Tunable Spectral Response Research Articles

Recent Advances in Organic Photodetectors

Organic photodetectors (OPDs) have garnered significant attention in fields such as image sensing, health monitoring, and wearable devices due to their exceptional performance. This review summarizes recent research advancements in materials, structures, performance, and applications of narrowband organic photodetectors, hybrid organic–inorganic perovskite photodetectors, flexible organic photodetectors (FOPDs), and photomultiplication type organic photodetectors (PM-OPDs). Organic semiconductors offer substantial potential in optoelectronic devices owing to their low cost, ease of processing, and tunable spectral response. Hybrid perovskite materials extend the spectral response range, FOPDs meet the demands of wearable devices, and PM-OPDs enhance sensitivity, allowing for the detection of weak light signals. Through innovations in materials, structural optimization, and improvements in manufacturing processes, the performance of OPDs has seen significant enhancement. This article also explores the application prospects of these technologies in medical monitoring, optical communications, and image sensing.

A microsized optical spectrometer based on an organic photodetector with an electrically tunable spectral response

A microsized optical spectrometer based on an organic photodetector with an electrically tunable spectral response

Dual-Band Photomultiplication-Type Organic Photodetectors with Ultrahigh Signal-to-Noise Ratios.

A series of dual-band photomultiplication (PM)-type organic photodetectors (OPDs) were fabricated by employing a donor(s)/acceptor (100:1, wt/wt) mixed layer and an ultrathin Y6 layer as the active layers, as well as by using PNDIT-F3N as an interfacial layer near the indium tin oxide (ITO) electrode. The dual-band PM-type OPDs exhibit the response range of 330-650 nm under forward bias and the response range of 650-850 nm under reverse bias. The tunable spectral response range of dual-band PM-type OPDs under forward or reverse bias can be explained well from the trapped electron distribution near the electrodes. The dark current density (JD) of the dual-band PM-type OPDs can be efficiently suppressed by employing PNDIT-F3N as the anode interfacial layer and the special active layers with hole-only transport characteristics. The light current density (JL) of the dual-band PM-type OPDs can be slightly increased by incorporating wide-bandgap polymer P-TPDs with relatively large hole mobility (μh) in the active layers. The signal-to-noise ratios of the optimized dual-band PM-type OPDs reach 100,980 under -50 V bias and white light illumination with an intensity of 1.0 mW·cm-2, benefiting from the ultralow JD by employing wide-bandgap PNDIT-F3N as the anode interfacial buffer layer and the increased JL by incorporating appropriate P-TPD in the active layers.

Tunable mid-infrared photodetector based on graphene plasmons controlled by ferroelectric polarization for micro-spectrometer

Surface plasmonic detectors have the potential to be key components of miniaturized chip-scale spectrometers. Graphene plasmons, which are highly confined and gate-tunable, are suitable for in situ light detection. However, the tuning of graphene plasmonic photodetectors typically relies on the complex and high operating voltage based on traditional dielectric gating technique, which hinders the goal of miniaturized and low-power consumption spectrometers. In this work, we report a tunable mid-infrared (MIR) photodetector by integrating of patterned graphene with non-volatile ferroelectric polarization. The polarized ferroelectric thin film provides an ultra-high surface electric field, allowing the Fermi energy of the graphene to be manipulated to the desired level, thereby exciting the surface plasmon polaritons effect, which is highly dependent on the free carrier density of the material. By exciting intrinsic graphene plasmons, the light transmittance of graphene is greatly enhanced, which improves the photoelectric conversion efficiency of the device. Additionally, the electric field on the surface of graphene enhanced by the graphene plasmons accelerates the carrier transfer efficiency. Therefore, the responsivity of the device is greatly improved. Our simulations show that the detectors have a tunable resonant spectral response of 9–14 μm by reconstructing the ferroelectric domain and exhibit a high responsivity to 5.67 × 105 A W−1 at room temperature. Furthermore, we also demonstrate the conceptual design of photodetector could be used for MIR micro-spectrometer application.

Fast Organic Cation Exchange in Colloidal Perovskite Quantum Dots toward Functional Optoelectronic Applications.

Colloidal quantum dots with lower surface ligand density are desired for preparing the active layer for photovoltaic, lighting, and other potential optoelectronic applications. In emerging perovskite quantum dots (PQDs), the diffusion of cations is thought to have a high energy barrier, relative to that of halide anions. Herein, we investigate the fast cross cation exchange approach in colloidal lead triiodide PQDs containing methylammonium (MA+) and formamidinium (FA+) organic cations, which exhibits a significantly lower exchange barrier than inorganic cesium (Cs+)-FA+ and Cs+-MA+ systems. First-principles calculations further suggest that the fast internal cation diffusion arises due to a lowering in structural distortions and the consequent decline in attractive cation-cation and cation-anion interactions in the presence of organic cation vacancies in mixed MA+-FA+ PQDs. Combining both experimental and theoretical evidence, we propose a vacancy-assisted exchange model to understand the impact of structural features and intermolecular interaction in PQDs with fewer surface ligands. Finally, for a realistic outcome, the as-prepared mixed-cation PQDs display better photostability and can be directly applied for one-step coated photovoltaic and photodetector devices, achieving a high photovoltaic efficiency of 15.05% using MA0.5FA0.5PbI3 PQDs and more precisely tunable detective spectral response from visible to near-infrared regions.

Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots.

Solution-processed colloidal III-V semiconductor quantum dot photodiodes (QPDs) have potential applications in short-wavelength infrared (SWIR) imaging due to their tunable spectral response range, possible multiple-exciton generation, operation at 0-V bias voltage and low-cost fabrication and are also expected to replace lead- and mercury-based counterparts that are hampered by reliance on restricted elements (RoHS). However, the use of III-V CQDs as photoactive layers in SWIR optoelectronic applications is still a challenge because of underdeveloped ligand engineering for improving the in-plane conductivity of the QD assembled films. Here, we report on ligand engineering of InSb CQDs to enhance the optical response performance of self-powered SWIR QPDs. Specifically, by replacing the conventional ligand (i.e., oleylamine) with sulfide, the interparticle distance between the CQDs was shortened from 5.0 ± 0.5 nm to 1.5 ± 0.5 nm, leading to improved carrier mobility for high photoresponse speed to SWIR light. Furthermore, the use of sulfide ligands resulted in a low dark current density (∼nA cm-2) with an improved EQE of 18.5%, suggesting their potential use in toxic-based infrared image sensors.

Bismuth-doping induced red-shifted spectral response of homo-epitaxial MAPbBr3 photodiodes

Perovskite single crystals (PSCs) photodiodes with p–n junctions have been widely studied due to their effective blocking of injected current with barriers and quickly separating the electrons and hole pairs with a built-in electric field. Here, we report a solution-processed epitaxial (SPE) growth method to fabricate p–n photodiodes based on MAPbBr3 PSCs. In the structure of the MAPbBr3 PSCs, bismuth donor doping will change the conduction type from p-type to n-type and redshift the absorption edge along with the increase in Bi concentration. Therefore, this work successfully fabricates the p–n photodiodes with homo-epitaxial Bi-doped (n-type) MAPbBr3 layers grown on the surface of undoped (p-type) MAPbBr3 PSCs substrates through the SPE growth method. The p–n photodiodes achieve a tunable spectral response by simply adjusting the Bi doping concentrations of homo-epitaxial MAPbBr3 layers. The spectral response peaks redshift from 559 to 601 nm, with an increasing Bi doping level of 0% to 15%.

Tuning of graphene plasmons by ferroelectric superdomain for mid-infrared photodetector with high responsivity

A new strategy is demonstrated for confining graphene plasmons to resonantly enhance light–matter interactions for tunable mid-IR detection. Our devices consist of integrating monolayer graphene without patterning onto a nanoribbon-connected ring-shaped ferroelectric superdomain with alternately up- and down-polarization. The simulations show that our devices have a tunable spectral response from 11.7 to 19.5 μm by both reconfiguring the ferroelectric superdomain and varying the ferroelectric-gated graphene Fermi level. A highest photoresponsivity of 796–947 A W−1 has been achieved in 10–20 μm. The proof-of-concept photodetector offers the possibility to simplify the fabrication of plasmonic devices and helps the development of applications of tunable mid-IR detection.

Photoemission enhancement of InxGa1-xN nanowire array photocathode

The semiconductor material InxGa1-xN can be used in optoelectronic devices to achieve a tunable wide spectral response. Based on “Spicer's model” and “Andachi's model”, a complete theoretical model of photoemission of reflective InxGa1-xN nanowire array photocathode is established. The results show that the photocathode has a sharp cut-off characteristic, and the increase of the nanowire height is conducive to enhancing the quantum efficiency in the response band. Both oblique light and additional electric field can improve the electron collection efficiency of the anode. With an incidence angle of 0° to 40°, the collection efficiency of photocathodes with H = 800 nm is improved, with a maximum increase of 50.21%. In addition, the electron collection efficiency of nanowire photocathode with H = 400 nm, β = 20°and Eout = 0.4 V/μm can be enhanced by 121% compared to the traditional planar photocathode. This work is expected to provide theoretical guidance for researching the InGaN photocathode electron source.

W18O49 Nanowire Arrays for Plasmonic Photodetector with Electromediated Broadband Photoresponse

Plasmonic semiconductors offer significant advantages for the development of photodetectors with a tunable wide spectral response. Herein, we developed a plasmonic semiconductor photodetector based on the W18O49 nanowire array (NWA) to achieve a tunable broadband photodetector by adjusting the plasmonic absorption intensity of the W18O49 NWA. The plasmonic absorption intensity could be mediated through adjusting the free electron density of the W18O49 NWA by applying the external voltage on the W18O49 NWA-loaded electrode in HCl electrolyte. When the applied voltage decreased from +2 to −2 V, the plasmonic absorption intensity of the W18O49 NWA gradually enhanced due to the increased electron density. As a result, the responsivity and detectivity of the W18O49 NWA-based photodetector in the visible–NIR region were dramatically increased. Especially, upon 940 nm illumination, the responsivity and detectivity could reach ∼47.2 mA W–1 and ∼8.22 × 109 Jones, respectively, which is much higher than the corresponding values (∼2.9 mA W–1 and ∼4.53 × 109 Jones) obtained by the W18O49 NWA-based photodetector with a low plasmonic absorption. This work proposes a promising strategy to construct broadband-tunable photodetectors by using low-cost nonmetallic plasmonic nanostructures.

Nonvolatile Reconfigurable Phase-Shifted Bragg Grating Filter With Tunable Wavelength and Extinction Ratio

Nonvolatile compact on-chip optical filters with a tunable spectral response are required in low-power optical communication systems and applications. By capping phase change materials (PCMs) films on a phase-shifted Bragg grating (PSBG), the key parameters of a filter such as center wavelength and extinction ratio can be tuned simultaneously for filtering or processing purposes. A 9 nm wavelength shift, and amplitude modulations of 16.1 dB in the transmission channel and 42.5 dB in the reflection channel while keeping the center wavelength unchanged are achieved in this filter at 1550 nm. Moreover, the device has a compact size of 500 nm 31.9 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula> m and an insertion loss as low as -0.76 dB, making it ideal for large-scale integration. The advent of such compact, reconfigurable, nonvolatile optical filters opens up new avenues for next-generation low-power general-purpose photonic integrated circuits (PICs) and has potential applications in wavelength division multiplexing (WDM) systems, spectral shaping, and on-chip signal processors.

Intercoupling of Cascaded Metasurfaces for Broadband Spectral Scalability

Electromagnetic metasurfaces have been intensively used as ultra-compact and easy-to-integrate platforms for versatile wave manipulations from optical to terahertz (THz) and millimeter wave (MMW) ranges. In this paper, the less investigated effects of the interlayer coupling of multiple metasurfaces cascaded in parallel are intensively exploited and leveraged for scalable broadband spectral regulations. The hybridized resonant modes of cascaded metasurfaces with interlayer couplings are well interpreted and simply modeled by the transmission line lumped equivalent circuits, which are used in return to guide the design of the tunable spectral response. In particular, the interlayer gaps and other parameters of double or triple metasurfaces are deliberately leveraged to tune the inter-couplings for as-required spectral properties, i.e., the bandwidth scaling and central frequency shift. As a proof of concept, the scalable broadband transmissive spectra are demonstrated in the millimeter wave (MMW) range by cascading multilayers of metasurfaces sandwiched together in parallel with low-loss dielectrics (Rogers 3003). Finally, both the numerical and experimental results confirm the effectiveness of our cascaded model of multiple metasurfaces for broadband spectral tuning from a narrow band centered at 50 GHz to a broadened range of 40~55 GHz with ideal side steepness, respectively.

Spectrally Selective Full-Color Single-Component Organic Photodetectors Based on Donor-Acceptor Conjugated Molecules.

Photodetectors based on organic materials are attractive due to their tunable spectral response and biocompatibility, meaning that they are a promising platform for an artificial human eye. To mimic the photoelectric response of the human eye, narrowband spectrally-selective organic photodetectors are in great demand, and single-component organic photodetectors based on donor-acceptor conjugated molecules are a noteworthy candidate. In this work, we present single-component selective full-color organic photodetectors based on donor-acceptor conjugated molecules synthetized to mimic the spectral response of the cones and rods of a human eye. The photodetectors demonstrated a high responsivity (up to 70 mA/W) with a response time of less than 1 µs, which is three orders of magnitude faster than that of human eye photoreceptors. Our results demonstrate the possibility of the creation of an artificial eye or photoactive eye "prostheses".

Epitaxial Perovskite Single-Crystalline Heterojunctions for Filter-Free Ultra-Narrowband Detection with Tunable Spectral Responses.

Narrowband photodetectors (NPDs) with the capability of detecting light within a selective wavelength range are in high demand for numerous emerging applications such as imaging systems, machine vision, and optical communication. Halide perovskite materials have been developed for eliminating the current complex filtering systems in NPDs due to their beneficial properties, while currently NPDs using perovskite materials are limited by hardly fully eliminated short wavelength response, low charge collection efficiency (CCE), complex fabrication process, and so forth. Herein, a series of perovskite single-crystalline heterojunctions (PSCHs) with a structure of Bi-MAPbX3/MAPbY3 are fabricated by liquid phase epitaxy for filter-free narrowband detection. By varying the halide component in the PSCH, the PSCH-based NPDs can realize continuously tunable spectral response range from blue to NIR regions and ultra-narrow full width at half-maximum (FWHM) of <20 nm. Specifically, the PSCH-based NPD with a high CCE under a large electric filed shows a high spectra rejection ratio of >1000, a fast response speed with rise/fall time of ∼160/∼225 μs, and long-term stability more than 3 months in ambient air. This work provides a simple strategy for designing low-cost and high-performance filter-free NPDs with a tunable spectral response.

Miniaturized spectrometers with a tunable van der Waals junction.

Miniaturized computational spectrometers, which can obtain incident spectra using a combination of device spectral responses and reconstruction algorithms, are essential for on-chip and implantable applications. Highly sensitive spectral measurement using a single detector allows the footprints of such spectrometers to be scaled down while achieving spectral resolution approaching that of benchtop systems. We report a high-performance computational spectrometer based on a single van der Waals junction with an electrically tunable transport-mediated spectral response. We achieve high peak wavelength accuracy (∼0.36 nanometers), high spectral resolution (∼3 nanometers), broad operation bandwidth (from ∼405 to 845 nanometers), and proof-of-concept spectral imaging. Our approach provides a route toward ultraminiaturization and offers unprecedented performance in accuracy, resolution, and operation bandwidth for single-detector computational spectrometers.

Electrically tunable spectral response in vertical nanowire arrays

The semiconductor nanowire (NW) array promises a high photoconductive-gain as well as an enhanced light-absorption in optoelectronic applications. However, to date, the two kinds of advantages are always consuming each other, leading to a low global income. In this work, we show a feasible route to balance the electric gain and the light absorption efficiency. It is accomplished by an inverse injection of photocarriers into NW (from the tip to the bottom of NW or in the opposite direction), which will activate the photoconductive gain in maximal degree. Experimentally, the responsivity reaches up to ∼200 A/W. The spectral response of the GaAs nanowire-array detector is proven to be bias-voltage controlled, allowing it to work at visible or shortwave-infrared enhanced modes. Also, the photoresponse carries on the wavelength information of the incident light, thus, can be used to discriminate monochromatic lights from each other. Together, these findings depict a full image of the photoresponse process in the vertical nanowire array. It might pave a way for the design and fabrication of subwavelength optoelectronic devices.

Si-CMOS-compatible 2D PtSe2-based self-driven photodetector with ultrahigh responsivity and specific detectivity

Photodetectors (PDs) based on two-dimensional (2D) materials are attracting considerable research interest due to the unique properties of 2D materials and their tunable spectral response. However, their performance is not outstanding enough, and the compatibility of their fabrication process with Si-complementary metal oxide semiconductor (CMOS) process flow needs evaluation. Here, we report an unprecedented high-performance, air-stable, self-driven, and broadband room-temperature PD based on the architecture of the PtSe2/ultrathin SiO2/Si heterojunction. The PD exhibits a very prominent responsivity of 8.06 A W−1, a truly high specific detectivity of 4.78 × 1013 cm Hz1/2 W−1, an extremely low dark current of 0.12 pA, and a fantastic photocurrent/dark current ratio of 1.29 × 109 at zero bias. The measured photocurrent responsivities at wavelengths of 375, 532, 1342, and 1550 nm are 2.12, 5.56, 18.12, and 0.65 mA W−1, respectively. Moreover, the fabricated 9 × 9 device array not only illustrates the very high uniformity and reproducibility of the PDs but also shows great potential in the field of ultraviolet-visiblenear infrared illumination imaging applications with a fabrication fully compatible with Si-CMOS technologies. Our design of the PtSe2/ultrathin SiO2/Si heterojunction PD greatly suppresses dark current, improves the diode ideality factor, and increases the potential barrier. Accordingly, it paves the way for a general strategy to enhance the performance of PDs used in novel optoelectronic applications.

Design of vanadium-dioxide-based resonant structures for tunable optical response.

Phase change materials are suitable for tunable photonic devices where the optical response can be altered under external stimuli, such as heat, an electrical or an optical signal. In this scenario, we performed numerical simulations to study the optical properties of a flat unpatterned resonant structure and a grating, both coated with a thin film of vanadium dioxide (VO2). Our results suggest that it is possible to modulate broadband and narrowband reflectance spectra of the resonant structures in the visible to near-infrared range by more than 40 % when the VO2 undergoes an insulator-to-metal phase transition. Resonant devices with a tunable spectral response may find application in sensors, filters, absorbers, and detectors.

Bias Tunable Spectral Response of Nanocrystal Array in a Plasmonic Cavity.

Nanocrystals (NCs) have gained considerable attention for their broadly tunable absorption from the UV to the THz range. Nevertheless, their optical features suffer from a lack of tunability once integrated into optoelectronic devices. Here, we show that bias tunable aspectral response is obtained by coupling a HgTe NC array with a plasmonic resonator. Up to 15 meV blueshift can be achieved from a 3 μm absorbing wavelength structure under a 3 V bias voltage when the NC exciton is coupled with a mode of the resonator. We demonstrate that the blueshift arises from the interplay between hopping transport and inhomogeneous absorption due to the presence of the photonic structure. The observed tunable spectral response is qualitatively reproduced in simulation by introducing a bias-dependent diffusion length in the charge transport. This work expands the realm of existing NC-based devices and paves the way toward light modulators.

Carrier Blocking Layer Materials and Application in Organic Photodetectors.

As a promising candidate for next-generation photodetectors, organic photodetectors (OPDs) have gained increasing interest as they offer cost-effective fabrication methods using solution processes and a tunable spectral response range, making them particularly attractive for large area image sensors on lightweight flexible substrates. Carrier blocking layers engineering is very important to the high performance of OPDs that can select a certain charge carriers (holes or electrons) to be collected and suppress another carrier. Carrier blocking layers of OPDs play a critical role in reducing dark current, boosting their efficiency and long-time stability. This Review summarizes various materials for carrier blocking layers and some of the latest progress in OPDs. This provides the reader with guidelines to improve the OPD performance via carrier blocking layers engineering.