type-II InAs Research Articles

Mid-infrared photoluminescence revealing internal quantum efficiency enhancement of type-I and type-II InAs core/shell nanowires: publisher's note.

This publisher's note contains corrections to Opt. Lett.47, 5208 (2022)10.1364/OL.473154.

Mid-infrared photoluminescence revealing internal quantum efficiency enhancement of type-I and type-II InAs core/shell nanowires.

Internal quantum efficiency (IQE) is an important figure of merit for photoelectric applications. While the InAs core/shell (c/s) nanowire (NW) is a promising solution for efficient quantum emission, the relationship between the IQE and shell coating remains unclear. This Letter reports mid-infrared PL measurements on InAs/InGaAs, InAs/AlSb, and InAs/GaSb c/s NWs, together with bare InAs NWs as a reference. Analyses show that the IQE is depressed by a shell coating at 9 K but gets improved by up to approximately 50% for the InGaAs shell coating at 40-140 K and up to approximately 20% beyond 110 K for the AlSb shell. The effect is ascribed not only to the crystal quality but more importantly to the radial band alignment. The result indicates the high-temperature IQE improvement of the type-I and type-II c/s NWs and the appropriateness of the mid-infrared PL analyses for narrow-gap NW evaluation.

Quantum Dot Phase Transition Simulation with Hybrid Quantum Annealing via Metropolis-Adjusted Stochastic Gradient Langevin Dynamics

We report a hybrid quantum-classical simulation approach for simulating the optical phase transition observed experimentally in the ultrahigh-density type-II InAs quantum dot array. A hybrid simulation scheme, which contains stochastic gradient Langevin dynamics (a well-known Bayesian machine learning algorithm for big data) along with adiabatic quantum annealing, is developed to reproduce the experimentally observed phase transition. By implementing the simulation scheme into a quantum circuit, we successfully verified the phase transition observed in the experiment. Our work demonstrates for the first time the feasibility of hybridizing quantum computation with classical Langevin dynamics for the analysis of carrier dynamics and quantum phase transition of the quantum dot.

Dark current improvement of the type-II InAs / GaSb superlattice photodetectors by using a gate bias control

The dark current of a type-II InAs/GaSb strained layer superlattice photodiode with an n-i-p structure is reduced by using an active gate bias technique. To make the gate structure on the mesa sidewall of the photodiode, we used Si3N4 and Ti/Au as a dielectric film and a gate metal, respectively. At 77 K, the dark current density of the photodiode with a gate bias (VG = −30 V) applied on the mesa side wall is reduced by more than one order of magnitude compared to the dark current density at zero gate bias. At 77 K, the product of the dynamic differential resistance and the area at a gate bias of −30 V shows a 12 times improvement compared to the same measurement at zero gate bias.

Tailoring of the Wave Function Overlaps and the Carrier Lifetimes in InAs/GaAs 1− xSb x Type-II Quantum Dots

Effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs 1− x Sb x layer are investigated by photoluminescence (PL) and time-resolved PL measurements. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAs 1− x Sb x layer. We find that the type-II QD structure can sustain thermal annealing up to 850 °C. In particular, we find that it is possible to manipulate between type-I and type-II recombinations in annealed QDs by using different excitation powers. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAs 1− x Sb x type-II QDs.

Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots

We report the effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1−xSbx layer. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAsSb layer. Evidences of the evolution from type-II to type-I band alignments are obtained from time-resolved and power-dependent photoluminescence measurements. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAsSb type-II QDs.

Midinfrared type-II InAs∕GaSb superlattice photodiodes toward room temperature operation

We study midinfrared type-II InAs∕GaSb superlattice p-i-n photodiodes for high temperature operation. Representative samples exhibit a 3.9μm cutoff wavelength at 250K and detectivity of 4.9×1013, 1.0×1010, and 2.4×109cmHz1∕2∕W at 78, 240, and 300K, respectively. Longer-wavelength devices exhibit a 5.2μm cutoff wavelength at 240K, and detectivity of 1.3×1013 and 1.5×109cmHz1∕2∕W at 78 and 240K, respectively. The electron beam induced current technique is used to investigate the spatially varying carrier collection efficiency contribution to the quantum efficiency at different biases and temperatures. The residual doping in the i region is determined to be 6.0×1013cm−3 (n type) at 78K. The prospect of operating focal plane arrays based on the sample studied around 240K is quite promising.

The effect of doping the M-barrier in very long-wave type-II InAs∕GaSb heterodiodes

A variation on the standard homodiode type-II superlattice with an M-barrier between the π-region and the n-region is shown to suppress the dark currents. By determining the optimal doping level of the M-superlattice, dark current densities of 4.95mA∕cm2 and quantum efficiencies in excess of 20% have been demonstrated at the moderate reverse bias of 50mV; allowing for near background-limted performance with a Johnson-noise detectivity of 3.11×1010cmHz∕W at 77K for 14.58μm cutoff wavelength for large area diodes without passivation. This is comparable to values for the state-of-the-art HgCdTe photodiodes.

Carrier dynamics of type-II InAs∕GaAs quantum dots covered by a thin GaAs1−xSbx layer

Carrier dynamics of InAs∕GaAs quantum dots (QDs) covered by a thin GaAs1−xSbx layer were investigated by time-resolved photoluminescence (PL). Both the power dependence of PL peak shift and the long decay time constants confirm the type-II band alignment at the GaAsSb–InAs interface. Different recombination paths have been clarified by temperature dependent measurements. At lower temperatures, the long-range recombination between the QD electrons and the holes trapped by localized states in the GaAsSb layer is important, resulting in a non-single-exponential decay. At higher temperatures, optical transitions are dominated by the short-range recombination with the holes confined to the band-bending region surrounding the QDs.

Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer

Carrier lifetimes have been measured for long-wavelength emitting InAs quantum dots (QDs) capped with a thin GaAsSb layer. Above a critical Sb composition, a type-II system is formed, resulting in an increase in the carrier lifetime. The carrier lifetime in a strongly type-II structure is increased by a factor ∼54 in comparison to the lifetime in a type-I structure. In addition, the type-II carrier lifetime varies across the inhomogeneously broadened ground-state emission, while the type-I QD lifetime is invariant.

Mid-IR focal plane array based on type-II InAs∕GaSb strain layer superlattice detector with nBn design

A midwave infrared camera (λc=4.2μm) with a 320×256 focal plane array (FPA) based on type-II InAs∕GaSb strain layer superlattice (SLs) has been demonstrated. The detectors consist of an nBn heterostructure, wherein the SL absorber and contact layers are separated by a Al0.2Ga0.8Sb barrier layer, which is designed to have a minimum valence band offset. Unlike a PN junction, the size of the device is not defined by a mesa etch but confined by the lateral diffusion length of minority carriers. At 77K, the FPA demonstrates a temporal noise equivalent temperature difference (NETD) of 23.8mK (Tint=16.3ms and Vb=0.7V) with a peak quantum efficiency and detectivity at 3.8μm equal to 52% and 6.7×1011 Jones, respectively.

NBn detectors based on InAs∕GaSb type-II strain layer superlattice

We report on a type-II InAs∕GaSb strain layer superlattice photodetector using a nBn design with cutoff wavelength of ∼4.8μm at 250K. The surface component of dark current was eliminated. Using a shallow isolation etch, low temperature dark current was reduced by two orders of magnitude compared with conventional photodiode processing. Dark current densities were equal to 2.3×10−6 and 3.1×10−4A∕cm2 (Vb=0.1V, T=77K) for detectors with shallow isolation etch and conventional defined mesa, respectively. Quantum efficiency, responsivity, and spectral detectivity D* of the device are presented.

High quantum efficiency two color type-II InAs∕GaSb n-i-p-p-i-n photodiodes

A n-i-p-p-i-n photodiode based on type-II InAs∕GaSb superlattice was grown on a GaSb substrate. The two channels, with respective 50% of responsivity cutoff wavelengths at 7.7 and 10μm, presented quantum efficiencies (QEs) of 47% and 39% at 77K. The devices can be operated as two diodes for simultaneous detection or as a single n-i-p-p-i-n detector for sequential detection. In the latter configuration, the QEs at 5.3 and 8.5μm were measured as high as 40% and 39% at 77K. The optical cross-talk between the two channels could be reduced from 0.36 to 0.08 by applying a 50mV bias.

Substrate removal for high quantum efficiency back side illuminated type-II InAs∕GaSb photodetectors

A substrate removal technique using an InAsSb etch stop layer improves by a factor of 2 the quantum efficiency of back side illuminated type-II InAs∕GaSb superlattice photodetectors. After etching of the GaSb substrate with a CrO3 based solution, the quantum efficiency of the diodes presents Fabry-Pérot oscillations averaging at 56%. Due to the confinement of the infrared light inside the devices, the quantum efficiency for certain devices reaches 75% at 8.5μm. The implementation of this new technique to a focal plane array resulted in a decrease of the integration time from 0.23to0.08ms.

Passivation of type-II InAs∕GaSb double heterostructure

Focal plane array fabrication requires a well passivated material that is resistant to aggressive processes. The authors report on the ability of type-II InAs∕GaSb superlattice heterodiodes to be more resilient than homojunctions diodes in improving sidewall resistivity through the use of various passivation techniques. The heterostructure consisting of two wide band gap (5μm) superlattice contacts and a low band gap active region (11μm) exhibits an R0A averaging of 13Ωcm2. The devices passivated with SiO2, Na2S and SiO2 or polyimide did not degrade compared to the unpassivated sample and the resistivity of the sidewalls increased to 47kΩcm.

N B n structure based on InAs∕GaSb type-II strained layer superlattices

The authors report on a type-II InAs∕GaSb strained layer superlattice (SLS) photodetector using an nBn design that can be used to eliminate both Shockley-Read-Hall generation currents and surface recombination currents, leading to a higher operating temperature. We present such a SLS based structure with a cutoff wavelength of 5.2μm at room temperature. Processed devices exhibited a quantum efficiency around 18%, and a shot-noise-limited specific detectivity ∼109Jones at 4.5μm and 300K, which are comparable to the state of the art values reported for p-i-n photodiodes based on strained layer superlattices.

Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

The excitation power dependence of the ground and excited state transitions in type-II InAs-GaAs0.78Sb0.22 quantum dot structure has been studied. Both transitions exhibit a strong blueshift with increasing excitation power but their separation remains constant. This behavior indicates a carrier-induced electric field oriented predominantly along the growth axis, which requires the holes to be localized in the GaAsSb above quantum dots. An accelerated blueshift of the ground state emission is observed once the excited state in the dots starts to populate. This behavior can be explained by a smaller spontaneous recombination coefficient for the excited state transition.

Near bulk-limited R0A of long-wavelength infrared type-II InAs∕GaSb superlattice photodiodes with polyimide surface passivation

Effective surface passivation of type-II InAs∕GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment nor time, has been prepared by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer. Passivated photodiodes, with dimensions ranging from 400×400to25×25μm2, with a cutoff wavelength of ∼11μm, exhibited near bulk-limited R0A values of ∼12Ωcm2, surface resistivities in excess of 104Ωcm, and very uniform current-voltage behavior at 77K.

Very high quantum efficiency in type-II InAs∕GaSb superlattice photodiode with cutoff of 12μm

The authors report the dependence of the quantum efficiency on device thickness of type-II InAs∕GaSb superlattice photodetectors with a cutoff wavelength around 12μm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12μm cutoff wavelength photodiodes with a π-region thickness of 6.0μm. The R0A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2×1011cmHz∕W).

Surface recombination velocity reduction in type-II InAs∕GaSb superlattice photodiodes due to ammonium sulfide passivation

The surface recombination velocity (SRV) of minority electrons in a type-II InAs∕GaSb superlattice photodiode is quantitatively investigated using the electron beam induced current technique and its value used to evaluate the effects of two different passivation methods. Before passivation, the SRV was determined to be (5.0±0.2)×104cm∕s. The SRVs of two samples passivated at room temperature are compared with that of the unpassivated sample. One passivation method, using a neutralized (NH4)2S solution for 60min, reduces the SRV by a factor of 2. The other passivation method, using 4% (NH4)2S solution for 30min, reduces the SRV by more than one order of magnitude.