This paper concerns the experimental evaluation of ion implantation into silicon by PAS using a newly developed transparent transducer method. With this method, the transparent transducer and the sample are directly touched without using glue, the reproducibility of the experiment is excellent and the problem in the conventional method of PA signal intensity being nonlinear to incident light intensity can be solved. The experimental results including the recovery of thin ion implanted layer by thermal annealing are observed using the transparent transducer method and are compared with those using PDS.