Although n-type transparent conducting oxides (TCOs) with visible-light transparency and electric conductivity have been used in industry for decades, their p-type counterparts have not been commercialized. To search for promising p-type TCOs, computational screening was applied by several research groups in the last decade. However, screening of a wide material space is mainly based on the approximated physical quantities, such as underestimated band gaps, and band-alignment techniques. In particular, it is unlikely that band alignments can predict the dopability of a wide range of insulators because they do not include information about the chemical potentials of the constituent elements. In this study, we use optical absorption spectra calculated with dielectric dependent hybrid functionals and the formation energies of oxygen vacancies as screening parameters. Oxygen vacancies are known to act as hole killers when seeking p-type TCOs, and indeed, only 156 out of the 845 oxides are found to have benign oxygen vacancies for p-type doping. As a result, we identify six potential p-type TCOs from 845 oxides: ${\mathrm{Na}}_{3}{\mathrm{Ag}\mathrm{O}}_{2}$, ${\mathrm{Rb}}_{2}{\mathrm{Pb}}_{2}{\mathrm{O}}_{3}$, ${\mathrm{Cs}}_{2}{\mathrm{Pb}}_{2}{\mathrm{O}}_{3}$, $\mathrm{Cs}\mathrm{Cu}\mathrm{O}$, ${\mathrm{K}}_{2}{\mathrm{Pb}}_{2}{\mathrm{O}}_{3}$, and ${\mathrm{B}}_{6}\mathrm{O}$. ${\mathrm{Na}}_{3}{\mathrm{Ag}\mathrm{O}}_{2}$, ${\mathrm{Rb}}_{2}{\mathrm{Pb}}_{2}{\mathrm{O}}_{3}$, and ${\mathrm{Cs}}_{2}{\mathrm{Pb}}_{2}{\mathrm{O}}_{3}$ are identified as potential p-type TCOs, while $\mathrm{Cs}\mathrm{Cu}\mathrm{O}$, ${\mathrm{K}}_{2}{\mathrm{Pb}}_{2}{\mathrm{O}}_{3}$, and ${\mathrm{B}}_{6}\mathrm{O}$ were previously proposed. By analyzing the electronic structures and point-defect properties of ${\mathrm{Na}}_{3}{\mathrm{Ag}\mathrm{O}}_{2}$, $\mathrm{Cs}\mathrm{Cu}\mathrm{O}$, and ${\mathrm{K}}_{2}{\mathrm{Pb}}_{2}{\mathrm{O}}_{3}$ in detail, we find that they show p-type conductivity, even without external doping, which validates the use of the formation energies of oxygen vacancies as descriptors of the p-type dopability of oxides.
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