advancements in the semiconductor industry.

Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT

In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed and compared. The breakdown characteristics and damage mechanisms of the two devices under the injection of high-power microwaves (HPM) were studied. The variation in current density and peak temperature inside the device was analyzed. The effect of Al components at different layers of the device on the breakdown of HEMTs is discussed. The effect and law of the power damage threshold versus pulse width when the device was subjected to HPM signals was verified. It was shown that the GaN HEMT was prone to thermal breakdown below the gate, near the carrier channels. A moderate increase in the Al component can effectively increased the breakdown voltage of the device. Compared with the single heterojunction, the double heterojunction HEMT devices were more sensitive to Al components. The high domain-limiting characteristics effectively inhibited the overflow of channel electrons into the buffer layer, which in turn regulated the current density inside the device and improved the temperature distribution. The leakage current was reduced and the device switching characteristics and breakdown voltage were improved. Moreover, the double heterojunction device had little effect on HPM power damage and high damage resistance. Therefore, a theoretical foundation is proposed in this paper, indicating that double heterojunction devices are more stable compared to single heterojunction devices and are more suitable for applications in aviation equipment operating in high-frequency and high-voltage environments. In addition, double heterojunction GaN devices have higher radiation resistance than SiC devices of the same generation.

Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

In this Letter, we investigate the threshold voltage (VTH) instability of Schottky p-GaN gate high electron mobility transistors (SP-HEMTs) under high-frequency operation by a resistive-load hard switching method. The abnormal VTH instability is observed, which is different between fully and partially depleted SP-HEMTs (FD- and PD-HEMTs). Notably, for FD-HEMT, VTH shifts positively with effective stress time. However, the VTH instability in PD-HEMT is more complex. At low VGS (e.g., 3 V) and high VGS (e.g., 6 V), VTH shifts positively with stress time consistently. Nevertheless, at intermediate VGS levels (e.g., 4 and 5 V), VTH initially shifts positively and then negatively, displaying a non-monotonous variation. Furthermore, the frequency dependence of VTH is contingent upon VGS. At low VGS, VTH exhibits a negative shift with the increase in frequency. This trend inverses when VGS exceeds 4 V. And it should be noted that the extracted VTH under high-frequency operation is lower than their quasi-static values for both transistor types. This work depicts the physical process and mechanism of the abnormal VTH instability; different from the quasi-static case, hole accumulation effects will be enhanced due to the high dV/dt, which results in a lower VTH. The distinct VTH behaviors of FD- and PD-HEMTs are closely related to the trapping effects, as well as hole accumulation and insufficiency, within the two different p-GaN gate layers.

Location-Selective Work Function Engineering by Self-Assembled Monolayers.

Control over specific interfaces in devices represents a key challenge for modern organic electronics and photovoltaics. Such control is frequently gained by the use of self-assembled monolayers (SAMs), which, by selection of a proper anchoring group, are generally discriminative with respect to different materials but are not selective between different areas of the same material. In particular, selective tailoring of the work function may be useful for different functional devices in a circuit. Here we demonstrate an approach for solving this problem, opening a way to function-selective electrostatic engineering of chemically identical areas, such as source and drain electrodes in a specific type of organic transistor and, more importantly, the electrodes in different types of organic devices, such as p- and n-channel transistors, located on the same circuitry board. The approach is based on the ultraviolet-light-promoted exchange reaction of SAMs on gold, a standard electrode material in organic electronics.

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

AbstractThe exponential development in quantum phenomena is directly correlated with the decreasing size of nano‐semiconductor transistors. Consequently, the use of a quantum structure that deviates from traditional transistor types becomes imperative. Electrostatically defined nanoscale devices within 2D semiconductor heterostructures serve as foundational elements for diverse quantum electrical circuits. Van der Waals heterostructures, distinguished by atomically flat interfaces and inherent 2D characteristics, offer advantages such as large‐scale uniformity, flexibility, and portability over conventional bulk semiconductor heterostructures. Herein, the intricate electronic behavior of a MoS2/WSe2 encapsulated heterostructure governed by split‐gate and middle‐gate configurations is investigated, revealing a distinctive step‐like current profile at a low temperature of 77 K. The observed four regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions, coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the phenomena emphasizes the role of thermal effects on carrier scattering mechanisms. In addition, the pinch‐off characteristics with different temperatures, middle‐gate voltages, and drain biases are explored. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures and holds promise for the development of advanced electronic devices with tailored confinement for enhanced functionalities.

A Two-Stage Sub-Threshold Voltage Reference Generator Using Body Bias Curvature Compensation for Improved Temperature Coefficient

Leakage diodes cause deviations in the thermal drift of ultra-low-power two-transistor (2T) reference circuits, resulting in either convex or concave output voltages against temperature, depending on the reference transistor types (n-type/p-type). This paper investigates the combined application of the convexity and concavity properties exhibited by the output voltage of complementary 2T references, one n-type and one p-type. By exploiting the body bias effect, this approach mitigates variations in the output reference voltage caused by temperature fluctuations. Software optimization is also used to obtain the required aspect ratios after formulating the required criteria for drain-induced barrier lowering (DIBL) elimination in the first stage. The performance of the proposed reference is evaluated by post-layout Monte Carlo simulations. In the range of 0 °C to 100 °C, the output reference voltage has an average temperature coefficient (TC) of 26.7 ppm/°C without any temperature trim. The output reference voltage is 195.5 mV with a standard deviation of 13.6 mV. The line sensitivity (LS) is 17.1 ppm/V in the supply voltage range of 0.5 V to 2.1 V at 25 °C. At 25 °C and 0.5 V, the power consumption is 28.8 pW, increasing to a maximum of 1.3 nW at 100 °C and 2.1 V.

Monolithic Integration of GaN-Based Transistors and Micro-LED.

Micro-LED is considered an emerging display technology with significant potential for high resolution, brightness, and energy efficiency in display applications. However, its decreasing pixel size and complex manufacturing process create challenges for its integration with driving units. Recently, researchers have proposed various methods to achieve highly integrated micro-structures with driving unit. Researchers take advantage of the high performance of the transistors to achieve low power consumption, high current gain, and fast response frequency. This paper gives a review of recent studies on the new integration methods of micro-LEDs with different types of transistors, including the integration with BJT, HEMT, TFT, and MOSFET.

Manufacturing and characterization of CMOS-MEMS magnetic field microsensors with isolated cavities

The study investigates a magnetic field (MF) microsensor with isolated cavities manufactured utilizing complementary metal oxide semiconductor (CMOS)-microelectromechanical system technology. This microsensor, which is a type of magnetic transistor, comprises four identical magnetic sensing elements, each featuring an emitter, a base, two collectors, and an additional collector. The magnetic transistor operates on the principles of the Lorentz force. This force is employed to modulate the electrical properties of the transistor, responding to changes in the surrounding MF. The MF microsensor chip is fabricated using the commercial CMOS process. Upon completing the CMOS process, post-processing is employed to etch the silicon substrate of the microsensor chip, generating isolated cavities on the silicon substrate. These isolated cavities effectively mitigate substrate leakage current, enhancing the sensitivity of the MF microsensor. The experimental results reveal that the sensitivity of the microsensor without isolated cavities is 60 mV T−1. In contrast, the microsensor with isolated cavities exhibits a sensitivity of 121 mV T−1. A comparison between microsensors with and without isolated cavities depicts that the sensitivity of the MF microsensor with isolated cavities doubled.

Variations in the characteristics of low-voltage logic gates based on vertical silicon nanotransistors with a conical channel

The issues of numerical simulation of fluctuations in the electro-physical characteristics of low-voltage logic gates based on silicon vertical nanotransistors with a surrounding gate with a conical geometry are discussed. Instrumentation and technological models of n- and p-types of conductivity of conical nanotransistors have been developed for the case when the conical working area is set as follows. On the source side, for a large diameter, the condition for suppressing short-channel effects is not fulfilled, and on the drain side, for a small diameter, it is fulfilled. Such transistor structures in the control voltage range from 0 to 0.6 V are characterized by a higher transistor current, a low leakage current and a slope of the subthreshold characteristic close to the theoretical limit. Prototypes of transistors with optimal parameters for the synthesis of logic gates with a gate length of 25 nm and a working area diameter ratio of 8.5/10 nm have been selected. The fluctuation range of the drain current is distributed according to the normal law for both types of transistors with an average of 12.25 µA for the n-type and 6.5 µA for the p-type and a standard deviation of 19.3. The total spread is 3.06 µA and 1.45 µA, or 25% and 22%, respectively. To offset the influence of the considered mechanisms, it is recommended to limit the level of doping of the drain/source regions and use relatively large cross-sections of the working area from the range of possible ones. This will ensure stable electro-physical characteristics of transistors with high parry of short-channel effects. An instrument-technological model of an inverter based on vertically arranged n- and p-type transistors with an optimized diameter ratio has been developed. Variations of electro-physical characteristics in the range of control voltages 0...0.6 V and a clock frequency of 20 GHz are numerically investigated. In all cases, the prototypes demonstrate picosecond delays and low power consumption. The valve model predicts a general fluctuation of switching times of 18% at average values of 1.6 and 0.8 ps, respectively, active power of 16% at an average value of 0.2 µW and static power of 11% at an average value of 0.7 pW. The results of the study can be used in the design of digital circuits to expand the SOA zone.

Magnetoresistive-coupled transistor using the Weyl semimetal NbP

Semiconductor transistors operate by modulating the charge carrier concentration of a channel material through an electric field coupled by a capacitor. This mechanism is constrained by the fundamental transport physics and material properties of such devices—attenuation of the electric field, and limited mobility and charge carrier density in semiconductor channels. In this work, we demonstrate a new type of transistor that operates through a different mechanism. The channel material is a Weyl semimetal, NbP, whose resistivity is modulated via a magnetic field generated by an integrated superconductor. Due to the exceptionally large electron mobility of this material, which reaches over 1,000,000 cm2/Vs, and the strong magnetoresistive coupling, the transistor can generate significant transconductance amplification at nanowatt levels of power. This type of device can enable new low-power amplifiers, suitable for qubit readout operation in quantum computers.

Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection.

In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally assessed using a quantum simulation based on the self-consistent solutions of the mode space non-equilibrium Green's function (NEGF) formalism coupled with the Poisson's equation considering ballistic transport conditions. The proposed multi-gas nanosensor is endowed with two top gates ensuring both reservoirs' doping and multi-gas sensing. The investigations have included the IDS-VGS transfer characteristics, the gas-induced electrostatic modulations, subthreshold swing, and sensitivity. The order of change in drain current has been considered as a sensitivity metric. The underlying physics of the proposed JLGNR TFET-based multi-gas nanosensor has also been studied through the analysis of the band diagrams behavior and the energy-position-resolved current spectrum. It has been found that the gas-induced work function modulation of the source (drain) gate affects the n-type (p-type) conduction branch by modulating the band-to-band tunneling (BTBT) while the p-type (n-type) conduction branch still unaffected forming a kind of high selectivity from operating regime point of view. The high sensitivity has been recorded in subthermionic subthreshold swing (SS < 60 mV/dec) regime considering small gas-induced gate work function modulation. In addition, advanced simulations have been performed for the detection of two different types of gases separately and simultaneously, where high-performance has been recorded in terms of sensitivity, selectivity, and electrical behavior. The proposed detection approach, which is viable, innovative, simple, and efficient, can be applied using other types of junctionless tunneling field-effect transistors with emerging channel nanomaterials such as the transition metal dichalcogenides materials. The proposed JLGNRTFET-based multi-gas nanosensor is not limited to two specific gases but can also detect other gases by employing appropriate gate materials in terms of selectivity.

System-Based Protection Method for High-Voltage Pulse Generator Switching Units in Biomass Electroporation

Background High-voltage pulsed electric field (PEF) technology has emerged as a promising technique for enhancing cell membrane permeabilization for biotechnological and medical applications. Given the parametric instability and low resistivity of biomass when used it as an electrical load, it is imperative for the switching unit to meet specific requirements in terms of load capacity and protection against overloads and short circuits. Methods To construct generators capable of producing high-voltage pulses in the microsecond and millisecond duration ranges, we are incorporating a switching unit that employs a hardware-software method to safeguard critical transistors against overloads and short-circuit currents. Our strategy revolves around utilizing the energy storage capacitor (ESC) both as a means of energy storage and as a current sensor. By monitoring the voltage drop during discharge, we can accurately estimate current parameters. The occurrence of an excessively rapid discharge from the ESC serves as an indicator of a short circuit. The microcontroller calculates ESC discharge limits based on preset parameters within a defined timeframe. Should this limit be exceeded, the system promptly interrupts to address the pulse responsible for the short circuit and halts the further supply of remaining pulses to the load. This sophisticated approach ensures the protection and integrity of the system in the face of potential overloads or short circuits. Results Applying a systemic approach in the design of the presented implementation of protection for key transistors in the switching node from overload and short-circuit current for high-voltage pulse generators (HVPG) in the microsecond and millisecond duration ranges allows for a simpler circuit solution. In this case, the system approach also provides a unified control principle when implementing the considered option for organizing protection, regardless of the number and type of transistors or solid-state switching modules used and connected in parallel. Conclusions The configuration and protective circuitry presented in the article are specifically tailored for shielding switching elements from short-circuit currents, with a primary focus on their application in high-voltage pulse generators (HVPG). These generators are commonly employed in the high-voltage pulse treatment of diverse and unstable loads during the electroporation of biomass. The technical solution expounded in the article is intended for use in the switching nodes of HVPG, particularly those with discharge circuits constructed based on a direct capacitive discharge scheme. Notably, this protection configuration introduces local innovation and is characterized by the circuit's simplicity, achieved through the effective utilization of existing system resources. This protective variant for HVPG switches is particularly well-suited for devices utilized in versatile technological installations with relatively lower performance levels.