Abstract
The semiconductor material InxGa1-xN can be used in optoelectronic devices to achieve a tunable wide spectral response. Based on “Spicer's model” and “Andachi's model”, a complete theoretical model of photoemission of reflective InxGa1-xN nanowire array photocathode is established. The results show that the photocathode has a sharp cut-off characteristic, and the increase of the nanowire height is conducive to enhancing the quantum efficiency in the response band. Both oblique light and additional electric field can improve the electron collection efficiency of the anode. With an incidence angle of 0° to 40°, the collection efficiency of photocathodes with H = 800 nm is improved, with a maximum increase of 50.21%. In addition, the electron collection efficiency of nanowire photocathode with H = 400 nm, β = 20°and Eout = 0.4 V/μm can be enhanced by 121% compared to the traditional planar photocathode. This work is expected to provide theoretical guidance for researching the InGaN photocathode electron source.
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