Transmission Line Test Structures Research Articles

Analyses of Substrate-Dependent Broadband Microwave (1–40 GHz) Dielectric Properties of Pulsed Laser Deposited Ba0.5Sr0.5TiO3 Films

Ba0.5Sr0.5TiO3 (BST-0.5) thin films (600 nm) were deposited on single crystal MgO, SrTiO3 (STO), and LaAlO3 (LAO) substrates by pulsed laser deposition at an oxygen partial pressure of 80 mTorr and temperature of 720 °C. X-ray diffraction and in situ reflection high-energy electron diffraction routinely ascertained the epitaxial quality of the (100)-oriented nanocrystalline films. The broadband microwave (1–40 GHz) dielectric properties were measured using coplanar waveguide transmission line test structures. The out-of-plane relative permittivity (ε⏊/) exhibited strong substrate-dependent dielectric (relaxation) dispersions with their attendant peaks in loss tangent (tanδ), with the former dropping sharply from tens of thousands to ~1000 by 10 GHz. Although homogeneous in-plane strain (ϵǁ), enhances ε⏊/ with εMgOBST−0.5⏊/>εSTOBST−0.5⏊/>εLAOBST−0.5⏊/ at lower frequencies, two crossover points at 8.6 GHz and 18 GHz eventually change the trend to: εSTOBST−0.5⏊/>εLAOBST−0.5⏊/>εMgOBST−0.5⏊/. The dispersions are qualitatively interpreted using (a) theoretically calculated (T)−(ϵǁ) phase diagram for single crystal and single domain BST-0.5 film, (b) theoretically predicted ϵǁ-dependent, ε⏊/ anomaly that does not account for frequency dependence, and (c) literature reports on intrinsic and extrinsic microstructural effects, including defects-induced inhomogeneous strain and strain gradients. From the Vendik and Zubko model, the defect parameter metric, ξs, was estimated to be 0.51 at 40 GHz for BST-0.5 film on STO.

High-Performance Slow-Wave Transmission Lines With Optimized Slot-Type Floating Shields

A novel slow-wave transmission line with optimized slot-type floating shields in advanced CMOS technology is presented. Periodical slot-type floating shields are inserted beneath the transmission line to provide substrate shielding and to shorten the electromagnetic (EM) propagation wavelength. This is the first study that demonstrates how the wavelength, attenuation loss, and characteristic impedance can be adjusted by changing the strip length (SL), strip spacing (SS), and metal layer position of the slot-type floating shields. Wavelength shortening needs to be achieved with a tradeoff between slow-wave effect and attenuation loss. The slot-type floating shields with different SLs, SSs and metal layer positions are analyzed. It is concluded that minimum SL provides the most optimal result. A design guideline can be established to enable circuit designers to reach the most appropriate slot-type floating shields for optimal circuit performance. Transmission line test structures were fabricated by using 45-nm CMOS process technology. Both measurement and EM waves simulation were performed up to 50 GHz. Transmission lines are frequently used at a length of half- or quarter-wavelength. With a shortened wavelength, a saving in silicon area of more than 67% can be achieved by using optimized slot-type floating shields. Experimental results demonstrated a higher effective relative permittivity value, which is improved by a factor of more than 9, and a better quality factor, which is improved by a factor of more than 6, as compared to conventional transmission lines.

Prediction of transmission line lifetimes over temperature and current density

Transmission line test structures are stressed at ambient temperatures ranging from 75 to 160 °C and current densities from ∼5 to 7 MA/cm 2. Failure is considered to have occurred when the resistance increases by 10% over its initial value. Failure times are modeled using Black’s equation and the E a and current density exponent ‘ n’ are found to be ∼1 eV and ∼2–4, respectively, in agreement with the literature. Predicted FIT rates are found to be negligible easily meeting even the most severe FIT budget. Experimental evidence suggests that the current density used in testing is well above the critical Blech value. Predicted lifetimes at J = 2.3 MA/cm 2 are consistent with observation, indicating that high stress data can be used to predict low stress behavior.

Low-Loss Patterned Ground Shield Interconnect Transmission Lines in Advanced IC Processes

In this paper, we provide an extensive experimental and theoretical study of the benefits of patterned ground shield interconnect transmission lines over more conventional layouts in advanced integrated-circuit processes. As part of this experimental work, we present the first comparative study taken on truly differential transmission line test structures. Our experimental results obtained on transmission lines with patterned ground shields are compared against a predictive compact equivalent-circuit model. This model employs exact closed-form expressions for the inductances, and describes key performance figures such as characteristic impedance and attenuation loss with excellent accuracy

Limitations on the extraction of loss tangent from submicron transmission line test structures

When two-port S-parameters are used to characterize microstrip transmission line test structures, finite phase measurement precision, small reference plane offsets, and signals below the measurement threshold can significantly limit the ability to extract loss tangent from transmission lines with finite series resistance. By considering these errors, it is possible to select test structure geometries that minimize the impact of these errors.

Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor

We report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 Å/40 Å) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on p-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500 °C yield the lowest specific contact resistance rc ( 0.016 Ω-cm2 at a current density of 66.7 mA/cm). Based on the extracted rc from the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for ∼ 88% of the total series resistance of the LED.

Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer Movpe Reactor

AbstractWe report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 Å/40 Å) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on p-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500°C yield the lowest specific contact resistance rc (0.016 Ω-cm2 at a current density of 66.7 mA/cm). Based on the extracted rc from the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for ∼ 88% of the total series resistance of the LED.