This paper presents the Finite-Element-Method (FEM) analyses, the processing, and the characterization of micro cantilever beams, which are driven by the transversal piezoelectric effect of two PbZr 0.45 Ti 0.55 O 3 (PZT) thin films with an internal platinum electrode. SiO 2 /Si 3 N 4 is used as elastic substrate for this stack. For the development of this thin film bimorph silicon bulk micro machining is used in combination with chemical solution deposition (CSD), sputter technology and reactive ion etching (RIE). For electrical and piezoelectric characterization of the PZT films CV-, hysteretic, and double beam laser interferometer measurements are carried out. The findings are compared to the FEM analyses and the results of a single piezoelectric layer design [1].