Abstract
A lateral interface connecting two regions with different strengths of the Bychkov-Rashba spin-orbit interaction can be used as a spin polarizer of electrons in two-dimensional semiconductor heterostructures [Khodas et al., Phys. Rev. Lett. 92, 086602 (2004)]. In this paper we consider the case when one of the two regions is ballistic, while the other one is diffusive. We generalize the technique developed for the solution of the problem of the diffuse emission to the case of the spin-dependent scattering at the interface and determine the distribution of electrons emitted from the diffusive region. It is shown that the diffuse emission is an effective way to get electrons propagating at small angles to the interface that are most appropriate for the spin filtration and a subsequent spin manipulation. Finally, a scheme is proposed of a spin filter device (see Fig. 9) that creates two almost fully spin-polarized beams of electrons.
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