We propose a different scheme for achieving valley splitting using an electric field in the materials with inversion symmetry but without time-reversal symmetry, and apply this scheme to two-dimensional transition metal trihalides $\text{V}{X}_{3}$ ($X=\text{Cl}$, Br). Based on ab initio calculations and the tight-binding model, we find few layer $\text{V}{X}_{3}$ can be readily tuned from intrinsic quantum anomalous Hall insulators to quantum valley Hall insulators by external electric fields. Especially, the electric-field-induced valley splitting of the bilayer $\text{V}{X}_{3}$ is extremely large, about two orders of magnitude higher than that induced by a magnetic field in the state-of-the-art valleytronic materials (e.g., ${\mathrm{MoS}}_{2}$ and ${\mathrm{WSe}}_{2}$). We further reveal rich topological phases of few layer $\text{V}{X}_{3}$ and valley-polarized states at the phase boundary. These findings may motivate further topology and valleytronics related researches in low-dimensional transition metal compounds.