Tunable Band Structure Research Articles

Hydrogenation-controlled band engineering of dumbbell graphene

The stability of the dumbbell structure has been confirmed by previous theory and experiment. Based on first-principles calculations, we proposed hexagonal dumbbell graphene (HDB C10) and rectangular dumbbell graphene (RDB C10) monolayers containing periodically raised C (CR) atoms. They turn out to have high mobility semiconductor properties. By adsorbing H atoms on these CR atoms, their band structures can be widely tuned from semiconductor to semimetal. When considering adsorption of two/four H atoms on the unit cell of the dumbbell structure, the bandgap can be increased, and isolated flat band structures can be obtained by further adding or removing H atoms. Remarkably, two different Dirac band structures can be found in the HDB/RDB C10H2-I monolayers. The HDB C10H2-I shows a Dirac cone with isotropic Fermi velocities, while the RDB C10H2-I monolayer exhibits a quasi-one-dimensional Dirac nodal line with varying Fermi velocities along the XS path. Tight-binding (TB) models are constructed including nearest neighbor (NN) and next NN hopping in order to understand our DFT results. These TB models are related to the Su-Schrieffer-Heeger model, and are able to explain the tunable topological properties of the RDB C10H2-I monolayer. They not only are able to explain the different kinds of Fermi velocity, but also can predict the emergence of topological edge states, providing a good platform for research on Dirac fermions. The HDB/RDB C10 monolayer exhibits more freedom of tunable band structures and more stable hydrogen storage capacity, making it superior to graphene. Finally, possible experimental synthesis paths of these DB monolayers are provided.

Phhgraphene: An Anisotropic Dirac Material with Intrinsic Self-Doping Features and a Tunable Band Structure

Phhgraphene: An Anisotropic Dirac Material with Intrinsic Self-Doping Features and a Tunable Band Structure

Investigating the effect of oxygen vacancy on electronic, optical, thermoelectric and thermodynamic properties of CeO2 (ceria) for energy and ReRAM applications: A first-principles quantum analysis

CeO2 thin film-based devices have become hot favorite candidates for researchers due to the outstanding characteristics of ceria such as memory storage materials, high oxygen storage capacity, excellent chemical and thermal stability, high transparency in visible region and highly tunable energy band structures. Developing suitable materials for industrial uses like optoelectronic and thermoelectric devices is the primary goal of researchers in the field of renewable energy. Herein, we have investigated the optical, thermoelectric and thermodynamic properties of CeO2 and [Formula: see text] as promising candidates for energy applications using first-principles calculations. We can observe significant absorption of incident photons by CeO2 and [Formula: see text] near UV region. The highest peaks of the [Formula: see text] are present around 3.7[Formula: see text]eV in spin [Formula: see text] channel, however, in spin [Formula: see text] channel, the highest peaks of the [Formula: see text] are present around 3.5[Formula: see text]eV. The most intense peaks that emerge are due to the transitions of O[[Formula: see text]] to Ce [[Formula: see text]]. The investigated values of [Formula: see text] reveal that CeO2 and [Formula: see text] are active optical materials. CeO2 and [Formula: see text] reflect a negligible number of incident photons ([Formula: see text]%) in the entire energy range. The positive value of the S shows that the CeO2 under study is p-type semiconductor, while [Formula: see text] is n-type semiconductor as its S value is negative. The S values for CeO2 are close to the established standard. As a result, CeO2 is a viable thermoelectric material for use in devices. The figure of merit (ZT) spectra reveals that CeO2 ([Formula: see text]) is a more capable candidate for thermoelectric materials compared to [Formula: see text] ([Formula: see text]). The investigated thermodynamic parameters reveal that CeO2 and [Formula: see text] are dynamically stable compounds.

Probing the tunable multi-cone band structure in Bernal bilayer graphene

Bernal bilayer graphene (BLG) offers a highly flexible platform for tuning the band structure, featuring two distinct regimes. One is a tunable band gap induced by large displacement fields. Another is a gapless metallic band occurring at low fields, featuring rich fine structure consisting of four linearly dispersing Dirac cones and van Hove singularities. Even though BLG has been extensively studied experimentally, the evidence of this band structure is still elusive, likely due to insufficient energy resolution. Here, we use Landau levels as markers of the energy dispersion and analyze the Landau level spectrum in a regime where the cyclotron orbits of electrons or holes in momentum space are small enough to resolve the distinct mini Dirac cones. We identify the presence of four Dirac cones and map out topological transitions induced by displacement field. By clarifying the low-energy properties of BLG bands, these findings provide a valuable addition to the toolkit for graphene electronics.

Band-structure tunability via modulation of planar buckling in ZnO monolayer: Manifestation in optoelectronic and photocatalytic properties

Two-dimensional ZnO materials, with their exceptional characteristics, hold great potential for novel nanoelectronic devices and catalysts. However, the strategy of modulating the electronic properties is still ongoing. To address this challenge, we conducted first-principles calculations to systematically investigate the structural stability, electronic properties and tunability of photocatalytic performance in ZnO monolayers with different planar buckling. The results indicate that ZnO monolayers with different buckling exhibit dynamical and thermal stability. The band edge positions of ZnO monolayers could be effectively controlled by planar buckling, and ZnO monolayers with suitable buckling can serve as potential candidates for visible-light driven water splitting for hydrogen generation. Furthermore, the narrowed band gaps in ZnO monolayers with increasing of planar buckling suggest their potential for use in the design of optoelectronic devices in nanoscale systems. In addition, the stability of buckled ZnO monolayers on Ag/Pt substrates and planar ZnO monolayer on semiconducting blue phosphorus (BlueP) are explored. Interestingly, Ag and Pt metal substrates have been found to be suitable for the growth of buckled ZnO monolayers. While BlueP monolayer is believed to serve as an excellent substrate for the growth of planar ZnO monolayers. These findings offer new strategy for designing planar or buckled ZnO monolayers with potential applications in futuristic nano-optoelectric and photocatalysis systems.

Cobalt-induced localized electronic reconstruction and global band structure adjustment enhance photo-Fenton-like activity in iron-based metal–organic frameworks

Modulations in interatomic localized electron density and occupation states are vital for facilitating efficient Photo-Fenton-like reactions in iron-based metal–organic frameworks (Fe-MOFs). Here, Co-doped Fe-MOFs (FeCox-MOFs) were synthesized through a one-step hydrothermal method, introducing Co(II) with a distinct Jahn-Teller effect and electronegativity. This led to local ligand deficiency, forming exposed Fe-O-Co clusters. This integration facilitated Co coordinatively unsaturated sites (CUSs) to partially acquire electrons from adjacent Fe CUSs, further optimizing the d-band center. As a result, the d-band centers of both Fe (-1.32 eV) and Co (-1.52 eV) CUSs in FeCo2/1-MOFs were higher than that of Fe sites (-1.87 eV) in Fe-MOFs, resulting in enhanced adsorption capability of persulfate (PMS). Notably, Co(II) underwent ligand-driven electron redistribution, populating antibonding orbitals (eg*) and increasing their energy, thereby elevating the conduction band. Concurrently, Co 3d orbitals served as donor energy levels, narrowing the band gap. With the tuned band structure, the eg* of Fe(III) sites experienced rapid electron population upon photoexcitation, expediting Co(III) reduction and enhancing PMS activation. This study provides a unique perspective on the catalytic application of FeCox-MOFs in photo-Fenton-like reactions.

First-principles study on the electronic properties and feasibility of photocatalytic water splitting on Z-scheme GaN/MoS2 heterostructure

In recent years, van der Waals heterostructures have played a significant role in fields such as photocatalysis, quantum devices, sensors, etc., due to their excellent performance exhibited through synergistic interactions between multiple components and the highly customizable design. Two-dimensional transition metal dichalcogenides, with their highly tunable band structures and excellent electrochemical activity, are well-suited for constructing heterostructures. To investigate the specific electronic and photocatalysis properties of relative heterostructure, GaN/MoS2 heterostructure is constructed. Through the first-principles calculation, the Z-scheme GaN/MoS2 heterostructure shows a direct band gap of 0.869 eV. The excellent capability for separating the photogenerated carriers can be inferred from the conduction band offset as high as 1.915 eV and electrostatic potentials Ep of 6.361 eV. At pH = 14, oxygen evolution reaction can spontaneously occur under the photocatalytic action of the GaN/MoS2 heterostructure according to the negative Gibbs differences of −0.514 eV, −3.809 eV, −2.576 eV and −5.718 eV in the four-electron pathways. Therefore, the Z-scheme GaN/MoS2 heterostructure has great prospects in the application of optoelectronic devices and photocatalysis.

Extremely Enhanced Photoluminescence in MoS2-Derived Quantum Sheets.

Molybdenum disulfide (MoS2) quantum sheets (QSs) are attractive for applications due to their tunable energy band structures and optical and electronic properties. The photoluminescence quantum yield (PLQY) of MoS2 QSs achieved by mechanical and liquid exfoliation and chemical vapor deposition is low. Some studies have reported that chemical treatment and elemental doping can improve the PLQY of transition metal dichalcogenides (TMDs), but this is limited by complex instruments and reactions. In this study, a heat treatment method based on a polar solvent is reported to improve the PLQY and photoluminescence (PL) intensity of MoS2 QSs at room temperature. The absolute PLQY of treated MoS2 QSs is increased to 18.5%, and the PL intensity is increased by a factor of 64. This method is also effective for tungsten disulfide (WS2) QSs. The PL enhancement of QSs is attributed to oxidation of the edges. Such passivation/deformation of MoS2 QSs facilitates the radiative route rather than the nonradiative route, resulting in extreme enhancement of the PL. Our work could provide novel insights/routes toward the PL enhancement of TMD QSs.

Solar‐Driven Selective Oxidation Over Bismuth‐Based Semiconductors: From Prolific Catalysts to Diverse Reactions

AbstractSynthesis of organic compounds often necessitates rigorous reaction conditions or the involvement of hazardous oxidants, resulting in substantial energy consumption and considerable environmental damage. Photocatalytic selective oxidation represents a green and environmentally friendly way to obtain high‐value chemicals, which has developed rapidly in recent years. Bismuth‐based (Bi‐based) semiconductor materials have gained intense interest in selective organic synthesis due to their diverse crystal structures and compositions, tunable band structure, and outstanding photocatalytic performance. Herein, a systematic summary of the solar‐driven selective oxidation over varieties of Bi‐based semiconductors is provided. Initially, the reactive species involved in selective oxidation, Bi‐based materials widely used in photocatalytic selective oxidation, and the methods for synthesizing these Bi‐based materials are meticulously classified. Concerning their selective oxidation reactions, a variety of modification strategies, with a focus on the separation of photogenerated carriers and the regulation of reactive species is extensively documented. Highlights are the diverse applications and mechanism discussions of Bi‐based photocatalysts in the oxidation reactions, including alcohol oxidation, C─H bond activation, amine oxidation, and sulfide oxidation, as well as the coupling reactions with photoreduction. Finally, the future development prospects and challenges of Bi‐based photocatalysts in the field of selective oxidation is proposed, hoping to provide valuable insights and guidance for the design of photocatalysts for selective oxidation.

Pressure-induced DFT evaluation of MSnI3 (M = K, Rb) perovskites for electronic phase transition and enhanced optoelectronic utilization

In optoelectronic device applications, perovskite materials have overtaken other compounds because of their exceptional power conversion efficiencies. Lead-based perovskites have found extensive use; however, their widespread adoption is hindered by the inherent toxicity associated with lead content. In contrast, lead-free metal halide perovskites have taken the dominant position in the commercialization of optoelectronic devices by offering high efficiency, affordability, flexibility, tunability, and environmental benefits. To better understand the structural, electronic, bonding, optical, elastic, and mechanical properties of the non-toxic MSnI3 (M = K, Rb) metal halides under different hydrostatic pressures, a first-principles simulation has been carried out with the use of density functional theory (DFT). Lattice parameters and electronic band structures have been computed using both the Generalized Gradient Approximation (GGA) and the non-local hybrid sX (Hartree-Fock screened exchange) functional. Utilizing the sX method results in enhanced band gap values for MSnI3 (M = K, Rb) perovskite compounds. The application of pressure has led to a decrease in both lattice parameters and band gaps, marking a transition from a semiconductor to a metallic state. The projection of the density of states and their electronic orbital contributions are also explored to evaluate the band structure tuning of MSnI3 (M = K, Rb) under pressure. The bond length calculation and the charge density mapping confirm the existence of both the ionic and covalent bonds in MSnI3 (M = K, Rb). Additionally, the pressure-induced calculation suggests that the bonds between both compounds will be stronger at high pressure. Increasing hydrostatic pressure causes a dramatic movement of the absorption edge of MSnI3 (M = K, Rb) perovskites into the low energy region (a red shift), which is revealed by the analysis of optical functions. The optical functions’ investigation indicates that the hydrostatic pressure allows the compounds even better for a number of possible uses. The mechanical qualities are a direct reflection of the ductile and anisotropic nature of the compounds, both of which are significantly influenced by the external pressure.

Effects of rare-earth Pr3+-Dy3+ doping on structural, magnetic, optical and dielectric properties of Zn2Y hexaferrite

This study was conducted to investigate the properties of Pr3+-Dy3+ doped Zn2Y-type hexaferrite for potential technological applications. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and field-emission scanning electron microscopy (FESEM) were used to analyze structural properties. The crystallite size in the synthesized samples varies between 57.54 and 68.57 nm. The vibrational bands at 400 and 600 cm−1, common to all hexaferrites, were confirmed through FTIR. The FESEM analysis reveals an agglomeration of magnetic grains and a decrease in the average grain size from 1.24 to 1.06 μm. The M-H loops show that, with x values of 0.0, 0.1, and 0.2, the saturation magnetization is determined to be 34.76, 34.23, and 32.52 emu/g, respectively. The corresponding coercivity values are 21.24, 30.39, and 33.99 Oe. UV–visible spectroscopy using Tauc theory reveals an increase in the optical band gap from 2.32 to 2.50 eV, indicating a tunable energy band structure by incorporating Pr3+-Dy3+ ions. The dielectric constant increases, whereas AC conductivity decreases with increased Pr3+-Dy3+ concentration. The obtained results suggest the potential suitability of these materials for various technological applications.

Spotlight: Visualization of Moiré Quantum Phenomena in Transition Metal Dichalcogenide with Scanning Tunneling Microscopy.

Transition metal dichalcogenide (TMD) moiré superlattices have emerged as a significant area of study in condensed matter physics. Thanks to their superior optical properties, tunable electronic band structure, strong Coulomb interactions, and quenched electron kinetic energy, they offer exciting avenues to explore correlated quantum phenomena, topological properties, and light-matter interactions. In recent years, scanning tunneling microscopy (STM) has made significant impacts on the study of these fields by enabling intrinsic surface visualization and spectroscopic measurements with unprecedented atomic scale detail. Here, we spotlight the key findings and innovative developments in imaging and characterization of TMD heterostructures via STM, from its initial implementation on the in situ grown sample to the latest photocurrent tunneling microscopy. The evolution in sample design, progressing from a conductive to an insulating substrate, has not only expanded our control over TMD moiré superlattices but also promoted an understanding of their structures and strongly correlated properties, such as the structural reconstruction and formation of generalized two-dimensional Wigner crystal states. In addition to highlighting recent advancements, we outline upcoming challenges, suggest the direction of future research, and advocate for the versatile use of STM to further comprehend and manipulate the quantum dynamics in TMD moiré superlattices.

The Development of Carbon/Silicon Heterojunction Solar Cells through Interface Passivation.

Passivating contactsin heterojunction (HJ) solar cells have shown great potential in reducing recombination losses, and thereby achieving high power conversion efficiencies in photovoltaic devices. In this direction, carbon nanomaterials have emerged as a promising option for carbon/silicon (C/Si) HJsolar cells due to their tunable band structure, wide spectral absorption, high carrier mobility, and properties such as multiple exciton generation. However, the current limitations in efficiency and active area have hindered the industrialization of these devices. In this review, they examine the progress made in overcoming these constraints and discuss the prospect of achieving high power conversion efficiency (PCE) C/Si HJ devices. A C/Si HJ solar cell is also designed by introducing an innovative interface passivation strategy to further boost the PCE and accelerate the large area preparationof C/Si devices. The physical principle, device design scheme, and performanceoptimization approaches of this passivated C/Si HJ cells are discussed. Additionally, they outline potential future pathways and directions for C/Si HJ devices, including a reduction in their cost to manufacture and their incorporation intotandem solar cells. As such, this review aims to facilitate a deeperunderstanding of C/Si HJ solar cells and provide guidance for their further development.

Construction of NiS/MnCdS S-scheme heterojunction for efficient photocatalytic overall water splitting: Regulation of surface sulfur vacancy and energy band structure

The overall water splitting based on specific photocatalysts is one of the ultimate ways to solve the energy and environmental crisis facing humanity. Sulfide photocatalysts have greater potential in photocatalytic production of solar fuel. However, due to its easy photocorrosion phenomenon, it not effectively driving the water oxidation semi-reaction to produce oxygen, so how to use sulfide photocatalyst to decompose pure water to achieve stoichiometric reaction of H2/O2 production remains a quite challenging task. Herein, sulfur vacancies-rich MnCdS nanoparticles were modified with NiS nanosheets through the hydrothermal derivation method. Different concentration gradients of sulfur-vacancy in MnCdS nanoparticles (MnCdS-Vs-X) with tunable band structures were successful prepared by regulating the concentration of hydrazine hydrate, thus improves the efficiency of light energy utilization and charge separation and the existence of S defects was verified by transmission electron microscopy (TEM) and electron paramagnetic resonance (EPR). The density function theory (DFT) calculation bears out that the draw into of S vacancy adjusted the band structure of MnCdS. Moreover, the successful construction of an S-scheme heterojunction between NiS and MnCdS-Vs-3 has been strongly demonstrated by in-situ XPS and UPS, which promoted interfacial charge separation and further improved the photocatalytic hydrogen evolution efficiency. The as-obtained S-scheme 20 %NiS/MnCdS-Vs-3 heterojunction exhibit excellent visible-light H2 production activity of 4099.55 μmol g−1h−1, 6.75 times higher than pure MnCdS. Most importantly, the excellent and stable photocatalytic overall water splitting activity of H2-509.70 μmol g-1h−1/O2-254.90 μmol g-1h−1 were obtained over 20 % NiS/MnCdS-Vs-3, which further demonstrates the application value of NiS/MnCdS-Vs-3 photocatalysts. This work proposes new ideas for the application of S-vacancies and S-scheme heterojunction in addressing the stability issues associated with sulfide-based photocatalysts in photocatalytic water splitting.

Two-Dimensional Conjugated Polymers: a New Choice For Organic Thin-Film Transistors.

Organic thin-film transistors (OTFTs) as a vital component among transistors have shown great potential in smart sensing, flexible displays, and bionics due to their flexibility, biocompatibility and customizable chemical structures. Even though linear conjugated polymer semiconductors are common for constructing channel materials of OTFTs, advanced materials with high charge carrier mobility, tunable band structure, robust stability, and clear structure-property relationship are indispensable for propelling the evolution of OTFTs. Two-dimensional conjugated polymers (2DCPs), featured with conjugated lattice, tailorable skeletons, and functional porous structures, match aforementioned criteria closely. In this review, we firstly introduce the synthesis of 2DCP thin films, focusing on their characteristics compatible with the channels of OTFTs. Subsequently, the physics and operating mechanisms of OTFTs and the applications of 2DCPs in OTFTs are summarized in detail. Finally, the outlook and perspective in the field of OTFTs using 2DCPs are provided as well.

Structural anisotropy in Sb thin films

Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence on their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb2 flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (211) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1̄10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection of high-energy electron diffraction patterns, misfit dislocation formation, surface morphology, and transport properties. Our DFT calculations show that the preferential orientation of the rhombohedral Sb (211) plane may originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi1−xSbx thin films with similar lattice parameters and an identical crystal structure, as well as functional heterostructures of them with III–V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation.

The g-ZnO/PtSe2 S-scheme heterojunction with controllable band structure for catalytic hydrogen production

The structural, photo-electronic catalytic properties, and the biaxial strain modulation of band structure for the g-ZnO/PtSe2 S-scheme heterojunction are studied by First-principles calculation. The stability for the heterojunction is verified by negative generation energy and ab-initio molecular dynamic simulation. The photo-generated carrier motion and band structure are in accordance with the S-scheme, and the electron mobility of up to 2023 cm2/Vs is obtained in the Zigzag direction. The absorption of visible light is improved, and an absorption peak of 2.893 × 105 cm−1 at 434.337 nm is observed. Due to a higher redox potential, photocatalytic water splitting can occur in the pH range of 0∼14, and a high solar to hydrogen (STH) efficiency of 30.7 % is obtained. The over-potential of hydrogen evolution reaction (HER) (3.719 V) is lower than oxygen evolution reaction (4.128 V), which tends to proceed at the g-ZnO interface. When the strain ≥4 %, the bandgap alignment of the g-ZnO/PtSe2 heterojunction changes from a staggered gap (Type-Ⅱ) to straddling gap (Type-Ⅰ). The g-ZnO/PtSe2 heterojunction exhibits high electron mobility, high STH efficiency, strong absorption of visible light, strong HER ability, and a tunable band structure, expecting as a promising candidate material for catalytic water splitting.

From molecular salt to layered network: cation-driven tuning of band gap, structure, and charge transport in A3Bi2I9 (A = Cs, Rb) perovskites.

The increasing demand for eco-friendly and stable optoelectronic materials has led to interest in all-inorganic lead-free halide perovskites. This study reports the synthesis of A3Bi2I9 (A = Cs, Rb) perovskites via a solvothermal technique. The materials crystallize in hexagonal and monoclinic structures, with micrometer-sized particles. Optical investigations reveal direct band-gaps of 2.03 eV for Cs3Bi2I9 and 1.90 eV for Rb3Bi2I9. Raman spectroscopy highlights distinct vibrational modes, influenced by their structural differences. Space charge limited current (SCLC) measurements indicate varying threshold voltages and trap densities. Impedance spectroscopy and Jonscher's power law analysis reveal different polaron tunneling mechanisms in each compound. Ultrafast transient absorption spectroscopy shows the formation of self-trapped states upon photoexcitation, linked to lattice distortion and the formation of small polarons, which affect electrical conductivity.

Band engineering in iron and silver co-doped double perovskite nanocrystals for selective photocatalytic CO2 reduction

We report iron and silver co-doped Cs2NaInCl6 double perovskite nanocrystals which resulted precise tuning of electronic band structure. The synthesized nanocrystals were utilized for selective photocatalytic CO2 reduction into methane.

Research progress of perovskite-based triple-junction tandem solar cells

The energy conversion efficiency of single-junction solar cells is limited by the Shockley-Queisser theory and the most effective strategy to break through this limit is to fabricate multi-junction tandem solar cells. Perovskite materials offer a continuously tunable energy band structure, which provides a new option for light-absorbing materials in multi-junction tandem cells. In the field of perovskite-based multi-junction tandem solar cells, triple-junction tandem solar cells demonstrating immense potential. The present paper introduces the configuration of triple-junction solar cells and addresses three scientific challenges. 1）Ensuring energy level alignment among sub-cells is a critical concern for three-junction batteries. Specifically, the top wide-band gap sub-cell must possess a band gap ranging from 1.8eV to 2.2eV; however, current perovskite material systems with wide-band gaps exhibit certain defects. 2） attaining current matching in multi-junction tandem solar cells while optimizing the absorption layer and minimizing parasitic absorption is essential to maximize solar cell current output. 3） The functional layers of multi-junction tandem solar cells are sequentially stacked using different deposition methods, thereby imposing higher compatibility requirements on the intermediate interconnect layer. Subsequently, the research progress of perovskite-based triple-junction tandem solar cells is then presented, encompassing perovskite/perovskite/silicon tandem solar cells, perovskite/perovskite/organic tandem solar cells, and all-perovskite tandem solar cells. Their respective highest efficiencies are 19.4%, 23.87%, and 27.1%. Finally, this paper examines the research direction for further enhancing the performance of triple-junction solar cells. In addition to augmenting energy conversion efficiency, perovskite-based solar cells must address stability issues in order to achieve future commercialization, thereby offering guidance for the development of efficient triple-junction cells.