Tunneling Conductance Research Articles

Investigating Molecular Junctions Based on Mixed Self-Assembled Monolayers to Understand the Impact of Intermolecular Interactions on Transport.

To interrogate the importance of intermolecular interactions on charge transport at the nanoscale, we investigate molecular tunnel junctions based on mixed self-assembled monolayers (SAMs) of 1-alkyl (CnT) thiols and their fluorinated counterparts (F-CnT) that have substantially different tunneling conductances. Experiments on mixed CnT1-x:F-CnTx SAMs between Au contacts reveal a strongly nonlinear (exponential) dependence of the tunneling conductance G on composition x, a behavior that is tempting to assign to the strong impact of intra-SAM intermolecular interactions. However, analysis suggests that the exponential dependence of G on x does not arise from intra-SAM intermolecular interactions, but instead emerges from the work function modification of the Au electrode which varies linearly with x.

Magneto tunnel conductance across twisted Weyl semimetal junctions

Magneto tunnel conductance across twisted Weyl semimetal junctions

Unveiling the Resistive Switching Mechanism and Low Current Dynamics of Ru‐based Hybrid Synaptic Memristors

AbstractMobile Ru ions in oxide media have been reported as a novel species that offer extremely low switching currents for memristors. However, their bi‐stable resistive‐switching (RS) and low‐switching currents dynamics have not been quantitatively unveiled. Here, the bi‐stable RS mechanism via in‐depth field‐induced atomic migration and chemical bonding state studies is elucidated, showing that the RS of the Ru‐based hybrid memristor (RHM) is possible via the simultaneously controlled hybrid Ru cation and oxygen anion. Additionally, the Ru ion mobility is quantitatively obtained via atomic moving distance and switching time measurements, demonstrating that the lower Ru ion mobility, compared to other conventional mobile species in oxide media, can be the origin of the low‐switching currents. It is found that the current conduction mechanism of the low‐resistance‐state in RHMs has temperature‐range‐dependencies. The direct tunneling conduction mechanism is dominant in relatively low temperatures; however, the ionic transport and thermally activated hopping conduction mechanism govern the current flow in high temperatures. Owing to the low Ru ion mobility, the RHM exhibits highly linear synaptic plasticity with a low‐conductance regime, showing outstanding energy efficiency compared to other memristors in image recognition tasks. These findings can contribute to improving the feasibility of hyper‐scale synaptic cores consisting of RHMs.

Superconducting density of states and vortex lattice of LaRu2P2 observed by scanning tunneling spectroscopy

We provide the superconducting density of states of the pnictide superconductor LaRu2P2(Tc= 4.1 K), measured using millikelvin scanning tunneling microscopy. From the tunneling conductance, we extract a density of states which shows the opening of a s-wave single superconducting gap. The temperature dependence of the gap also follows BCS theory. Under magnetic fields, vortices present Caroli de Gennes Matricon states, although these are strongly broadened by defect scattering. From the vortex core size we obtain a superconducting coherence length ofξ = 50 nm, compatible with the value extracted from macroscopicHc2measurements. We discuss the comparison between s-wave LaRu2P2and pnictide unconventional multiple gap and strongly correlated Fe based superconductors.

Broadband Dielectric Spectroscopy: Unraveling Na+diffusion and mixed conduction in Na₂O-modified zinc phosphate glasses for electrode material applications

The fundamental understanding of electric charge (ion + polarons/electrons) transport and relaxation mechanism is essential for applications in solid state ionics. In present work, to study Na+ transport, the electrical conductivity of zinc phosphate glasses modified with Na2O has been investigated in temperature range 313K and 473K and frequency range of 100 mHz to 1 MHz. The experimental data of Nyquist plots is fitted with appropriate equivalent circuits at different temperatures which reveals presence of mixed conduction (polaronic + ionic) and Na+ diffusion (at 50 mol% Na2O) in studied glass samples. The values of frequency exponent (s) obtained from the fitting of experimental data of the real part of electrical conductivity with Almond–West equation (WAE) have been used to determine the conduction mechanism. The electric transport in studied glasses occurred via correlated barrier hopping and non-overlapping small polaron tunnelling conduction models depending on the glass composition and temperature range of investigation. Electric Modulus studies further supports the assertion of composition and temperature dependent conduction mechanisms. The activation energies determined from conductivity, electric modulus, and impedance measurements are found to be consistent, indicating a good correlation in the study.

A novel approach to predict the electrical conductivity of nanocomposites by a weak interphase around graphene network

Herein, we offer a model for estimating the tunneling conductivity of polymer-graphene nanocomposites based on interfacial properties, the proportion of networked graphene, and the wettability value between the polymer medium and the filler. The interfacial properties are influenced by the minimum diameter of the nanosheets (Dc), whose conductivity can be transferred to the medium via interfacial conduction (τ). These parameters impact the actual aspect ratio and the volume proportion of the filler, which, in turn, control the onset of percolation and the proportion of nanosheets in the network. We apply all these parameters to develop a novel model for estimating the conductivity of graphene systems. The predictions obtained from this model across different parameter ranges are discussed. Additionally, experimental measurements are employed to evaluate the proposed equations. High filler conductivity enhances the nanocomposite’s conductivity by a strong interfacial conduction. However, the conductivity cannot be transferred to the polymer medium under condition of weak interfacial conduction. Furthermore, a robust interphase and a small Dc contribute to increased conductivity. Ultimately, the developed equations accurately predict the onset of percolation and conductivity, validated by real experimental data.

Upheaval of Negative Dielectric Permittivity and Semiconductor to Metallic Transition in a Thermally Induced Sn-Doped β-Ga2O3 (-201) Single Crystal.

Thermally induced dielectric and conductivity properties of an Sn-doped β-Ga2O3 (-201) single crystal were investigated by frequency-domain impedance spectroscopy in the frequency window from 100 Hz to 1 MHz with temperatures between 293 and 873 K. The (-201) plane-orientated single crystalline nature and the presence of an Sn dopant in β-Ga2O3 were confirmed by X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectroscopy. Two different trends of impedance spectra have been discussed by the modulation of relaxation times and semiconductor to metallic transition after ∼723 K due to activation of a significant number of Sn dopants and their movements with temperature. The negative impedance values were encountered in the Nyquist plots (Z' vs Z″) after 573 K and constitute a reverse movement after 723 K with temperature. The average normalized change (ΔZ'/Δf)/Z0 of impedance exhibits a broad downward relaxation plateau near 723 K, indicating a weak electrical transition. The increases in the positive value of the dielectric constant (εr') below a percolating threshold temperature 573 K is attributed to the interfacial and dipolar polarizations, and the plasma oscillation of delocalized electrons governed by the Drude theory is responsible for the negative dielectric constant above 573 K. The 3D projections of the real dielectric constant create a sharp downward sinkhole near 723 K, indicating the existence of negative dielectric permittivity. The electrical conductivity dramatically changes its trends after 523 K and confirms a transition from hopping conduction (dielectric or semiconductor) following Jonscher's power law to metallic conduction by Drude theory. Below the percolating threshold temperature, a nonoverlapping small polaron tunneling conduction mechanism was unveiled with defect-induced activation energy of 0.21 eV. The Sn-doped β-Ga2O3 exhibits unique and tailored electromagnetic responses with temperatures that can be associated with a variety of applications in electromagnetic wave manipulations, cloaking devices, antennas, sensors, medical imaging, seismic wave propagation, etc.

Electronic States of Single Perovskite Quantum Dots in Weak and Strong Interaction Regimes: Implications in Electrically Pumped Quantum Emitters.

We investigate the effect of Coulomb interactions on the electronic states of a single perovskite quantum dot (PQD), CsPbBr3, through scanning tunneling microscopy/spectroscopy (STM/S). Under a weak interaction regime, where the time-averaged occupation of electrons in a PQD remains zero, the peaks observed in the differential tunneling conductance (dI/dV) spectrum correspond to the single-particle density of states (DOS) without any electron-electron correlation. However, with a shorter tunnel distance between the STM tip and PQD, additional electrons are trapped in the QD, leading to a strong interaction regime with well-defined electronic fine structures due to the lifting of spin degeneracy in the conduction bands. Interestingly, we observe that the strong Coulomb interaction can modify the spin-orbit coupling (SOC) strength in the PQDs. We have concluded that the energy levels under a strong electron-electron interaction regime are of utmost importance since they will be applicable to electrically pumped PQD-based single photon quantum emitters.

Behavior of self-sensing masonry structures exposed to high temperatures and rehydration

High temperatures can compromise the structural integrity of structural masonry. Therefore, assessing the post-fire mechanical behavior is crucial for selecting suitable rehabilitation methods. Recent research has proposed the application of self-sensing cementitious composites for monitoring strains, stresses, and damage of structural masonry in room temperature. No previous research has been found on the self-sensing performance of fire-damaged masonry prisms exposed to elevated temperatures, with or without subsequent rehydration. Masonry prisms with integrated self-sensing joints and blocks were produced and exposed to different maximum temperature levels, followed or not by rehydration. Then, experimental tests for determination of compressive strength, modulus of elasticity, gauge factor (GF) and damage-detection performance were carried out. The exposure to 300 ºC caused a 7.4 % decrease in compressive strength and a 44.5 % reduction in elastic modulus. Rehydration methods had negligible effects in this case. After 600 ºC, substantial reductions of 42.2 % in compressive strength and 81.5 % in elastic modulus occurred. In this case, rehydration led to a 15.9 % increase in compressive strength and a 117.4 % increase in elastic modulus. Regardless of the exposure temperature, the predominant rupture mode initiated by vertical cracks originating at the block-mortar interfaces. After 300 ºC, slight GF increases occurred due to the thermal decomposition of hydrates of the cementitious matrix, while exposure to 600 ºC resulted in high GF increases due to partial oxidation of nanomaterials and substantial microcracking propagation. Post-fire curing improved the GF by sealing microcracks with nonconductive rehydration products and enhancing tunneling conduction mechanisms. The self-sensing prisms also demonstrated the ability for real-time damage detection and quantification, providing valuable predictive insights into the propagation of damage.

Temperature dependent electrical resistance and mesoscopic electronic transport mechanisms on aerographite and single-walled carbon nanotube aerogel

We investigate temperature dependent electrical resistance properties of aerographite and single-walled carbon nanotube (SWCNT) aerogel in the temperature range of 2–300 K by employing the four-probe method with magnetic field effects (in the range 0–9 T, in steps of 2 T). The current–voltage (I–V) curves were taken for several temperatures varying from 5 to 300 K, and the electrical resistance values of aerographite and SWCNT aerogel were decreased from 7.30 Ω (5 K, 0 T) to 4.88 Ω (300 K, 0 T) and 22.56 Ω (5 K, 0 T) to 0.99 Ω (300 K, 0 T) with temperature increases, respectively. Experimental results show that the electrical resistance falls exponentially as the temperature increases. Such temperature dependence of R(T) points to a form of tunneling conduction or hopping. Two mesoscopic mechanisms for electronic transport, fluctuation-induced tunneling conduction (FITC) and variable range hopping (VRH), are employed to explicate possible electrical conduction mechanisms occurring in aerographite and SWCNT aerogel, respectively. These mainly result in disorder-induced symmetry-breaking, which are modified by their structural symmetries and electronic band structures, both play important roles in temperature dependent electrical resistance properties of aerographite and SWCNT aerogel. Characteristic parameters (T0, T1, and R0) have been estimated using the morphology and the uncertainty principle for aerographite and the percolation theory for SWCNT aerogel. While the FITC mechanism captures a wide temperature range of data for aerographite, the VRH model provides an explanation for SWCNT aerogel. This study provides groundwork for further development of carbon aerogel systems with high conductivity in large-scale preparation.

Development of Lead‐Free Defect Brownmillerite Perovskite Ceramic LiBiFeMnO5 Solid Solution for Electronic Devices

This article reports the fabrication (synthesis) and characterizations (structural, microstructural topographic surface, dielectric, transport, impedance, current–voltage, and resistive properties) of a complex lead‐free defect perovskite material of composition LiBiFeMnO5. A preliminary structural investigation of the X‐ray diffraction pattern using N‐TREOR09 methods shows monoclinic symmetry. The scanning electron microscopic spectrum examines the sample's microstructural topographic surface, fractal study, and roughness (using the standard ISO25178). The analysis of Maxwell–Wagner dielectric dispersion, relaxation, and transport mechanisms is investigated utilizing dielectric, impedance, and conductivity spectrum accumulated within the experimental frequency of (1 kHz–1 MHz) at different temperatures (30–500 °C). A nonoverlapping small polaron tunneling conduction mechanism and correlated barrier hopping mechanism in the material have helped to understand its conduction phenomena. The Ohmic and space–charge limited conduction mechanisms are investigated by the slope of the logarithmic electric field (E) and current density (J). The thermistor constant (β) is determined to be 1982.87. The temperature coefficient of resistance is found to be −0.00419, which may be suitable for negative temperature coefficient thermistors, sensors, and other related devices.

Minigap-induced negative differential resistance in multilayer MoS2 -based tunnel junctions

Despite extensive research, the high-energy band properties of transition metal dichalcogenides remain unexplored. Here, we reveal that a multilayer MoS2-based tunnel junction exhibits substantial negative differential resistance (NDR) owing to the presence of a minigap, which is the energy gap between the upper and lower bands of the valence band at the Γ point. We fabricated a highly p-doped multilayer p+−MoS2/h-BN/p+−MoS2 tunnel junction. When a bias is applied across the junction, holes at the Fermi level at the Γ point in the valence band of the source-side p+−MoS2 resonantly tunnel to the drain-side p+−MoS2 with momentum conservation. When the energy of the injected hole coincides with the minigap of the drain-side p+−MoS2, the tunneling conductance is suppressed; thus, NDR is observed in the current-voltage characteristics. We identified minigap-induced NDR over a broad range of MoS2 thicknesses, including the bulk, that was observable even at room temperature. Published by the American Physical Society 2024

Microstructural, Electrical, and Tribomechanical Properties of Mo-W-C Nanocomposite Films.

This study investigates the phase composition, microstructure, and their influence on the properties of Mo-W-C nanocomposite films deposited by dual-source magnetron sputtering. The synthesised films consist of metal carbide nanograins embedded in an amorphous carbon matrix. It has been found that nanograins are composed of the hexagonal β-(Mo2 + W2)C phase at a low carbon source power. An increase in the power results in the change in the structure of the carbide nanoparticles from a single-phase to a mixture of the β-(Mo2 + W2)C and NaCl-type α-(Mo + W)C(0.65≤k≤1) solid-solution phases. The analysis of electrical properties demonstrates that the nanograin structure of the films favours the occurrence of hopping conductivity. The double-phase structure leads to a twofold increase in the relaxation time compared to the single-phase one. Films with both types of nanograin structures exhibit tunnelling conductance without the need for thermal activation. The average distance between the potential wells produced by the carbide nanograins in nanocomposite films is approximately 3.4 ± 0.2 nm. A study of tribomechanical properties showed that Mo-W-C films composed of a mixture of the β-(Mo2 + W2)C and α-(Mo + W)C(0.65≤k≤1) phases have the highest hardness (19-22 GPa) and the lowest friction coefficient (0.15-0.24) and wear volume (0.00302-0.00381 mm2). Such a combination of electrical and tribomechanical properties demonstrates the suitability of Mo-W-C nanocomposite films for various micromechanical devices and power electronics.

Interplay between magnetic gap and quasi-particle lifetime in topological insulator ferromagnet/f-wave superconductor junctions

Using the modified Blonder–Tinkham–Klapwijk (BTK) theory, the interplay between the lifetime of quasi particles and the magnetic gap in a topological insulator-based ferromagnet/f-wave superconductor (TI-based FM/f–wave SC) tunnel structure is theoretically studied. Two symmetries of f 1 and f 2 waves are considered for superconducting pairing states. The results indicate that reducing the finite quasi-particle lifetime will induce a transformation of energy-gap peaks into a zero-bias peak in tunneling conductance spectrum, as well as a transformation of energy-gap dips into a zero-bias dip in shot noise spectrum, ultimately resulting in the smoothing of the zero-bias conductance peak and the zero-bias shot noise dip. An increase in magnetic gap will suppress the tunnel conductance and shot noise when the conventional Andreev retro-reflection dominates, but will enhance them when the specular Andreev reflection is dominant. Both specular Andreev reflection and conventional Andreev retro-reflection will be enhanced as the quasi-particle lifetime increases. When Fermi energy equals the magnetic gap, shot noise and tunneling conductance vanish across all energy ranges. These findings not only contribute to a better understanding of specular Andreev reflection in the FM/f–wave SC junction based on TIs but also provide insights for experimentally determining the f-wave pairing symmetry.

Influences of defective interphase and contact region among nanosheets on the electrical conductivity of polymer graphene nanocomposites

In the current article, a defective interface is characterized by “Dc,” representing the smallest diameter of nanosheets crucial for effective conduction transfer from the conductive filler to the medium, and by “ψ” as interfacial conduction. These parameters define the effective aspect ratio and operational volume fraction of graphene in the samples. The resistances of the graphene and polymer layer in contact zones are also considered to determine the contact resistance between adjacent nanosheets. Subsequently, a model for the tunneling conductivity of composites is proposed based on these concepts. This innovative model is validated by experimental data. Additionally, the effects of various factors on the conductivity of the composites and contact resistance are analyzed. Certain parameters such as filler concentration, graphene conductivity, interfacial conduction, and “Dc” do not affect the contact resistance due to the superconductivity of the nanosheets. However, factors like thin and large nanosheets, short tunneling distance (d), high interfacial conduction (ψ), low “Dc,” and low tunnel resistivity (ρ) contribute to increased conductivity in nanocomposites. The maximum conductivity of 0.09 is obtained at d = 2 nm and ψ = 900 S/m, but d > 6 nm and ψ < 200 S/m produce an insulated sample. Additionally, the highest conductivity of 0.11 S/m is achieved with Dc = 100 nm and ρ = 100 Ω m, whereas the conductivity approaches 0 at Dc = 500 nm and ρ = 600 Ω m.

Sensing mechanisms of nanomodified Portland cement composites

Mortar sensors were fabricated as beams incorporating different amounts of carbon nanofibers (CNFs) synthesized in-situ on cement particles. Changes in electrical resistivity were measured and compared to recorded changes in compressive stress, temperature, and humidity. Sensing mechanisms and corresponding models were developed. The findings of the study indicate that the piezoresistive effect is influenced by the critical concentration of CNFs inside the composite matrix and the tunneling effect. In addition, water absorption and desorption, as well as the amount of chemically bound water played an important role in humidity sensing. Thermal fluctuation-induced tunneling conduction was dominant for the temperature sensitivity.

A Human Friendly Self-Assembled Triboelectric Sensor for Multifunctional Tactile Sensing.

Obtaining bioenergy from human movement is not only a prospective complementation to electrochemical power supply such as batteries in portable electronics but also a decipherable process for developing self-powered sensors that can simultaneously monitor the physiological movement. In this study, a low-cost, robust, and environmentally friendly triboelectric nanogenerator (TENG) was prepared with enhanced mechanical stability and tunneling conductivity on the base of cotton fabric. The as-designed TENG may produce energy sustainably by physical movements, and it can yield an amazing 417 V open-circuit voltage, 11.7 μA short-circuit current, and 237.60 mW/m2 excellent power density, showcasing its potential for efficient energy conversion in the single-electrode mode. Besides, such a design also shows real-time tactile perception ability toward human physiological signal and body motion where intelligent application of these environmental benign TENGs in sports and writing training were demonstrated, thus providing vital instruction for the creation of versatile and sustainable TENGs in the Internet of Things era.

High gain NiO/ZnO heterojunction photodiodes operated in Deep-ultraviolet region

Epitaxially matched (0001) Al2O3 single substrates are utilized to design p-n heterojunctions (p-NiO/n-ZnO) as they offer low defect density for device fabrication due to small lattice mismatches. Using the radio frequency sputtering technique, the NiO/ZnO thin film-based heterojunction has been fabricated by varying the n-type film's (ZnO) thickness for ultra-violet (UV) photodiode application. It has been investigated how different ZnO film thicknesses affect junction parameters and photoresponse properties. The high photosensitivity (∼ 104), enhanced current gain (∼ 105) and fast response obtained at very low UV intensity (0.62μW/cm2) at 300 nm wavelength are attributed to the internal gain mechanism (recombination tunnelling and space-charge limited current conduction with the remarkable effect of the presence of excess free oxygen) in these devices. The prepared heterojunction photodiode with high speed and deep-UV sensitivity can be a potential solution for visible blind UV detection.

Machine Learning the Disorder Landscape of Majorana Nanowires.

We develop a practical machine learning approach to determine the disorder landscape of Majorana nanowires by using training of the conductance matrix and inverting the conductance data in order to obtain the disorder details in the system. The inversion carried out through machine learning using different disorder parametrizations turns out to be unique in the sense that any input tunnel conductance as a function of chemical potential and Zeeman energy can indeed be inverted to provide the correct disorder landscape. Our work opens up a qualitatively new direction of directly determining the topological invariant and the Majorana wave-function structure corresponding to a transport profile of a device using simulations that quantitatively match the specific conductance profile. In addition, this also opens up the possibility for optimizing Majorana systems by figuring out the (generally unknown) underlying disorder only through the conductance data. An accurate estimate of the applicable spin-orbit coupling in the system can also be obtained within the same scheme.

Evaluation of strain-sensitive behavior in elastomeric conductive nanocomposites containing carbon nanotubes-a finite element-percolation model approach

A finite element (FE)-percolation model approach is developed to predict the strain-sensitive response of the three-dimensional (3D) representative volume element (RVE) of carbon nanotube (CNT)-elastomeric nanocomposite. In the simulation model, CNTs are modeled as solid, impenetrable cylinders inside a cubic insulating matrix. FE simulation is performed to evaluate the structural response of the RVE under applied strain. The FE model updates the locations of the CNTs in the deformed RVE. The paths are found using a suitable 3D resistance network associated with different percolation paths involved in the critical distance criterion. The percolation model utilizes the paths found to identify the electrical circuit for predicting tunneling conductivity. The simulating algorithm is used to study the influence of tunneling barrier height, nanotube volume fraction, and geometrical aspects. The lowest critical distance criterion is achieved for higher volume fractions and the most heightened sensitivity is obtained for lower CNT aspect ratios.