Tunneling Gap Research Articles

Postoperative Tunnel Widening, Elliptical Aperture Shape, and No Preservation of the Remnant Are Related to the Tendon Graft–Bone Tunnel Gap Formation at the Intra-Articular Aperture After Double-Bundle Anterior Cruciate Ligament Reconstruction

To examine the bone-tendon healing at the posterolateral (PL) femoral tunnel aperture by second-look arthroscopy after double-bundle anterior cruciate ligament reconstruction (ACLR), and assess the risk factors for impaired healing at the tendon-bone interface. A consecutive series of knees undergoing primary double-bundle ACLR using hamstring tendon autografts were enrolled in the study. The exclusion criteria were as follows: previous knee surgeries, concomitant ligamentous and osseous procedures, and a lack of second-look arthroscopy or postoperative computed tomography data for the analysis. Cases in which a gap was identified between the graft and tunnel aperture during the second-look arthroscopic examination were classified as the gap formation (GF) group. A multivariate logistic regression analysis was performed to assess the relationship between the GF and variables that may determine prognosis. A total of 54 knees that met the inclusion/exclusion criteria were included in the study. Second-look arthroscopy revealed the GF at the PL aperture in 22 of the 54 knees (40%). The time period from surgery to arthroscopy averaged 16 months. In the multivariate logistic regression analysis, the percentage tunnel widening at 1 year on computed tomography (odds ratio, 10.4; 95% confidence interval [CI] 1.56-69.2), ellipticity of the tunnel aperture (odds ratio, 3.57; 95% CI, 0.79-16.11), and no ACL remnant preservation (odds ratio, 5.99; 95% CI, 1.23-29.06) were identified as prognostic factors significantly related to graft-bone tunnel GF. Second-look arthroscopy revealed GF at the PL graft-bone tunnel interface in 40% of the knees after double-bundle ACLR. Incomplete healing of the interface, as evidenced by a graft-bone gap at the tunnel aperture, was associated with tunnel widening 1-year postsurgery, an elliptical aperture shape, and no preservation of the ACL remnant. Ⅲ, retrospective case-control study.

Electrical Manipulation of Quantum Coherence in a Two-Level Molecular System.

We report the manipulation of ultrafast quantum coherence of a two-level single hydrogen molecular system by employing static electric field from the sample bias in a femtosecond terahertz scanning tunneling microscope. A H_{2} molecule adsorbed on the polar Cu_{2}N surface develops an electric dipole and exhibits a giant Stark effect. An avoided crossing of the quantum state energy levels is derived from the resonant frequency of the single H_{2} two levels in a double-well potential. The dephasing time of the initial wave packet can also be changed by applying the electric field. The electrical manipulation for different tunneling gaps in three dimensions allows quantification of the surface electrostatic fields at the atomic scale. Our work demonstrated the potential application of molecules as controllable two-level molecular systems.

Measurement of the Quantum Tunneling Gap in a Dysprosocenium Single-Molecule Magnet.

We perform magnetization sweeps on the high-performing single-molecule magnet [Dy(Cpttt)2][B(C6F5)4] (Cpttt = C5H2tBu3-1,2,4; tBu = C(CH3)3) to determine the quantum tunneling gap of the ground-state avoided crossing at zero-field, finding a value on the order of 10-7 cm-1. In addition to the pure crystalline material, we also measure the tunnel splitting of [Dy(Cpttt)2][B(C6F5)4] dissolved in dichloromethane (DCM) and 1,2-difluorobenzene (DFB). We find that concentrations of 200 or 100 mM [Dy(Cpttt)2][B(C6F5)4] in these solvents increases the size of the tunneling gap compared to the pure sample, despite a similarity in the strength of the dipolar fields, indicating that either a structural or vibrational change due to the environment increases quantum tunneling rates.

Inelastic Neutron Scattering Measurement of the Ground State Tunneling Gap in Tb and Ho Analogues of a Dy Field-Induced Single-Molecule Magnet.

Recent advances in single-molecule magnet (SMM) research have placed great value on interpretation of inelastic neutron scattering (INS) data for rare earth (RE)-containing SMMs. Here, we present the synthesis of several rare earth complexes where combined magnetic and INS studies have been performed, supported by ab initio calculations. The reaction of rare earth nitrate salts with 2,2'-bipyridine (2,2'-bpy) and tetrahalocatecholate (X4Cat2-, X = Br, Cl) ligands in methanol (MeOH) afforded two new families of compounds [RE(2,2'-bpy)2(X4Cat)(X4CatH)(MeOH)] (X = Br and RE = Y, Eu, Gd, Tb, Dy, Ho, Yb for 1-RE; X = Cl and RE = Y, Tb, Dy, Ho, and Yb for 2-RE). Addition of triethylamine (Et3N) to the reaction mixture delivered Et3NH[RE(2,2'-bpy)2(Br4Cat)2] (3-RE, RE = Er and Yb). Interestingly, cerium behaves differently to the rest of the series, generating (2,2'-bpyH)2[Ce(Br4Cat)3(2,2'-bpy)] (4-Ce) with tetravalent Ce(IV) in contrast to the trivalent metal ions in 1-3. The static magnetic properties of 1-RE (RE = Gd, Tb, Dy and Ho) were investigated in conjunction with INS measurements on 1-Y, 1-Tb, and 1-Ho to probe their ground state properties and any crystal field excitations. To facilitate interpretation of the INS spectra and provide insight into the magnetic behavior, ab initio calculations were performed using the single-crystal X-ray diffraction structural data of 1-RE (RE = Tb, Dy and Ho). The ab initio calculations indicate ground doublets dominated by the maximal angular momentum projection states of Kramers type for 1-Dy and Ising type for 1-Tb and 1-Ho. Dynamic magnetic susceptibility measurements indicate that 1-Dy exhibits slow magnetic relaxation in the presence of a small applied magnetic field mainly through Raman pathways. Inelastic neutron scattering spectra exhibit distinct transitions corresponding to crystal field-induced tunneling gaps between the pseudo-doublet ground state components for 1-Tb and 1-Ho, which is one of the first direct experimental measurements with INS of such tunneling transitions in a molecular nanomagnet. The power of high-resolution INS is demonstrated with evidence of two distinct tunneling gaps measurable for the two crystallographically unique Tb coordination environments observed in the single crystal X-ray structure.

Understanding molecular and electrochemical charge transfer: theory and computations.

Electron, proton, and proton-coupled electron transfer (PCET) are crucial elementary processes in chemistry, electrochemistry, and biology. We provide here a gentle overview of retrospective and currently developing theoretical formalisms of chemical, electrochemical and biological molecular charge transfer processes, with examples of how to bridge electron, proton, and PCET theory with experimental data. We offer first a theoretical minimum of molecular electron, proton, and PCET processes in homogeneous solution and at electrochemical interfaces. We illustrate next the use of the theory both for simple electron transfer processes, and for processes that involve molecular reorganization beyond the simplest harmonic approximation, with dissociative electron transfer and inclusion of all charge transfer parameters. A core example is the electrochemical reduction of the S2O82- anion. This is followed by discussion of core elements of proton and PCET processes and the electrochemical dihydrogen evolution reaction on different metal, semiconductor, and semimetal (say graphene) electrode surfaces. Other further focus is on stochastic chemical rate theory, and how this concept can rationalize highly non-traditional behaviour of charge transfer processes in mixed solvents. As a second major area we address ("long-range") chemical and electrochemical electron transfer through molecular frameworks using notions of superexchange and hopping. Single-molecule and single-entity electrochemistry are based on electrochemical scanning probe microscopies. (In operando) scanning tunnelling microscopy (STM) and atomic force microscopy (AFM) are particularly emphasized, with theoretical notions and new molecular electrochemical phenomena in the confined tunnelling gap. Single-molecule surface structure and electron transfer dynamics are illustrated by self-assembled thiol molecular monolayers and by more complex redox target molecules. This discussion also extends single-molecule electrochemistry to bioelectrochemistry of complex redox metalloproteins and metalloenzymes. Our third major area involves computational overviews of molecular and electronic structure of the electrochemical interface, with new computational challenges. These relate to solvent dynamics in bulk and confined space (say carbon nanostructures), electrocatalysis, metallic and semiconductor nanoparticles, d-band metals, carbon nanostructures, spin catalysis and "spintronics", and "hot" electrons. Further perspectives relate to metal-organic frameworks, chiral surfaces, and spintronics.

Strong enhancement of Goos-Hänchen shift through the resonant optical tunneling effect.

The resonant optical tunneling effect (ROTE) originates from the frustrated total reflection effect because unique transmission characteristics are used to study high-sensitivity sensors. In this study, we theoretically demonstrated that choosing a suitable transmission gap made it possible for the ROTE structure based on hexagonal boron nitride and graphene to obtain a large Goos-Hänchen shift as high as tens of thousands of times the incident wavelength at a specific incident angle. The amplitude of the Goos-Hänchen shift was found to be sensitive to the central layer thickness but was also modulated by the tunneling gap on both sides. In addition, adjusting the chemical potential and relaxation time of the graphene sheets could alter the Goos-Hänchen shift. Our work provides a new way to explore the Goos-Hänchen effect and opens the possibility for the application of high-precision measurement technology based on the ROTE.

Preparation and characterization of conductive diamond for a scanning tunneling microscope tip

Owing to its extreme hardness, chemical stability and robustness, conductive diamond is an attractive material for scanning tunneling microscopy (STM). The selection of a suitable diamond and preparation of the STM tip is a challenge because electrically conductive diamonds can be grown using various methods and have anisotropic properties. A new method for the selection of conductive diamonds that is based on the registration and analysis of the tunneling I-V (TIV) characteristics of the tunnel junction between the diamond tip and graphite (0 0 0 1) surface at a constant tunneling gap is proposed. TIV should be monotonous while the tunneling currents vary from 0.1 to 6 nA with increasing bias voltages from 0.05 to 1 V. We found that HPHT diamonds grown in the Fe-Al-C-B growth system are more suitable for STM probs compared to grown in the Fe-Co-C-B system. • Tunnel current-voltage characteristics are a promising method for nanoscale study of the uniformity of impurity distribution in electrically conductive diamonds. • The Fe-Al-C-B growth system is more suitable for the growing HPHT diamonds for STM tips compared to the Fe-Co-C-B system.

STM/STS Study of the Density of States and Contrast Behavior at the Boundary between (7 × 7)N and (8 × 8) Structures in the SiN/Si(111) System

The origin of the contrast appearing in STM images at the boundary between diverse ordered structures is studied using the example of two structures, (7 × 7)N and (8 × 8), formed in the system of a two-dimensional silicon nitride layer on the Si(111) surface during ammonia nitridation. A significant dependence of the contrast between these structures on the voltage applied to the tunnel gap was found and studied both experimentally and theoretically. Variations in the contrast were quantitatively studied in the range from −3 V to +3 V, and they were studied in more detail for the positive biases on the sample from +1 V to +2.5 V, where the contrast was changed more than 2 times. Within the one-dimensional Wentzel–Kramers–Brillouin (WKB) model for the tunnel current, a comparatively simple procedure is proposed for the correction of the experimental STS-spectra of differential conductivity to identify the adequate (feasible) density of electron states (DOS). It is shown that the (8 × 8) structure DOS corresponds to a graphene-like layer of silicon nitride structure. The proposed correction procedure of the empirical differential conductivity spectra measured by STS will be useful for the quantitative determination of the DOS of new two-dimensional materials and surface structures.

An atomistic modeling framework for valence change memory cells

We present a framework dedicated to modeling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation and diffusion of oxygen vacancies in the central oxide under an external field, and an ab initio quantum transport method to calculate electrical current and conductance. As such, it reproduces a realistically stochastic device operation and its impact on the resulting conductance. We demonstrate this framework by simulating a switching cycle for a TiN/HfO2/TiN VCM cell, and see a clear current hysteresis between high/low resistance states, with a conductance ratio of one order of magnitude. Additionally, we observe that the changes in conductance originate from the creation and recombination of vacancies near the active electrode, effectively modulating a tunneling gap for the current. This framework can be used to further investigate the mechanisms behind resistive switching at an atomistic scale and optimize VCM material stacks and geometries.

Chaos-assisted many-body tunnelling.

We study the interplay of chaos and tunneling between two weakly coupled Bose-Josephson junctions. The classical phase space of the composite system has a mixed structure including quasi-integrable self-trapping islands for particles and excitations, separated by a chaotic sea. We show that the many-body dynamical tunneling gap between macroscopic Schrödinger cat states supported by these islands is chaos-enhanced. The many-body tunneling rate fluctuates over several orders of magnitude with small variations of the system parameters or the particle number.

Blocked electron transmission/reflection by coupled Rashba–Zeeman effects for forward and backward spin filtering

We present a theory for studying the quantum dynamics of both the transmission and reflection behavior of a two-dimensional electron gas across a planar potential step within a quantum well. In our model, we introduce the combined effect of the Rashba–Zeeman coupling on the conduction electrons. Our results demonstrate that as the energy of an incident or a transmitted electron stays within the Zeeman energy gap, both Klein reflection and Klein tunneling occur in this Rashba–Zeeman coupled electronic system, where the former corresponds to a backward spin filter while the latter to a forward spin filter. Meanwhile, our system also predicts a critical incident angle beyond which the electron tunneling will be fully suppressed. Such distinctive spin-filtering features are expected to give rise to a variety of applications in both spintronics and quantum-computation devices.

Delayed response to the photovoltaic performance in a double quantum dots photocell with spatially correlated fluctuation

A viable strategy for enhancing photovoltaic performance is to comprehend the underlying quantum physical regime of charge transfer in a double quantum dots (DQD) photocell. This work explored the photovoltaic performance dependent spatially correlated fluctuation in a DQD photocell. The effects of spatially correlated fluctuation on charge transfer and output photovoltaic efficiency were explored in a proposed DQD photocell model. The results revealed that the charge transport process and the time to peak photovoltaic efficiency were both significantly delayed by the spatially correlated fluctuation, while the anti-spatially correlated fluctuation reduced the output peak photovoltaic efficiency. Further results revealed that the delayed response could be suppressed by gap difference and tunneling coefficient within two dots. Subsequent investigation demonstrated that the delayed response was caused by the spatial correlation fluctuation slowing the generative process of noise-induced coherence, which had previously been proven to improve the quantum photovoltaic performance in quantum photocells. And the reduced photovoltaic properties were verified by the damaged noise-induced coherence owing to the anti-spatial correlation fluctuation and a hotter thermal ambient environment. The discovery of delayed response generated by the spatially correlated fluctuations will deepen the understanding of quantum features of electron transfer, as well as promises to take our understanding even further concerning quantum techniques for high efficiency DQD solar cells.

A straightforward optical alignment protocol for STM-based single molecule spectroscopy

A light-accessed scanning tunneling microscope (STM) is a powerful spectroscopic tool that enables chemical analysis at the single molecular level, but it requires highly precise optical alignments to pinpoint the nano-scale tunneling gap, leaving experimental challenges. Here we present straightforward procedures to align the optical setup for STM-luminescence and STM-based tip-enhanced Raman spectroscopy (TERS) performed with a reflection geometry in an ultrahigh vacuum chamber. Observing real-space images of the metal tip apex through a spectrograph set to the zeroth-order diffraction enables “in situ” optimization of the detection path and introduction of the excitation light of TERS to the nanogap. The best spatial overlap with the nanogap can be achieved by monitoring plasmon-enhanced, low-frequency inelastic scattering of the metal. This protocol allows us to overcome such difficulties in STM-based spectroscopy and facilitates physicochemical study of single adsorbates on nontransparent substrates.

(Digital Presentation) High-Resolution Imaging of Active Sites Under Reaction Conditions for Carbon-Based Electrocatalysis

Due to the abundance and the electrochemical versatility of carbon, it is becoming an increasingly popular material for electrocatalytic applications. Whether it is used as a support material, as a catalyst, or even as a bifunctional catalyst, insights into the reaction processes are of fundamental value. In this light, we employ electrochemical scanning tunneling microscopy (EC-STM) to in-situ evaluate electrode surfaces' behavior and identify the nature of the active sites.[1] The experimental distinction between inactive and active sites of a catalytic system can be achieved by comparing the noise level of surface sites in the EC-STM signal while a reaction is ‘Off’ or ‘On’, respectively. The tunneling current will be stable under both conditions if the scanning tip is positioned over an inactive site. Over an active site, reactions occurring within the tunneling gap will influence the EC-STM signal, which can be observed as locally confined noise features superimposed on the surface morphology.Here, we examine highly ordered pyrolytic graphite (HOPG) in alkaline and acidic media as a model system for carbon-based structures. In an alkaline medium, we compare the activity of specific surface sites under oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) conditions (Figure 1a).[2] In both cases, predominantly steps and defects are active. However, in the case of the OER, the terraces also play a role. For the hydrogen evolution reaction (HER) in acidic media, it was possible to identify individual active sites on the ‘honeycomb’ structured surface with down to atomic resolution (Figure 1b).[3] Apart from HOPG, the technique will be demonstrated for metal-organic frameworks, another class of promising catalysts for ORR and OER.

Statistical signature of electrobreakdown in graphene nanojunctions

Controlled electrobreakdown of graphene is important for the fabrication of stable nanometer-size tunnel gaps, large-scale graphene quantum dots, and nanoscale resistive switches, etc. However, owing to the complex thermal, electronic, and electrochemical processes at the nanoscale that dictate the rupture of graphene, it is difficult to generate conclusions from individual devices. We describe here a way to explore the statistical signature of the graphene electrobreakdown process. Such analysis tells us that feedback-controlled electrobreakdown of graphene in the air first shows signs of joule heating-induced cleaning followed by rupturing of the graphene lattice that is manifested by the lowering of its conductance. We show that when the conductance of the graphene becomes smaller than around 0.1 G0, the effective graphene notch width starts to decrease exponentially slower with time. Further, we show how this signature gets modified as we change the environment and or the substrate. Using statistical analysis, we show that the electrobreakdown under a high vacuum could lead to substrate modification and resistive-switching behavior, without the application of any electroforming voltage. This is attributed to the formation of a semiconducting filament that makes a Schottky barrier with the graphene. We also provide here the statistically extracted Schottky barrier threshold voltages for various substrate studies. Such analysis not only gives a better understanding of the electrobreakdown of graphene but also can serve as a tool in the future for single-molecule diagnostics.

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

The study of charge carrier transport at nanoscale electrical contacts is crucial for the development of next-generation electronics. This paper reviews recent modeling efforts on quantum tunneling, current crowding, and contact resistance across electrical interfaces with nanometer scale dimensions. A generalized self-consistent model for quantum tunneling induced electron transport in metal–insulator–metal (MIM) junctions is summarized. Rectification of a dissimilar MIM junction is reviewed. A modified two-dimensional (2D) transmission line model is used to investigate the effects of spatially varying specific contact resistivity along the contact length. The model is applied to various types of electrical contacts, including ohmic contacts, MIM junction based tunneling contacts, and 2D-material-based Schottky contacts. Roughness engineering is recently proposed to offer a possible paradigm for reducing the contact resistance of 2D-material-based electrical contacts. Contact interface engineering, which can mitigate current crowding near electrical contacts by spatially designing the interface layer thickness or properties, without requiring an additional material or component, is briefly reviewed. Tunneling engineering is suggested to eliminate severe current crowding in highly conductive ohmic contacts by introducing a thin tunneling layer or gap between the contact members. Unsolved problems and challenges are also discussed.

Manipulation and readout of spin states of a single-molecule magnet by a spin-polarized current

Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the SMM's two spin-state of stored information that characterized by the maximum and minimum average value of the $Z$-component of the total spin of the SMM and the conduction-electron, which are recognized as the information bits "$1$" and "$0$". We demonstrate that the switching time depends on both the sequential tunneling gap $\varepsilon_{se}$ and the spin-selection-rule allowed transition-energy $\varepsilon_{trans}$, which can be tuned by the gate voltage. In particular, when the external bias voltage is turned off, in the cases of the unoccupied and doubly-occupied ground eigenstates, the time derivative of the transport current can be used to read out the SMM's two spin-state of stored information. Moreover, the tunneling strength of and the asymmetry of the SMM-electrode coupling have a strong influence on the switching time, but that have a slight influence on the readout time that being on the order of nanoseconds. Our results suggest a SMM-based memory device, and provide fundamental insight into the electrical controllable manipulation and readout of the SMM's two spin-state of stored information.

Mesenchymal stem cells (MSCs) in Leber's hereditary optic neuropathy (LHON): a potential therapeutic approach for future.

Optic neuropathy has become a new typical syndromic multi-system disease that leads to optic atrophy. This review discusses potential treatments and advances of Leber's hereditary optic neuropathy (LHON), a sporadic genetic disorder. LHON is caused due to slight mutations in mitochondria leading to mitochondrial dysfunction, causing vision loss. There are no current significant treatments that have been proven to work for LHON. However, extensive review was carried out on capable studies that have shown potential treatment sensory systems and are being evaluated currently. Some of these studies are in clinical trials, whereas other ones are still being planned. Here, we focus more on treatment based on mesenchymal stem cells-mediated mitochondrial transfer via various techniques. We discuss different mitochondrial transfer modes and possible ways to understand the mitochondria transfer technique's phenotypic characteristics. It is clearly understood that transfer of healthy mitochondria from MSC to target cell would regulate the range of reactive oxygen species and ATP'S, which are majorly responsible for mutation upon irregulating. Therefore, mitochondrial transfer is suggested and discussed in this review with various aspects. The graphical abstract represents different means of mitochondrial transport like (a) Tunnelling nanotubules, (b) Extracellular vesicles, (c) Cell fusion and (d) Gap junctions. In (a) Tunnelling nanotubules, the signalling pathways TNF- α/TNF αip2 and NFkB/TNF αep2 are responsible for forming tunnels. Also, Miro protein acts as cargo for the transport of mitochondria with myosin's help in the presence of RhoGTPases [35]. In (b) Extracellular vesicles, the RhoA ARF6 contributes to Actin/Cytoskeletal rearrangement leading to the shedding of microvesicles. Coming to (c) Cell fusion when there is a high amount of ATP, the cells tend to fuse when in close proximity leading to the transfer of mitochondria via EFF-1/HAP2 [48]. In (d) Gap Junctions, Connexin43 is responsible for the intracellular channel in the presence of more ATP [86].

Memristor compact model with oxygen vacancy concentrations as state variables

We present a unique compact model for oxide memristors based upon the concentration of oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen vacancy concentration is similar in effect to the reduction (expansion) of the tunnel gap used as a state variable in existing compact models, providing a mechanism for the electronic current to increase (decrease) based upon the polarity of the applied voltage. Rate equations defining the dynamics of state variables are obtained from simplifications of a recent paper in which electronic processes (i.e., electron capture/emission) were combined with atomic processes (i.e., Frenkel-pair generation/recombination, diffusion) stemming from the thermochemical model of dielectric breakdown. Central to the proposed model is the effect of the electron occupancy of oxygen vacancy traps on resistive switching dynamics. The electronic current is calculated considering Ohmic, band-to-band, and bound-to-band contributions. The model includes uniform self-heating with Joule heating and conductive loss terms. The model is calibrated using experimental current–voltage characteristics for HfO2 memristors with different electrode materials. Though a general model is presented, a delta-shaped density of states profile for oxygen vacancies is found capable of accurately representing experimental data while providing a minimal description of bound-to-band transitions. The model is implemented in Verilog-A and tested using read/write operations in a 4×4 1T1R nonvolatile memory array to evaluate its ability to perform circuit simulations of practical interest. A particular benefit is that the model does not make strong assumptions regarding filament geometry of which scant experimental-evidence exists to support.

A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction

In this letter, a tunneling field effect transistor based on quasi-broken gap energy band alignment (QB-TFET) is proposed and investigated by simulation method. To offering high on-state current, InGaAs/GaAsSb heterojunction with quasi-broken gap energy band alignment is applied to QB-TFET to improve the band-to-band tunneling rate. Trench gate structure and InGaAs pocket layer are applied to further increase the tunneling efficiency. To suppress the leakage current caused by the off-state tunneling path from source to drain, an intrinsic InGaAs spacer is inserted between n+ InGaAs drain and p+ GaAsSb source. In order to further improve the control ability of gate voltage on channel, TiO2 is used as the gate dielectric of the proposed QB-TFET. Moreover, the effect of x and y fraction of In x Ga1–x As and GaAs y Sb1–y on quasi-broken gap tunneling junction are studied in this work. The electrical characteristic change of QB-TFET with different x and y fraction is analyzed. The proposed QB-TFET is compared with other works and shows an obvious advantage on performance. As a result, a large on-state current (I on) of 921 μA μm−1 can be obtained. Moreover, steep average subthreshold swing (SSavg) of 4.9 mV/dec can be achieved when I on = 1 μA μm−1.