The distinguished transparent conductive indium tin oxide (ITO) based multilayer films with thin copper-aluminium (Cu-Al) metals interlayer (ITO/Cu-Al/ITO) were prepared on p-type silicon (Si) by radio frequency and direct current magnetron sputtering methods. The ITO/Cu-Al/ITO (ICAI) films structural, topological, optical and electrical properties coupled with electronic properties of ICAI/p-type Si interface were investigated at different post annealing temperature up to 600 °C. Despite the inclusion of Cu-Al metals interlayer, structural analysis results yielded an amorphous structure for the as-deposited films. The films become polycrystalline with a cubic bixbyite structure after post annealing treatment. Dominant In2O3 (222) and Cu (111) peaks intensities were observed at 500 °C and 600 °C indicating substantial enhancement in the films crystallinity at high moderate temperatures. The ICAI films reveal a smooth surface roughness with improved growth in grain size after post annealing treatment as examined by microscopic equipment.The films optical transmittance promptly increased from 73.2% (for as deposited film) to 88.7% (for annealed film at 600 °C) at 470 nm in the visible region with increasing post annealing temperature. The film annealed at 600 °C exhibits excellent electrical characteristics with a very low electrical resistivity of 2.44 × 10−5 Ω cm and sheet resistance of 3.26 Ω/sq. The ICAI films optoelectronic properties as calculated by figure of merit (FOM) show outstanding performance at 600 °C with a high FOM of 92.47 × 10−3 Ω−1 in spite of the reduced ITO films thickness. In addition, admirable ICAI/p-type Si interface quality was observed after post annealing treatment (at 600 °C) as indicated by current-voltage characteristics results. These improved ICAI multilayer films can be favourable for silicon heterojunction solar cells and other low resistance optoelectronic applications.