Spin Tunneling Research Articles

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ≈500 ps and spin diffusion length ≈1.6 μm in graphene with tunnel spin polarization ≈11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies.

Spin transport and tunnel magnetoresistance in ferromagnetic graphene/Thue–Morse graphene superlattice double junction

Abstract We have theoretically investigated the spin transport properties and tunnel magnetoresistance of the double junction, which consists of the fifth-stage Thue–Morse graphene superlattice (TMGSL) or periodic graphene superlattice (PGSL) and three ferromagnetic graphene (FG) electrodes. The results indicate that the middle ferromagnetic graphene stripe can lead to obvious defect effect on the conductance. Meanwhile, the FG/TMGSL double junction possesses more marked defect effect when compared to the FG/PGSL double junction, along with larger and more irregular oscillation conductance and tunnel magnetoresistance.

Quantum spin oscillation generated by an acoustic wave in a molecular magnet coupled to a torsional resonator

In the presence of a sound wave, we study the quantum beat of a tunneling spin that is rigidly coupled to a nanoresonator. As the resonator frequency is large compared to the tunneling splitting and the coupling strength between the spin and the oscillator is moderate, the magnetization displays a series of plateaus with quantum beats during the longitudinal field sweep. This generates entanglement of the nanospin and the oscillator, which results in an abrupt change in the rotation angle with the beat structure in the first step. An optimal condition for multiple transitions that produce a quantum beat structure is proposed.

Tunneling conductance and spin transport in clean ferromagnet/ferromagnet/superconductor heterostructures

We present a transfer matrix approach that combines the Blonder-Tinkham-Klapwijk (BTK) formalism and self-consistent solutions to the Bogolibuov-de Gennes (BdG) equations and use it to study the tunneling conductance and spin transport in ferromagnet (${\rm F}$)-superconductor (${\rm S}$) trilayers (${\rm F_1F_2 S}$) as functions of bias voltage. The self-consistency ensures that the spin and charge conservation laws are properly satisfied. We consider forward and angularly averaged conductances over a broad range of the strength of the exchange fields and ${\rm F}$ thicknesses, as the relative in-plane magnetization angle, $\phi$, between the two ferromagnets varies. The $\phi$-dependence of the self-consistent conductance curves in the trilayers can differ substantially from that obtained via a non-self-consistent approach. The zero bias forward conductance peak exhibits, as $\phi$ varies, resonance effects intricately associated with particular combinations of the geometrical and material parameters. We find, when the magnetizations are non-collinear, signatures of the anomalous Andreev reflections in the subgap regions of the angularly averaged conductances. When ${\rm F_1}$ is half-metallic, the angularly averaged subgap conductance chiefly arises from anomalous Andreev reflection. The in-plane components of the spin current are strongly bias dependent, while the out-of-plane spin current component is only weakly dependent upon voltage. The components of the spin current aligned with the local exchange field of one of the F layers are conserved in that layer and in the S region, while they oscillate in the other layer. We compute the spin transfer torques, in connection with the oscillatory behavior of spin currents, and verify that the spin continuity equation is strictly obeyed in our method.

Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride.

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene.

Haldane-like antiferromagnetic spin chain in the large anisotropy limit

We consider the one dimensional, periodic spin chain with $N$ sites, similar to the one studied by Haldane \cite{hal}, however in the opposite limit of very large anisotropy and small nearest neighbour, anti-ferromagnetic exchange coupling between the spins, which are of large magnitude $s$. For a chain with an even number of sites we show that actually the ground state is non degenerate and given by a superposition of the two N\'eel states, due to quantum spin tunnelling. With an odd number of sites, the N\'eel state must necessarily contain a soliton. The position of the soliton is arbitrary thus the ground state is $N$-fold degenerate. This set of states reorganizes into a band. We show that this occurs at order $2s$ in perturbation theory. The ground state is non-degenerate for integer spin, but degenerate for half-odd integer spin as is required by Kramer's theorem \cite{kram}.

Time-dependent quantum transport: Causal superfermions, exact fermion-parity protected decay modes, and Pauli exclusion principle for mixed quantum states

We extend the recently developed causal superfermion approach to the real-time diagrammatic transport theory to time-dependent decay problems. Its usefulness is illustrated for the Anderson model of a quantum dot with tunneling rates depending on spin due to ferromagnetic electrodes and/or spin polarization of the tunnel junction. This approach naturally leads to an exact result for one of the time-dependent decay modes for any value of the Coulomb interaction compatible with the wideband limit. We generalize these results to multilevel Anderson models and indicate constraints they impose on renormalization-group schemes in order to recover the exact noninteracting limit.(i) We first set up a second quantization scheme in the space of density operators constructing ``causal'' field superoperators using the fundamental physical principles of causality/probability conservation and fermion-parity superselection (univalence). The time-dependent perturbation series for the time evolution is renormalized by explicitly performing the wideband limit on the superoperator level. As a result, the occurrence of destruction and creation superoperators are shown to be tightly linked to the physical short- and long-time reservoir correlations, respectively. This effective theory takes as a reference a damped local system, which may also provide an interesting starting point for numerical calculations of memory kernels in real time. (ii) A remarkable feature of this approach is the natural appearance of a fermion-parity protected decay mode which can be measured using a setup proposed earlier [Phys. Rev. B 85, 075301 (2012)]. This mode can be calculated exactly in the fully Markovian, infinite-temperature limit by leading-order perturbation theory, but surprisingly persists unaltered for finite temperature, for any interaction and tunneling spin polarization. (iii) Finally, we show how a Liouville-space analog of the Pauli principle directly leads to an exact expression in the noninteracting limit for the time evolution, extending previous works by starting from an arbitrary initial mixed state including spin and pairing coherences and two-particle correlations stored on the quantum dot. This exact result is obtained already in finite-order renormalized perturbation theory, which surprisingly is not quadratic but quartic in the field superoperators, despite the absence of Coulomb interaction. The latter fact we relate to the time evolution of the two-particle component of the mixed state, which is just the fermion-parity operator, a cornerstone of the formalism. We illustrate how the super-Pauli-principle also simplifies problems with nonzero Coulomb interaction.

Spin-dependent thermoelectric effects in transport through a nanoscopic junction involving a spin impurity

Conventional and spin-related thermoelectric effects in transport through a magnetic tunnel junction with a large-spin impurity, such as a magnetic molecule or atom, embedded into the corresponding barrier are studied theoretically in the linear-response regime. The impurity is described by the giant spin Hamiltonian, with both uniaxial and transverse magnetic anisotropy taken into account. Owing to the presence of transverse component of magnetic anisotropy, spin of a tunneling electron can be reversed during scattering on the impurity, even in the low temperature regime. This reversal appears due to exchange interaction of tunneling electrons with the magnetic impurity. We calculate Seebeck and spin Seebeck coefficients, and analyze their dependence on various parameters of the spin impurity and tunnel junction. In addition, conventional and spin figures of merit, as well as the electronic contribution to heat conductance are considered. We also show that pure spin current can be driven by a spin bias applied to the junction with spin impurity, even if no electron transfer between the electrodes can take place. The underlying mechanism employs single-electrode tunneling processes (electrode-spin exchange interaction) and the impurity as an intermediate reservoir of angular momentum.

Observation of quantum-tunnelling-modulated spin texture in ultrathin topological insulator Bi2Se3 films.

Understanding the spin-texture behaviour of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nanodevices. Here, by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunnelling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We report a systematic binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultrathin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunnelling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model that captures this delicate relationship between quantum tunnelling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nanodevice.

Rotating entangled states of an exchange-coupled dimer of single-molecule magnets

An antiferromagnetically exchange-coupled dimer of single molecule magnets which possesses a large spin tunneling has been investigated. For this system, the ground and first excited states are entangled states, and the Hamiltonian is effectively similar to that of a two-state system at 2sth order in perturbation theory; thus this system can be mapped to an entangled pseudospin 1/2 particles. We study the effects of interaction and rotation of this system about its staggered easy-axis direction. The corresponding Hamiltonian of a rotated two-state entangled spin system is derived with its exact low-energy eigenstates and eigenvalues. We briefly discuss the effect of a dissipative environment on this rotated two-state system.

Spin conductance and tunnelling magnetoresistance in a fractal graphene superlattice with two ferromagnetic graphene electrodes

We investigate the spin-polarized transport properties of relativistic electrons tunnelling through a fractal graphene superlattice (FGSL) sandwiched between two ferromagnetic graphene (FG) electrodes, where the FGSL can be regarded as a symmetric periodic graphene superlattice (SPGSL) with defects. The spin conductance and the tunnelling magnetoresistance of the FG/FGSL/FG junction are numerically calculated and compared with those of the FG/SPGSL/FG junction. We find that the spin conductance and the tunnelling magnetoresistance reach a minimum value in the vicinity of the new Dirac point and can be greatly modulated not only by the Fermi energy and the exchange splitting energy, but also by the structural configuration. Compared to those of the FG/SPGSL/FG junction, the spin conductance and the tunnelling magnetoresistance of the FG/FGSL/FG junction can exhibit a stronger and more irregular oscillation with increasing Fermi energy, along with typical high-frequency quasiperiodic oscillations as the barrier height increases. We also find that the maximum value of the tunnelling magnetoresistance is robust against change of the lattice parameters and the profile of the graphene superlattice, but dependent on the Fermi energy and the exchange splitting energy.

Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin-dependent tunnelling

We inserted non-magnetic layers of Au and Cu into sputtered AlO-based magnetic tunnel junctions and Meservey–Tedrow junctions in order to study their effect on tunnelling magnetoresistance (TMR) and spin polarization (TSP). When either Au or Cu are inserted into a Co/AlO interface, we find that TMR and TSP remain finite and measurable for thicknesses up to several nanometres. High-resolution transmission electron microscopy shows that the Cu and Au interface layers are fully continuous when their thickness exceeds , implying that spin-polarized carriers penetrate the interface noble metal to distances exceeding this value. A power law model based on exchange scattering is found to fit the data better than a phenomenological exponential decay. The discrepancy between these length scales and the much shorter ones reported from x-ray magnetic circular dichroism studies of magnetic proximitization is ascribed to the fact that our tunnelling transport measurements selectively probe s-like electrons close to the Fermi level. When a 0.1 nm thick Cu or Au layer is inserted within the Co, we find that the suppression of TMR and TSP is restored on a length scale of , indicating that this is a sufficient quantity of Co to form a fully spin-polarized band structure at the interface with the tunnel barrier.

Hanle measurements of electrodeposited Fe/GaAs spin tunnel contacts

We report spin transport in electrodeposited Fe/n-GaAs tunnel diodes via three-terminal Hanle measurements. For temperatures between 20 K and 150 K, the spin resistance was up to 20 times higher than expected from theoretical calculations and 1000 times larger compared to a vacuum-deposited counterpart. This higher spin resistance was correlated with a higher contact resistance, and a higher concentration of oxygen impurities in the electrodeposited Fe film and interface, as detected via x-ray photoelectron and Auger spectroscopies, and inferred from Fe film nucleation rates. These results can be explained via a small effective tunnel-contact area of 5%, but extra spin filtering via interfacial states or magnetic oxide layers cannot be ruled out. The spin diffusion times (8.5 ± 0.4 ns to 1.8 ± 0.4 ns, for 20 K to 150 K) extracted from Lorentzian fits were in good agreement with values obtained from earlier 4-terminal Hanle measurements (7.8 ± 0.4 ns to 3.2 ± 0.4 ns, for 25 K to 77 K), both 10 times slower than reported vacuum-deposited contacts.

Current driven magnetization dynamics of a self-polarised synthetic ferrimagnet

Spin torque driven excitations in spin valves and tunnel junctions are often investigated for a two magnetic layer system for which a polarizer (fixed magnetization) and a free layer can be distinguished. In the search for improved microwave properties and to understand the role of different coupling mechanisms between the magnetic layers, here, the excitation spectrum of an exchange coupled two layer synthetic ferrimagnet (SyF) system is investigated numerically with spin momentum transfer acting on both layers simultaneously. This self-polarised two layer system does not contain an external polarizer, and excitation of coupled modes arises due to the mutual spin transfer torque and the Ruderman-Kittel-Kasuya-Yosida interlayer exchange coupling. The current-field state diagrams of static and dynamic states are reported as a function of the interlayer exchange coupling strength. The numerically determined critical boundaries are well reproduced by an analytical stability analysis. The dynamic steady states reveal an optic-like mode at low magnetic fields, which becomes progressively acoustic-like for increased magnetic fields and currents. The frequency of these modes can be tuned by the film thickness and the strength of the interlayer exchange interaction. The results presented here will provide an important guide for designing spin torque oscillators that exploit the dynamic coupling between layers and, furthermore, they will provide a basis to test analytical models of spin torque driven coupled excitations.

Voltage tuning of thermal spin current in ferromagnetic tunnel contacts to semiconductors

Spin currents are paramount to manipulate the magnetization of ferromagnetic elements in spin-based memory, logic and microwave devices, and to induce spin polarization in non-magnetic materials. A unique approach to create spin currents employs thermal gradients and heat flow. Here we demonstrate that a thermal spin current can be tuned conveniently by a voltage. In magnetic tunnel contacts to semiconductors (silicon and germanium), it is shown that a modest voltage (~200 mV) changes the thermal spin current induced by Seebeck spin tunnelling by a factor of five, because it modifies the relevant tunnelling states and thereby the spin-dependent thermoelectric parameters. The magnitude and direction of the spin current is also modulated by combining electrical and thermal spin currents with equal or opposite sign. The results demonstrate that spin-dependent thermoelectric properties away from the Fermi energy are accessible, and open the way towards tailoring thermal spin currents and torques by voltage, rather than material design.

Carbon Nanoelectronics

Initiated by the first single-walled carbon nanotube (SWCNT) transistors [1,2], and reinvigorated with the isolation of graphene [3], the field of carbon-based nanoscale electronic devices and components (Carbon Nanoelectronics for short) has developed at a blistering pace [4]. Comprising a vast number of scientists and engineers that span materials science, physics, chemistry, and electronics, this field seeks to provide an evolutionary transition path to address the fundamental scaling limitations of silicon CMOS [5]. Concurrently, researchers are actively investigating the use of carbon nanomaterials in applications including back-end interconnects, high-speed optoelectronic applications [6], spin-transport [7], spin tunnel barrier [8], flexible electronics, and many more. [...]

Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport

The coupled imperatives for reduced heat dissipation and power consumption in high-density electronics have rekindled interest in devices based on tunnelling. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, layer uniformity, interface stability and electronic states that severely complicate fabrication and compromise performance. Two-dimensional materials such as graphene obviate these issues and offer a new paradigm for tunnel barriers. Here we demonstrate a homoepitaxial tunnel barrier structure in which graphene serves as both the tunnel barrier and the high-mobility transport channel. We fluorinate the top layer of a graphene bilayer to decouple it from the bottom layer, so that it serves as a single-monolayer tunnel barrier for both charge and spin injection into the lower graphene channel. We demonstrate high spin injection efficiency with a tunnelling spin polarization >60%, lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the Hanle effect.

Electrically controlled spin polarization and selection in a topological insulator sandwiched between ferromagnetic electrodes

We theoretically investigate the electrically controllable spin polarization and selective efficiency of the edge state Dirac electron in a two-dimensional topological insulator (TI) sandwiched between ferromagnetic (FM) electrodes by using the method of Keldysh nonequilibrium Green's function. A nearly full spin polarization of the topological edge state with giant inversion of ∼80% is observed, which is much higher than the value previously reported. Moreover, the selective efficiency for spin-up electrons under the modulation of the parallel configuration of FM electrodes has been demonstrated to be larger than 95% for the first time, while that for spin-down electrons in the antiparallel case is higher than 90% in a wide energy range, owing to the inter-edge spin tunneling induced backscattering and spin dephasing effect. The obtained results may provide a deeper understanding of the TI edge states and a valuable guidance to design spin switch and filter with high on-off speed and selective efficiency based on TIs.

High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nanoelectronic, optoelectronic, and spintronic applications. Here, we investigate the field-effect transistor behavior of MoS2 with ferromagnetic contacts to explore its potential for spintronics. In such devices, we elucidate that the presence of a large Schottky barrier resistance at the MoS2/ferromagnet interface is a major obstacle for the electrical spin injection and detection. We circumvent this problem by a reduction in the Schottky barrier height with the introduction of a thin TiO2 tunnel barrier between the ferromagnet and MoS2. This results in an enhancement of the transistor on-state current by 2 orders of magnitude and an increment in the field-effect mobility by a factor of 6. Our magnetoresistance calculation reveals that such integration of ferromagnetic tunnel contacts opens up the possibilities for MoS2-based spintronic devices.

Ultrafast spin tunneling and injection in coupled nanostructures of InGaAs quantum dots and quantum well

We investigate the electron-spin injection dynamics via tunneling from an In0.1Ga0.9As quantum well (QW) to In0.5Ga0.5As quantum dots (QDs) in coupled QW-QDs nanostructures. These coupled nanostructures demonstrate ultrafast (5 to 20 ps) spin injection into the QDs. The degree of spin polarization up to 45% is obtained in the QDs after the injection, essentially depending on the injection time. The spin injection and conservation are enhanced with thinner barriers due to the stronger electronic coupling between the QW and QDs.