Transimpedance Amplifier Research Articles

100 Gbit/s PAM-4 Linear Burst-Mode Transimpedance Amplifier for Upstream Flexible Passive Optical Networks

Next-generation passive optical networks (PONs) with upstream rates of 50 Gbit/s and beyond will require a new class of burst-mode transimpedance amplifiers (BMTIAs) that are linear to enable (digital) equalization of channel impairments. Such linear BMTIAs also enable higher-order modulation formats like 4-level pulse amplitude modulation (PAM-4). In this paper, we demonstrate operation of a novel linear BMTIA integrated together with a commercial off-the-shelf 25G-class avalanche photodiode (APD), achieving 50 Gbit/s non-return-to-zero (NRZ) operation with a sensitivity of -23.7 dBm optical modulation amplitude (OMA) and dynamic range exceeding 21.7 dB and 100 Gbit/s PAM-4 operation with a sensitivity of -15.8 dBm OMA and dynamic range exceeding 15.4 dB, both at a bit error ratio (BER) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$10^{-2}$</tex-math></inline-formula> . In addition, fast burst-mode gain-control and balancing circuits limit loud-soft sensitivity penalties in the case of AC-coupled circuits to less than 1.3 dB. The chip was designed in a 0.13 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula> m SiGe:C BiCMOS technology, has an area of 1.2×1.7 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{2}$</tex-math></inline-formula> and consumes between 260 mW and 310 mW. This receiver paves the way to a next-generation class of BMTIAs, supporting the ITU-T G.9804.3 Amd 1 standard.

Design of a low-power 180 nm broadband CMOS transimpedance amplifier for bio-medical &amp; IoT applications

Design of a low-power 180 nm broadband CMOS transimpedance amplifier for bio-medical &amp; IoT applications

Quantitative comparison of excitation modes of tuning forks for shear force in probe microscopy

This article provides a careful comparison between the electric and mechanical excitation of a tuning fork for shear force feedback in scanning probe microscopy, an analysis not found in present literature. A setup is designed and demonstrated for robust signal and noise measurements at comparable levels of physical movement of the probe. Two different signal amplification methods, combined with two excitation ways provide three possible configurations. For each method a quantitative analysis, supported by analytical elaboration and numerical simulations, is provided. Finally, it is shown that in practical circumstances electric excitation followed by detection with a transimpedance amplifier provides the best result.

Differential high gain transimpedance amplifier with –3dB-bandwidth extension

In this article, a three-stage transimpedance amplifier (TIA) is designed and optimized to convert the input current to the output voltage and amplify it. The amplifier consists of a single-to-differential cross-coupled modified RGC (Regulated Cascode) input stage. The proposed TIA adopts a gm-boosted technique in the input stage by adding an auxiliary circuit that increases the –3dB-bandwidth by about 580 MHz, which lowers the input impedance resulting in a high input pole frequency. Also, an fT doubler stage and a third stage with minimum power consumption for fT doubling (second stage) and increasing gain are used respectively. The area consumption is reduced by replacing the conventional fT doubler topology resistors with transistors. Both stages of designed amplifiers have a variable gain mechanism. In the post-layout simulation, the circuit has a variable gain mechanism and a gain of up to 99 dBΩ with a –3dB-bandwidth of 720 MHz and an input-referred noise of 11.42 PA/√Hz. The post layout simulation is performed in 180 nm CMOS technology. The circuit's core power consumption is 6.0624 mW and occupies 0.051 mm × 0.06136 mm of area.

62‐1: Distinguished Student Paper: Ultraviolet Photodetectors and Readout Based on a‐IGZO Semiconductor Technology

In this work real‐time ultraviolet photodetectors are realized through metal‐semiconductor‐metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an allenhancement a‐IGZO thin film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES and a good noise equivalent power value NEP.

Dual-Photodiode Differential Receivers Achieving Double Photodetection Area for Gigabit-Per-Second Optical Wireless Communication

This article presents two dual-photodiode (PD) differential optical receivers that achieve double photodetection area to support gigabit-per-second optical wireless communication (OWC), while maintaining the receiver bandwidth. To enable differential light detection with a single incident light beam, a dual-PD OWC receiver architecture is proposed. In this architecture, two PDs are connected to the receiver complementarily without sacrificing the receiver bandwidth, and meanwhile, remain properly reversely biased. In addition, an adaptive dc photocurrent cancellation (ADPC) circuit is employed to prevent the saturation of the receivers under strong and imbalanced incident light. Based on the proposed architecture, two OWC receivers are implemented, including a proposed receiver and a reference one. In the proposed receiver, a low-noise shunt-feedback transimpedance amplifier (SF-TIA) with differential-pair-based current reuse and cross-coupled resistive feedback is proposed to enhance the sensitivity. In contrast, the reference receiver employs positive capacitive feedback to improve the transimpedance amplifier (TIA) performance. Both receivers have been fabricated with a standard 180 nm CMOS process and have been wire-bonded to two PDs. Experimental results indicate that both receivers can detect optical signals with data rates up to 2 Gb/s, and the proposed receiver architecture has significantly improved the bit error rate (BER) at 1.5 Gb/s from worse than 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-6}$</tex-math> </inline-formula> –10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-9}$</tex-math> </inline-formula> (error-free) with constrained optical power density. Moreover, the proposed receiver achieves an input sensitivity of 3.4 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $</tex-math> </inline-formula> A <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathrm{pp}}$</tex-math> </inline-formula> due to the superior performance of the proposed TIA, which outperforms the sensitivity of 10.4 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $</tex-math> </inline-formula> A <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathrm{pp}}$</tex-math> </inline-formula> from the reference receiver. Both sensitivities are measured at 1.5 Gb/s for a BER of 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-9}$</tex-math> </inline-formula> (error-free). The power consumption of the proposed and the reference receiver are 24.3 and 19.1 mW, respectively, excluding the output driver.

СИГНАЛЬНІ ПЕРЕТВОРЮВАЧІ СЕНСОРНИХ ПРИСТРОЇВ ІЗ ФУНКЦІОНАЛЬНИМ ПОЄДНАННЯМ ФОТОВОЛЬТАЇЧНОГО ЖИВЛЕННЯ ТА ОПТИЧНОГО ЗВ’ЯЗКУ

The analysis of the sensor devices operation principles with photovoltaic power and optical communications have been performed. The functioning of such devices is provided by a modulated light flux. An informative signal that forms a sensor device is a QR code. The formation of a QR code is carried out using micropower displays based on e-ink electronic ink technologies, and this QR code is read by a smartphone camera. The main results of photovoltaic sensor devices development based on optical communications are presented, in particular, the analysis and generalization of operation principles, simulations and signal converters prototyping. Examples of a photo-sensor converters studies with transimpedance amplification and gyrator load are analyzed. A layout of signal converters and examples of oscillograms are presented in the course of the considered photosensor devices signal converters experimental studies.

Fully Integrated Electronic-Photonic Ultrasound Receiver Array for Endoscopic Applications in a Zero-Change 45-nm CMOS-SOI Process

This article presents the first fully integrated 2-D array of electronic-photonic ultrasound sensors targeting low-power miniaturized ultrasound probes for endoscopic applications. Fabricated in a zero-change 45-nm CMOS-silicon-on-insulator (SOI) technology, this 5.53 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 3.03 mm electronic-photonic system on chip (EPSoC) utilizes micro-ring resonators (MRRs) as ultrasound sensors instead of the traditional piezoelectric or capacitive micromachined transducers (PMUTs or CMUTs). The photonic nature of the sensor enables remoting of the power-hungry receive electronics outside the probe tip, thus lowering the power dissipation inside the human body. Moreover, it eliminates electrical cabling, replacing the bulky micro-coax cables with thinner optic fibers. This EPSoC also reduces fiber count by 8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> with zero power and area overhead by performing wavelength division multiplexed interrogation of MRR sensors coupled onto the same waveguide in lieu of sub-array beamforming or in-pixel digitization. Leveraging the monolithic integration of photonic devices with CMOS circuitry, a complete receiver (RX) unit is built right next to the sensor MRRs, including a programmable gain transimpedance amplifier (TIA) and background current cancellation digital-to-analog converters ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{\text{DAC}}$</tex-math> </inline-formula> s), which allow for a sensor operating range of 74 dB. A 9-bit SAR ADC performs on-chip A/D conversion making for a self-contained endoscopic ultrasound receiver system. The photonic sensing element demonstrates 7.3 mV/kPa sensitivity while consuming 0.43 mW of power and occupying 0.01 mm of area. The functionality of the fabricated chip has been demonstrated in ultrasonic receiver beamforming experiments.

An Active Inductor Based Transimpedance Amplifier with Two Local Feedbacks as a Fiber Optic Application

An important use of active inductor feedback is reported. It was evident that a frequency dependent impedance of an active inductor is similar to that of an ordinary spiral inductor which is a key advantage in integrated circuit design given the fact that Mosfet-based active inductor circuit occupies less volume on board a chip. In this work, a 42 dBΩ transimpedance (TIA) gain at 1 GHz is obtained with 33 𝑝𝐴⁄√𝐻𝑧 of input referred noise with a very low power consumption of 0.605 mW. The Common-Gate Common-Source input stage with an active inductor feedback is reported in this work for the first-time long side a second stage current mirror with additional local active inductor feedback. The extremely low level of power consumption is considered to be another key advantage for that matter despite the moderate levels of TIA gain, bandwidth and input-referred noise current spectral density with 1V DC supply voltage. The LTspice software was used for simulation.

Breadboard of Microchip and Avalanche Photodiode in Linear and Geiger Mode for LiDAR Applications

This paper reports the implementation of two critical technologies used in LiDARs: 1) A microchip Q-switched laser breadboard and 2) breadboard of an Indium gallium arsenide avalanche photodiode working at 300 K with high reverse polarization voltages. Microchip Q-switched lasers are small solid state back pumped lasers, that can generate high energy short pulses. The implemented breadboard used an Erbium and Ytterbium co doped phosphate glass, a COMALO crystal with 98% (initial transparency) and an output coupler of 98% reflectivity. For the sensor test, a system for the simultaneous operation in vacuum and wide range of temperatures was developed. Avalanche photodiodes are reverse polarized photodiodes with high internal gain, due to their multiple layer composition, capable of building up high values of photocurrent from small optical signals by exploiting the avalanche breakdown effects. The test avalanche photodetector was assembled to be operated in two modes: Linear and Geiger mode, to achieve this behavior, a transimpedance amplifier circuit was implemented. These two technologies are critical for mobile LiDAR applications, due to its low mass and high efficiency. The paper describes the breadboard implementation method and sensor characterization at low temperature and high voltage (beyond breakdown voltage).

Unlocking the Power of Nanopores: Recent Advances in Biosensing Applications and Analog Front-End.

The biomedical field has always fostered innovation and the development of various new technologies. Beginning in the last century, demand for picoampere-level current detection in biomedicine has increased, leading to continuous breakthroughs in biosensor technology. Among emerging biomedical sensing technologies, nanopore sensing has shown great potential. This paper reviews nanopore sensing applications, such as chiral molecules, DNA sequencing, and protein sequencing. However, the ionic current for different molecules differs significantly, and the detection bandwidths vary as well. Therefore, this article focuses on current sensing circuits, and introduces the latest design schemes and circuit structures of different feedback components of transimpedance amplifiers mainly used in nanopore DNA sequencing.

Customized Multichannel Measurement System for Microbial Fuel Cell Characterization.

This work presents the development of an automatic and customized measuring system employing sigma-delta analog-to-digital converters and transimpedance amplifiers for precise measurements of voltage and current signals generated by microbial fuel cells (MFCs). The system can perform multi-step discharge protocols to accurately measure the power output of MFCs, and has been calibrated to ensure high precision and low noise measurements. One of the key features of the proposed measuring system is its ability to conduct long-term measurements with variable time steps. Moreover, it is portable and cost-effective, making it ideal for use in laboratories without sophisticated bench instrumentation. The system is expandable, ranging from 2 to 12 channels by adding dual-channel boards, which allows for testing of multiple MFCs simultaneously. The functionality of the system was tested using a six-channel setup, and the results demonstrated its ability to detect and distinguish current signals from different MFCs with varying output characteristics. The power measurements obtained using the system also allow for the determination of the output resistance of the MFCs being tested. Overall, the developed measuring system is a useful tool for characterizing the performance of MFCs, and can be helpful in the optimization and development of sustainable energy production technologies.

Breadboard of Microchip Laser and Avalanche Photodiode in Geiger and Linear Mode for LiDAR Applications

This paper reports the implementation of two critical technologies used in light detection and ranging for space applications: (1) a microchip Q-switched laser breadboard; (2) a breadboard of an indium gallium arsenide avalanche photodiode working at 292 K with high reverse polarization voltages. Microchip Q-switched lasers are small solid-state back-pumped lasers that can generate high-energy short pulses. The implemented breadboard used an erbium and ytterbium co-doped phosphate glass, a Co:Spinel crystal with 98% initial transparency, and an output coupler with 98% reflectivity. For the sensor test, a system for simultaneous operation in vacuum and a wide range of temperatures was developed. Avalanche photodiodes are reverse-polarized photodiodes with high internal gain due to their multiple layer composition, capable of building up high values of photocurrent from small optical signals by exploiting the avalanche breakdown effects. The test avalanche photodetector was assembled to be operated in two modes: linear and Geiger mode. The produced photocurrent was measured by using: (1) a passive quenching circuit; (2) a transimpedance amplifier circuit. These two technologies are important for mobile light detection and ranging applications due to their low mass and high efficiencies. The paper describes the breadboard’s implementation methods and sensor characterization at low and room temperatures with high bias voltages (beyond breakdown voltage).

Very‐low frequency capacitively coupled AC amplifier with a current feedback operational amplifier

SummaryIn this paper, we propose the idea of using transimpedance amplifiers, in lieu of operational amplifiers (OAs) or transconductance amplifiers (OTAs) to design capacitively coupled AC amplifiers. The idea is demonstrated with a current feedback operational amplifier (CFOA) as an active element, which is actually an architecture consisting of voltage buffers and current copiers (mirrors). This last characteristic is further exploited to make the corner frequency of the AC amplifier tunable by means of bootstrapping low‐valued resistors with the output buffer. It is particularly suited to achieve very‐low corner frequencies as needed in applications such as bio‐ or seismic signals. The idea is demonstrated with simulations and experimental results with a discrete implementation.

Ultra-low-noise transimpedance amplifier in cryogenic STM for studying novel quantum states by measuring shot noise

An ultra-low-noise large-bandwidth transimpedance amplifier (TIA) for cryogenic scanning tunneling microscope (CryoSTM) is proposed. The TIA connected with the tip-sample component in CryoSTM is called as CryoSTM-TIA. Its transimpedance gain is as high as 1 GΩ, and its bandwidth is over 300 kHz, but its equivalent input noise current power spectral density is less than 4 (fA)2/Hz at 100 kHz. The low inherent noise for the CryoSTM-TIA is due to its special design: (1) its pre-amplifier is made of a pair of low-noise cryogenic high electron mobility transistors (HEMTs); (2) the noise generated by one HEMT is eliminated by a large capacitor; (3) the capacitance of the cable connected the gate of the other HEMT to the tip is minimized; (4) thermal noise sources, such as the feedback resistor, are placed in the cryogenic zone. The dc output voltage drift of the CryoSTM-TIA is very low, as 5 μV/°C. The apparatus can be used for measuring the scanning tunneling differential conductance spectra, especially the scanning tunneling shot noise spectra (STSNS) of quantum systems, even if the shot noise is very low. It provides a universal tool to study various novel quantum states by measuring STSNS, such as detecting the Majorana bound states.

Second-Order Transimpedance Amplifiers in Mixer-First Receivers: Design for Optimum Blocker Tolerance

A design-oriented analysis of a transimpedance amplifier (TIA) reveals the optimum compression-free dynamic range for downconverted blockers lying in its 2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> -order transition band. The unique circuit topology is chosen to eliminate low-frequency zeros of the transfer function to TIA output with only one OpAmp. Two approaches lead to TIA designs with or without capacitive positive feedback. Both configurations are analyzed and discussed. Simple and accurate design equations allow the component value to be selected straightforwardly. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\omega_0$</tex-math> </inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$</tex-math> </inline-formula> of the two poles are independently controlled. Analytical expressions for out-of-band (OOB) linearity are derived, explaining different distortion mechanisms from both gate and drain voltages of a FET. The FET gate voltage is shown to affect the distortion even if its swing is much lower than the drain voltage swing. The design fully benefits from 2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> -order filtering, yielding optimum blocker tolerance. Power dissipation is limited by the requirements for noise figure and independent pole control. A mixer-first receiver that operates from 1 to 7 GHz is realized on 65 nm RF-SOI CMOS. It displays <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$+$</tex-math> </inline-formula> 31.1 dBm OOB input-referred third-order intercept point (OOB-IIP3), and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$+$</tex-math> </inline-formula> 11.8 dBm OOB blocker 1-dB compression point (B1dB). The TIA consumes 22 mW. The prototype verifies the TIA design.

Reflective Fiber Temperature Probe Based on Localized Surface Plasmon Resonance towards Low-Cost and Wireless Interrogation.

Reflection fiber temperature sensors functionalized with plasmonic nanocomposite material using intensity-based modulation are demonstrated for the first time. Characteristic temperature optical response of the reflective fiber sensor is experimentally tested using Au-incorporated nanocomposite thin films deposited on the fiber tip, and theoretically validated using a thin-film-optic-based optical waveguide model. By optimizing the Au concentration in a dielectric matrix, Au nanoparticles (NP) exhibit a localized surface plasmon resonance (LSPR) absorption band in a visible wavelength that shows a temperature sensitivity ~0.025%/°C as a result of electron-electron and electron-phonon scattering of Au NP and the surrounding matrix. Detailed optical material properties of the on-fiber sensor film are characterized using scanning electron microscopy (SEM) and focused-ion beam (FIB)-assisted transmission electron microscopy (TEM). Airy's expression of transmission and reflection using complex optical constants of layered media is used to model the reflective optical waveguide. A low-cost wireless interrogator based on a photodiode transimpedance-amplifier (TIA) circuit with a low-pass filter is designed to integrate with the sensor. The converted analog voltage is wirelessly transmitted via 2.4 GHz Serial Peripheral Interface (SPI) protocols. Feasibility is demonstrated for portable, remotely interrogated next-generation fiber optic temperature sensors with future capability for monitoring additional parameters of interest.

A low jitter 50 Gb/s PAM4 optical receiver in 130 nm SiGe BiCMOS

This paper analyzed the causes of phase jitter in four-level pulse amplitude modulation (PAM4) optical receiver (ORX), and a modified architecture was proposed. An optimized shunt-feedback transimpedance amplifier was employed to suppress the random jitter caused by the noise of analog front-end, a three-lane limiting amplifier with inter-stage feedback was introduced to extend the bandwidth, and retimers aligning the edges of thermometer codes with an external clock were also incorporated. The ORX fabricated in 130 nm SiGe BiCMOS technology occupies an area of 1.125 mm2 while dissipating 630 mW. The preliminary measured results demonstrated that the phase jitter of the most significant bit (MSB) was less than 0.08 UI for 25 Gb/s NRZ data. Post-layout simulation results indicate that our ORX can correctly decode 50 Gb/s PAM4 signal under a supply voltage of 3.3 V, and the peak-to-peak jitters for the MSB and the least significant bit (LSB) are only 1.5 ps and 2.9 ps, respectively.

Ultraviolet photodetectors and readout based on a‐IGZO semiconductor technology

AbstractIn this work, real‐time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all‐enhancement a‐IGZO thin‐film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES, and a good noise equivalent power value NEP.

An analog fiber optic link developed for electrical pulse signal transmission

The electromagnetic interference (EMI) around the devices for ionizing radiation experiments is a serious concern. In order to reduce EMI and enhance the signal-to-noise ratio, a new type of analog fiber optic link (FOL) has been developed for fast pulse signal transmission under complicated electromagnetic fields. Electrical signals are converted to optical signals through an electro-optical conversion process using the amplitude modulation mechanism. After long-distance transmission, optical signals can also be restored via photoelectric conversion. Each link has a transmitter unit connected via a fiber optic cable to the receiver unit. The transmitter unit consists of a distributed feedback laser, a driver circuit made of amplifiers, and an automatic temperature control module, while the receiver unit consists of a PIN detector, a transimpedance amplifier, a main amplifier, and a third order active low-pass filter. A prototype of this link has been fabricated and tested. The test results show that the transmission bandwidth of the analog signals is DC ∼ 155 MHz, the transmission delay is a typical 21 ns, the linear dynamic range is greater than 56 dB (692 times larger), the output noise is less than 4.5 mV, and the transmission distance is up to several kilometers, which can meet the requirements of ionizing radiation experiments. The FOL demonstrates great performance in transmission for scientific research with high quality in terms of transmission bandwidth, linearity, security, and stability.