Abstract
We report on a type-II InAs∕GaSb strain layer superlattice photodetector using a nBn design with cutoff wavelength of ∼4.8μm at 250K. The surface component of dark current was eliminated. Using a shallow isolation etch, low temperature dark current was reduced by two orders of magnitude compared with conventional photodiode processing. Dark current densities were equal to 2.3×10−6 and 3.1×10−4A∕cm2 (Vb=0.1V, T=77K) for detectors with shallow isolation etch and conventional defined mesa, respectively. Quantum efficiency, responsivity, and spectral detectivity D* of the device are presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
