Tunneling Mechanism Research Articles

Electrical circuit approaches to modeling brain chaos: insights into neural dynamics

This paper investigates the simulation of brain chaos dynamics using a combination of the Chua circuit and diode tunnel mechanisms, aiming to examine chaotic behavior in brain networks. Leveraging the inherent chaotic properties of the Chua circuit, Fitzhugh-Nagumo (FHN) function and the nonlinear characteristics of diode tunneling, our model offers a platform to mimic the intricate synaptic interactions observed in the brain. By subjecting the model to various stimuli and perturbations, we analyze the emergence and evolution of chaotic patterns, shedding light on the underlying mechanisms of cerebral chaos. Through numerical simulations and experimental validation, we demonstrate the effectiveness of our approach in replicating key features of brain chaos and highlight its potential implications for understanding neurological disorders and cognitive processes. This research contributes to the broader effort of leveraging computational models to explore the complex dynamics of the brain and their implications for neuroscience and microengineering.

The effect of single walled carbon nanotubes on conductivity and thermal properties of glass fiber reinforced composites

Abstract This paper reports on a comprehensive study of the effect of single-walled carbon nanotube (SWCNT) on the alternating current (AC) conductivity, thermal and morphological properties of the unsaturated polyester based glass fiber reinforced polymer composite (GFRPC). AC conductivity measurements were carried out using the impedance spectrum and thermal measurements were carried out using differential scanning calorimetry (DSC) at a temperature range of 24-900 °C and heating rates of 20 °C/min. Impedance results showed that the conductivity behavior in the nanotube-loaded composite laminate obeys a Jonscher-type mechanism. At low frequencies, the conductivity value remains almost constant for the doped material and takes the value of 10-5 S/cm. It is observed that the AC conductivity starts to increase after the critical frequency value of approximately 103 Hz and increases up to 10-2 S/cm due to hopping and tunneling mechanisms caused by space charge polarization accumulated in the local regions at high frequencies. The pure material with an insulating nature also exhibited a typical insulating behavior. Thermal testing showed that nanotube reinforcement increases thermal conductivity in three different directions. DSC thermocurves analysis also revealed that the addition of carbon nanotubes increased the glass transition temperature of the material from 180°C to 190°C. The scaling and fractal analysis methods were also applied to obtain hetero morphological structure of materials. The fractal analysis results indicated that carbon nanotube doping to the standard sample increases the coating rates, scalability and heterogeneity of the solid phase surface of the sample. The coating rates of composite surfaces were calculated as 45% and 36%, respectively. Morphology analysis revealed that the probability of finding surface particles for the nanotube-doped sample decreased compared to the undoped sample, but the fractal dimension value increased. While this value was 1.83 in the pure sample, it increased to 1.92 in the nanotube material.

Failure analysis and deformation characteristics of shield tunnel obliquely crossing ground fissure under earthquake

In order to study the deformation law and failure characteristics of shield tunnel obliquely crossing ground fissure under earthquake action, taking the shield tunnel of Xi ’an Metro Line 8 crossing f3 ground fissure as the engineering background, the 1: 20 shaking table model test method was used to analyze the strain of shield tunnel, the contact pressure with surrounding rock soil, the dislocation of segment and the axial force of bolt in detail, and the seismic damage mechanism and failure characteristics of shield tunnel obliquely crossing ground fissure were obtained. The test results show that under the action of earthquake, the shield tunnel has complex three-dimensional deformation characteristics, among which the vertical deformation is the most obvious. The deformation is mainly concentrated in the location of the ground fissure. The tensile strain and contact pressure of the hanging wall of the tunnel segment are greater than the strain value and contact pressure of the footwall. Because the vertical deformation of the tunnel is the largest, the bolts at the vault and the arch bottom are most obviously pulled. Excavation after the test, it can be seen that the tunnel appeared the phenomenon of ring joint opening, lining cracking and other damage. Under the action of the earthquake, the shield tunnel across the ground fissure is mainly subjected to tensile failure. The failure area is within 10 m from the ground fissure in the hanging wall and footwall, and the total length is 20 m. The closer to the ground fissure, the more serious the damage. The research results provide a scientific and reasonable reference for the subsequent construction and disaster prevention and mitigation design of Xi ’an Metro.

Exploring the Potential of Tunnel Field-Effect Transistors in Biomedical Devices: A Comprehensive Survey

Implantable medical devices have revolutionized healthcare by providing continuous monitoring and therapeutic interventions within the human body. The overall performance of these devices is heavily dependent on the effectiveness and efficiency of integrated electronic components, such as transistors. This survey explores the growing utilization of Tunnel Field-Effect Transistors (TFETs) in implantable devices, shedding light on their advantages and challenges in this specific application domain. TFETs, characterized by their unique tunnelling mechanism, offer several advantages that make them well suited for implantable devices. Their low-power consumption, reduced leakage current, and improved subthreshold swing make them ideal for energy-efficient, long-lasting operation within the constrained power budgets of implantable devices. Furthermore, TFETs exhibit excellent performance at low supply voltages, ensuring minimal tissue damage and heat generation. This survey also addresses the challenges associated with TFETs in implantable devices, including fabrication complexities, variability, and compatibility with existing technologies. It highlights recent advancements in TFET technology that address these concerns, such as improved material choices and manufacturing techniques. As technology continues to advance, TFETs are poised to play a pivotal role in improving the overall efficiency and reliability of life-saving technologies and medical devices. Overall, this survey provides valuable insights into the current state and future prospects of TFETs in implantable devices, guiding researchers and engineers in harnessing their potential for the benefit of healthcare and patient well-being.

Using Bifluxon Tunneling to Protect the Fluxonium Qubit

Encoding quantum information in quantum states with disjoint wave-function support and noise-insensitive energies is the key behind the idea of qubit protection. While fully protected qubits are expected to offer exponential protection against both energy relaxation and pure dephasing, simpler circuits may grant partial protection with currently achievable parameters. Here, we study a fluxonium circuit in which the wave functions are engineered to minimize their overlap while benefiting from a first-order-insensitive flux sweet spot. Taking advantage of a large superinductance (L∼1 μH), our circuit incorporates a resonant tunneling mechanism at zero external flux that couples states with the same fluxon parity, thus enabling bifluxon tunneling. The states |0⟩ and |1⟩ are encoded in wave functions with parities 0 and 1, respectively, ensuring a minimal form of protection against relaxation. Two-tone spectroscopy reveals the energy-level structure of the circuit and the presence of 4π quantum-phase slips between different potential wells corresponding to m=±1 fluxons, which can be precisely described by a simple fluxonium Hamiltonian or by an effective bifluxon Hamiltonian. Despite suboptimal fabrication, the measured relaxation (T1=177±3 μs) and dephasing (T2E=75±5 μs) times not only demonstrate the relevance of our approach but also open an alternative direction toward quantum computing using partially protected fluxonium qubits. Published by the American Physical Society 2024

Observation of parity-time symmetry for evanescent waves

Parity-time (PT) symmetry has enabled the demonstration of fascinating wave phenomena in non-Hermitian systems characterized by precisely balanced gain and loss. Until now, the exploration and observation of PT symmetry in scattering settings have largely been limited to propagating waves. Here, we demonstrate a versatile coupled-resonator acoustic waveguide (CRAW) system that enables the observation of PT-symmetric scattering responses for evanescent waves within a bandgap. By examining the generalized scattering matrix in the evanescent wave regime, we observe hallmark PT-symmetric phenomena—including phase transitions at an exceptional point, anisotropic transmission resonances, and laser-absorber modes—in systems that do not require balanced distributions of gain and loss. Owing to the peculiar energy transfer features of evanescent waves, our results not only demonstrate a distinct pathway for observing PT symmetry, but also enable strategies for exotic energy tunneling mechanisms, paving fresh directions for wave engineering grounded in non-Hermitian physics.

The effect of practicing transfer pricing and financial performance: Evidence from multinational corporations in the UAE

This research aimed to determine if the financial performance of multinational firms in the United Arab Emirates (UAE) and the appraisal of transfer pricing are significantly correlated. The firms’ financial statements from 2012 to 2022 were used as the primary source data. The research used the panel least squares regression approach to analyze the data acquired from multinational firms in the UAE to assess the research hypotheses. A correlational research methodology was employed to investigate the hypothesized association between transfer price assessment factors and financial performance. The results showed an insignificant effect for bonus mechanisms, tax expenses, and return on assets as measurements of financial performance, but tunneling incentives have an insignificant relationship with return on assets. As a result, the research suggests that multinational corporations in the UAE enhance tax expenses, tunneling, and bonus mechanisms to achieve a higher rate of return on assets. Additionally, UAE multinational firms should reassess their bonus mechanism for optimal financial performance. The study's limitations and findings offer several investigation opportunities related to transfer pricing practices in the UAE, and future researchers could make a comparative study on transfer pricing in different countries.

Resonant transport in a double-barrier heterostructure AlxGa1−xAs/GaAs and mass discontinuity: a semiclassical path integral approach

In this paper, we investigate the dependence of the resonant carrier transport in an AlGaAs/GaAs double-barrier heterostructure on the electron’s effective mass discontinuity between the well and the barrier layer. We use a one-dimensional model for the effective potential and consider the activation of the resonant tunneling mechanism when a bias is applied between the emitter and the collector. We calculate the system’s Green’s function through semiclassical path integration to obtain the complex spectrum. Electron’s effective mass discontinuity affects our calculations through the contributions of the various propagations inside the heterostructure and the multiple reflections from the turning points. Our findings show that the lowest resonance energy decreases linearly with increasing bias, while the real energy shift of the resonance decreases in a non-linear manner with the mass discontinuity. We also observe that the resonant transport time increases nearly linearly with the mass discontinuity. These results demonstrate the impact of the carrier’s inertia enhancement on the resonance characteristics and are consistent with established concepts in quantum mechanics and previously published works. Furthermore, we identify a critical bias value that distinguishes the behavior of the symmetric and asymmetric heterostructure. Additionally, the derivative of the transport time with respect to mass discontinuity is found to be independent of the applied bias. Our results provide concise analytical relationships involving parameters such as barrier and well thickness and shape, enabling the prediction and optimization of various nanoscale devices’ performance.

Intrinsic Josephson junction characteristics of Nd2-xCexCuO4 /SrTiO3 epitaxial films

The current-voltage (I-V) properties along the c axis on Nd2-xCexCuO4/SrTiO3 epitaxial films with x = 0.145, 0.15 were investigated. For all the samples it has been established that the I-V characteristics exhibit several resistive branches, which correspond to the resistive states of individual Josephson junctions. The results confirm the idea of a tunneling mechanism between the CuO2 layers (superconductor - insulator - superconductor junction) for the investigated Nd2-xCexCuO4 compound. The I-V dependence of this compound with x = 0.15 points out on the nonmonotonic nature of the d-wave or anisotropic s-wave symmetry order parameter associated with the coexistence of superconductivity and antiferromagnetic fluctuations.

Investigation on in-situ thermal behavior of tunnel surrounding rock based on the thermal probe test

Heat-transfer mechanism of energy tunnel is different from that of conventional borehole heat exchanger, where the thermal flux flows along perpendicular to the tunnel circumferential direction. However, the existing measurement methods cannot directly detect the in-situ thermal behavior and thermal conductivity of surrounding rock of tunnel circumferential direction. Hence, a thermal probe test (TPT) equipment was developed and the TPT was performed to investigate the in-situ thermal behavior of surrounding rock, the thermal conductivity measurement methods of tunnel surrounding rock was proposed and compared with laboratory measurement methods. The results showed that the developed TPT equipment achieved to directly detect the in-situ thermal behavior and thermal conductivity of circumferential surrounding rock. There was a significant variation in thermal response curves of different test areas due to the fact that joint development affected the transfer paths of the thermal flux, the temperature difference between test point 1 and test point 2 could reach up to 11.4 °C. The thermal conductivity tested by TPT was reliable and reflected the in-situ thermal behavior, the deviation was 6.99 % and 1.08 %, respectively, compared with laboratory measurement results. The joint development of the surrounding rock had a major impact on the thermal conductivity, where the thermal conductivity ranged from 0.66 to 2.91 W/m K in the 1# borehole and 1.96 to 3.66 W/m K in the 2# borehole. The local thermal conductivities were difficult to apply to an energy tunnel design, hence, the comprehensive thermal conductivity model of surrounding rock with joints was proposed based on series–parallel theory and was simplified according to the heat-transfer mechanism of energy tunnel. The comprehensive thermal conductivity model provided a new idea for obtaining the heterogeneity of thermal-physical properties of tunnel surrounding rock, which improved performance predictions and optimized design strategies for energy tunnel projects, enhancing their efficiency and reliability in various applications.

Investigation of ferro-resistive switching mechanisms in TiN/Hf0.5Zr0.5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect

This study presents an in-depth analysis of ferro-resistive switching (FRS) behaviors in a TiN/Hf0.5Zr0.5O2(HZO)/WOx/W ferroelectric tunnel junction (FTJ) device, with a particular focus on the role of the tungsten oxide (WOx) interface layer (IL). Structural examinations confirm the presence of the WOx IL, which significantly influences the FRS properties of the device. Electrical measurements indicate the devices exhibit stable and reproducible FRS characteristics with an ON/OFF ratio of 9.7, predominantly attributed to the tunneling electro-resistance (TER) effect driven by the ferroelectric polarization. Comprehensive numerical simulations, incorporating the nucleation-limited switching model and Simmons tunneling mechanism, provide detailed insights into how the WOx IL and the trapped charges at the HZO/WOx interface affect polarization switching mechanisms and the electronic potential barrier profile. These findings underscore the importance of interface effects in HfO2-based FTJs and advance the understanding of the TER mechanism in multilayer ferroelectric systems.

Van der Waals integrated single-junction light-emitting diodes exceeding 10% quantum efficiency at room temperature.

The construction of miniaturized light-emitting diodes (LEDs) with high external quantum efficiency (EQE) at room temperature remains a challenge for on-chip optoelectronics. Here, we demonstrate microsized LEDs fabricated by a dry-transfer van der Waals (vdW) integration method using typical layered Ruddlesden-Popper perovskites (RPPs). A single-crystalline layered RPP nanoflake is used as the active layer and sandwiched between two few-layer graphene contacts, forming van der Waals LEDs (vdWLEDs). Strong electroluminescence (EL) emission with a low turn-on current density of ~20 pA μm-2 and high EQE exceeding 10% is observed at room temperature, which sets the benchmark for the EQE of vdWLEDs ever recorded. Such efficient EL emission is attributed to the inherent multiple quantum well structure and high photoluminescence quantum yield (~35%) of RPPs and a low charge injection barrier of ~0.10 eV facilitated by the Fowler-Nordheim tunneling mechanism. These findings promise a scalable pathway for accessing high-performance miniaturized light sources for on-chip optical optoelectronics.

Low-power ternary inverter using vertical tunnel field-effect transistor with pocket

ABSTRACT This paper proposes a vertical tunnel FET with pocket (VP-TFET)-based standard ternary inverter (T-inverter) model for low-power applications. Using TCAD Sentaurus tool and mixed-mode simulations, it is verified that the device can exhibit T-inverter voltage transfer characteristics (VTCs) with three steady output voltage levels when the doping length and concentration of the pocket are optimized The device’s T-inverter characteristics are achieved by employing channel-channel and source-channel tunnelling mechanisms. Current matching is crucial for n-/p–type devices to produce a steady third output voltage state. The proposed ternary inverter’s static noise margin (SNM) and static and dynamic power dissipations are computed to be 220 mV, 4.8 × 10−12 W, and 4 × 10−12 W, respectively, which assures better noise immunity and low power consumption compared to other models.

High-Sensitivity and Fast-Response Photomultiplication Type Photodetectors Based on Quasi-2D Perovskite Films for Weak-Light Detection.

Photovoltaic photodiodes often face challenges in effectively harvesting electrical signals, especially when detecting faint light. In contrast, photomultiplication type photodetectors (PM-PDs) are renowned for their exceptional sensitivity to weak signals. Here, an advanced PM-PD is introduced based on quasi 2D Ruddlesden-Popper (Q-2D RP) perovskites, optimized for weak light detection at minimal operating voltages. The abundant traps at the Q-2D RP surface capture charge carriers, inducing a trap-assisted tunneling mechanism that leads to the photomultiplication (PM) effect. Deep-lying trap states within the Q-2D RP bulk accelerate charge carrier recombination, resulting in an outstanding rise/fall time of 1.14/1.72 µs for the PM-PDs. The PM-PD achieves a remarkable response level of up to 45.89 AW-1 and an extraordinary external quantum efficiency of 14400% at -1V under an illumination of 1 µWcm- 2. The intrinsic high resistance of the Q-2D perovskite results in a low dark current, enabling an impressive detectivity of 4.23 × 1012 Jones based on noise current at -1V. Furthermore, the practical application of PM-PDs has been demonstrated in weak-light, high-rate communication systems. These findings confirm the significant potential of PM-PDs based on Q-2D perovskites for weak light detection and suggest new directions for developing low-power, high-performance PM-PDs for future applications.

Practical twin-field quantum key distribution parameter optimization based on quantum annealing algorithm

Abstract Twin-field quantum key distribution (TF-QKD) is widely studied since it can surpass the key capacity of repeaterless QKD, whereas electromagnetic interference (EMI) is one of the main challenges in its practical applications. This study is based on the Faraday–Michelson TF-QKD. Analyze the effect of EMI on the rotation angle of the Faraday mirror causing an additional quantum bit error rate (QBER). Moreover, the quantum annealing algorithm (QA) based on quantum tunneling mechanism is applied to the optimization of practical TF-QKD. Mapping the secure key rate of TF-QKD into the evaluation function of QA and the transverse magnetic field is introduced to construct the kinetic energy term, which can realize the quantum tunneling effect. Meanwhile, the QA is improved in terms of chaotic optimization to obtain the dynamic initial value of the algorithm, the design of a perturbation method to skip the locally optimal solution, and the use of suitable temperature and magnetic field decay functions. Optimizing TF-QKD with QA, the standard deviation of QBER fluctuation caused by EMI is reduced to 0.206, the mean square error of the signal-state pulse intensity is only 3.38 × 10 − 4 , and the optimization accuracy of the secure key rate can reach 99.8 % . Additionally, this optimization method shortens the runtime and reduces computational resource consumption, making it highly efficient for practical implementations.

Effect of strain gradient and interface engineering on the high-temperature energy storage capacitors

The miniaturization and high integration of electronic devices pose new requirements for the energy storage density and high-temperature performance of dielectric capacitors. For thin film materials, internal stress and the interface layer often show a significant impact on their energy storage performance. Therefore, the capacitors with different stress gradient sequences and different periods were designed by BaHf0.17Ti0.83O3 (BHTO17), BaHf0.25Ti0.75O3 (BHTO25), and BaHf0.32Ti0.68O3 (BHTO32) to investigate the effect of stress gradient and interface engineering on the energy storage characteristics. Dielectric thin film structures with upward gradient, downward gradient, and periodic upward gradient (4N) were constructed. The study found that the upward gradient structure had higher breakdown field strength than the downward gradient structure. This is because the upward gradient structure can effectively extend the ending electric field of the Ohmic conduction mechanism and delay the activation electric field of the F–N tunneling mechanism. The 4N structure had a slightly higher breakdown field strength (reaching 9.22 MV/cm) compared to the pure upward gradient structure. The 4N structure thin film also exhibited higher energy storage density (115.44 J/cm3) and wide temperature (−100 to 400 °C) characteristics. These findings provide important guidance and application value for improving the energy storage characteristics of dielectric capacitors at high temperatures through structural design.

Pulsed X‐Ray Detector Based on Vertical p‐NiO/β‐Ga2O3 Heterojunction Diode

Gallium Oxide (Ga2O3) devices have shown great potential for radiation detection. However, developing Ga2O3 detectors for pulsed radiation monitoring is still challenging, which requires high response sensitivity (R), low noise, high time resolution, and linear outputs. Herein, a vertical p‐NiO/β‐Ga2O3 heterojunction diode (HJD) is fabricated and its performance in X‐ray detection is analyzed. Benefiting from the high quality of the p‐n heterojunction, the HJD exhibits a low‐leakage current density of less than 1.73 × 10−7 A cm−2 at 100 V and features a high R of 7.92 μC Gy−1 cm−2, a low noise equivalent dose rate of 9.14 × 10−12 Gy−1 Hz−0.5 at an X‐ray dose rate of 0.383 Gy s−1, and good linear outputs to X‐ray dose rates from 0.0383 to 1.149 Gy s−1. The conductive process of the HJD detector is dominated by the tunneling mechanism, which leads to a longer response time associated with the trapping and releasing process of the deep‐level traps under the continuous X‐ray illumination. However, the pulsed X‐ray response property shows no significant influence from the slow trapping/releasing process of the traps. As a result, pulsed X‐ray radiation detection with a 50 ns full width is achieved, and the time resolution of the detector is characterized to be 3.31 ns by a 20 ps laser source.

Characterization Study of Deep-Level Defect Spatial Distribution, Emission Mechanisms, and Structural Identification

Abstract The characterization of defects in semiconductor materials and devices is crucial for enhancing the performance and reliability of semiconductor products. This tutorial review focuses on Deep Level Transient Spectroscopy (DLTS) as the primary analytical tool, thoroughly discussing its distinct advantages in deep-level defect characterization. However, it is unable to reveal the concentration-depth distribution of deep-level defects, neglects the dependency of carrier emission rates on the electric field, and fails to accurately identify defect structures.
To overcome these limitations, two enhanced DLTS techniques have been developed to extend the capabilities of DLTS. These enhancements include the utilization of graded fill pulse technology to accurately map defect distributions at various depths within devices, facilitating individual defect characterization across different layers of multilayered structures; the application of varying electric field strengths to samples to delve into the intricate physical mechanisms of defects during carrier emission processes; and the adjustment of the duration of electric pulse injection to monitor signal growth trends, deducing the microstructure of defects. The paper integrates research findings from a wide array of field experts, meticulously outlines a description of how to obtain the depth distribution of defect concentration in devices, furnishes quantitative criteria for both the Poole-Frenkel effect and phonon-assisted tunneling mechanisms of carrier emission, and provides specific examples for distinguishing between interface states/bulk defects and point defects/extended defects. This enhances both the theoretical and practical knowledge in this field. The advanced DLTS techniques outlined provide crucial guidance for defect characterization and performance optimization in semiconductor devices with new structures and materials.

Combinatorial Optimization of Metal‐Insulator‐Insulator‐Metal (MIIM) Diodes With Thickness‐Gradient Films via Spatial Atomic Layer Deposition

AbstractMetal‐insulator‐insulator‐metal (MIIM) diodes with thickness‐gradient films for the insulator layers are fabricated for the first time. Spatially varying atmospheric‐pressure chemical vapor deposition is used to deposit ZnO and Al2O3 films with orthogonal gradient directions, producing 414 MIIM diodes with 414 different ZnO/Al2O3 film‐thickness combinations on a single substrate for combinatorial and high‐throughput optimization. The nm‐scale ZnO/Al2O3 films are printed in only 2 min and the entire device fabrication takes 7 h, which is much less than conventional approaches for investigating many insulator‐thickness combinations. Rapid identification of the optimal thickness combination is demonstrated; high‐performance diodes (asymmetry = 227, nonlinearity = 13.1, and responsivity = 12 A/W) are observed when a trap‐assisted tunneling mechanism is dominant for insulator thicknesses of 3.4–4.4 nm (ZnO) and 7.4 nm (Al2O3).

From nano to macro in graphene-polymer nanocomposites: A new methodology for conductivity prediction

A two-step approach is proposed to forecast the conductivity of graphene polymer composites using simple models reflecting the tunneling mechanism and interphase part. Firstly, graphene and the adjacent interphase are presumed as figurative particles, and their conductivity is estimated. In the second stage, the conductivity of the nanocomposite containing figurative particles is predicted, considering the tunneling size between adjacent particles. The advanced methodology is used to forecast the conductivity for real examples. Additionally, the implications of all terms on the nanocomposite conductivity are assessed and explained. The estimations of conductivity acceptably agree with the measured data, which justifies the predictability of the suggested methodology. Thick interphase and short tunnels produce desirable conductivity, because they positively influence the net dimensions and tunneling resistance. Among the studied parameters, the thicknesses of graphene nanosheets and interphase have the highest impacts on the nanocomposite conductivity. The highest conductivity of nanocomposite as 7 S/m is obtained by the thickest interphase (ti = 10 nm) and the thinnest nanosheets (t = 1 nm), while t > 2 nm or ti < 5.5 nm cannot improve the conductivity. Furthermore, graphene volume fraction of 0.03 with the graphene diameter of 4 μm maximizes the nanocomposite conductivity to 3 S/m, but less filler amount and shorter nanosheets weaken the conductivity of nanocomposites.