Two-dimensional Van Der Waals Heterostructures Research Articles

Electronic and optical properties of the GeS/GeSe heterostructure tuned by in-plane strain

Constructing new two-dimensional (2D) van der Waals (vdW) heterostructures has been widely employed as a convenient and effective strategy for tuning the optoelectronic properties, which is of great significance for applications in integrated nano-optoelectronic devices. In this work, we design a GeS/GeSe vdW heterostructure and systematically investigate its electronic and optical properties by using first-principles calculations. Our results indicate that the pristine GeS/GeSe heterostructure possesses an indirect band gap (∼0.98 eV) and exhibits an intrinsically type-I band alignment. Furthermore, the optoelectronic properties of the GeS/GeSe heterostructure can be effectively modulated by applying in-plane strain. Specifically, an indirect to direct band gap transition and a type-I to type-II band alignment transition can be synchronously realized, when the tensile strain along zigzag direction reaches 2%. Furthermore, the calculated dielectric function also reveals an obvious strain effect on the optical properties of the GeS/GeSe heterostructure. The light absorption coefficient of the GeS/GeSe heterostructure along the zigzag direction can reach to 106 cm−1 level, as the compressive in-plane strain reaches −5%. These findings are expected to play a guidance role in the future design of the optoelectronic devices based on 2D anisotropic heterostructures.

Two-Dimensional SnSe2(1-x)S2x/MoTe2 Antiambipolar Transistors with Composition Modulation for Multivalued Inverters.

Two-dimensional (2D) van der Waals heterostructures that embody the electronic characteristics of each constituent material have found extensive applications. Alloy engineering further enables the modulation of the electronic properties in these structures. Consequently, we envisage the construction and modulation of composition-dependent antiambipolar transistors (AATs) using van der Waals heterostructures and alloy engineering to advance multivalued inverters. In this work, we calculate the electron structures of SnSe2(1-x)S2x alloys and determine the energy band alignment between SnSe2(1-x)S2x and 2H-MoTe2. We present a series of vertical AATs based on the SnSe2(1-x)S2x/MoTe2 type-III van der Waals heterostructure. These transistors exhibit composition-dependent antiambipolar characteristics through the van der Waals heterostructure, except for the SnSe2/MoTe2 transistor. The peak current (Ipeak) decreases from 43 nA (x = 0.25) to 0.8 nA (x = 1) at Vds = -2 V, while the peak-to-valley current ratio (PVR) increases from 4.5 (x = 0.25) to 6.7 × 103 (x = 1) with a work window ranging from 30 to 47 V. Ultimately, we successfully apply several specific SnSe2(1-x)S2x/MoTe2 devices in binary and ternary logic inverters. Our results underscore the efficacy of alloy engineering in modulating the characteristics of AATs, offering a promising strategy for the development of multivalued logic devices.

A Universal In-Situ Interfacial Growth Strategy for Various MXene-Based van der Waals Heterostructures with Uniform Heterointerfaces: The Efficient Conversion from 3D Composite to 2D Heterostructures.

Two-dimensional (2D) van der Waals heterostructures endow individual 2D material with the novel functional structures, intriguing compositions, and fantastic interfaces, which efficiently provide a feasible route to overcome the intrinsic limitations of single 2D components and embrace the distinct features of different materials. However, the construction of 2D heterostructures with uniform heterointerfaces still poses significant challenges. Herein, a universal in-situ interfacial growth strategy is designed to controllably prepare a series of MXene-based tin selenides/sulfides with 2D van der Waals homogeneous heterostructures. Molten salt etching by-products that are usually recognized as undesirable impurities, are reasonably utilized by us to efficiently transform into different 2D nanostructures via in-situ interfacial growth. The obtained MXene-based 2D heterostructures present sandwiched structures and lamellar interlacing networks with uniform heterointerfaces, which demonstrate the efficient conversion from 3D composite to 2D heterostructures. Such 2D heterostructures significantly enhance charge transfer efficiency, chemical reversibility, and overall structural stability in the electrochemical process. Taking 2D-SnSe2/MXene anode as a representative, it delivers outstanding lithium storage performance with large reversible capacities and ultrahigh capacity retention of over 97% after numerous cycles at 0.2, 1.0, and 10.0 Ag-1 current density, which suggests its tremendous application potential in lithium-ion batteries.

Highly stable two-dimensional Janus Transition Metal Dichalcogenide-Based van der Waals heterostructures for exceptional solar cell performance

The development and utilization of solar energy are extremely important for alleviating energy and environmental problems. Herein, we comprehensively fabricated a series of two-dimensional Janus MXY-based van der Waals heterostructures (M=Mo, W; X, Y=S, Se, Te, and X≠Y) and thoroughly investigated their potential applications in solar cells using first-principles density functional theory. Further analysis identifies 20 heterostructures with power conversion efficiencies (PCEs) exceeding 20 %. Additionally, the impact of spin-orbit coupling (SOC) effects and intrinsic dipole correction on band structures and PCEs is examined. Particularly noteworthy are the WSSe/WSeTe SeSe BB and WSeTe/WSTe TeTe BB' vdWHs, exhibiting superior PCEs of 19.25 % (23.51 %) and 21.53 % (20.49 %) with (without) SOC effects and dipole correction, alongside minimal exciton binding energies (0.36 and 0.32 eV), excellent stability, and high light absorption coefficients (105∼106 cm−1). These outstanding values surpass most reported results. These findings underscore the potential of Janus transition metal dichalcogenide (TMD) vdWHs, particularly WSSe/WSeTe SeSe BB and WSeTe/WSTe TeTe BB' configurations, for advanced solar cell applications, offering valuable theoretical insights for future experimental investigations.

Symmetry-breaking-enhanced power conversion efficiency of 2D van der Waals heterostructures

Symmetry-breaking plays a crucial role in determining the property and functionality of materials. Here, we demonstrate that symmetry-breaking can dramatically enhance the power conversion efficiency (PCE) of a two-dimensional (2D) van der Waals (vdW) heterostructure solar cell by taking a γ-phosphorus-carbide (PC)-based vdW heterostructure as a model. Thanks to its four-atom-layer structure of γ-PC, both alternately arranging P and C atoms to form a Janus structure and sliding C atom layer to change space group are two effective methods to break the symmetry. We find that in comparison with a symmetric configuration, the PCE of γ-PC/MoS2N4 with symmetry-breaking could be increased by 257.2% and 270% via forming a Janus structure and the change in space group, respectively. Particularly, the PCE of symmetry-broken γ-PC/MoSi2N4 can be further increased to 21.35% under an appropriate tensile strain, which could be attributed to small conduction band offset between constituent monolayers and suitable donor bandgap. Our study showcases that tuning the symmetry of multi-atom-layer 2D materials is an effective strategy to realize enhancement of the performance for 2D materials-based optoelectronic devices.

Large-Scale Direct Growth of Monolayer MoS2 on Patterned Graphene for van der Waals Ultrafast Photoactive Circuits.

Two-dimensional (2D) van der Waals heterostructures combine the distinct properties of individual 2D materials, resulting in metamaterials, ideal for emergent electronic, optoelectronic, and spintronic phenomena. A significant challenge in harnessing these properties for future hybrid circuits is their large-scale realization and integration into graphene interconnects. In this work, we demonstrate the direct growth of molybdenum disulfide (MoS2) crystals on patterned graphene channels. By enhancing control over vapor transport through a confined space chemical vapor deposition growth technique, we achieve the preferential deposition of monolayer MoS2 crystals on monolayer graphene. Atomic resolution scanning transmission electron microscopy reveals the high structural integrity of the heterostructures. Through in-depth spectroscopic characterization, we unveil charge transfer in Graphene/MoS2, with MoS2 introducing p-type doping to graphene, as confirmed by our electrical measurements. Photoconductivity characterization shows that photoactive regions can be locally created in graphene channels covered by MoS2 layers. Time-resolved ultrafast transient absorption (TA) spectroscopy reveals accelerated charge decay kinetics in Graphene/MoS2 heterostructures compared to standalone MoS2 and upconversion for below band gap excitation conditions. Our proof-of-concept results pave the way for the direct growth of van der Waals heterostructure circuits with significant implications for ultrafast photoactive nanoelectronics and optospintronic applications.

Insight into graphene/boron arsenide heterostructure used for high-performance lithium-ion battery anode materials: The first principles study

Two-dimensional (2D) van der Waals (vdW) heterostructures demonstrate potential applications in Lithium-ion batteries (LIBs) characterized by their elevated energy storage capacity and extended operational longevity as anode materials. The structures and electronic properties of graphene/boron arsenide (Gr/BAs) heterostructures, along with the adsorption and migration of lithium (Li) atoms within the structures, are methodically analyzed through first-principles studies underpinned by density functional theory. Our calculations indicate the metallic Gr/BAs heterostructures have the structural stability, where their mechanical strength is confirmed from the elastic constant. Its diffusion barrier of Li atoms (0.25 eV) is superior among similar anode materials. The Li atoms' diffusion coefficient within the Gr/BAs heterostructure at 300 K (1.27 × 10−10 m2/s) exceeds that observed in Gr (2.0×10−11 m2/s). Besides, the presence of Gr assists in maintaining the open-circuit voltage (OCV) of Gr/BAs heterostructures in the range of 0-1 V. The theoretical specific capacity of proposed heterostructure reaches 920 mAh/g. The present calculations suggest that the Gr/BAs heterostructure could serve effectively as an anode in LIBs due to its excellent electrical conductivity, small diffusion barriers and appropriate open-circuit voltage.

Sandwiched WS2/MoTe2/WS2 Heterostructure with a Completely Depleted Interlayer for a Photodetector with Outstanding Detectivity.

Photodetectors based on two-dimensional van der Waals (2D vdW) heterostructures with high detectivity and rapid response have emerged as promising candidates for next-generation imaging applications. However, the practical application of currently studied 2D vdW heterostructures faces challenges related to insufficient light absorption and inadequate separation of photocarriers. To address these challenges, we present a sandwiched WS2/MoTe2/WS2 heterostructure with a completely depleted interlayer, integrated on a mirror electrode, for a highly efficient photodetector. This well-designed structure enhances light-matter interactions while facilitating effective separation and rapid collection of photocarriers. The resulting photodetector exhibits a broadband photoresponse spanning from deep ultraviolet to near-infrared wavelengths. When operated in self-powered mode, the device demonstrates an exceptional response speed of 22/34 μs, along with an impressive detectivity of 8.27 × 1010 Jones under 635 nm illumination. Additionally, by applying a bias voltage of -1 V, the detectivity can be further increased to 1.49 × 1012 Jones, while still maintaining a rapid response speed of 180/190 μs. Leveraging these outstanding performance metrics, high-resolution visible-near-infrared light imaging has been successfully demonstrated using this device. Our findings provide valuable insights into the optimization of device architecture for diverse photoelectric applications.

First-Principles Study on Janus-Structured Sc2CX2/Sc2CY2 (X, Y = F, Cl, Br) Heterostructures for Solar Energy Conversion.

Two-dimensional van der Waals heterostructures have good application prospects in solar energy conversion due to their excellent optoelectronic performance. In this work, the electronic structures of Sc2CF2/Sc2CCl2, Sc2CF2/Sc2CBr2, and Sc2CCl2/Sc2CBr2 heterostructures, as well as their properties in photocatalysis and photovoltaics, have been comprehensively studied using the first-principles method. Firstly, both of the three thermodynamically and dynamically stable heterostructures are found to have type-II band alignment with band gap values of 0.58 eV, 0.78 eV, and 1.35 eV. Meanwhile, the photogenerated carriers in Sc2CF2/Sc2CCl2 and Sc2CF2/Sc2CBr2 heterostructures are predicated to follow the direct Z-scheme path, enabling their abilities for water splitting. As for the Sc2CCl2/Sc2CBr2 heterostructure, its photovoltaic conversion efficiency is estimated to be 20.78%. Significantly, the light absorption coefficients of Sc2CF2/Sc2CCl2, Sc2CF2/Sc2CBr2, and Sc2CCl2/Sc2CBr2 heterostructures are enhanced more than those of the corresponding monolayers. Moreover, biaxial strains have been observed to considerably tune the aforementioned properties of heterostructures. All the theoretical results presented in this work demonstrate the application potential of Sc2CX2/Sc2CY2 (X, Y = F, Cl, Br) heterostructures in photocatalysis and photovoltaics.

A synapse with low power consumption based on MoTe2/SnS2 heterostructure

The use of two-dimensional materials and van der Waals heterostructures holds great potential for improving the performance of memristors Here, we present SnS2/MoTe2 heterostructure synaptic transistors. Benefiting from the ultra-low dark current of the heterojunction, the power consumption of the synapse is only 19 pJ per switching under 0.1 V bias, comparable to that of biological synapses. The synaptic device based on the SnS2/MoTe2 demonstrates various synaptic functionalities, including short-term plasticity, long-term plasticity, and paired-pulse facilitation. In particular, the synaptic weight of the excitatory postsynaptic current can reach 109.8%. In addition, the controllability of the long-term potentiation and long-term depression are discussed. The dynamic range (G max/G min) and the symmetricity values of the synaptic devices are approximately 16.22 and 6.37, and the non-linearity is 1.79. Our study provides the possibility for the application of 2D material synaptic devices in the field of low-power information storage.

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to −0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques.

Double Superconducting Dome of Quasi Two-Dimensional TaS2 in Non-Centrosymmetric van der Waals Heterostructure.

Two-dimensional van der Waals heterostructures (2D-vdWHs) based on transition metal dichalcogenides (TMDs) provide unparalleled control over electronic properties. However, the interlayer coupling is challenged by the interfacial misalignment and defects, which hinders a comprehensive understanding of the intertwined electronic orders, especially superconductivity and charge density wave (CDW). Here, by using pressure to regulate the interlayer coupling of non-centrosymmetric 6R-TaS2 vdWHs, we observe an unprecedented phase diagram in TMDs. This phase diagram encompasses successive suppression of the original CDW states from alternating H-layer and T-layer configurations, the emergence and disappearance of a new CDW-like state, and a double superconducting dome induced by different interlayer coupling effects. These results not only illuminate the crucial role of interlayer coupling in shaping the complex phase diagram of TMD systems but also pave a new avenue for the creation of a novel family of bulk heterostructures with customized 2D properties.

Moiré band renormalization due to lattice mismatch in bilayer graphene

We investigated the band renormalization caused by the compressive-strain-induced lattice mismatch in parallel AA stacked bilayer graphene using two complementary methods: the tight-binding approach and the low-energy continuum theory. While a large mismatch does not alter the low-energy bands, a small one reduces the bandwidth of the low-energy bands along with a decrease in the Fermi velocity. In the tiny-mismatch regime, the low-energy continuum theory reveals that the long-period moiré pattern extensively renormalizes the low-energy bands, resulting in a significant reduction of bandwidth. Meanwhile, the Fermi velocity exhibits an oscillatory behavior and approaches zero at specific mismatches. However, the resulting low-energy bands are not perfectly isolated flat, as seen in twisted bilayer graphene at magic angles. These findings provide a deeper understanding of moiré physics and offer valuable guidance for related experimental studies in creating moiré superlattices using two-dimensional van der Waals heterostructures.

First-principles study of perpendicular magnetic anisotropy of CrI3/In2Se3 Van der Waals heterostructure

Two-dimensional multiferroic van der Waals (vdW) heterostructures are promising for nanoscale and multifunctional spintronic devices. Controllable perpendicular magnetic anisotropy in vdW heterostructure often plays a central role in stabilizing ferromagnetic order and lowering energy consumption. Here, we carry out first-principles calculations for CrI3/In2Se3 vdW heterostructure and investigate how its magnetic anisotropy is interrelated to the electronic structure. We show that the semiconducting nature of CrI3 is preserved but band gap decreases in monolayer-CrI3/In2Se3 and bilayer-CrI3/In2Se3 vdW heterostructures. The magnetoelectric effect of CrI3/In2Se3 vdW heterostructure enhances the magnetic moment of CrI3, but decreases the perpendicular magnetic anisotropy of CrI3. I-p orbital coupling matrix element is noteworthy in regard to the modulation of magnetic anisotropy. The MAE contribution of Cr atom slightly enhances but is still negligible by the reason of countervailing contribution of d-orbital coupling matrix elements. By reversing the ferroelectric polarization of In2Se3, the easy magnetization axis of monolayer CrI3 can be switched. These results will help to understand the magnetic anisotropy of multiferroic vdW heterostructure and may enable the development of nonvolatile memory devices.

Hole-Doped Nonvolatile and Electrically Controllable Magnetism in van der Waals Ferroelectric Heterostructures

Electrical control of magnetism in van der Waals semiconductors is a promising step towards development of two-dimensional spintronic devices with ultralow power consumption for processing and storing information. Here, we propose a design for two-dimensional van der Waals heterostructures (vdWHs) that can host ferroelectricity and ferromagnetism simultaneously under hole doping. By contacting an InSe monolayer and forming an InSe/In2Se3 vdWH, the switchable built-in electric field from the reversible out-of-plane polarization enables robust control of the band alignment. Furthermore, switching between the two ferroelectric states (P ↑ and P ↓) of hole-doped In2Se3 with an external electric field can interchange the ON and OFF states of the nonvolatile magnetism. More interestingly, doping concentration and strain can effectively tune the magnetic moment and polarization energy. Therefore, this provides a platform for realizing multiferroics in ferroelectric heterostructures, showing great potential for use in nonvolatile memories and ferroelectric field-effect transistors.

Electric-field-controlled Schottky barriers in BSe/M2CF2 (M = Ta, W) van der Waals heterostructures: A computational study

Constructing two-dimensional (2D) van der Waals (vdW) heterostructures is regarded as an effective strategy to explore novel properties and enhance the performance of 2D materials. Herein, taking full advantage of boron selenide (BSe) and MXenes, 2D BSe/MXene vdW heterostructures are designed and their electronic and interfacial properties are investigated via first-principles calculations, by using BSe/Ta2CF2 and BSe/W2CF2 as models. The band structures of the BSe and M2CF2 (M = Ta, W) layers in the BSe/M2CF2 heterostructures are preserved quite well due to the weak vdW interlayer interaction. The Fermi level shifts towards the conduction band minimum of the BSe layer, leading to an n-type Schottky contact. Interestingly, the interface charge redistribution in BSe/W2CF2 is more pronounced compared to BSe/Ta2CF2, which can be attributed to the disparity in electronegativity between Ta and W. In particular, the Schottky barrier heights of both heterostructures vary linearly with the vertical electric field within a certain range. This allows for the tuning of the Schottky contact from n-type to p-type. However, the variation rate in BSe/W2CF2 is comparatively lower than that in BSe/Ta2CF2. Moreover, when the positive electric field exceeds 1.0 V/Å, a transition from the Schottky contact to the Ohmic contact in BSe/W2CF2 occurs, whereas the contact remains the Schottky contact in BSe/W2CF2. This work offers valuable insights into developing electronic nano-devices with tunable Schottky barriers using vdW heterostructures.

Engineering MPC-Assisted Heterojunctional Photo-Oxidation Tailored by Interfacial Design of a P-Modulated C3N4 Heterojunction for Improved Aerobic Alcohol Oxidation.

The creation of two-dimensional van der Waals (VDW) heterostructures is a sophisticated approach to enhancing photocatalytic efficiency. However, challenges in electron transfer at the interfaces often arise in these heterostructures due to the varied structures and energy barriers of the components involved. This study presents a novel method for constructing a VDW heterostructure by inserting a phosphate group between copper phthalocyanine (CuPc) and boron-doped, nitrogen-deficient graphitic carbon nitride (BCN), referred to as Cu/PO4-BCN. This phosphate group serves as a charge mediator, enabling effective charge transfer within the heterostructure, thus facilitating electron flow from BCN to CuPc upon activation. As a result, the photogenerated electrons are effectively utilized by the catalytic Cu2+ core in CuPc, achieving a conversion efficiency of 96% for benzyl alcohol (BA) and a selectivity of 98.8% for benzyl aldehyde (BAD) in the presence of oxygen as the sole oxidant and under illumination. Notably, the production rate of BAD is almost 8 times higher than that observed with BCN alone and remains stable over five cycles. The introduction of interfacial mediators to enhance electron transfer represents a pioneering and efficient strategy in the design of photocatalysts, enabling the proficient transformation of BA into valuable derivatives.

Photothermionic Effect-Assisted Ultrafast Charge Transfer in NbS2/MoS2 Heterostructure.

Two-dimensional (2D) van der Waals heterostructures (vdW HSs) composed of transition metal dichalcogenides (TMDCs) have emerged as frontrunners in the optoelectronics field, owing to their exceptional optical and electrical properties. Recent research on the intrinsic interlayer charge transfer mechanism has been primarily focused on the Type II HSs, while metal-semiconductor (MS) vertical HSs, promising for advancing photodetector technology, have received comparatively less attention. Here, we reveal the first experimental observation of photothermionic effect-assisted ultrafast interlayer charge transfer in the NbS2/MoS2 heterostructure using femtosecond transient absorption technology and first-principles calculations, effectively ignoring the Schottky barrier height. We demonstrate that within 500 fs, charge transfer occurs from NbS2 to MoS2 in the heterostructure, resulting in supplementary carrier generation in the visible spectrum when excited with infrared light below the MoS2 bandgap, at wavelengths of 1030 and 1500 nm. Such promising characteristics of 2D NbS2-semiconductor heterostructures offer a potential platform for synergistically combining low contact resistance with broadband photocarrier generation, marking a significant advancement in optoelectronics and light harvesting.

First-Principles High-Throughput Inverse Design of Direct Momentum-Matching Band Alignment van der Waals Heterostructures Utilizing Two-Dimensional Indirect Semiconductors.

Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted widespread attention in photocatalysis. Herein, we employ a novel strategy utilizing first-principles high-throughput inverse design of 2D Z-scheme heterojunctions for photocatalysis. This approach is anchored in high-throughput screening conditions, which are fundamentally based on the characteristics of carrier mechanisms influenced significantly by Z-scheme heterojunctions. A pivotal element of our screening process is the integration of the indirect-to-direct bandgap transition with momentum-matching band alignment in k-space, guiding us to combine two 2D indirect bandgap monolayers into direct Z-scheme heterojunctions characterized by pronounced interlayer excitons. Various stacking modes introduce extra and distinct degrees of freedom that can be useful for tuning the properties of heterostructures, encompassing factors such as components, stacking patterns, and sequences. We demonstrate that various stacking modes can facilitate the indirect-to-direct bandgap transition and the emergence of interlayer excitons. These findings provide exciting opportunities for designing Z-scheme heterojunctions in photocatalysis.

Ideal Photodetector Based on WS2/CuInP2S6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation.

Two-dimensional van der Waals (2D vdW) heterostructure photodetectors have garnered significant attention for their potential applications in next-generation optoelectronic systems. However, current 2D vdW photodetectors inevitably encounter compromises between responsivity, detectivity, and response time due to the absence of multilevel regulation for free and photoexcited carriers, thereby restricting their widespread applications. To address this challenge, we propose an efficient 2D WS2/CuInP2S6 vdW heterostructure photodetector by combining band engineering and ferroelectric modulation. In this device, the asymmetric conduction and valence band offsets effectively block the majority carriers (free electrons), while photoexcited holes are efficiently tunneled and rapidly collected by the bottom electrode. Additionally, the ferroelectric CuInP2S6 layer generates polarization states that reconfigure the built-in electric field, reducing dark current and facilitating the separation of photocarriers. Moreover, photoelectrons are trapped during long-distance lateral transport, resulting in a high photoconductivity gain. Consequently, the device achieves an impressive responsivity of 88 A W-1, an outstanding specific detectivity of 3.4 × 1013 Jones, and a fast response time of 37.6/371.3 μs. Moreover, the capability of high-resolution imaging under various wavelengths and fast optical communication has been successfully demonstrated using this device, highlighting its promising application prospects in future optoelectronic systems.