Two-dimensional Semimetals Research Articles

Enhanced Photobolometric Effect in an All-Semimetal van der Waals Heterostructure.

The utilization of the photobolometric effect in emerging van der Waals (vdWs) semimetallic materials shows promise for ultrabroadband photodetection, ranging from visible to terahertz frequencies. However, individual two-dimensional (2D) semimetals face a significant challenge due to their inherently high dark current and low temperature coefficient of conductance (TCC), which limits device performance. To address this issue, this study introduces an approach by creating a heterostructure using 2D semimetallic transition metal dichacolgenides (TMDs), specifically TiS2 and WTe2. Through standard transport and photocurrent measurements, the TiS2-WTe2 heterostructure demonstrates an improved photobolometric effect in the junction area at low temperatures, which can be adjusted by modifying the length of the photosensitive channel. The generated photocurrent in different areas of the device exhibits varying temperature dependencies, and the photoresponse remains detectable up to room temperature with a commendable signal-to-noise ratio. These findings offer valuable insights into the design and advancement of thin-film optoelectronic devices, with the aim of achieving exceptional performance and unique functionality.

Integrated mid-infrared sensing and ultrashort lasers based on wafer-level Td-WTe2 Weyl semimetal

There is an urgent need for infrared (IR) detection systems with high-level miniaturization and room-temperature operation capability. The rising star of two-dimensional (2D) semimetals with extraordinary optoelectronic properties can fulfill these criteria. However, the formidable challenges with regard to large-scale patterning and substrate-selective requirements limit material deposition options for device fabrication. Here, we report a convenient and straightforward eutectic-tellurization transformation method for the wafer-level synthesis of 2D type-II Weyl semimetal WTe2. The non-cryogenic WTe2/Si Schottky junction device displays an ultrawide detection range covering 10.6 μm with a high detectivity of ∼109 Jones in the mid-infrared (MIR) region and a short response time of 1.3 μs. The detection performance has surpassed most reported IR sensors. On top of that, on-chip device arrays based on Schottky junction display an outstanding MIR imaging capability without cryogenic cooling, and 2D WTe2 Weyl semimetal can serve as a saturable absorber for stable Q-switched and mode-locked laser operation applications. Our work offers a viable route for wafer-scale vdW preparation of 2D semimetals, showcasing their intriguing potential in on-chip integrated MIR detection systems and ultrafast laser photonics.

Elliptical spin textures in two-dimensional semimetals with spatially anisotropic Dzyaloshinskii-Moriya interaction

Elliptical spin textures in two-dimensional semimetals with spatially anisotropic Dzyaloshinskii-Moriya interaction

Weak Antilocalization in a Strongly Disordered Two-Dimensional Semimetal in an HgTe Quantum Well

Weak Antilocalization in a Strongly Disordered Two-Dimensional Semimetal in an HgTe Quantum Well

A Gate-Tunable Ambipolar Quantum Phase Transition in a Topological Excitonic Insulator.

Coulomb interactions among electrons and holes in 2D semimetals with overlapping valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate material in which such excitonic state uniquely combines with non-trivial band topology are atomic monolayers of tungsten ditelluride (WTe2 ), in which a 2D topological excitonic insulator (2D TEI) forms. However, the detailed mechanism of the 2D bulk gap formation in WTe2 , in particular with regard to the role of Coulomb interactions, has remained a subject of ongoing debate. Here, it shows that WTe2 is susceptible to a gate-tunable quantum phase transition, evident from an abrupt collapse of its 2D bulk energy gap upon ambipolar field-effect doping. Such gate tunability of a 2D TEI, into either n- and p-type semimetals, promises novel handles of control over non-trivial 2D superconductivity with excitonicpairing.

Optical valley separation in two-dimensional semimetals with tilted Dirac cones

Quasiparticles emerging in crystalline materials can possess a binary flavor known as the valley quantum number which can be used as a basis to encode information in an emerging class of valleytronic devices. Here we show that two-dimensional semimetals with tilted Dirac cones in the electronic band structure exhibit spatial separation of carriers belonging to different valleys under illumination. In stark contrast to gapped Dirac materials this optovalleytronic phenomenon occurs in systems with intact inversion and time-reversal symmetry that host gapless Dirac cones in the band structure, thereby retaining the exceptional graphene-like transport properties. We thus demonstrate that optical valley separation is possible at arbitrarily low photon frequencies including the deep infrared and terahertz regimes with full gate tunability via Pauli blocking. As a specific example of our theory, we predict tunable valley separation in the proposed two-dimensional tilted Dirac cone semimetal 8-Pmmn borophene for incident infrared photons at room temperature. This work highlights the potential of two-dimensional tilted Dirac cone materials as a platform for tunable broadband optovalleytronic applications.

Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe2 Dirac Semimetal.

Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) photoresponses are compliant with these requirements. However, challenges remain in scalable growth and substrate-dependence for on-chip integration. Here, we demonstrate the inch-level 2D palladium ditelluride (PdTe2) Dirac semimetal using a low-temperature self-stitched epitaxy (SSE) approach. The low formation energy between two precursors facilitates low-temperature multiple-point nucleation (∼300 °C), growing up, and merging, resulting in self-stitching of PdTe2 domains into a continuous film, which is highly compatible with back-end-of-line (BEOL) technology. The uncooled on-chip PdTe2/Si Schottky junction-based photodetector exhibits an ultrabroadband photoresponse of up to 10.6 μm with a large specific detectivity. Furthermore, the highly integrated device array demonstrates high-resolution room-temperature imaging capability, and the device can serve as an optical data receiver for IR optical communication. This study paves the way toward low-temperature growth of 2D semimetals for uncooled MIR sensing.

Universal model for electron thermal-field emission from two-dimensional semimetals

We present the theory of out-of-plane (or vertical) electron thermal-field emission from two-dimensional (2D) semimetals. We show that the current–voltage–temperature characteristic is well captured by a universal scaling relation applicable for broad classes of 2D semimetals, including graphene and its few-layer, nodal point semimetal, Dirac semimetal at the verge of topological phase transition, and nodal line semimetal. Here, an important consequence of the universal emission behavior is revealed: In contrast to the common expectation that band topology shall manifest differently in the physical observables, band topologies in two spatial dimension are indistinguishable from each other and bear no special signature in electron emission characteristics. Our findings represent the quantum extension of the universal semiclassical thermionic emission scaling law in 2D materials and provide theoretical foundations for the understanding of electron emission from cathode and charge interface transport for the design of 2D-material-based vacuum nanoelectronics.

Coupled ferroelectricity and superconductivity in bilayer Td-MoTe2.

Achieving electrostatic control of quantum phases is at the frontier of condensed matter research. Recent investigations have revealed superconductivity tunable by electrostatic doping in twisted graphene heterostructures and in two-dimensional semimetals such as WTe2 (refs. 1-5). Some of these systems have a polar crystal structure that gives rise to ferroelectricity, in which the interlayer polarization exhibits bistability driven by external electric fields6-8. Here we show that bilayer Td-MoTe2 simultaneously exhibits ferroelectric switching and superconductivity. Notably, a field-driven, first-order superconductor-to-normal transition is observed at its ferroelectric transition. Bilayer Td-MoTe2 also has a maximum in its superconducting transition temperature (Tc) as a function of carrier density and temperature, allowing independent control of the superconducting state as a function of both doping and polarization. We find that the maximum Tc is concomitant with compensated electron and hole carrier densities and vanishes when one of the Fermi pockets disappears with doping. We argue that this unusual polarization-sensitive two-dimensional superconductor is driven by an interband pairing interaction associated with nearly nested electron and hole Fermi pockets.

Charge density, atomic bonding and band structure of two-dimensional Sn, Sb, and Pb semimetals

Density functional theory (DFT) calculations were used to characterize the two-dimensional (2D) semimetals structures of Pb, Sb-α, Sb-β, and Sn obtained by geometric optimization. The results of the energy band diagrams and density of states calculations show that the 2D semimetals Pb and Sb-β possess semiconductor characteristics. The differential charge densities of Pb, Sb-α, Sb-β, and Sn the bonding state of atoms were determined by analyzing the charge density distribution. This work provides new ideas and solutions for studying the properties of chemical bonds in 2D semimetal materials.

Screening of the Coulomb interaction in C3N: Reduced dimensionality and electronic structure effects

Coulomb interactions in two-dimensional semimetals like graphene are not screened in the usual way, and sizable long-range interaction has been found. With the aim of achieving new materials with nonconventional screening, as well as, in order to investigate various effects such as reduced dimensionality and electronic band dispersion, we calculate the strength of the effective Coulomb interaction $U$ between ${p}_{z}$ electrons in recently developed hexagonal ${\mathrm{C}}_{3}\mathrm{N}$ materials from the first principles using the constrained random-phase approximation. We find that the calculated parameters in the monolayer of the ${\mathrm{C}}_{3}\mathrm{N}$ are larger than the ones in graphene and remain sizable even in metallic bilayers. Nonlocal Coulomb interactions $U(r)$ in nonmetallic ${\mathrm{C}}_{3}\mathrm{N}$ nanoribbons are almost 1 eV smaller than the ones for ${\mathrm{C}}_{3}\mathrm{N}$ monolayer. Our results show that similar to graphene, screening in hexagonal ${\mathrm{C}}_{3}\mathrm{N}$ is also nonconventional. This controversial screening of Coulomb interaction stems from the electronic structure and massless Dirac dispersion below Fermi energy, which has to be preserved for symmetry reasons in hexagonal ${\mathrm{C}}_{3}\mathrm{N}$ layers.

Diffusive transport in the lowest Landau level of disordered 2d semimetals: the mean-square-displacement approach

We study the electronic transport in the lowest Landau level of disordered two-dimensional semimetals placed in a homogeneous perpendicular magnetic field. The material system is modeled by the Bernevig–Hughes–Zhang Hamiltonian, which has zero energy Landau modes due to the material’s intrinsic Berry curvature. These turn out to be crucially important for the density of states and the static conductivity of the disordered system. We develop an analytical approach to the diffusion and conductivity based on a self-consistent equation of motion for the mean-squared displacement. The obtained value of the zero mode conductivity is close to the conductivity of disordered Dirac electrons without magnetic fields, which have zero energy points in the spectrum as well. Our analysis is applicable in a broader context of disordered two-dimensional electron gases in strong magnetic fields.Graphicabstract

Optical absorption in two-dimensional materials with tilted Dirac cones

The interband optical absorption of linearly polarized light by two-dimensional (2D) semimetals hosting tilted and anisotropic Dirac cones in the band structure is analysed theoretically. Supercritically tilted (type-II) Dirac cones are characterized by an absorption that is highly dependent on the incident photon polarization and frequency and is tunable by changing the Fermi level with a back-gate voltage. Type-II Dirac cones exhibit open Fermi surfaces and large regions of the Brillouin zone where the valence and conduction bands sit either above or below the Fermi level. As a consequence, unlike their subcritically tilted (type-I) counterparts, type-II Dirac cones have many states that are Pauli blocked even when the Fermi level is tuned to the level crossing point. We analyze the interplay of the tilt parameter with the Fermi velocity anisotropy, demonstrating that the optical response of a Dirac cone cannot be described by its tilt alone. As a special case of our general theory, we discuss the proposed 2D type-I semimetal 8-$Pmmn$ borophene. Guided by our in-depth analytics, we develop an optical recipe to fully characterize the tilt and Fermi velocity anisotropy of any 2D tilted Dirac cone solely from its absorption spectrum. We expect our paper to encourage Dirac cone engineering as a major route to create gate-tunable thin-film polarizers.

Wave-function geometry of band crossing points in two dimensions

Geometry of the wave function is a central pillar of modern solid state physics. In this work, we unveil the wave-function geometry of two-dimensional semimetals with band crossing points (BCPs). We show that the Berry phase of BCPs are governed by the quantum metric describing the infinitesimal distance between quantum states. For generic linear BCPs, we show that the corresponding Berry phase is determined either by an angular integral of the quantum metric, or equivalently, by the maximum quantum distance of Bloch states. This naturally explains the origin of the $\ensuremath{\pi}$-Berry phase of a linear BCP. In the case of quadratic BCPs, the Berry phase can take an arbitrary value between 0 and $2\ensuremath{\pi}$. We find simple relations between the Berry phase, maximum quantum distance, and the quantum metric in two cases: (i) when one of the two crossing bands is flat; (ii) when the system has rotation and/or time-reversal symmetries. To demonstrate the implication of the continuum model analysis in lattice systems, we study tight-binding Hamiltonians describing quadratic BCPs. We show that, when the Berry curvature is absent, a quadratic BCP with an arbitrary Berry phase always accompanies another quadratic BCP so that the total Berry phase of the periodic system becomes zero. This work demonstrates that the quantum metric plays a critical role in understanding the geometric properties of topological semimetals.

Emergence of massless Froḧlich polarons in two-dimensional semi-metals on polar substrates

We consider the polaron dynamics driven by Froḧlich type, long wavelength dominated electron-phonon interaction at zero temperature, for three different semi-metals: single and bilayer graphene, and semi-Dirac, all grown on polar substrates such as, SiC. Single layer graphene (henceforth called SL graphene), bilayer graphene (henceforth called BL graphene), and semi-Dirac have two dimensional band-structures with point Fermi surfaces in their natural undoped conditions. When these materials are grown on polar substrates, their electrons can interact with the optical phonons (LO) at the surface of the substrates. That gives rise to the possibility of polaron formation in the context of these semi-metals, although they themselves are non-polar. Starting from the Froḧlich type electron-phonon interaction Hamiltonian, perturbation theory is employed to calculate the self energy of the electron due to polaron formation for the three aforementioned systems. The electron self energy, or the polaron energy, calculated analytically for BL graphene, is shown to vary linearly with the electron momentum for small electron momenta. Whereas for ordinary polar crystals (both two and three dimensional), for small electron momentum, the polaron energy is quadratic leading to the mass correction of the electron, for BL graphene the polaron energy disperses linearly, rendering the massive BL graphene electrons effectively massless. Energies for Froḧlich polarons in SL graphene and semi-Dirac on polar substrates, are numerically evaluated. Also, the electron relaxation rate, related to the imaginary part of the analytically continued electron self energy expression, is calculated for the three systems.

Integrated Plasmonics: Broadband Dirac Plasmons in Borophene.

The past decade has witnessed numerous discoveries of two-dimensional (2D) semimetals and insulators, whereas 2D metals were rarely identified. Borophene, a monolayer boron sheet, has recently emerged as a perfect 2D metal with unique electronic properties. Here we study collective excitations in borophene, which exhibit two major plasmon modes with low damping rates extending from the infrared to ultraviolet regime. The anisotropic 1D plasmon originates from electronic transitions of tilted Dirac cones in borophene, analogous to that in extreme doped graphene. These features enable borophene as an integrated platform of 1D, 2D, and Dirac plasmons, promising for directional polariton transport and broadband optical communication in next-generation optoelectronic devices.

Giant nonlocality in nearly compensated two-dimensional semimetals

In compensated two-component systems in confined, two-dimensional geometries, nonlocal response may appear due to external magnetic field. Within a phenomenological two-fluid framework, we demonstrate the evolution of charge flow profiles and the emergence of a giant nonlocal pattern dominating charge transport in magnetic field. Applying our approach to the specific case of intrinsic graphene, we suggest a simple physical explanation for the experimental observation of giant nonlocality. Our results provide an intuitive way to predict the outcome of future experiments exploring the rich physics of many-body electron systems in confined geometries as well as to design possible applications.

Films of rhombohedral graphite as two-dimensional topological semimetals

Topologically non-trivial states appear in a number of materials ranging from spin-orbit-coupling driven topological insulators to graphene. In multivalley conductors, such as mono- and bilayer graphene, despite a zero total Chern number for the entire Brillouin zone, Berry curvature with different signs concentrated in different valleys can affect the material’s transport characteristics. Here we consider thin films of rhombohedral graphite, which appear to retain truly two-dimensional properties up to tens of layers of thickness and host two-dimensional electron states with a large Berry curvature, accompanied by a giant intrinsic magnetic moment carried by electrons. The size of Berry curvature and magnetization in the vicinity of each valley can be controlled by electrostatic gating leading to a tuneable anomalous Hall effect and a peculiar structure of the two-dimensional Landau level spectrum.

Interfacial Interactions in van der Waals Heterostructures of MoS2 and Graphene.

Interfacial coupling between neighboring layers of van der Waals heterostructures (vdWHs), formed by vertically stacking more than two types of two-dimensional materials (2DMs), greatly affects their physical properties and device performance. Although high-resolution cross-sectional scanning tunneling electron microscopy can directly image the atomically sharp interfaces in the vdWHs, the interfacial coupling and lattice dynamics of vdWHs formed by two different types of 2DMs, such as semimetal and semiconductor, are not clear so far. Here, we report the ultralow-frequency Raman spectroscopy investigation on interfacial couplings in the vdWHs formed by graphene and MoS2 flakes. Because of the significant interfacial layer-breathing couplings between MoS2 and graphene flakes, a series of layer-breathing modes with frequencies dependent on their layer numbers are observed in the vdWHs, which can be described by the linear chain model. It is found that the interfacial layer-breathing force constant between MoS2 and graphene, α0⊥(I) = 60 × 1018 N/m3, is comparable with the layer-breathing force constant of multilayer MoS2 and graphene. The results suggest that the interfacial layer-breathing couplings in the vdWHs formed by MoS2 and graphene flakes are not sensitive to their stacking order and twist angle between the two constituents. Our results demonstrate that the interfacial interlayer coupling in vdWHs formed by two-dimensional semimetals and semiconductors can lead to new lattice vibration modes, which not only can be used to measure the interfacial interactions in vdWHs but also is beneficial to fundamentally understand the properties of vdWHs for further engineering the vdWHs-based electronic and photonic devices.

Ferromagnetism in chiral multilayer two-dimensional semimetals

We calculate the temperature-dependent long-range magnetic coupling in the presence of dilute concentrations of random magnetic impurities in chiral multilayer two-dimensional semimetals, i.e., undoped intrinsic multilayer graphene. Assuming a carrier-mediated indirect Ruderman-Kittel-Kasuya-Yosida exchange interaction among the well-separated magnetic impurities with the itinerant carriers mediating the magnetic interaction between the impurities, we investigate the magnetic properties of intrinsic multilayer graphene using an effective chiral Hamiltonian model. We find that due to the enhanced density of states in the rhombohedral stacking sequence of graphene layers, the magnetic ordering of multilayer graphene is ferromagnetic in the continuum limit. The ferromagnetic transition temperature is calculated using a finite-temperature self-consistent field approximation and found to be within the experimentally accessible range for reasonable values of the impurity-carrier coupling.