Interfaces with crystalline Si (c-Si) and dry oxide grown over the c-Si have been observed using high resolution transmission electron microscopy (HRTEM). The lattice image of c-Si near the interface varies depending on the specimen thickness. For a very thin region of the specimen, the interface was observed to be very much roughened, and seemed to be abrupt (the so called interfacial layer was not observed between the c-Si and the amorphous SiO2 (a-SiO2)). On the contrary, the interface seemed to be flat and to consist of some steps of one or two monolayers high for the thick region. Furthermore, a lattice image with Si(220) periodicity has been observed at the interface. A possible structure for the Si/SiO2 interface derived from the observed interface image is that the roughened surface of the c-Si protrusions is directly connected to the SiO2 network with no interface layer between them. The observed flat interface of the thick region is a superposed image of the randomly distributed Si protrusions over the direction of the transmitted electron beam. In order to examine the postulated interface structure, a simulation of the lattice image has been performed. The results of the simulation indicate that the half-space image observed at the interface of the thick region can be attributed to the interface roughness, and the abrupt interface image observed for the thin region can be obtained by the same interface structure. Since a completely flat interface cannot provide such a specimen thickness dependence of the image, the (100)Si/SiO2 interface must be rough, and in our sample, the height of the roughness was about 4 monolayers.