Tunable Emitters Research Articles

Strain-Induced Tunable and Field-Free Spintronic THz Emitters Based on Flexible Substrate Heterostructures.

Spintronic THz emitters have been widely studied due to their advantages of broadband frequency, high efficiency, and easy fabrication. The spintronic THz signal is proportional to the magnetization of the ferromagnetic (FM) layer and requires an external magnetic field to maximize the THz signal intensity. Recently, a field-free emitter was designed based on a CoFeB/IrMn3 heterostructure via the exchange bias between two films. However, field-free spintronic THz emitters based on a common FM/nonmagnetic metal structure are rare. Here, we fabricate a tunable and field-free THz emitter with giant THz emission modulation ability based on a polyimide/CoFeB/Pt heterostructure. The THz emission can be modulated by changing the curvature radius of the polyimide substrate. After the emitter is forward bent, the THz radiation without an external magnetic field is stronger than in the flat state with a field, which we attribute to in-plane magnetic anisotropy on the FM layer induced by the tensile strain. When we curve the emitter backward, the THz intensity decreases sharply. Moreover, the modulation (ΔS/Smax) of the THz wave from the forward-curved and backward-curved emitter is over 95%, and the device shows good cyclic repeatability. We provide a novel way to design field-free spintronic THz sources, and flexible devices are promising for application in THz devices.

Tabletop Tunable Chiral Photonic Emitter.

The increasing interest in chiral light stems from its spiral trajectory along the propagation direction, facilitating the interaction between different polarization states of light and matter. Despite tremendous achievements in chiral light-related research, the generation and control of chiral pulses have presented enduring challenges, especially at the terahertz and ultraviolet spectral ranges, due to the lack of suitable optical elements for effective pulse manipulation. Conventionally, chiral light can be obtained from intricate optical systems, by an external magnetic field, or by metamaterials, which necessitate sophisticated optical configurations. Here, leveraging the high harmonic generation process, we propose a versatile tunable chiral emitter, composed of only two planar Weyl semimetals slabs, addressing the challenges in both spectral ranges. Our results open the way to a compact tunable chiral emitter platform in both terahertz and ultra-violet frequency ranges. This advancement holds the potential to serve as the cornerstone for integrated chiral photonics.

Room-temperature efficient and tunable interlayer exciton emissions in WS2/WSe2 heterobilayers at high generation rates.

Transition metal dichalcogenide (TMDC) heterobilayers (HBs) have been intensively investigated lately because they offer novel platforms for the exploration of interlayer excitons (IXs). However, the potentials of IXs in TMDC HBs have not been fully studied as efficient and tunable emitters for both photoluminescence (PL) and electroluminescence (EL) at room temperature (RT). Also, the efficiencies of the PL and EL of IXs have not been carefully quantified. In this work, we demonstrate that IX in WS2/WSe2 HBs could serve as promising emitters at high generation rates due to its immunity to efficiency roll-off. Furthermore, by applying gate voltages to balance the electron and hole concentrations and to reinforce the built-in electric fields, high PL quantum yield (QY) and EL external quantum efficiency (EQE) of ∼0.48% and ∼0.11% were achieved at RT, respectively, with generation rates exceeding 1021 cm-2·s-1, which confirms the capabilities of IXs as efficient NIR light emitters by surpassing most of the intralayer emissions from TMDCs.

High-Performance Tunable Near-Infrared Emitters of Cr3+-Activated Garnet Phosphor Enabled by Chemical Unit Co-Substitution.

The escalating demand for portable near-infrared (NIR) light sources has posed a formidable challenge to the development of NIR phosphors characterized by high efficiency and exceptional thermal stability. Taking inspiration from the chemical unit co-substitution strategy, high-performance tunable (Lu3- xCax)(Ga5- xGex)O12:6%Cr3+ (x = 0-3) phosphors are designed with an emission center from 704 to 780nm and a broadest full width at half maximum (FWHM) of up to 172nm by introducing Ca2+ and Ge4+ ions into the garnet structure. In particular, Lu3Ga5O12:6%Cr3+ demonstrates an anti-thermal quenching phenomenon (I423K = 113.1%). Compared to Lu3Ga5O12:6%Cr3+, Lu2CaGa4GeO12:6%Cr3+ exhibits significantly improved FWHM and IQE by 108nm and 25.5%, respectively, while maintaining good thermal stability (I423K = 80.4%). Finally, Lu2CaGa4GeO12:6%Cr3+ phosphor is combined with a 465nm blue LED chip to fabricate NIR LED devices, exhibiting a NIR electroluminescence efficiency of 13.31%@100mA and demonstrating successful applications in nocturnal illumination and biomedical imaging technology. This work offers a fresh perspective on the design of highly efficient NIR garnet phosphors.

Multi-band enhanced nonreciprocal thermal radiation based on Weyl semimetals

Previous studies manifested that the majority of structures that exhibit nonreciprocal thermal radiation in the mid-infrared are capable of achieving either single-band strong nonreciprocity or multi-band weak nonreciprocity at a large incidence angle. However, few structures can realize multi-band strong nonreciprocity at a small incidence angle. To address such scientific issues, we propose a tunable nonreciprocal thermal emitter based on gallium arsenide (GaAs)/graphene/Weyl semimetal (WSM). This device is capable of achieving strong nonreciprocity at 7.3 μm, 10 μm and 13.6 μm wavelengths at an incidence angle of 25.5°. It is shown that the field enhancement of the GaAs/graphene composite layer can improve the nonreciprocal response of the WSM layer. In addition, by changing the Fermi energy level of graphene and the axial vector b of the Weyl semimetal, tunable nonreciprocal thermal radiation can be realized. What's more, we find that the structure breaks Kirchhoff's law without lithography and an external magnetic field, which reveals the advantages of applying our research in the field of thermal radiation.

Tunable quantum emitters on large-scale foundry silicon photonics

Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300 mm foundry process. With this platform, we achieve single-photon emission via resonance fluorescence and scalable emission wavelength tunability. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries.

Tunable nonreciprocal thermal emitter based on graphene/indium arsenide/silver microstructure

Nonreciprocal thermal radiation has been studied by people. However, previous research has mainly focused on TM waves. Therefore, this article investigates a nonreciprocal transmitter based on TE transverse waves. Nonreciprocal emitters completely violate Kirchhoff's law and can be applied to various thermal radiation devices. However, there is little research on tunable nonreciprocal thermal emitters. In this article, we innovatively replace the previous top metal grating structure with a graphene grating. The gate voltage of graphene can regulate the nonreciprocal radiation intensity of the device in this article, without the need to resimulate the structure, and can achieve tunable strong nonreciprocal radiation effects. When the incident angle is 30°, the azimuth angle is 72° and the external magnetic field is 3 T, the thermal emitter can obtain strong nonreciprocal thermal radiation at a wavelength of about 16.6 μm. The difference between emissivity and absorptivity is greater than 0.91, indicating the presence of significant strong nonreciprocal radiation. We explained the physical background of this effect by studying the electromagnetic field distribution at the resonance peak.

Dual-functional tunable emitter with high visual transparency for energy saving and information encryption

Achieving thermal radiation regulation is attractive in the field of thermal management and information security. However, maintaining high visual transparency simultaneously is a challenging task, but it holds vital importance for applications such as smart windows and multispectral information encryption. Here, we designed and fabricated a multilayer film based on thermochromic material vanadium dioxide (VO2) with high transmittance (62.1 %) in visible region and excellent emissivity regulation (0.3) in mid-infrared region. Besides, quantities of energy saving simulations among 85 administrative districts in the United States and China and outdoor tests in Shanghai were done to verify the performance in different climates for the application of energy saving smart window. Furthermore, by taking advantage of its high transmittance in visible band and emissivity tunability in mid-infrared band, VO2-based multilayer film has demonstrated the enormous potential application for information encryption through a proof-of-concept validation. By presenting the novel strategy to achieve independent multispectral regulation, this work offers a solution for multidisciplinary fields including green buildings, adaptive multi-scenes camouflage and other information security.

Flexible composite film utilizing VO2 self-adaptive photothermal and infrared radiative cooling for continuous energy harvesting

Self-adaptive photothermal (PT) and radiative cooling (RC) based on insulation-metal phase transition vanadium dioxide (VO2) are among the most promising continuous energy harvesting technologies recently. However, previous work relies on rigid substrates that cannot fit complex or non-planar surfaces. Here, we propose a flexible composite film by bonding a VO2 thin film and a polyimide (PI) substrate with polymethyl methacrylate (PMMA), which achieves efficient spectrally self-adaptive broadband absorption/emission and can convert between the daytime PT mode and nighttime RC mode. Because of the inherent absorption of VO2 and the intricate interplay within multi-layer structure, the solar absorptance of the film could to up to 0.886 in the PT mode with the incorporation of an Al2O3 anti-reflection layer. On the other hand, due to the phase change properties of VO2, this film exhibits a broadband infrared emissivity modulation from 0.32 to 0.82 and reaches a maximum RC power of approximately 244.59 W/m2 in the RC mode at night. Moreover, the film maintains the infrared spectrum switching capability and high emissivity in RC mode even after 104 bending cycles. Our work shows potential to broaden the applications of VO2 smart coatings, including tunable selective emitters, thermal management of spacecraft and smart skins.

Tunable single-photon emitters in 2D materials

Abstract Single-photon emitters (SPEs) hold the key to many quantum technologies including quantum computing. In particular, developing a scalable array of identical SPEs can play an important role in preparing single photons – crucial resources for computation – at a high rate, allowing to improve the computational capacity. Recently, different types of SPEs have been found in various 2D materials. Towards realizing scalable SPE arrays in 2D materials for quantum computation, it is required to develop tunable SPEs that can produce identical photons by precisely controlling emission properties. Here, we present a brief review of the recent progress on various tuning methods in different 2D materials. Firstly, we discuss the operation principle of different 2D SPEs along with their unique characteristics. Secondly, we introduce various dynamic strain engineering methods for tuning the emission wavelengths in 2D SPEs. We also present several electric field-induced wavelength tuning methods for 2D SPEs. Lastly, we discuss the outlook of dynamically tunable 2D SPEs towards scalable 2D SPE arrays for realizing practical quantum photonics applications.

Three-dimensional core shell InGaN/GaN heterostructure for color tunable emitters on the aspect ratio controlled GaN nanorods

In the pursuit of developing red, green and blue emitters, comprehension of color tunability in relation to the nanostructure properties is imperative. Hence, we present a systematic study for the fabrication of color tunable emitters based on GaN nanorods (NRs) prepared via two-step etching technique. In the essence of tunable emission wavelength, aspect ratio controlled GaN NRs were employed for the growth of core shell heterostructure of InGaN/GaN multiple quantum wells (MQWs) using MOCVD and the impact of aspect ratio regulation on the emission wavelength modulation was studied. To analyze the role of the GaN NRs aspect ratio in facilitating the tunable emission wavelength, we employed metrological as well as optical characterizations. Photoluminescence spectra results established a direct relation of the aspect ratio to the emission profile of the GaN NRs. Furthermore, power-dependent photoluminescence (PL) and cathodoluminescence (CL) studies clarified the source of the emission, providing confirmation of the active region's exclusive growth on non-polar sidewalls and the absence of polarization-induced fields. Tunneling microscope measurements revealed a direct relation of the GaN NRs aspect ratio to the emission wavelength profile. In conclusion, we studied comprehensively the impact of aspect ratio regulation for the tunable emission wavelength.

Elementary excitations of single-photon emitters in hexagonal boron nitride.

Single-photon emitters serve as building blocks for many emerging concepts in quantum photonics. The recent identification of bright, tunable and stable emitters in hexagonal boron nitride (hBN) has opened the door to quantum platforms operating across the infrared to ultraviolet spectrum. Although it is widely acknowledged that defects are responsible for single-photon emitters in hBN, crucial details regarding their origin, electronic levels and orbital involvement remain unknown. Here we employ a combination of resonant inelastic X-ray scattering and photoluminescence spectroscopy in defective hBN, unveiling an elementary excitation at 285 meV that gives rise to a plethora of harmonics correlated with single-photon emitters. We discuss the importance of N π* anti-bonding orbitals in shaping the electronic states of the emitters. The discovery of elementary excitations in hBN provides fundamental insights into quantum emission in low-dimensional materials, paving the way for future investigations in other platforms.

Coherent light-emitting metasurfaces based on bound states in the continuum

Abstract An emergent need exists for solid state tunable coherent light emitters in the mid-infrared range for spectroscopy, sensing, and communication applications where current light sources are dominated by spontaneous emitters. This paper demonstrates a distinct class of coherent thermal emitters operating in the mid-infrared wavelength regime. The structure of the light source consists of a dielectric metasurface fabricated on a phononic substrate. In this study, we present the first implementation of off-Γ Friedrich–Wintgen bound states in the continuum at mid-infrared wavelengths suitable for developing the next generation of coherent light emitters. Numerical analysis of the emissivity spectrum reveals the interference of resonances leading to avoided crossings and the formation of Friedrich–Wintgen bound states in the radiation spectrum. Additionally, significant localized field enhancements are observed within the metasurface at operating wavelengths. The emissivity spectra measured by reflectivity and emission experiments exhibit temporally coherent emission peaks in the vicinity of the bound state in the continuum, the first such demonstration in the mid-infrared region for wavelengths longer than 7 µm. These results represent a new approach for significant advancement in realizing mid-infrared coherent light emitters with promising implications for future technologies.

Thermally tunable nonreciprocal radiation in lithography-free vanadium dioxide-dielectric-Weyl semimetal stack

Nonreciprocal thermal radiation (NTR) holds great promise in revolutionizing energy harvesting and conversion process, has become a hot topic of various research fields ranging from renewable energy, molecular sensing, to thermal circuitry and camouflage. Despite intensive effort into enhance the nonreciprocal response, static manipulation of NTR has limited the potential application, dynamic control of thermal radiation is highly demanded. Here, by using a multilayered stack comprised of vanadium dioxide (VO2) thin film, germanium (Ge) spacer layer, Weyl semimetal (WSM) layer terminated by molybdenum (Mo) substrate, we propose a thermally tunable nonreciprocal emitter. The effects of the incident angle (θi), azimuthal angle (ϕi), and the thickness of each layer for the VO2/Ge/WSM stack on the characteristics of thermal radiation have been discussed thoroughly. Dominant peaks and dips of nonreciprocity have been obtained with an incident angle of θi=60° and azimuthal angle of ϕi=0°. A switching effect between the near-unity nonreciprocity (”ON”) and zero nonreciprocity (”OFF”) states are induced when the temperature increases from 20 °C to 68 °C. It is shown that the magnitude and sign of the nonreciprocity can be managed simultaneously for transverse electric (s-) and transverse magnetic (p-) polarizations. The proposed structure shows good near-unity nonreciprocity stability in a wide range of θi and ϕi. This structurally lithography-free nonreciprocal thermal emitter not only provides the ability to tune nonreciprocal radiative properties, but also leads to the possible development of power scavenging and conversion devices.

Optimization of a Ge2Sb2Te5-Based Electrically Tunable Phase-Change Thermal Emitter for Dynamic Thermal Camouflage.

Controlling infrared thermal radiations can significantly improve the environmental adaptability of targets and has attracted increasing attention in the field of thermal camouflage. Thermal emitters based on Ge2Sb2Te5 (GST) can flexibly change their radiation energy by controlling the reversible phase transition of GST, which possesses fast switching speed and low power consumption. However, the feasibility of the dynamic regulation of GST emitters lacks experimental and simulation verification. In this paper, we propose an electrically tunable thermal emitter consisting of a metal-insulator-metal plasmonic metasurface based on GST. Both optical and thermal simulations are conducted to optimize the structural parameters of the GST emitter. The results indicate that this emitter possesses large emissivity tunability, wide incident angle, polarization insensitivity, phase-transition feasibility, and dynamic thermal camouflage capability. Therefore, this work proposes a reliable optimization method to design viable GST-based thermal emitters. Moreover, it provides theoretical support for the practical application of phase-change materials in dynamic infrared thermal camouflage technology.

Tunable Single-Photon Emission with Wafer-Scale Plasmonic Array.

Bright, scalable, and deterministic single-photon emission (SPE) is essential for quantum optics, nanophotonics, and optical information systems. Recently, SPE from hexagonal boron nitride (h-BN) has attracted intense interest because it is optically active and stable at room temperature. Here, we demonstrate a tunable quantum emitter array in h-BN at room temperature by integrating a wafer-scale plasmonic array. The transient voltage electrophoretic deposition (EPD) reaction is developed to effectively enhance the filling of single-crystal nanometals in the designed patterns without aggregation, which ensures the fabricated array for tunable performances of these single-photon emitters. An enhancement of ∼500% of the SPE intensity of the h-BN emitter array is observed with a radiative quantum efficiency of up to 20% and a saturated count rate of more than 4.5 × 106 counts/s. These results suggest the integrated h-BN-plasmonic array as a promising platform for scalable and controllable SPE photonics at room temperature.

Tunable narrowband and diffuse metasurface thermal emitters based on doped semiconductors

Narrowband and diffuse thermal emitters are promising in applications like infrared gas sensing and thermophotovoltaics. However, current designs for narrowband and diffuse thermal emitters are typically limited to narrow wavelength ranges and cannot be broadly tuned. In this work, we propose a two-dimensional metasurface emitter that demonstrates a narrowband and diffuse emissivity profile, whose resonance wavelength is tunable in a relatively wide spectral range, by using doped semiconductors. More specifically, we have designed a metal–insulator–metal (MIM)-type metasurface composed of square arrays of indium-doped cadmium oxide (In:CdO) nanopatches. As the doped semiconductor exhibits metallic behavior with its permittivity described by the Drude model, the excitation of localized surface plasmon polaritons in these nanopatches deposited on a dielectric thin film, combined with an In:CdO substrate, can lead to a desirable behavior of narrowband and diffuse thermal emission with a high emissivity peak. By changing the doping concentration of carriers in the doped semiconductor, we show the resonance wavelength of emissivity can be flexibly tuned from around 3.5 to 5.5 μm, without modifying the structural parameters. Moreover, the metasurface can always maintain a diffusive emission profile, whose emissivity peak can persist up to incident angle around 80°, at different doping concentrations. Our proposal of broadly tunable narrowband and diffuse thermal emitters can find important applications in the development of novel devices for infrared gas sensing, thermophotovoltaics, radiative cooling , thermal camouflage and infrared detection.

Near-infrared two-photon excited photoluminescence from Yb3+-doped CsPbClxBr3-x perovskite nanocrystals embedded into amphiphilic silica microspheres.

Nonlinear absorption of metal-halide perovskite nanocrystals (NCs) makes them an ideal candidate for applications which require multiphoton-excited photoluminescence. By doping perovskite NCs with lanthanides, their emission can be extended into the near-infrared (NIR) spectral region. We demonstrate how the combination of Yb3+ doping and bandgap engineering of cesium lead halide perovskite NCs performed by anion exchange (from Cl- to Br-) leads to efficient and tunable emitters that operate under two-photon excitation in the NIR spectral region. By optimizing the anion composition, Yb3+-doped CsPbClxBr3-x NCs exhibited high values of two-photon absorption cross-section reaching 2.3 × 105 GM, and displayed dual-band emission located both in the visible (407-493 nm) and NIR (985 nm). With a view of practical applications of bio-visualisation in the NIR spectral range, these NCs were embedded into silica microspheres which were further wrapped with amphiphilic polymer shells to ensure their water-compatibility. The resulting microspheres with embedded NCs could be easily dispersed in both toluene and water, while still exhibiting a dual-band emission in visible and NIR under both one- and two-photon excitation conditions.

Pyrazino[2,3-f][1,10]phenanthroline-based color-tunable thermally activated delayed fluorescence emitters with AIE characteristics for high-efficiency organic light-emitting diodes

Colour tunable TADF emitters with strong AIE characteristics exhibited EQEs above 20%.

Highly Responsive Switchable Broadband DUV-NIR Photodetector and Tunable Emitter Enabled by Uniform and Vertically Grown III-V Nanowire on Silicon Substrate for Integrated Photonics.

Low-dimensional semiconductor nanostructures, particularly in the form of nanowire configurations with large surface-to-volume-ratio, offer intriguing optoelectronic properties for the advancement of integrated photonic technologies. Here, a bias-controlled, superior dual-functional broadband light detecting/emitting diode enabled by constructing the aluminum-gallium-nitride-based nanowire on the silicon-platform is reported. Strikingly, the diode exhibits a stable and high responsivity (R) of over 200mAW-1 covering an extremely wide operation band under reverse bias conditions, ranging from deep ultraviolet (DUV: 254nm) to near-infrared (NIR: 1000nm) spectrum region. While at zero bias, it still possesses superior DUV light selectivity with a high off-rejection ratio of 106. When it comes to the operation of the light-emitting mode under forward bias, it can achieve large spectral changes from UV to red simply by coating colloid quantum dots on the nanowires. Based on the multifunctional features of the diodes, this study further employs them in various optoelectronic systems, demonstrating outstanding applications in multicolor imaging, filterless color discrimination, and DUV/NIR visualization. Such highly responsive broadband photodetector with a tunable emitter enabled by III-V nanowire on silicon provides a new avenue toward the realization of integrated photonics and holds great promise for future applications in communication, sensing, imaging, and visualization.