Abstract
High-performance and transparent tungsten-doped indium oxide (InWO) thin-film transistors (TFTs) with aluminum or indium oxide (In2O3) source and drain (S/D) electrodes were fabricated using the radiofrequency (RF) co-sputtering method. Due to the lower electron barrier height of the In2O3/InWO interface, the device with a homojunction structure exhibited better performance (μ eff = 20.1 cm2 V−1 ·s−1 and S.S. = 0.17 V dec−1) than the one with a heterojunction structure. Moreover, due to the high transparency of the S/D electrode, the light-sensing area was magnified. Thus, the responsivity of the phototransistor was significantly improved from 23.68 A W−1 to 89.47 A W−1. This result improved the properties of the interface between the S/D electrode and the channel layer and simplified the manufacturing process for InWO TFTs.
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