Two-dimensional Semiconductor Heterostructures Research Articles

Effects of anisotropy on the electronic structure and nonlinear optical rectification in a quantum dot with hydrogen molecular ion

In this study, the effects of anisotropy and quantum dot size on energy levels and nonlinear optical rectification of a D_{2}^{ + } molecular complex confined to a two-dimensional quantum dot are investigated. The energy eigenvalues and corresponding eigenfunctions of the resulting eigenvalue equation are obtained using the adiabatic approach and the two-dimensional diagonalization method. We conclude that the evolution of the energy spectrum depends predominantly on the anisotropy-induced change of geometric confinement size. In addition, it has been determined that the peak position of the nonlinear optical rectification shifts to lower or higher energies as the asymmetry of the system increases, depending on whether the QD is in the oblate or prolate case. This feature can be considered an advantage in tuning the nonlinear optical properties of systems based on two-dimensional semiconductor heterostructures.

A photonic integrated chip platform for interlayer exciton valley routing

Interlayer excitons in two-dimensional semiconductor heterostructures show suppressed electron–hole overlap resulting in longer radiative lifetimes as compared to intralayer excitons. Such tightly bound interlayer excitons are relevant for important optoelectronic applications, including light storage and quantum communication. Their optical accessibility is, however, limited due to their out-of-plane transition dipole moment. In this work, we design a complementary metal–oxide–semiconductor-compatible photonic integrated chip platform for enhanced near-field coupling of these interlayer excitons with the whispering gallery modes of a microresonator, exploiting the high confinement of light in a small modal volume and high-quality factor of the system. Our platform allows for highly selective emission routing via engineering an asymmetric light transmission that facilitates efficient readout and channeling of the excitonic valley state from such systems.

Dual-Channel WS2/WSe2 Heterostructure with Tunable Graphene Electrodes

Two-dimensional semiconductor heterostructures provide significant research potential for electronic and optoelectronic applications because of their scaled thickness, pristine heterostructure interface, and ultrafast carrier transport. Herein, we report a dual-channel field-effect transistor based on n-type WS2 and p-type WSe2 layered heterostructure using multilayered graphene as electrodes to enable electron-dominated ambipolar electrical transport. WS2 exhibits mobility of 20 cm2 V–1 s–1 and an on/off ratio of 105, whereas WSe2 exhibits mobility of 5 cm2 V–1 s–1 and an on/off ratio of 104. Furthermore, our results show negative Schottky barrier heights between dual-channel heterostructure and multilayered graphene. The proposed design reduces complications in the fabrication of devices with integrated heterostructures, particularly for complementary metal-oxide semiconductor inverter applications.

Magnetic response of a two-dimensional viscous electron fluid

It has been established that the Coulomb interactions can transform the electron gas into a viscous fluid. This fluid is realized in a number of platforms, including graphene and two-dimensional semiconductor heterostructures. The defining characteristic of the electron fluid is the formation of layers of charge carriers that are in local thermodynamic equilibrium, as in classical fluids. In the presence of nonuniformities, whirlpools and nontrivial flow profiles are formed, which have been directly imaged in recent experiments. In this paper, we theoretically study the response of the electron fluid to localized magnetic fields. We find that the electric current is suppressed by viscous vortices in regions where magnetic field is sharply varying, causing strong transport signatures. Experimentally, our considerations are relevant since local magnetic fields can be applied to the system through implanting adatoms or embedding micromagnets in the top-gate. Our theory is essential for the characterization and future applications of electron fluids in hydrodynamic spin transport.

Micromagnets dramatically enhance effects of viscous hydrodynamic flow in a two-dimensional electron fluid

The hydrodynamic behavior of electron fluids in a certain range of temperatures and densities is well established in graphene and in two-dimensional semiconductor heterostructures. The hydrodynamic regime is intrinsically based on electron-electron interactions, and therefore it provides a unique opportunity to study electron correlations. Unfortunately, in simple longitudinal resistance measurements, the relative contribution of hydrodynamic effects to transport is rather small, especially at higher temperatures. Viscous hydrodynamic effects are masked by impurities, interaction with phonons, uncontrolled boundaries, and ballistic effects. This essentially limits the accuracy of measurements of electron viscosity. Fundamentally, what causes viscous friction in the electron fluid is the property of the flow called vorticity. In this paper, we propose to use micromagnets to increase the vorticity by orders of magnitude. Experimental realization of this proposal will bring electron hydrodynamics to a qualitatively new precision level, as well as opening a new way to characterize and externally control the electron fluid.

Highly energy-tunable quantum light from moiré-trapped excitons.

Photon antibunching, a hallmark of quantum light, has been observed in the correlations of light from isolated atomic and atomic-like solid-state systems. Two-dimensional semiconductor heterostructures offer a unique method to create a quantum light source: Moiré trapping potentials for excitons are predicted to create arrays of quantum emitters. While signatures of moiré-trapped excitons have been observed, their quantum nature has yet to be confirmed. Here, we report photon antibunching from single moiré-trapped interlayer excitons in a heterobilayer. Via magneto-optical spectroscopy, we demonstrate that the discrete anharmonic spectra arise from bound band-edge electron-hole pairs trapped in moiré potentials. Last, we exploit the large permanent dipole of interlayer excitons to achieve large direct current (DC) Stark tuning up to 40 meV. Our results confirm the quantum nature of moiré-confined excitons and open opportunities to investigate their inhomogeneity and interactions between the emitters or energetically tune single emitters into resonance with cavity modes.

Efficient hot-electron extraction in two-dimensional semiconductor heterostructures by ultrafast resonant transfer.

Energy loss from hot-carrier cooling sets the thermodynamic limit for the photon-to-power conversion efficiency in optoelectronic applications. Efficient hot-electron extraction before cooling could reduce the energy loss and leads to efficient next generation devices, which, unfortunately, is challenging to achieve in conventional semiconductors. In this work, we explore hot-electron transfer in two-dimensional (2D) layered semiconductor heterostructures, which have shown great potential for exploring new physics and optoelectronic applications. Using broadband micro-area ultrafast spectroscopy, we firmly established a type I band alignment in the WS2-MoTe2 heterostructure and ultrafast (∼60 fs) hot-electron transfer from photoexcited MoTe2 to WS2. The hot-electron transfer efficiency increases with excitation energy or excess energy as a result of a more favorable continuous competition between resonant electron transfer and cooling, reaching 90% for hot electrons with 0.3 eV excess energy. This study reveals exciting opportunities of designing extremely thin absorber and hot-carrier devices using 2D semiconductors and also sheds important light on the photoinduced interfacial process including charge transfer and generation in 2D heterostructures and optoelectronic devices.

Plasma wave oscillations in a nonequilibrium two-dimensional electron gas: Electric field induced plasmon instability in the terahertz frequency range

We have developed a theory of collective electron oscillations in two-dimensional semiconductor heterostructures subjected to a high electric field. The effect of the stationary electric field has been taken into account on both steady-state and high-frequency electron transport. The analysis has been conducted by solving Boltzmann-Vlasov equations in the collisionless approach for high-frequency electron transport. Two actual types of heterostructures with ungated and gated two-dimensional (2D) electron gas have been considered. We have found that the collective excitation spectra of 2D electron gas are of the multibranch character with high-quality plasmonic modes and a set of thermal modes. Applied electric field induces the following effects: strong nonreciprocal behavior of both oscillation frequency and damping; interaction of plasmonic and thermal modes; instability of excitations propagating along the electron drift (effect of negative Landau damping). The mechanism of this plasma wave instability is different from early discussed Cherenkov, Dyakonov-Shur, and Ryzhii-Satou-Shur mechanisms of instabilities in plasmonic systems. It has been shown that the electrically induced plasmon instability provides amplification of terahertz (THz) radiation in grating-based plasmonic structures. We suggest that presented results can be important for deeper understanding of THz plasma physics and developing of electrically pumping devices for THz optoelectronics.

Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures

Electrostatically defined nanoscale devices on two-dimensional semiconductor heterostructures are the building blocks of various quantum electrical circuits. Owing to its atomically flat interfaces and the inherent two-dimensional nature, van der Waals heterostructures hold the advantage of large-scale uniformity, flexibility and portability over the conventional bulk semiconductor heterostructures. In this letter we show the operation of a split-gate defined point contact device on a MoS2/h-BN heterostructure, the first step towards realizing electrostatically gated quantum circuits on van der Waals semiconductors. By controlling the voltage on the split-gate we are able to control and confine the electron flow in the device leading to the formation of the point contact. The formation of the point contact in our device is elucidated by the three characteristic regimes observed in the pinch-off curve; transport similar to the conventional FET, electrostatically confined transport and the tunneling dominated transport. We explore the role of the carrier concentration and the drain-source voltages on the pinch-off characteristics. We are able to tune the pinch-off characteristics by varying the back-gate voltage at temperatures ranging from 4 K to 300 K.

Correlated fluorescence blinking in two-dimensional semiconductor heterostructures.

'Blinking', or 'fluorescence intermittency', refers to a random switching between 'ON' (bright) and 'OFF' (dark) states of an emitter; it has been studied widely in zero-dimensional quantum dots and molecules, and scarcely in one-dimensional systems. A generally accepted mechanism for blinking in quantum dots involves random switching between neutral and charged states (or is accompanied by fluctuations in charge-carrier traps), which substantially alters the dynamics of radiative and non-radiative decay. Here, we uncover a new type of blinking effect in vertically stacked, two-dimensional semiconductor heterostructures, which consist of two distinct monolayers of transition metal dichalcogenides (TMDs) that are weakly coupled by van der Waals forces. Unlike zero-dimensional or one-dimensional systems, two-dimensional TMD heterostructures show a correlated blinking effect, comprising randomly switching bright, neutral and dark states. Fluorescence cross-correlation spectroscopy analyses show that a bright state occurring in one monolayer will simultaneously lead to a dark state in the other monolayer, owing to an intermittent interlayer carrier-transfer process. Our findings suggest that bilayer van der Waals heterostructures provide unique platforms for the study of charge-transfer dynamics and non-equilibrium-state physics, and could see application as correlated light emitters in quantum technology.

Directional interlayer spin-valley transfer in two-dimensional heterostructures.

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2–WSe2 heterostructure. Using non-degenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in two-dimensional spin/valleytronic devices for storing and processing information.

Time-dependent scattering of a composite particle: A local self-energy approach for internal excitations

When composite particles---such as small molecules, nuclei, or photogenerated excitons in semiconductors---are scattered by an external potential, energy may be transferred between the c.m. and the internal degrees of freedom. An accurate dynamical modeling of this effect is pivotal in predicting diverse scattering quantities and reaction cross sections, and allows us to rationalize time-resolved energy and localization spectra. Here, we show that time-dependent scattering of a quantum composite particle with an arbitrary, nonperturbative external potential can be obtained by propagating the c.m. degrees of freedom with a properly designed local self-energy potential. The latter embeds the effect of internal virtual transitions and can be obtained by the knowledge of the stationary internal states. The case is made by simulating Wannier-Mott excitons in one- and two-dimensional semiconductor heterostructures. The self-energy approach shows very good agreement with numerically exact Schr\odinger propagation for scattering potentials where a mean-field model cannot be applied, at a dramatically reduced computational cost.

Lie algebraic approach to the time-dependent quantum general harmonic oscillator and the bi-dimensional charged particle in time-dependent electromagnetic fields

We discuss the one-dimensional, time-dependent general quadratic Hamiltonian and the bi-dimensional charged particle in time-dependent electromagnetic fields through the Lie algebraic approach. Such method consists in finding a set of generators that form a closed Lie algebra in terms of which it is possible to express a quantum Hamiltonian and therefore the evolution operator. The evolution operator is then the starting point to obtain the propagator as well as the explicit form of the Heisenberg picture position and momentum operators. First, the set of generators forming a closed Lie algebra is identified for the general quadratic Hamiltonian. This algebra is later extended to study the Hamiltonian of a charged particle in electromagnetic fields exploiting the similarities between the terms of these two Hamiltonians. These results are applied to the solution of five different examples: the linear potential which is used to introduce the Lie algebraic method, a radio frequency ion trap, a Kanai–Caldirola-like forced harmonic oscillator, a charged particle in a time dependent magnetic field, and a charged particle in constant magnetic field and oscillating electric field. In particular we present exact analytical expressions that are fitting for the study of a rotating quadrupole field ion trap and magneto-transport in two-dimensional semiconductor heterostructures illuminated by microwave radiation. In these examples we show that this powerful method is suitable to treat quadratic Hamiltonians with time dependent coefficients quite efficiently yielding closed analytical expressions for the propagator and the Heisenberg picture position and momentum operators.

Terahertz spectroscopy of quantum 2D electron systems

Terahertz time-domain spectroscopy permits the coherent motion of charges to be examined in a diverse range of two-dimensional semiconductor heterostructures. Studies of the THz conductivity and magnetoconductivity of two-dimensional quantum systems are reviewed, including cyclotron resonance spectroscopy and the transverse conductivity in the Hall and quantum Hall regimes. Experiments are described that demonstrate quantum phenomena at THz frequencies, principally coherent control and enhanced light–matter coupling in electromagnetic cavities.

Electronic bands and gaps in two-dimensional semiconductor heterostructures: Square lattice systems of cylindrical quantum wells and barriers

We use the single band effective-mass approximation to calculate the energy spectrum of two-dimensional (2D) semiconductor heterostructures consisting of a square lattice-based system of cylindrical rods embedded in matrix. The electronic spectrum is studied versus the filling fraction; we also examine the role of material parameters, including the effective mass and the energy gap width in each component material, in the discretization of conduction bands. Referring to the case of 2D heterostructures, the results of our calculations allow to determine parameter values corresponding to electronic band structure with bands and gaps of desired width. An intuitive explanation of the obtained relations suggests similar ones in regular three-dimensional lattices of quantum dots, systems applied in photovoltaic and thermoelectric cells.

Delay time of electron wave packet through a two-dimensional semiconductor heterostructure

In this work, we systematically investigate the group delay time of an electron wave packet through a two-dimensional semiconductor heterostructure. It is shown that the lateral displacement, resulting from the angular spread of the electron wave packet, plays an important role in total delay time. In the propagating case, the group delay time can be negative due to the effect of lateral displacement, and is greatly enhanced by transmission resonances. In the evanescent case, the delay time saturates to a constant in the opaque limit, which is simply the Hartman effect observed for a two-dimensional situation.

Diffuse emission in the presence of an inhomogeneous spin-orbit interaction for the purpose of spin filtration

A lateral interface connecting two regions with different strengths of the Bychkov-Rashba spin-orbit interaction can be used as a spin polarizer of electrons in two-dimensional semiconductor heterostructures [Khodas et al., Phys. Rev. Lett. 92, 086602 (2004)]. In this paper we consider the case when one of the two regions is ballistic, while the other one is diffusive. We generalize the technique developed for the solution of the problem of the diffuse emission to the case of the spin-dependent scattering at the interface and determine the distribution of electrons emitted from the diffusive region. It is shown that the diffuse emission is an effective way to get electrons propagating at small angles to the interface that are most appropriate for the spin filtration and a subsequent spin manipulation. Finally, a scheme is proposed of a spin filter device (see Fig. 9) that creates two almost fully spin-polarized beams of electrons.

Spin polarization of electrons by nonmagnetic heterostructures: the basics of spin optics.

We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin polarize the electrons in gated two-dimensional semiconductor heterostructures. For a beam with a nonzero angle of incidence, the transmitted electrons will split into two spin polarization components propagating at different angles. We analyze the refraction at such an interface and outline the basic schemes for filtration and control of the electron spin.