Tungsten-doped Indium Oxide Research Articles

Understanding thickness-dependent stability of tungsten-doped indium oxide transistors

In this study, the influence of the thickness of the channel layer on the electrical properties and stability of tungsten-doped indium oxide (IWO) thin-film transistors (TFTs) was investigated. Although oxide-semiconductor TFTs, particularly indium gallium zinc oxide, are promising, problems related to oxygen vacancies have led to their instability. In contrast, IWO has proven to be a compelling alternative because of its robust resistance to oxygen vacancies. IWO TFTs with varying channel thicknesses (10, 20, and 30 nm) were fabricated, and the device parameters, such as threshold voltage (Vth), subthreshold swing (SS), field-effect mobility (μFE), and on/off current ratio (Ion/Ioff), were analyzed. It was found that as the channel thickness increased, Vth exhibited a negative shift and SS increased, indicating an increase in carrier concentration. This phenomenon is attributed to the bulk trap density, in particular to oxygen vacancies. Negative bias stress tests confirmed the influence of the oxygen vacancies, with thicker channels showing more pronounced shifts. Low-frequency noise measurements were consistent with the carrier number fluctuation model, indicating that defects within the channel region contribute to the observed noise. The study concludes that identifying an optimal channel thickness during device manufacturing is crucial for improved TFT performance, with 20 nm devices characterized by high μFE and comparable trap density to 10 nm. This study provides valuable insight into the nuanced relationship between the channel thickness, trap density, and electrical performance of IWO TFTs.

Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector

Fabrication and Properties of Tungsten-doped Indium Oxide Ultraviolet Photodetector

Effect of sputtering pressure on the properties of large area IWO thin films deposited by direct current magnetron sputtering

Tungsten doped indium oxide (In2O3: W, IWO) thin films have been attracting increasing attention due to their excellent optoelectronic properties. Here, a series of IWO thin films were prepared using direct current (DC) magnetron sputtering method, by varying the sputtering pressure. Analysis revealed that the IWO films prepared under sputtering pressure of 0.4 Pa exhibited excellent optoelectronic performance, with low square resistance, resistivity, high carrier concentration and mobility. The resulting semi-transparent perovskite solar cells (ST-PSCs), with IWO fabricated under 0.4 Pa, yield a PCE of 15.71 % for the large area modules of 100 cm2 (active area 64.8 cm2).

Reliability of transparent conductive oxide in ambient acid and implications for silicon solar cells

Transparent conductive oxide (TCO) films, known for their role as carrier transport layers in solar cells, can be adversely affected by hydrolysis products from encapsulants. In this study, we explored the morphology, optical-electrical properties, and deterioration mechanisms of In2O3-based TCO films under acetic acid stress. A reduction in film thickness and carrier concentration due to acid-induced corrosion was observed. X-ray photoelectron spectroscopy and inductively coupled plasma emission spectrometry analyses revealed that TCOs doped with less-reactive metals exhibited enhanced corrosion resistance. The efficiency of silicon heterojunction (SHJ) solar cells with tin-doped indium oxide, titanium-doped indium oxide, and zinc-doped indium oxide films decreased by 10%, 26%, and 100%, respectively, after 200 ​h of corrosion. We also found that tungsten-doped indium oxide could effectively safeguard SHJ solar cells against acetic acid corrosion, which offers a potential option for achieving long-term stability and lower levelized cost of solar cell systems. This research provides essential insights into selecting TCO films for solar cells and highlights the implications of ethylene-vinyl acetate hydrolysis for photovoltaic modules.

(Invited) Interface Treatments for High-Efficiency MoOx Based Silicon Heterojunction Solar Cells

Silicon based solar cells dominate the market of photovoltaics, which hold the highest potential for green electricity production. A front/back-contacted architecture combined with the silicon-based heterojunction (SHJ) concept realized a world record efficiency of 26.3%1. However, conventional silicon-based doped layers, which work as carrier selective transport layers, are not optically transparent.Transition metal oxides are promising candidates for SHJ solar cells due to their advantageous opto-electronic properties. Molybdenum oxide (MoOx) with high work function (WF) has achieved highly efficient solar cells with 23.5% efficiency2. However, depositing high quality MoOx thin film on top of a-Si:H is challenging due to highly reactive surfaces3. This interaction may result in interfacial oxidation, lower Mo oxidation states and reduced WF4,5. In turn, electrical performances of solar cells featuring MoOx are poorer3 than standard SHJ devices.Several attempts have been made to prevent the reaction between MoOx and (i)a-Si:H. Pre-annealing4 of a-Si:Hand pre-growth of SiOx layer6 have been proposed as effective ways to prevent the degradation of MoOx. Nevertheless, those approaches require extra process steps that make MoOx integration not immediately viable in industrial environment. In our previous work, we proposed a plasma treatment (PT) at MoOx/(i)a-Si:H interface that demonstrated to mitigate dipole effect and resulted in improved cell performance7. After optimizing the interface treatment, even thinner MoOx layer could be applied.The solar cells were fabricated using 260±20 μm 4-inch double-side textured n-type <100> FZ wafers. (i)a-Si:H was deposited by plasma-enhanced chemical vapor deposition on both sides, while (n)a-Si:H only at the rear side. We carried out two different plasma treatments on the (i)a-Si:H interface prior MoOx deposition: one called PT from a mixture of SiH4, H2 and CO2 and another called PTB from a mixture of SiH4, H2, CO2 and B2H6. One sample without plasma treatment (noPT) was used as reference to evaluate the efficacy of the proposed method. A thickness series from 1 to 4 nm of MoOx was thermally evaporated from MoO3 powder at the pressure of 5×10-6 mbar. After that, optimized 50-nm and 150-nm thick tungsten-doped indium oxide (IWO) layers were sputtered through a hard mask at front and rear side, respectively, defining six 2×2 cm2 solar cells per wafer. As metal contact at the front side, we used room temperature Cu plating8 with a metal coverage fraction of 1.575%; at the rear side, 500-nm thick Ag layer was sputtered on the full device area.We studied the impact of different plasma treatment conditions on MoOx film quality and cells’ performance. MoOx film quality was assessed based on O vacancies inside the film4. The samples with interface treatments contain less O vacancies than the sample without treatment. It is noticeable that the cell precursors endowed with PTB yield higher fill factor (FF) than other types of precursors. Instead, PT and noPT samples benefitted from high short-circuit current density (J SC). Ultimately, PTB and PT samples achieved similar conversion efficiency. For the variation of MoOx thickness, we observed that even a slightly change in its thickness influences the solar cells’ electrical performance drastically. An ultra-thin, ~1.7-nm thick MoOx layer could provide sufficient field passivation (open circuit voltage, V OC = 721.4 mV) and good opto-electrical properties (FF = 82.18% and J SC-illuminated-area = 40.20 mA/cm2). With our approach we demonstrate word record cell with ISFH-certified conversion efficiency of 23.83% 9. 1 LONGi Solar 2021. 2 J. Dréon, et al., Nano Energy, 2020. 3 J. Geissbühler et al., Appl. Phys. Lett. 2015. 4 M.T. Greiner, et al., Adv. Funct. Mater. 2013. 5 M.T. Greiner, et al., Adv. Funct. Mater. 2012. 6 J. Tong, et al. ACS Appl. Mater. Interfaces. 2021. 7 L. Mazzarella, et al., Prog Photovolt Res Appl. 2020. 8 C. Han, et al., Solar RRL 2022. 9 L. Cao, et al., Prog. Photovolt. 2022.

Tungsten doped indium oxide (IWO) transparent electrode used in air-annealed perovskite solar cells

The common transparent electrode materials used in perovskite solar cells (PSCs), for example, the tin-doped indium oxide (ITO), usually have low carrier mobility and low transmittance in the near-infrared region which limits the short circuit current density (JSC). Accordingly, it is urgent to seek a novel transparent conductive material with high mobility and high transmittance. In this work, the tungsten doped indium oxide (IWO) film, composed of 0.5 wt% WO3 and 99.5 wt% In2O3, is employed in PSCs to act as the transparent electrode. The IWO-based PSCs exhibit superior performance as compared with the ITO-based counterparts mainly due to the excellent opto-electrical properties of IWO, such as high carrier mobility and infrared transmittance, fine surface morphology, etc. The performance of devices is further optimized by air-annealing treatment of the absorber layer. Air-annealing improves the crystallinity, decreases the defect states, and as a result, inhibits the non-radiative recombination. In summary, we fabricated the champion device based on IWO with the JSC of 26.2 mA/cm2 and its power conversion efficiency achieves 23.64%, the maximum record of IWO-based PSCs.

Temporal Frame Filtering for Autonomous Driving Using 3D-Stacked Global Shutter CIS With IWO Buffer Memory and Near-Pixel Compute

With the advancement of deep learning to solve autonomous driving problems, the computation and memory requirements have been growing rapidly. Near-pixel compute-based CMOS image sensors (CIS) have been investigated as a potential candidate to perform the initial computations of workloads close to the pixel and reduce data movement. In this work, we design a near-pixel compute CIS capable of implementing a temporal frame filtering network, which rejects redundant image frames targeting autonomous driving applications. To improve performance and avoid image distortion, 3D-stacked global shutter CIS is proposed. This architecture integrates photodiodes with memory and compute units using Cu-Cu hybrid bonding. We propose to use back-end-of-line (BEOL) compatible Tungsten-doped Indium Oxide Transistors (IWO FETs) based embedded DRAM as buffer memory to achieve refresh-free storage and high bandwidth connections between various components. Near-pixel compute circuit is optimized by including sparsity-aware adder tree and using NOR gates as data buffers. The two-tier system comprises photodiodes on tier-1 in 40 nm node, and near-pixel compute and buffer memory on tier-2 in 22 nm node. We perform simulations in Cadence, obtaining an energy efficiency of 65 TOPS/W and a compute density of 1.04 TOPS/mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^2$</tex-math> </inline-formula> for 8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 8b MAC, with a total latency of 1.15 ms/frame.

Highly crystallized tungsten doped indium oxide film stabilizes silicon heterojunction solar cells in sodium environment

High-efficient silicon heterojunction (SHJ) solar cells are ideal bifacial devices. In this application context, Na + ions induced degradations from encapsulation soda-lime glass are of significance. We conducted accelerated Na + ions aging experiments at 85 °C, 85% relative humidity without encapsulation to simulate damp heat test in soda-lime glass for SHJ solar cells. It is found that Na + ions accelerated the formation of metal In and In(OH) 3 or InOOH in damp heat condition, which destroyed the capping metal oxide, i.e., tungsten doped indium oxide (IWO). Interestingly, it demonstrates that the device stability is highly dependent on the crystallinity of IWO films. IWO films with large grains are more resistive to Na + ions erosion, and consequently, account for the enhanced device stability of SHJ solar cells. We believe this work provides a guide for designing more reliable bifacial SHJ solar cells installed in hot climates and coastal areas. • Accelerated Na + ions aging experiments are performed to simulate damp heat test in soda lime glass for SHJ solar cells. • Na + ions diffuse to a-Si:H layers via the grain boundaries of IWO. • Highly crystallized IWO films are more likely to resist the diffusion and erosion of Na + ions. • This work provides a guide for designing more reliable bifacial SHJ solar cells installed in hot climates.

High carrier mobility tungsten-doped indium oxide films prepared by reactive plasma deposition in pure argon and post annealing

Tungsten-doped indium oxide films were deposited by reactive plasma deposition using a low doped target in pure argon atmosphere at room temperature. Post thermal annealing was conducted in different atmospheres in the range of 150 °C–250 °C to improve the properties of films. The structural, electrical and optical properties of IWO films with different annealing conditions have been investigated. It is found that crystallization after annealing is an effective way to improve the mobility. The mobility of the polycrystalline films is much greater than amorphous films. And the ordered structure is conducive to interstitial oxygen and oxygen in the atmosphere to fill the oxygen vacancies, leading to the decrease of the carrier concentration and a further increase of the mobility. We have prepared IWO thin films with the carrier mobility (up to 83 cm2V−1s−1), even if as-deposited films had a relatively low carrier mobility (∼30 cm2V−1s−1). The optical transmittance of IWO films maintains 89% and 84% in visible and near-infrared regions, respectively. The mobility of IWO films is found to depend on the manufacture of the source target and the highest mobility of 120 cm2V−1s−1 has been reached.

Switching Properties Improvement of Tungsten-Doped Indium Oxide Phototransistor

High-performance and transparent tungsten-doped indium oxide (InWO) thin-film transistors (TFTs) with aluminum or indium oxide (In2O3) source and drain (S/D) electrodes were fabricated using the radiofrequency (RF) co-sputtering method. Due to the lower electron barrier height of the In2O3/InWO interface, the device with a homojunction structure exhibited better performance (μ eff = 20.1 cm2 V−1 ·s−1 and S.S. = 0.17 V dec−1) than the one with a heterojunction structure. Moreover, due to the high transparency of the S/D electrode, the light-sensing area was magnified. Thus, the responsivity of the phototransistor was significantly improved from 23.68 A W−1 to 89.47 A W−1. This result improved the properties of the interface between the S/D electrode and the channel layer and simplified the manufacturing process for InWO TFTs.

Room-temperature sputtered tungsten-doped indium oxide for improved current in silicon heterojunction solar cells

The window layers limit the performance of silicon heterojunction (SHJ) solar cells with front and back contacts. Here, we optimized tungsten-doped indium oxide (IWO) film deposited by radio frequency magnetron sputtering at room temperature. The opto-electrical properties of the IWO were manipulated when deposited on top of thin-film silicon layers. The optimal IWO on glass shows carrier density and mobility of 2.1 × 1020 cm−3 and 34 cm2 V−1s−1, respectively, which were tuned to 2.0 × 1020 cm−3 and 47 cm2 V−1s−1, as well as 1.9 × 1020 cm−3 and 42 cm2 V−1s−1, after treated on i/n/glass and i/p/glass substrates, respectively. Using the more realistic TCO data that were obtained on thin-film silicon stacks, optical simulation indicates a promising visible-to-near-infrared optical response in IWO-based SHJ device structure, which was demonstrated in fabricated devices. Additionally, by adding an additional magnesium fluoride layer on device, the champion IWO-based SHJ device showed an active area cell efficiency of 22.92%, which is an absolute 0.98% efficiency gain compared to the ITO counterpart, mainly due to its current gain of 1.48 mA/cm2.

Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology

The effects of radiation on tungsten doped indium oxide (IWO) thin-film transistors (TFTs) have been well investigated in this Letter. In order to achieve high stability and excellent electrical performance simultaneously even in high ionizing radiation damage ambient, different concentrations of tungsten dopant have been introduced for the TFT device fabrication. It is interesting that the high energy ionizing radiation may significantly increase the conductivity and influence the total concentration of oxygen vacancy in the transparent amorphous oxide semiconductor material, which may be completely different from the traditional radiation damage effect for silicon based CMOS devices. However, that abnormal phenomenon will be effectively suppressed by the powerful carrier suppressor, tungsten, which may have a high oxygen bond dissociation energy. Therefore, IWO devices with a 4% tungsten oxide dopant might be the optimized result even after high dosage ionizing radiation exposure. Hence, it may provide a promising radiation hardness approach to improve both the electrical characteristics and reliability for next generation displays, which can be used in the control system of nuclear power generation or space technology.

Effect of crystalline structure on optical and electrical properties of IWOH films fabricated by low-damage reactive plasma deposition at room temperature

Tungsten and water co-doped indium oxide (IWOH) films were deposited via a low-damage reactive plasma deposition method at room temperature followed by air atmosphere annealing. The structural, electrical, and optical properties of IWOH films with different water flow rates (F H2O ) were systematically investigated before and after annealing. Despite the lower mobility (43.7 cm 2 /V) of IWOH films with high water flow rate (H-F H2O , F H2O ≥ 1.5 sccm) in the as-deposited state, it has increased to 65.2 cm 2 /V, which surpassed IWOH films with low water flow rate (L-F H2O , F H2O < 1.5 sccm) after annealing. Meanwhile, a significant increase in average optical transmittance from 80.9% to 88.8% and from 92.2% to 95.2% in the short wavelength of visible (350–500 nm) and near-infrared region (800–2500 nm), respectively, was obtained for H-F H2O films after annealing. The variation of the optical and electrical properties for IWOH films with different F H2O was attributed to the crystalline structure with a larger crystallite size and lower density of grain boundary. X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy analysis revealed that high water flow rate impeded crystallization of IWOH films during reactive plasma deposition, leading to an amorphous structure in the as-deposited state. After annealing, however, the H-F H2O films crystallized and exhibited larger grains than both tungsten-doped indium oxide (IWO) and L-F H2O films. The modified crystalline properties of IWOH films with larger grains hence reducing grain-boundary scattering, which was realized by H-F H2O and annealing treatment, gave rise to enhanced electrical properties without deteriorating optical properties. • Hydrogen-doped indium tungsten oxide was fabricated by reactive plasma deposition at room temperature. • Structural, optical and electrical properties were studied as a function of water flow rate. • Proper water flow rate can enhance the crystalline quality with fewer grain boundary scattering. • The modified crystalline properties with reduced grain boundary led to enhanced mobility.

W-doped indium oxide synthetized via hydrothermal route for low-temperature ozone sensing

Nano-crystalline indium oxide and tungsten-doped indium oxide were prepared by hydrothermal route and adopted as ozone sensitive materials at low temperature, comparing their performances with a commercial indium oxide. After hydrothermal synthesis, powders were calcined at 400 °C for 30 min and characterized by laser granulometry, thermal analysis, X-ray diffraction, N2 adsorption, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, and transmission electron microscopy. Sensors were developed by screen-printing the sensing materials onto α-alumina substrates with platinum interdigitated electrodes. After drying overnight, sensors were fired at 600 °C for 1 h in air.The sensor response was measured in the range 25 °C–200 °C carrying on all measurements in a flow chamber at a constant flow rate of 1 L/min of dry air in the range 200–500 ppb O3. Response time and recovery time (e.g., the times taken for the sensor to attain 90% of total impedance change from its initial impedance value) were detected, together with cross-sensitivity tests towards NH3, CH4, humidity, CO, NO2, CO2 and N2O.Sensor's response (R) was defined as the ratio between impedance of the film under gas exposure at the equilibrium and the impedance under dry air. Best results were obtained at 100 °C, with R equal to 464 under 500 ppb O3. These results are extremely encouraging and support the exploitation of tungsten-doped indium oxide as low-temperature ozone sensors.

In-situ formation of indium seed layer for copper metallization of silicon heterojunction solar cells

Low production cost and simplified process are the prerequisites for large-scale commercialization of highly efficient silicon heterojunction (SHJ) solar cells. In this paper, an innovative method of plating process with in-situ seed layer technique is proposed for the metallization of SHJ solar cells. As indicated by the measurements of cyclic voltammetry curves and scanning electron microscopy, electrochemical reduction reaction occurs and results in metal particles randomly distributed on the surface of tungsten doped indium oxide (IWO) layer. Given the measurement of Energy-dispersive X-ray spectroscopy elemental mapping and X-ray photoelectron spectroscopy, the metal particles are indium and are electrochemically reduced from the IWO film. These indium particles can serve as the seed layer facilitating the subsequent copper plating process. In order to prevent copper diffusion and enhance the adhesion, nickel plating and alkaline copper plating was applied. As a result, the maximum peeling force of plated copper busbar reaches 4.23 N. This is higher than that of the screen-printed silver busbar (2.31 N). By adopting the in-situ indium-seed-layer based plating process, a cell efficiency of 22.01% was achieved with significantly improved short circuit current density and fill factor. Taking advantage of the in-situ seed layer technique, the all-solution based plating process is simplified and effective without full area seed layer deposition and subsequent etch back step, showing great potential for the copper metallization of SHJ solar cells with reduced cost.

Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems.

In this study, hydrogen peroxide (H2O2) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO2), is employed to passivate excessive oxygen vacancies of the high-mobility tungsten-doped indium oxide without any essential thermal process. With the detailed material analysis, the internal physical mechanism of the cosolvent effect or the interaction between the cosolvent solution and supercritical-phase fluid is well discussed. In addition, the optimized result has been applied for the thin film transistor device fabrication. As a result, the device with SCCO2 + H2O2 treatment exhibits the lowest subthreshold swing of 82 mV/dec, the lowest interface trap density of 8.76 × 1011 eV-1 cm-2, the lowest hysteresis of 47 mV, and an excellent reliability and uniformity characteristic compared with any other control groups. Besides, an extremely high field-effect mobility of 98.91 cm2/V s can also be observed, while there is even a desirable positive shift for the threshold voltage. Notably, compared with the untreated sample, the highest on/off current ratio of 5.11 × 107 can be achieved with at least four orders of magnitude enhancement by this unique treatment.

Dual‐Function Light‐Trapping: Selective Plating Mask of SiOx/SiNx Stacks for Silicon Heterojunction Solar Cells

Reducing the production cost of highly efficient silicon heterojunction (SHJ) solar cells is essential for their large‐scale commercialization. Replacing screen printed silver contacts with plated copper is an effective way. However, one needs to deal with the process compatibility without sacrificing the cell performance. In this work, a layer stack of silicon oxide and silicon nitride (SiOx/SiNx) is proposed, serving dual functions of light‐trapping and selective copper plating mask. The SiOx/SiNx stack is prepared by plasma enhanced chemical vapor deposition (PECVD) on a tungsten doped indium oxide (IWO) layer. Optimized SiOx/SiNx/IWO stacks in SHJ solar cells with silver contacts result in excellent anti‐reflection properties and improved external quantum efficiency. A short circuit current density gain of 1.16 mA cm−2 is achieved without the loss in fill factor. This SiOx/SiNx stack is tested as in‐situ deposited selective plating mask for a front‐side copper plating process. An in‐house made light induced plating tool is utilized. A screen printed silver finger is applied as a seed layer for copper plating. The bulk resistivity of Cu/Ag finger reduces to 4.1 E‐6 Ω · cm, which is lower than that of low temperature silver paste (around 6 E‐6 Ω · cm) before copper is plated on it. The dual functions of SiOx/SiNx stack and the process are proven, indicating a good potential for further improving photoelectric properties of SHJ solar cells after well optimization.

Patterning and formation of copper electroplated contact for bifacial silicon hetero-junction solar cell

In this work, tungsten doped indium oxide (IWO) film was deposited as anti-reflection coating and conductive layer for silicon hetero-junction (SHJ) solar cell, which meant the necessity to mask the pattern of grid electrodes for selective plating. We investigated the plating process and compared three different masking resists suitable for large area SHJ solar cells. The results revealed that light-sensitive dry film was appropriate as plating resist due to its simple process, high resolution and rectangular shape. As a proof of concept, copper plated SHJ solar cell with an efficiency of 22% was fabricated in SIMIT’s R&D line. Compared with screen printed finger, copper plated finger showed narrow width, higher aspect ratio and lower bulk resistivity, leading to decreased shading loss without increasing girds power loss. The metallization refinement contributed 2.80% of power loss reduction, which indicated the possibility to achieve higher efficiency by copper metallization after well optimization.

The optoelectronic properties of tungsten-doped indium oxide thin films prepared by polymer-assisted solution processing for use in organic solar cells

Tungsten-doped indium oxide transparent conducting thin films, to be applied to inverted organic solar cells, were prepared by a polymer-assisted solution process.

Atomic oxygen irradiation resistance of transparent conductive oxide thin films

One set of tungsten-doped indium oxide thin films (In2O3:W, IWO) and another set of tin-doped indium oxide thin films (In2O3:Sn, ITO) were prepared on glass substrates by radio frequency (RF) reactive magnetron sputtering method. The as-deposited IWO and ITO films have resistivity values at a level of 10−4Ω•cm. Average transmittance values of these films are above 85% in visible-light region as well as in near-infrared region. All these films were irradiated by atomic oxygen (AO) with different amount of flux in a ground-based simulation system close to the environment of low Earth orbit. Changes in characteristics including surface morphology, mechanical properties, optical and electrical properties were compared between IWO and ITO films after AO irradiation. The effects of AO irradiation on transparent conductive oxide thin films were analyzed. As a result, AO has influences on ITO and IWO thin films through the way of oxidation and erosion. Both ITO and IWO films possess suitable anti-AO properties. IWO films are more appropriate as AO protective coatings due to their compact microstructure, the coexistence of W4+ and W6+ ions in their chemical systems, and incremental WO3 protective layer under AO oxidation.